Pressure-induced two-color photoluminescence in MnF(2) at room temperature

A novel two-color photoluminescence (PL) is found in MnF(2) at room temperature under high pressure. Contrary to low-temperature PL, PL at room temperature is unusual in transition-metal concentrated materials like MnF(2), since the deexcitation process at room temperature is fully governed by energy transfer to nonradiative centers. We show that room-temperature PL in MnF(2) originates from two distinct Mn(2+) emissions in the high-pressure cotunnite phase. The electronic structure and the excited-state dynamics are investigated by time-resolved emission and excitation spectroscopy at high pressure.     

Ca_(1-x)Al_2Si_2O_8∶Eu_x表面结构与荧光强度相互关系的研究

采用固相法分别在1 150,1 250,1 350,1 450℃下制备了Ca_(1-x)Al_2Si_2O_8∶Eu_x(x=0,0.01,0.05,0.15)系列微晶材料。通过X射线衍射仪(XRD)、拉曼光谱仪(Raman)、光致发光光谱仪(PL)和X射线荧光光谱仪(XRF)研究了CaAl_2Si_2O_8表面结构与荧光强度之间的相互关系。XRD和Raman结果表明:在制备CaAl_2Si_2O_8材料的过程中,随着温度不断升高,原材料逐渐结晶形成结构较为完整的CaAl_2Si_2O_8相;并且从拉曼光谱可以清晰看出,当Eu掺杂量相同时,随着烧结温度的升高,Si—O非晶相逐渐减少,硅氧四面体逐步形成,其振动峰位置逐渐向低波数移动,但当温度过高时硅氧四面体破坏形成宽化的的非晶峰;Eu的掺杂阻碍了Al取代Si位置的过程,因此在1 620波数处振动峰先增强后减弱。这种材料表面结构的变化与Eu的掺杂密切相关,影响着材料表面Eu原子数量分布。PL和XRF结果表明:相同Eu掺杂量时,温度越高越有利于Eu原子扩散到样品表面,从而使样品的荧光强度更强。因此样品的荧光强度和样品单位表面积Eu原子数量存在正比关系。     

溶剂热法合成橙-绿双波段荧光碳点

荧光碳点具有激发波长依赖的独特性质,有望基于此制备检测溶液pH值的荧光探针。以柠檬酸和尿素为原料、N,N-二甲基甲酰胺为溶剂,采用一步溶剂热法在200℃下保温12 h制备了一种新型的具有橙-绿双波段荧光发射性能的水溶性碳点。采用透射电子显微镜、X射线衍射、拉曼光谱、傅里叶变换红外光谱和X射线光电子能谱等方法对荧光碳点的组成和形貌进行了表征,还通过荧光发射光谱和紫外-可见吸收光谱对其光学性能进行了研究。结果表明,制备的碳点粒径为2.7~4.3 nm,表面带有大量含氧官能团,具有良好的水分散性。在440 nm和540 nm波长光激发下分别呈现绿色(500 nm)和橙色(590 nm)双波段荧光发射。合成的荧光碳点发光性能对pH值具有敏感性:在强碱性溶液中,590 nm的荧光强度比水溶液中提高了6.71倍,同时吸收峰的蓝移使得自然光下其溶液颜色发生了明显改变,具有强碱性指示剂的作用;在pH值为2~6的酸性溶液中,500 nm与590 nm发光峰强度比与pH值之间呈现良好的线性关系,展现了作为pH值比率荧光探针的应用潜力。     

Synthesis of SiC/graphene nanosheet composites by helicon wave plasma

We report an approach to the rapid, one-step, preparation of a variety of wide-bandgap silicon carbide/graphene nanosheet(Si C/GNSs) composites by using a high-density helicon wave plasma(HWP) source. The microstructure and morphology of the Si C/GNSs are characterized by using scanning electron microscopy(SEM), Raman spectroscopy, x-ray diffraction(XRD), x-ray photoelectron spectroscopy(XPS), and fluorescence(PL). The nucleation mechanism and the growth model are discussed. The existence of Si C and graphene structure are confirmed by XRD and Raman spectra.The electron excitation temperature is calculated by the intensity ratio method of optical emission spectroscopy. The main peak in the PL test is observed at 420 nm, with a corresponding bandgap of 2.95 e V that indicates the potential for broad application in blue light emission and ultraviolet light emission, field electron emission, and display devices.     

化学气相沉积法在蓝宝石衬底上可控生长大面积高质量单层二硫化钨

在常压条件下使用CVD法生长单层WS_2,通过改变实验条件实现控制晶粒大小或生长成薄膜的目的。采用光学显微镜、拉曼、光致发光谱等对制备的样品进行表征,得到了结晶质量高、尺寸达120μm的单层WS_2晶粒。同时讨论了几个重要参数如温度、生长时间以及钨源用量等对生长单层WS_2的影响。结果表明:温度对CVD生长WS_2影响最大,高温有助于生长高结晶质量的WS_2。调节生长时间可以控制WS_2晶粒的大小,较长时间能生长出连续的薄膜。过量的S蒸汽会抑制WS_2生长,影响结晶质量。     

CaAl_2Si_2O_8∶Eu,Ce,Tb单基三元掺杂荧光材料的制备及其光谱学特征研究

采用高温固相法制备了CaAl_2Si_2O_8∶Eu,Ce,Tb单基三元掺杂的荧光材料。使用X射线衍射仪(XRD)、拉曼光谱仪(Raman)和荧光分光光度计(PL)等测试手段对该荧光材料进行表征。采用XRD表征了样品的物相组成,测试结果表明稀土离子Eu~(2+)置换Ca~(2+)并没有引起CaAl_2Si_2O_8基质晶格结构的变化。拉曼光谱分析证实了样品中硅氧四面体和铝氧四面体的存在,表明了Eu~(2+)替代Ca~(2+)的数量与晶体形态畸变程度有关,Eu~(2+)进入基质晶格的数量影响着硅(铝)氧四面体的数量。PL测试结果表明样品在325nm光激发下,其发射峰主要表现为426nm(蓝光区)的强宽带发射峰和541nm(绿光区)的弱发射峰,其中426nm处的宽带发射峰可通过高斯拟合成三个位于393,419和474nm的拟合峰;对比分析荧光性能以及同等合成条件下样品荧光强度的不同,确定了该荧光材料在三掺Eu∶Ce∶Tb的摩尔比为1∶1∶1.5时所发射荧光最强。CIE色度图坐标显示三种掺杂比例下制备的荧光材料均发射蓝色荧光,光显色性好,色温低,是一种适合作为紫外-近紫外激发的LED用蓝色荧光材料。     

秧苗状Zn2SnO4纳米线的制备及光致发光性能研究

本文通过化学气相沉积方法成功制备了秧苗状Zn2SnO4纳米线,X射线衍射表明,样品为面心立方结构的Zn2SnO4,同时含有少量的ZnO物相,并且可以通过延长沉积时间的方法获得较为纯净的Zn2SnO4材料.SEM结果显示样品形貌为秧苗状的纳米线.通过样品的光致发光谱的研究发现,Zn2SnO4 的紫外发光强度随着ZnO杂相...     

循环氧化/退火制备GeOI薄膜材料及其性质研究

采用超高真空化学气相淀积系统在SOI(绝缘体上硅)衬底上生长了Si_0.82Ge_0.18外延层,通过循环氧化/退火工艺,制备出Ge组分从0.24到1的绝缘体上锗硅(SGOI)材料.采用高分辨透射电镜、拉曼散射光谱和光致发光谱表征了其结构及光学性质,对氧化过程中SiGe层中的Ge组分和应变的演变进行了分析.最后制备出11 nm厚的绝缘体上Ge材料(GeOI),具有完整的晶格结构和平整的界面.室温下观测到绝缘体上Ge直接带跃迁光致发光,发光峰值位于1540 nm,发光 关键词： GeOI 氧化 退火 光致发光谱     

Emission mechanisms in stabilized iron-passivated porous silicon: Temperature and laser power dependences

Photoluminescence (PL) measurements of porous silicon (PS) and iron-porous silicon nanocomposites (PS/Fe) with stable optical properties versus temperature and laser power density have been investigated. The presence of iron in PS matrix is confirmed by Raman spectroscopy. The PL intensity of PS and PS/Fe increases at low temperature, the evolution of integrated PL intensity follows the modified Arrhenius model. The incorporation of iron in PS matrix reduces the activation energy traducing the existence of shallow levels related to iron atoms. Also, the temperature dependence of the porous silicon PL peak position follows a linear evolution at high temperature and a quadratic one at low temperature. Such evolution is due to the thermal carriers' redistribution and an energy transfer. Similarly, we have compared the laser power dependence of the PL in PS and PS/Fe layers. The results prove that the recombination process in PS is realised through the lower energy traps localised in the electronic gap. However, the observed emission in PS/Fe is essentially due to direct transitions. So, we can conclude that the presence of iron in PS matrix induces a strong modification of the PL mechanisms.     

InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

In this article, comprehensive combination of photomodulated optical spectroscopy (PR) and temperature-dependent photoluminescence (PL) is carried out to investigate the electronic energy levels and carrier dynamics in nanometers’ size InAs quantum dots (QDs) in different surrounding material. Depending on the temperature range, the integrated PL intensity as a function of temperature, correlated to a rate equation model reveals two thermal escape channels for the InAs QDs in a pure GaAs matrix and three thermal escape channels for InAs/InGaAs dots-in-a-well structure. The extraction of the electronic energy levels by room temperature PR allow analyzing the impact of the surrounding material composition on the thermal activation energies and resulting PL quenching process.     

Effect of the Order and Disorder of BaMoO4 Powders in Photoluminescent Properties

The study of the photoluminescent properties affected by order and disorder of the BaMoO₄ powders is the principal objective in this work. BaMoO₄ compounds were prepared using soft chemical process called Complex Polymerization Method. In this work, different deagglomeration types and different heating rates were used to promote different disorder degrees. Scheelite type phase (BaMoO₄) was determined by X-ray Diffraction (XRD), Fourier Transformed Infra-Red (FTIR) and Raman spectroscopy after heat treating the sample at 400°C. The room temperature luminescence spectra revealed an intense single-emission band in the visible region. Based on XRD and Raman data it was observed that the transition between the completely disordered structure to completely ordered structure is a good condition for photoluminescence (PL) emission. The best PL emission is obtained when the material possesses short range disorder, i.e., is periodically ordered (XRD), but some disorder as measured by Raman spectroscopy. The excellent optical properties observed for disordered BaMoO₄ suggested that this material is a highly promising candidate for optical applications.     

不同晶向SrTiO3上外延GaAs薄膜的光谱研究

利用MBE生长技术,成功地在不同晶向SrTiO3(100)(111)(110)衬底上生长了GaAs薄膜,利用显微Raman和荧光光谱（PL）对此进行了研究。实验结果表明,在不同晶向SrTiO3上生长的GaAs薄膜有不同的晶向和应力状态。荧光光谱（PL）研究表明在SrTiO3(100)(111)晶面上生长的GaAs薄膜的PL峰发生明显的蓝移。研究表明在SrTiO3(110)面上生长的GaAs薄膜和体单晶基本上一致,有更好的光学质量。     

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd₂O₂S:Tb^3?+? thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd₂O₂S:Tb^3?+? emission. The main emission peak due to the ⁵D₄–⁷F₅ transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd₂O₃ layer, with small amounts of Gd₂S₃, on the surface.     

Structural evolution and bandgap modulation of layered β-GeSe2 single crystal under high pressure

Germanium diselenide (GeSe₂) is a promising candidate for electronic devices because of its unique crystal structure and optoelectronic properties. However, the evolution of lattice and electronic structure of $β$-GeSe₂ at high pressure is still uncertain. Here we prepared high-quality $β$-GeSe₂ single crystals by chemical vapor transfer (CVT) technique and performed systematic experimental studies on the evolution of lattice structure and bandgap of $β$-GeSe₂ under pressure. High-precision high-pressure ultra low frequency (ULF) Raman scattering and synchrotron angle-dispersive x-ray diffraction (ADXRD) measurements support that no structural phase transition exists under high pressure up to 13.80 GPa, but the structure of $β$-GeSe₂ turns into a disordered state near 6.91 GPa and gradually becomes amorphous forming an irreversibly amorphous crystal at 13.80 GPa. Two Raman modes keep softening abnormally upon pressure. The bandgap of $β$-GeSe₂ reduced linearly from 2.59 eV to 1.65 eV under pressure with a detectable narrowing of 36.5%, and the sample under pressure performs the piezochromism phenomenon. The bandgap after decompression is smaller than that in the atmospheric pressure environment, which is caused by incomplete recrystallization. These results enrich the insight into the structural and optical properties of $β$-GeSe₂ and demonstrate the potential of pressure in modulating the material properties of two-dimensional (2D) Ge-based binary material.     

Synthesis and characterization of GaP nanochains with a twin-modulated quasi-periodic structure

GaP nanochains have been synthesized by hydrogen-assisted thermal evaporation, and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy. GaP nanochains possess a (111) twin crystal plane-modulated quasi-periodic structure, that gives a strong green photoluminescence at 618 nm. While the Raman spectrum of the nanochains is similar to that of the GaP crystal, the intensity of the longitudinal optical (LO) peak is stronger than that of the transverse optical (TO) peak, which is supposedly related to the nanochain microstructures.     

共振拉曼光谱技术应用综述

拉曼光谱是提供物质结信息的强有力工具。但由于拉曼散射信号弱,灵敏度低,因此应用范围受到限制。而在共振拉曼光谱(RRS)中,由于激发光源频率落在分子的某一电子吸收带内,分子吸收光子向电子激发态的跃迁变成了共振吸收,因此对入射光的吸收强度大大增加。与常规拉曼光谱相比,RRS能够提高信号强度的106倍。因此,RRS检测技术以其更高的灵敏度和选择性而具有更广的应用,特别是在生物学及医学等领域。如：(1)生物基质中的类胡萝卜素和叶绿素等色素分析;(2)细胞、蛋白质和DNA等有机物研究以及一些临床疾病诊断。RRS可以得到在常规拉曼光谱中隐藏的、更为重要的分子结构信息。RRS总是在很低的浓度下测试,且共振拉曼增强的谱线是属于产生电子吸收的基团,这对于有色物和生物样品尤为重要。因为很多这类样品的活性部位接近于生色基团,且研究对象往往是生物大分子的某一部分,所以在研究生物物质的结构和功能的关系时,RRS起着重要作用。近年来,由于光谱技术的发展使得RRS检测技术得到创新与延伸,如液芯光纤共振拉曼光谱和透射共振拉曼光谱等新技术的应用。通过对近几年有关RRS技术应用的原始论文、数据和主要观点进行归纳整理与分析提炼,介绍了RRS这一专题的历史背景和研究现状,分别对共振拉曼光谱的色素检测、生物检测和爆炸物检测等应用领域展开详细的综述,并介绍了相关新技术的发展应用。随着光谱技术的快速发展,RRS必将在科研领域拥有其他光谱技术不可取代的重要地位。     

Recent advances in carbon nanotube photophysics

A review is given of how resonance Raman spectroscopy (RRS) and photoluminescence (PL) can be used to reveal unique information about nanostructures, 1 nm in diameter, thus providing new techniques for probing the electronic and vibrational properties of nanostructures. Special attention is given to recent advances made in this field.     

Photoluminescence characterization of few-nanocrystals electronic devices

Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based non-volatile memory devices. The 2D array of Si-NCs forming the floating gate is obtained by low-energy ion implantation in thin oxide followed by annealing. The electrical properties and PL emission are dramatically improved after annealing in oxidizing conditions, which are necessary conditions for oxide healing. Both these elaboration and characterization techniques are currently extended to the production and the study of nanoscale electronic devices, which exploit the Coulomb blockade effect and other quantized charging features at 300 K. The fabrication of such devices requires the fine control of a small number of NCs of about 3 nm in diameter. This could be achieved by 1 keV Si-implantation through stencil masks with window sizes ranging from about 0.1 to 10 μm², with spacing between apertures in the 1-10 μm range. After mask removal and annealing, PL spectroscopic imaging under a confocal microscope is used to detect the NCs rich areas. The image of the PL intensity is found to mimic the mask geometry. Some changes of the PL energy at maximum intensity are found, that could be attributed to different Si-NCs sizes.     

Raman spectroscopy characterization of two-dimensional materials

Two-dimensional(2D) materials have become a hot study topic in recent years due to their outstanding electronic,optical, and thermal properties. The unique band structures of strong in-plane chemical bonds and weak out-of-plane van der Waals(vdW) interactions make 2D materials promising for nanodevices and various other applications. Raman spectroscopy is a powerful and non-destructive characterization tool to study the properties of 2D materials. In this work, we review the research on the characterization of 2D materials with Raman spectroscopy. In addition, we discuss the application of the Raman spectroscopy technique to semiconductors, superconductivity, photoelectricity, and thermoelectricity.     

Structural and electrical transport properties of charge density wave material LaAgSb_2 under high pressure

Layered lanthanum silver antimonide LaAgSb_2 exhibits both charge density wave(CDW) order and Dirac-cone-like band structure at ambient pressure.Here,we systematically investigate the pressure evolution of structural and electronic properties of LaAgSb_2 single crystal.We show that the CDW order is destabilized under compression,as evidenced by the gradual suppression of magnetoresistance.At P_C～22 GPa,synchrotron x-ray diffraction and Raman scattering measurements reveal a structural modification at room-temperature.Meanwhile,the sign change of the Hall coefficient is observed at 5 K.Our results demonstrate the tunability of CDW order in the pressurized LaAgSb_2 single crystal,which can be helpful for its potential applications in the next-generation devices.