Sodium decorated net-Y nanosheet for hydrogen storage and adsorption mechanism: A first-principles study

Using first-principles calculations based on density functional theory(DFT), we investigate the potential hydrogen storage capacity of the Na-decorated net-Y single layer nanosheet. For double-side Na decoration, the average binding energy is 1.54 eV, which is much larger than the cohesive energy of 1.13 eV for bulk Na. A maximum of four H_2 molecules can be adsorbed around each Na with average adsorption energies of 0.25–0.32 eV/H_2. Also, H_2 storage gravimetric of 8.85 wt% is obtained, and this meets the U.S. Department of Energy(DOE) ultimate target. These results are instrumental in seeking a promising hydrogen energy carrier.     

Vacancy trapping and helium decoration in Sb ion-implanted tungsten studied by Mössbauer spectroscopy

Mössbauer effect measurements have been performed using sources of¹¹⁹Sb implanted in W without and with post-implanted helium. Each of the sources was subjected to an isochronal annealing sequence in order to study vacancy trapping, helium decoration and recovery of damage. Four sites have been identified for Sb implanted in tungsten; one of these corresponds with substitutional Sb atoms, two others are assigned to Sb atoms associated with vacancies, while the last one can be either vacancy or impurity associated. The development of site occupation as a function of annealing temperature is in accordance with the one-interstitial model. Injection of 2·10¹⁶ He/cm² leads to nucleation of helium bubbles. Helium atoms that are released from these bubbles at about 1300 K are retrapped by Sb atoms to form new bubbles.     

单个钛原子储氢能力和储氢机制的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了单个过渡金属钛原子吸附氢分子的物理机制. 研究表明,单个钛原子最多能吸附8对氢分子,吸附结构为对称的两个类金字塔型结构, 其平均吸附能为- 0.28 eV.通过计算轨道能级和差分电荷密度分布,分析决定吸附结构、 吸附能大小以及吸附氢分子数目的内在物理机制.研究表明,钛原子的4s电子转移到3d轨道上, 从而产生较强的极化电场,导致氢分子极化,钛原子通过静电极化作用吸附氢分子. 本文的研究将对设计高密度储氢材料有一定的指导作用.     

Vacancy effect on the doping of silicon nanowires:A first-principles study

The influence of vacancy defect on the doping of silicon nanowires is systematically studied by the first-principles calculations. The atomic structures and electronic properties of vacancies and vacancy–boron(vacancy–phosphor) complexes in H-passivated silicon nanowire with a diameter of 2.3 nm are explored. The results of geometry optimization indicate that a central vacancy can exist stably, while the vacancy at the edge of the nanowire undergoes a local surface reconstruction, which results in the extradition of the vacancy out of the nanowire. Total-energy calculations indicate that the central vacancy tends to form a vacancy–dopant defect pair. Further analysis shows that n-type doping efficiency is strongly inhibited by the unintentional vacancy defect. In contrast, the vacancy defect has little effect on p-type doping.Our results suggest that the vacancy defect should be avoided during the growth and the fabrication of devices.     

带有碳杂质的钨中氢稳定性的第一性原理研究

应用第一性原理计算方法研究了碳(C)原子对钨(W)中氢(H)原子稳定性的影响. 本征W中, 当C-H间距离为～2.5 Å时, H的溶解能出现最低值, 此时为H最稳定的位置. W中存在空位时, 由于C的影响, H占据的最佳电子密度面值为0.10 Å^-3. 研究发现, W中单空位最多能容纳10个H原子, 且不能形成H分子, 不同于没有C存在的情况, 表明C对W中H稳定性存在很大影响. 此外, 当两个C原子存在于空位中时, H占据的最佳电子密度面值变为0.13 Å^-3.     

Vacancy defect influences on optoelectronic properties for In0.875Ga0.125As0.25P0.75: a first-principles study

Optical Review - InGaAsP photocathodes show great potential for near-infrared applications, particularly at 1.06 μm. However, vacancy defects are unavoidable in InGaAsP crystals...     

Interaction between nanobuds and hydrogen molecules: A first-principles study

Hydrogen storage materials are crucial for the wide application of hydrogen in fuel cells. In this Letter, the interaction between hydrogen molecules and nanobuds has been studied using the Dmol3 package. The results show that the adsorption energies of hydrogen molecules onto nanobuds range from 0.069 eV to 0.115 eV, and that the adsorption energies are not sensitive to the nanobuds' structures but closely related to the number of carbon atoms around H₂ molecules. The energy barrier of a hydrogen molecule entering C176 is 2.38 eV. Each C176 nanobud can accommodate four H₂ molecules. The stress existing in nanobuds induces alterative charge distribution, which can improve the hydrogen storage performance of nanobuds to a certain extent.     

Li-N-H储氢体系热力学性质的第一性原理研究

基于密度泛函理论的第一性原理方法, 系统地研究了Li-N-H储氢过程中各个化合物的晶胞参数、生成焓和化学反应焓. 结果发现优化后的晶格参数与先前的理论和实验研究符合得很好. 通过计算Li₃N, LiH, LiNH₂和Li₂NH在298 K的生成焓分别为-168.7, -81.0, -173.0和-190.8 kJ/mol, 进而计算得到整个储氢反应过程在T=298 K时反应焓为78.5 kJ/mol H₂, 这和他人计算得到T=300 K的结果75.67 kJ/mol H₂非常接近. 最后, 给出了储氢两步反应过程分别在T=298 K时的反应焓, 这些结果都与实验和他人理论计算得到的数据符合较好. 关键词： 第一性原理 热力学性质 Li-N-H 体系 反应焓     

Role of helium in the sliding and mechanical properties of a vanadium grain boundary:A first-principles study

The effects of helium （He） on the sliding and mechanical properties of a vanadium （V） E5（310）/[001] grain boundary （GB） have been investigated using a first-principles method. It has been found that He was energetically favorable sitting at the GB region with a segregation energy of -0.27 eV, which was attributed to the special atomic configurations and charge density distributions of the GB. The maximal sliding energy barrier of the He-doped GB was calculated to be 1.73 J/m^2, 35% larger than that of the clean GB. This suggested that the presence of He would hinder the V GB mobility. Based on the thermodynamic criterion, the total energy calculations indicated that the embrittlement of V GB would be enhanced by He segregation.     

Effects of Cr on H and He trapping and vacancy complexes in V in a fusion environment: a first-principles study

First-principles density functional theory was used to investigate the interaction between hydrogen (H) and helium (He) in V–Cr alloy, which is a potential structural material for use in fusion reactors. When vacancies are present in the V–Cr alloy, a single He atom prefers to occupy the octahedral site near the Cr atom rather than vacancy centre, which differs from the cases of iron and tungsten. Because of the decrease of the electron density around the He atom, there was a strong interaction between He and H. In the vicinity of He-vac complexes, H atoms tend to stay in the tetrahedral site rather than occupy the octahedral-interstitial site. A single He-vac complex can trap as many as six H atoms, which is more than can be trapped by an empty vacancy in the V–Cr alloy because of the electronic density redistribution of vacancy vicinity. This strong attraction explains the enhanced retention of H and He observed near the surface of V and V-based alloys under both sequential and simultaneous bombardments. The results provide useful insight into the application of the V-based alloys as candidate structural materials in fusion Tokamaks.     

镧铱硅电子结构与成键机理的第一性原理研究

利用基于密度泛函理论的第一性原理方法,系统研究了镧铱硅（La-Ir-Si）体系四种异构体的电子结构与成键机理．通过对能带结构、态密度的系统分析,发现：La-Ir-Si体系的超导属性与该体系中过渡元素Ir-d态和Si-p态的p-d轨道耦合强度有关．为了定量描述p-d轨道耦合的强度,采用了分子中的原子方法,针对La-Ir-Si体系成键过程中的电荷迁移进行了定量的分析,结果表明,超导的转变温度与体系中Ir原子basin中的电荷量成近线性关系． 关键词： La-Ir-Si 电子结构 超导属性 第一原理     

A first-principles study on the structural, lattice dynamical and thermodynamic properties of beryllium chalcogenides

First-principles calculations, which are based on the plane-wave pseudopotential approach to the density functional theory and the density functional perturbation theory within the local density approximation, have been performed to investigate the structural, lattice dynamical and thermodynamic properties of zinc blende (B3) structure beryllium chalcogenides: BeS, BeSe and BeTe. The results of ground-state parameters and phonon dispersion are compared and contrasted with the experimental and theoretical data of previous literature. The phonon frequencies at the zone-center are analyzed. We also used the phonon density of states and quasiharmonic approximation to calculate and predict some thermodynamic properties such as entropy, heat capacity, internal energy and free energy of the B3 phase beryllium chalcogenides.     

铝阳极氧化过程中氢对氧迁移影响的理论研究

为了研究铝阳极氧化过程中离子在阳极反应中的行为,利用第一性原理研究了氢原子对氧原子在铝(111)表面的吸附迁移行为的影响及氧原子向铝晶体内部的渗透行为的影响.结果表明,由于“抽象”(abstract)效应,氢原子的存在大大降低了氧进入铝晶体的能垒.氢原子的引入也影响了氧原子在铝晶体中的扩散,这可以显著降低氧原子在四面体间隙位置之间迁移的活化能(从1.23eV到0.35eV).这些结论助于我们了解阳极氧化过程和离子迁移过程.     

Amorphous silicon hexaboride: a first-principles study

We report for the first time the atomic structure, electronic structure and mechanical properties of amorphous silicon hexaboride (a-SiB₆) based on first-principles molecular dynamics simulation. The a-SiB₆ model is generated from the melt and predominantly consists of pentagonal pyramid-like configurations and B₁₂ icosahedral molecules, similar to what has been observed in most boron-rich materials. The mean coordination number of B and Si atoms are 5.47 and 4.55, respectively. The model shows a semiconducting behaviour with a theoretical bandgap energy of 0.3?eV. The conduction tail states are found to be highly localised and hence the n-type doping is suggested to be more difficult than the p-type doping for a-SiB₆. The bulk modulus and Vickers hardness of a-SiB₆ are estimated to be about 118 and 13–17?GPa, respectively.     

Observation of hydrogen and helium satellites in a turbulent plasma

Time-resolved measurements of satellites about the (1s2s?1s3d) forbidden transition in helium, satellites both of the H_δ line of hydrogen and of its splittings and, finally, satellites of He II 4868 Å have been observed. The behavior of these satellites is correlated relative to each other and to previously reported satellites both on H_β and near the 6632 Å (1s2p?1s3p) forbidden transition in helium. The appearance of the satellites is attributed to a strong field interaction between orthogonal components of the dynamic and quasistatic electric fields generated in a plasma by an instability.     

Vacancy trapping by 5sp series impurities in rolled and implanted nickel foils

Nickel foils containing substitutional¹¹⁹Sb,¹²¹Sb and¹²⁵Sb impurities were deformed by rolling at room temperature and subsequently subjected to an isochronal annealing treatment. After each annealing step, a Mössbauer spectrum was measured. In the annealing temperature range from 350 to 800 K, in addition to the component for substitutional impurities, components ascribed to impurity atoms associated with one or more vacancies were observed in all cases. After annealing at 850 K and higher, only the substitutional component remains. Though very similar in general, some of the spectra for deformed¹¹⁹SbNi samples show clear differences from those obtained for implanted¹¹⁹SnNi samples. Additional experiments were performed on implanted sources of¹²¹Te and¹²⁹Te in nickel. Here, substantial vacancy trapping is already present in undeformed and unannealed foils. Rolling of the¹²⁹TeNi sources leads to a considerable increase of trapping after subsequent annealing at intermediate temperatures. For the insoluble Te impurities, a purely substitutional solution can not be recovered by annealing at higher temperatures. The evolution of vacancy trapping at the impurities that serve as probes and the dependence of the hyperfine field and the isomer shift of the impurities on the trapped vacancy configurations are discussed.