用于等离子体诊断的磁探针矩形分布线圈注释

将傅里叶级数分析用于等离子体诊断的磁探针矩形分布线圈,表明关于它能代替正弦、余弦线圈的论述是无疑的。     

对称双弹簧振子受迫、有阻尼横振动的混沌行为

对受周期外力驱动的对称双弹簧振子进行了研究,建立了系统的动力学方程,用线性稳定性分析方法讨论了平衡点附近邻域的稳定性,利用数值计算并结合多种分析方法,求解非线性方程和判断解的性质.通过改变系统参数,画出时域图、相图及分岔图等.计算分析和数值实验发现,这个简单的力学系统存在十分丰富的动力学行为(分岔、混沌).理论分析和数值实验结果一致.     

磁控溅射法沉积SiN_x非晶薄膜的生长机制及结构分析

利用磁控溅射技术在单晶Si衬底上沉积了Six非晶薄膜.样品的傅里叶变换红外吸收光谱(FTIR)显示,SNx非晶薄膜在812～892 cm-1范围内存在一个较强的吸收谱带.该吸收谱带对应于Si-N-Si键的伸缩振动吸收(stretching vibration mode),其吸收峰峰位随着溅射功率的增大明显红移;但退火后,该吸收峰又逐渐蓝移.结合中心力模型和自由结合模型,分析了磁控溅射过程中Six非晶薄膜的生长机制和内部结构.研究认为,随着溅射功率的提高,薄膜中先后形成Si-N4四面体,Si-N-Si3,Si-N2-S2及Si-N3-Si等结构,这几种结构分别对应着Si-N-Si键的不同模式的振动吸收.随着退火温度的升高,分子热运动逐渐加剧,非晶SiNx薄膜发生相分离,生成Si3N4和Si纳米晶颗粒,因此,S-N-Si键的吸收峰逐渐向Si3N4的特征振动吸收峰位870 cm-1靠近.     

结合傅里叶变换合成法设计均匀薄膜

基于傅里叶变换合成法的基本原理,合成了一个K9基底上的负滤光片,合成的渐变折射率薄膜具有期望光学特性,但实际制备难度很大,因此将其细分为足够多层离散折射率的均匀薄膜,由于实际薄膜材料种类有限,不能获得任意折射率膜层,鉴于两层高低折射率薄层可近似为一层中间折射率膜层的思想,将膜系转化成一个可实际制备的膜系结构:膜系采用ZrO2和SiO2两种膜料,膜层总数为183层,经单纯形调法优化后,膜层总厚度为7.09 μm,通带和截止带内平均透射比分别为97.56%和3.13%,其结果优于直接采用傅里叶方法合成的非均匀膜系,与期望透射比曲线吻合更好.说明通过这种思想设计任意光谱特性的膜系是可行的,也使傅里叶变换合成法设计的薄膜实际制备成为可能.     

硬脂酸钠薄膜的制备及应用

 利用真空热蒸发的方法制备了厚度为0.28~0.40 μm的硬脂酸钠薄膜,并用光学显微镜和傅里叶红外光谱仪对硬脂酸钠薄膜进行了观察和分析,发现硬脂酸钠薄膜的红外光谱和固体的光谱具有相似性。在空气环境中硬脂酸钠薄膜不易潮解,在选择的无水脱膜溶液中,容易脱出无明显针孔的自支撑Al膜。用俄歇电子能谱测试,未发现脱出的Al膜上有残留的硬脂酸钠脱膜剂。     

硬脂酸钠薄膜的制备及应用

利用真空热蒸发的方法制备了厚度为0.28~0.40 μm的硬脂酸钠薄膜,并用光学显微镜和傅里叶红外光谱仪对硬脂酸钠薄膜进行了观察和分析,发现硬脂酸钠薄膜的红外光谱和固体的光谱具有相似性。在空气环境中硬脂酸钠薄膜不易潮解,在选择的无水脱膜溶液中,容易脱出无明显针孔的自支撑Al膜。用俄歇电子能谱测试,未发现脱出的Al膜上有残留的硬脂酸钠脱膜剂。     

微晶硅薄膜的制备及结构和稳定性研究

采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明：随衬底温度的升高，材料 中的氢含量总的趋势下降；傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加（在10¹⁹cm^-3量级）；与高衬底温度相 比，低衬底温度制备的材料易于后氧化，这说明低温制备材料的稳定性不好. 关键词： 甚高频等离子体增强化学气相沉积 微晶硅薄膜 傅里叶变换红外吸收     

氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

采用螺旋波等离子体化学气相沉积技术以N₂/SiH₄/H₂为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N₂流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N₂流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N₂流量增加,PL的谱线展宽并逐渐增强. 关键词： 傅里叶红外透射谱 光吸收谱 纳米硅粒子镶嵌薄膜 光致发光     

FTIR法研究BCN薄膜的内应力

采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N₂)为工作气体,在Si(100)衬底上制备出硼碳氮(BCN)薄膜。利用傅里叶变换红外光谱(FTIR)考察了不同沉积参数(溅射功率为80～130 W、衬底温度为300～500 ℃、沉积时间为1～4 h)条件下制备的薄膜样品。实验结果表明,所制备薄膜均实现了原子级化合。并且沉积参数对BCN薄膜的生长和内应力有很大影响,适当改变沉积参数能有效释放BCN薄膜的内应力。在固定其他条件只改变一个沉积参数的情况下,得到制备具有较小内应力的硼碳氮薄膜的最佳沉积条件：溅射功率为80 W、衬底温度为400 ℃、沉积时间为2 h。     

基于白光干涉测量色散补偿薄膜的群延迟色散

为精确测量超快激光色散补偿薄膜的群延迟色散,提出了一种基于窗口傅里叶变换和样条插值去噪算法的新型白光干涉测量方案。计算机模拟表明此方法测试精度可达0.58fs2。分析了高斯噪声和光强平均效应对测试精度的影响,并使用此方法对实验制备的Gires-Tournois干涉反射镜和啁啾镜进行了测试,在宽光谱范围内测试误差小于10fs2。该方法相比其他算法可以更快速、更精确地实现薄膜相位信息的提取,具有更高的测试精度和实用性。     

Ferrimagnetism in two antiferromagnetic transverse Ising thin films

The phase diagrams and temperature dependences of total magnetization m_T in two antiferromagnetic transverse Ising thin films with same thickness L (L = 4), consisting of two (A and B) layers, are studied by the uses of the effective-field theory with correlations and the mean-field theory. The A and B layers are consisted of spin-1/2 atoms and they have opposite spin directions. Two magnetic structures are discussed and they exhibit rather different and characteristic behaviors for the magnetic properties. Many characteristic behaviors observed in standard ferrimagnetic materials as well as novel phenomena have been obtained for the thermal variations of m_T in the both systems, when the crystallographically equivalent conditions between the A and B layers are broken.     

Optically induced transverse voltages in thin metal films

Results of experiments on laser induced voltages in metal films are summarized. The voltages are found to occur along certain directions in the plane of slant-angle vapour deposited films. A thermo-electric model based on periodic variations in the microscopic film structure, is described. The magnitude of the effect is proportional to the absorbed power/length between the contact points. Application of the films in the wavelength range 0.33–10.6μm is described and compared to more conventional detectors. A recent application, using the effect as a tool to profile non-uniformities in thin films, is also discussed.     

Experimental measurements on transverse vibration characteristics of piezoceramic rectangular plates by optical methods

This study provides two non-contact optical techniques to investigate the transverse vibration characteristics of piezoceramic rectangular plates in resonance. These methods, including the amplitude-fluctuation electronic speckle pattern interferometry (AF-ESPI) and laser Doppler vibrometer (LDV), are full-field measurement for AF-ESPI and point-wise displacement measurement for LDV, respectively. The edges of these piezoceramic rectangular plates may either be fixed or free. Both resonant frequencies and mode shapes of vibrating piezoceramic plates can be obtained simultaneously by AF-ESPI. Excellent quality of the interferometric fringe patterns for the mode shapes is obtained. In the LDV system, a built-in dynamic signal analyzer (DSA) composed of DSA software and a plug-in waveform generator board can provide the piezoceramic plates with the swept-sine excitation signal, whose gain at corresponding frequencies is analyzed by the DSA software. The peaks appeared in the frequency response curve are resonant frequencies. In addition to these optical methods, the numerical computation based on the finite element analysis is used to verify the experimental results. Good agreements of the mode shapes and resonant frequencies are obtained for experimental and numerical results.     

Ferrimagnetic magnetizations of transverse Ising thin films with diluted surfaces

The temperature dependences of longitudinal and transverse magnetizations in transverse Ising thin films with diluted surfaces which are coupled antiferromagnetically to the bulk are studied by the use of the effective-field theory (EFT) with correlations. Novel features are obtained for the thermal variations of longitudinal magnetization, being different from those of the bulk ferrimagnetic materials, such as the possibility of two compensation points. They are depending on the thickness of a film and the surface dilution. These characteristic phenomena come from the competition between the surfaces and the bulk when the ratios of the physical parameters (transverse field and exchange interaction) between the surfaces and the bulk are selected as some large values.     

Solution processed amorphous InGaZnO semiconductor thin films and transistors

Amorphous indium gallium zinc oxide (a-IGZO) semiconductor thin films and transistors were deposited on alkali-free glasses by the sol–gel route. The atomic ratio of In:Ga:Zn in the solution was 0.7:0.3:1. In this study, the effects of annealing temperature on the structural, surface condition, optical transmittance, and electrical resistivity of a-IGZO semiconductor thin films were investigated. GIXRD measurements and TEM-NBD analysis indicated that all annealed IGZO thin films had an amorphous phase structure. The dried IGZO sol–gel films annealed at a temperature higher than 425 °C had a flat surface and exhibited high transparency (>89%) in the visible region. According to results from TGA, FT-IR and XPS, the residual organic compounds in the dried IGZO sol–gel films were completely removed at the annealing temperatures higher than 450 °C. Therefore, we chose the 450 °C annealed thin film as the active channel layer in the bottom-gate, bottom-contact (BGBC) thin-film transistor (TFT) in the present study. Current–voltage (I–V) characteristics of the 450 °C annealed a-IGZO TFT revealed that it operated in n-type behavior with a positive threshold voltage (enhancement mode).     

Sizes of X-ray radiation coherent domains in thin SmS films and their visualization

Technical Physics - The size of X-ray radiation coherent domains (250 ± 20 Å) is determined in a thin polycrystalline SmS film using X-ray diffraction patterns (θ–2θ...     

Characteristic phenomena in nanoscaled transverse Ising thin films with diluted surfaces

The phase diagrams and magnetizations of two nanoscaled thin films with a negative interlayer interaction and dilution at the surfaces, described by the transverse Ising model, are investigated by the use of the effective field theory with correlations. A lot of characteristic phenomena which heavily depend on the surface parameters can be found in them. In particular, the behaviors of a compensation point (or points) in these nanosystems with a negative interlayer interaction at the surfaces are examined by changing the transverse field and the physical parameters at the surfaces.