Effective Hubbard model for Zn-doped CuO2 plane

In the framework of the cell-perturbation method for the original p-d model an effective two-band Hubbard model for the CuO₂ plane with Zn impurities is derived. Zn impurities are modelled by Wannir oxygen one-hole states at vacant Cu sites. The model is based on the results of band structure calculations carried out within the local-density approximation. Further reduction to an extended t-J model shows a large ferromagnetic superexchange interaction between the Cu spin with the nearest virtual oxygen spin in the Zn cell. Received 17 November 1998     

Low-Spin Ferriheme Models of the Cytochromes: Correlation of Molecular Structure with EPR and Mössbauer Spectral Parameters

The electronic properties of the intermetallic compound HfCo₃B₂ were investigated using combined TDPAC measurements and first principles LAPW calculations. The V _zz value at the hafnium site is determined from dominant positive p–p contribution, with less than 20%, negative s–d and d–d contributions. Based on the calculated density of state (DOS) at 0 K, a band contribution (γ _band) of 7.26 (mJ/mol/K²) to the value of the electronic specific heat coefficient (γ) was obtained. This relatively low γ _band value is attributed to the hybridization between hafnium d-states, boron 2p-states and cobalt 3d-states, formed at the energy interval below E _Fermi. This hybridization, together with the dip in the DOS around E _Fermi, implies a possible reduction of the low temperature magnetic moment in this compound.     

The study of the energy band structures of TiC,VC, Ti4C3 and V4C3 by the LMTO-ASA method

The energy band structures of TiC, VC, Ti₄C₃ and V₄C₃ have been studied by the linear muffin-tin-orbital method (LMTO). The influence of vacancies on the density of states (DOS) in the 2s C-band is a uniform reduction and a narrowing of this DOS. The splitting of the peak in the low-energy part of the 2p C, 3d Me-band (Me = Ti, V) is observed, while in the neighbourhood of the Fermi energy two peaks of DOS appear which consist of 3d Me- and vacancy states. Under the influence of vacancies the electronic charge in the carbon atomic sphere is shifted partly into the vacancy sphere. For Ti₄C₃, the increase of the Fermi energy and DOS at this energy is observed, while in the case of V₄C₃ these values decrease. In the presence of vacancies a contraction of crystal lattice is observed while the bulk moduli of TiC and VC diminish which is most pronounced for VC. The results are compared with previous data obtained by the LCAO coherent potential and APW calculations and with the experimental data concerning the DOS at the Fermi energy.     

Vacancy induced changes in the electronic structure of titanium carbide—I. Band structure and density of states

Results of a self-consistent “Augmented Plane Wave” (APW) band-structure calculation are presented for substoichiometric titanium carbide with 25% vacancies on the carbon sublattice sites (TiC_{0 75}) assuming a model structure with ordered vacancies Comparison with an earlier APW study on stoichiometric TiC reveals that the carbon vacancies induce two pronounced peaks in the density of states (DOS), 0.4 eV below and 0.8 eV above the Fermi energy E_γ, thus forming electronic states in a region where the DOS for stoichiometric TiC exhibits a minimum So-called “vacancy states” with an important amount of charge on the vacancy site are found to be derived from Ti 3d states extending into the vacancy muffin tin sphere An angular momentum decomposition with respect to the center of the vacancy muffin tin sphere shows that the s character predominates for the occupied and the p character for the unoccupied “vacancy states” The theoretical findings explain features near E_γ, observed in recently published X-ray emission spectra Furthermore, we find a slight increase of electronic charge in the carbon muffin tin spheres as compared with stoichiometnc TiC.     

Effect of correlation on electronic properties of NiO: A study from dynamical mean field theory

In order to describe a typical strongly correlated insulator NiO at electronic level, we perform a first principles calculation for temperature effect on electronic properties of NiO using a many-body method merging local density approximation (LDA) with dynamical mean field theory, so called the LDA+DMFT scheme. Band gap and density of states (DOS) are in good agreement with available experimental data and theoretical calculations, and Ni d-e_g and d-t_2g components both exhibit insulating character. Calculated hybridization functions indicate that Ni d-e_g states strongly hybrid with O p states at T = 58 K, 116 K, 145 K, 232 K and 464 K. In order to compare with experimental angle-resolved photoemission spectrum (ARPES), we also calculate momentum-resolved electronic spectrum function, which is established that obvious electronic excitation mainly arises from Ni d-t_2g states at temperature T = 232 K, and the spectrum functions between −0.5 eV and 0.0 eV are almost symmetric about certain k points. Finally, we analyze the effect of temperature on electronic properties of NiO by carrying out LDA+DMFT calculations at T = 58 K, 116 K, 145 K, 232 K and 464 K, respectively. Results show that temperature mainly influences the valence states of spectrum function and hybridization function, in particular high-lying states close to Fermi level. Electronic excitation distributions and spectrum characters in electronic spectrum function are also discussed.     

Phase diagram of the Mott transition in a two-band Hubbard model in infinite dimensions

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator transition is obtained analytically as a function of the on-site Coulomb interaction at the d-orbital, the charge-transfer energy between the d- and p-orbitals and the hopping integrals between p-d, d-d and p-p orbitals. The result is in good agreement with the numerical results obtained from the exact diagonalization method. Received 5 October 2000 and Received in final form 8 December 2000     

Electronic structure of MnSb

On the basis of a two center tight binding model the recursion method of Haydock et al. was applied to calculate spin polarized and non-polarized electronic densities of states and magnetic moments for the B8₁ crystal structure and a fictitious B32 structure of MnSb. The model implies the itinerant nature of the Mn d-states hybridizing with Sb p-states. For the non-polarized densities of states the self-consistent charge transfer amounts to 0.6 electrons from Mn to Sb with a band center difference of E_p ? E_d = - 0.75 eV. For the magnetic moments, which were also calculated self-consistently, 3.5 μ_B for the d-band and 3.34 μ_B in total were obtained for the B8₁ crystal structure. For the B31 structure bigger moments of 3.67 μ_B and 3.53 μ_B were obtained, correspondingly. The results for MnSb are also discussed with respect to very recent results for MnAs calculated within the same model. The local densities of states as obtained for MnSb are in good agreement with experimental XPS results.     

Role of zinc and nickel impurities in high-temperature superconductors

The local changes produced in the electronic structure and their effect on the physical properties of the superconducting and normal phases when zinc and nickel are substituted for copper are examined on the basis of a multiband p-d model. It is shown that strong electronic correlations suppress the S=1 configuration of Ni²⁺ and cause the superposition of the S=1/2 and S=0 states of nickel. The change in the density of states in p-and n-type systems is studied, and the peculiarity of Zn impurity for p-type systems and Ni impurity for n-type systems is shown. The universal dependence of the T _c on the residual resistance in lightly doped superconductors and deviations from it in optimally doped systems are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 596–600 (April 1999)     

Investigation of density-of-states in TiSi2 compounds

The electronic structure of TiSi and TiSi₂ was investigated by means of the energy distribution of photoelectrons emitted from the valence band and core levels. The Ti d-states are dominant at the Fermi level, the Si s-states of both TiSi and TiSi₂ were shifted to lower binding energy. The Si p-states are modified having peaks at binding energies 2.7 and 4.2 eV for TiSi₂ and 2.8 eV for TiSi but their intensities differ widely. The Si sp-states were not detectable for TiSi and TiSi₂ nor was the core level shift for TiSi₂.     

Contribution electronique au gradient de champ electrique sur une impurete de transition dans un environnement metallique anisotrope

The experimental data related to the electric field gradient at transition impurities either in hexagonal metals, or in cubic metals where the isotropy is perturbed by a next impurity, can be explained neither by the lattice contribution nor by the electronic contribution from the conduction band. A model is proposed here to investigate the electronic contribution arising from virtual bound 3d states on the impurity, by studying the local crystal field influence in a Friedel-Anderson model. It appears that at the 0°K limit, the localized electronic contribution to the EFG can be linearly related to the density n_d(?_F) of 3d states at the Fermi level. As a first approximation, this law is valid even at temperature different from 0°K so establishing a linear correlation between the EFG, the impurity resistivity and the amplitude of the charge perturbation around the impurity.     

Valence-level structure of phosphides of 3d-metals on the basis of XRS and ESCA data

For the first time, comprehensive X-ray spectroscopic and X-ray photoelectron data have been obtained on the energy spectra of valence electrons in phosphides of the transition metal series: TiP, CrP, MnP, FeP, NiP.Analysis of the experimental data on the electronic structure of phosphides of 3d-metals in the TiPNiP series indicates that the mechanism of interaction of the M 3d-states occurring near the top of the valence band with the s,p-states of phosphorus in the following sub-bands resides in the latter being induced near the d-sub-band as a result of the M 3d—P 3s,p interaction with the density maximum of the nearest P 3p-states being oppositely shifted as the number of d-electrons of the metal increases. Analysis of X-ray spectroscopic and X-ray photoelectron data on phosphides of transition metals along with those of metals of groups I(Cu, Ag) and II(Zn, Cd), and comparison of these data with the results of similar studies involving sulphides and silicides of the same metals indicate that the occupancy and the associated position of the d-shell of the metal within the valence band are the determining factors as far as the mutual arrangement of energy sub-bands and the symmetry of respective states are concerned.     

First principles study of electronic structure and optical properties of CaTiO3

The electronic-energy band structure, site and angular momentum decomposed density of states (DOS) and charge-density contours of perovskite CaTiO ₃ are calculated by the first principles tight-binding linear muffin-tin orbitals method with atomic sphere approximation using density functional theory in its local density approximation. The calculated band structure shows an indirect (R-Γ) band gap of 1.5 eV. The total DOS as well as the partial density of states (PDOS) are compared with the experimental photoemission spectra. The calculated DOS are in reasonable agreement with the experimental energy spectra and the features in the spectra are interpreted by a comparison of the spectra with the PDOS. The origin of the various experimentally observed bands have been explained. From the DOS analysis, as well as charge-density studies, we conclude that the bonding between Ca and TiO ₃ is mainly ionic and that the TiO ₃ entities bond covalently. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of CaTiO ₃ . The real and imaginary parts of the dielectric function and hence the optical constants such as refractive index and extinction coefficient are calculated. The calculated spectra are compared with the experimental results for CaTiO ₃ and are found to be in good agreement with the experimental results. The effective number of electrons per unit cell participating in the interband transitions are calculated. The role of band structure calculation as regards the optical properties of CaTiO ₃ is discussed. Received 1 February 2000 and Received in final form 21 July 2000     

Band structure of the superconducting MgB2 compound and modeling of related ternary systems

Band structure of a novel superconductor—magnesium diboride—is studied by the self-consistent FP-LMTO method. Density of states near the Fermi level of MgB₂ and its electronic properties are governed by the metal-like boron 2p orbitals in the planar network of boron atoms. The modification of the band structure of MgB₂ upon doping the boron (with Be, C, N, and O substitutional impurities) and the magnesium (with Be, Ca, Li, and Na substitutional impurities) sublattices or upon the introduction of structural vacancies (boron nonstoichiomety) is analyzed. The electronic structures of MgB₂ and hypothetical CaB₂ are also studied as functions of pressure.     

Electronic structure of LaNi and its hydride LaNi H

The electronic structure of LaNi₅ and its hydride LaNi₅H₇ are obtained using the self-consistent cluster-embedding calculation method. The Fermi level of LaNi₅H₇ is 5.172 eV higher than that of LaNi₅. In both materials, the La 5d electrons locate nearby the Fermi levels, and make only a small contribution to the density of states (DOS) of the valence bands. There is no significant charge transfer from La to Ni in LaNi₅. But for LaNi₅H₇, there is a charge transfer of 1.16 electrons from La to H, and H atoms are combined mainly with Ni to form hybridized orbitals in the energy regions far below the Fermi level. An explanation of hydrogenation of LaNi₅ is proposed: It is easy for hydrogens to take off some localized La 5 d electrons near the Fermi level, and combine with Ni to form hybridized orbitals in lower energy regions. This process is therefore in favor of energy, and forces a lattice expansion until the Fermi level rises to zero. Received 13 July 2001 / Received in final form 10 December 2001 Published online 17 September 2002     

The electronic and magnetic properties with intrinsic defects in ZnO nanosheets: First-principles prediction

Using full-potential linearized augmented plane wave (FLAPW) method, we investigated the effects of intrinsic vacancies on electronic and magnetic properties in graphene-like ZnO nanosheets. The results show that the oxygen vacancy (V_O) has no influence on magnetism in ZnO nanosheet, whereas the Zn vacancy (V_Zn) lead to spin polarization of the nanostructures with a total magnetic moment of 2.0μ_B due to O-2p and Zn-3d hybridization. When the distance of two V_Zn defects increases to 6.499 Å, the system shows an intriguing half-metallic character with 100% spin-polarized carriers due to O(2p)–Zn(3d)–O(2p) coupling chain between two V_Zn defects.     

Electronic structure of wurtzite and zinc-blende AlN

The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using X-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are calculated by using the full potential linearized augmented plane wave method, within the framework of the density functional theory. There is a relatively good agreement between the experimental spectra and the theoretical DOS, showing a large hybridization of the valence states all along the valence band. The discrepancies between the experimental and theoretical DOS, appearing towards the high binding energies, are ascribed to an underestimation of the valence band width in the calculations, or to extra states in the optical and ionic gaps due to the presence of point defects or impurities. Differences between the wurtzite and zinc-blende phases are small and reflect the slight variations between the atomic arrangements of both phases.Received: 25 October 2004, Published online: 23 December 2004PACS: 78.70.En X-ray emission spectra and fluorescence - 71.20.Nr Semiconductor compounds - 71.15.Mb Density functional theory, local density approximation, gradient and other corrections     

Electronic structure and X-ray spectra of transition metal sulfides NiS,CuS, and ZnS

A numerical electronic band structure calculations for sulfides NiS, CuS, and ZnS are carried out. Using the results a detailed analysis of a valence states is performed; obtained partial densities of states are compared with X-ray SL _2,3 and $ SK_{\beta _{1,3} } $ SK_{\beta _{1,3} } -emission spectra. We showed that spectrum lineshape depends on hybridization strength between various Me(3d)-orbitals and 3p-states of sulfur. The hybridization strength and the symmetry of hybrid Me(3d)-orbitals are defined by crystal lattice structure. Finally a well splitted in energy bonding and antibonding states Me(3d)-S(3p) appear while weakly hybridized Me(3d)-states mainly contribute to spectra intensity in the energy between them. A good agreement between the theoretical and the experimental spectra of valence band for considered sulfides is obtained.     

Doping and temperature dependence of the spin susceptibility in the p-d model

The spin magnetic susceptibility of the p-d model is calculated by means of a perturbation theory in the hybridization term V through a generalized cumulant expansion (GCE). The analysis is approached from the paramagnetic metallic phase. The results qualitatively reproduce some unusual magnetic properties in the normal state of the hole-doped cuprates, supporting the scenario of a Van Hove singularity near the Fermi level. Received 15 October 1998 and Received in final form 24 March 1999     

Tight-binding study of structural and electronic properties of silver clusters

Tight-binding model is developed to study the structural and electronic properties of silver clusters. The ground state structures of Ag clusters up to 21 atoms are optimized by molecular dynamics-based genetic algorithm. The results on small Ag_n clusters (n = 3-9) are comparable to ab initio calculations. The size dependence of electronic properties such as density of states, s-d band separation, HOMO-LUMO gap, and ionization potentials are discussed. Magic number behavior at Ag₂, Ag₈, Ag₁₄, Ag₁₈, Ag₂₀ is obtained, in agreement with the prediction of electronic ellipsoid shell model. We suggest that both the electronic and geometrical effect play significant role in the coinage metal clusters. Received 7 August 2000