共查询到19条相似文献,搜索用时 93 毫秒
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高增益、短波长自由电子激光器需要发射度低、峰值电流高的短脉冲电子束流.采用发射度补偿技术,设计了一台S波段、一个半腔体的光阴极微波电子枪以用于建议中的SDUV-FEL装置.POISSON,SUPERFISH和PARMELA程序的计算表明:当微脉冲电量为2nC时,这种设计能产生εn,rms=2.3π·mm·mrad、Ek=4.8MeV的电子束流.报道了该枪的设计考虑和模拟结果. 相似文献
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光阴极微波电子枪中发射度补偿及模拟计算 总被引:1,自引:0,他引:1
介绍了上海深紫外自由电子激光用光阴极微波电子枪采用发射度补偿技术的结果 .详细分析了线性空间电荷力的特点及对束流发射度的影响 ,从束流动力学和相空间两方面讨论了发射度补偿原理 .给出了补偿线圈的设计结构及其轴向场分布 .利用PARMELA程序对补偿效果作了模拟计算 .结果表明 ,设计的腔体对单圈 1 .5nC束团 ,在枪出口后 1 .2m处 ,电子能量为 5 .7MeV ,横向归一化发射度εn ,RMS=1 .61 2πmm·mrad. The emittance compensation technology will be used on the photo cathode RF gun for Shanghai SDUV FEL. In this paper, the space charge force and its effect on electron beam transverse emittance in RF gunis is studied, the principle of emittance compensation in phase space is discussed. We have designed a compensation solenoid and calulated its magnetic field distribution. Its performance has been studied by the code PARMELA. A simulation result indicates that the normalized transverse RMS emi... 相似文献
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本文以自由电子激光(FEL)用L-带行波电子直线加速器的注入器为例,用增补后的PARMELA程序对其作了束流动力学的三维计算,并给出了有关束流性能的各种参量. 相似文献
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正电子产额是正电子源的一个重要物理量,它的高低直接关系到加速器性能的优劣.此次BEPC(北京正负电子对撞机)改进,要全面升级到BEPCⅡ,正电子源系统的许多参数都要发生变化,必须对系统的各个部件参数重新优化设计,从而得到最大产额.本文采用全新方法,将EGS4(Electron-Gamma Shower)程序包和PARMELA(Phase and Radial Motionin Electron Linear Accelerator)程序紧密结合起来,完成正电子源优化设计工作.首先使用程序包EGS4,对高能电子在介质中的电磁级联过程进行了模拟,优化了靶厚度,讨论了影响打靶产额的因素.然后用PARMELA程序,接收EGS4的计算结果,对正电子在靶后的匹配、聚焦和加速系统中的运动逐个跟踪模拟,讨论了俘获节相位的选取,得到在正电源出口处的产额. 相似文献
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基于场发射的冷阴极微波电子枪兼具光阴极微波电子枪和热阴极微波电子枪的优点,可望提供低发射度、低能散以及较高流强的电子束,应用于自由电子激光等领域。介绍了这种电子枪的特点,以及在中国工程物理研究院应用电子学研究所的研究进展。场发射通常要求非常高的电场强度,通过对金刚石薄膜进行掺杂,可以降低其有效功函数,从而在相对低的场强下获得足够高的发射电流。结合场发射的特点,从腔型、反轰、加速效率以及束流孔径等方面对冷阴极微波电子枪进行了设计,并给出了初步的设计结果。利用粒子模拟程序对该电子枪的场发射情况进行了模拟,结果表明有望获得发射度很低的电子束团。 相似文献
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《强激光与粒子束》2017,(4)
近年来,对紧凑、稳定及可靠型电子直线加速器的需求越来越多,其能量主要分布在几百keV到十几个MeV的范围内,其中需求最多的则是能量在MeV量级的微波电子直线加速器。在这种形势下,中国科学院高能物理研究所正在研制一台S波段6 MeV的边耦合电子直线加速器,本文对基于该加速器的模拟计算研究进行了介绍。EGUN和HFSS分别用来设计电子枪和边耦合加速结构。通过将EGUN计算得到的电子束流参数和HFSS计算得到的三维电磁场分布数据引入到PARMELA中,完成了对该加速器的多粒子动力学研究。模拟结果显示,所设计的加速器完全能够满足设计指标的要求。最终,在考虑束流负载效应的因素后,完成了边耦合加速结构的微波结构设计。 相似文献
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对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析,提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型,该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响,模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的. 相似文献
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A. B. Petrin 《Journal of Experimental and Theoretical Physics》2009,109(2):314-321
We suggest a general approach to considering the thermionic, field, and thermionic field emissions of electrons from metals. For this purpose, based on the standard model of free electrons in a metal, we suggest a numerical method for determining the transmission coefficient through the potential barrier at the metal-vacuum interface suitable for an arbitrary barrier. This method is free both from the approximations based on the saddle-point approximation and characteristic of the analytical models for thermionic emission and from the approximations for the tunneling coefficient through the potential barrier characteristic of the models for field emission. Based on numerical simulations, we determine the thermal effect of the emission and ascertain that a very sharp transition from surface cooling by electron emission to heating occurs at certain electric field and temperature. We explain the triggering mechanism of the explosive electron emission observed during micropoint explosions by this phenomenon. The explosive emission is shown to begin when the level of the potential barrier at the micropoint tip drops below the Fermi level in the metal. 相似文献
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采用区域熔炼法成功制备出了高质量,高纯度,大尺寸的LaB6单晶体. 系统分析了制备过程中每个参数对LaB6单晶生长的影响,确定了晶体生长最佳工艺为:样品转速为30 r/min,生长速度为8-10 mm/h. 分析了单晶LaB6 (100) 晶面的热电子发射性能,结果表明,当阴极温度为1873 K时,最大热发射电流密度为44.36 A/cm2;利用 Richardson 直线法求出了绝对零度逸出功和有效逸出功分别为1.99和2.59 eV. 场发射测试结果表明,单晶LaB6场发射单尖最大场发射电流密度达到4.9×106 A/cm2,场发射因子为41500 cm-1,表现出良好的场发射性能. 因此单晶LaB6作为热阴极和冷阴极都具有很广阔的应用前景.
关键词:
区域熔炼法
6')" href="#">单晶LaB6
热发射性能
场发射性能 相似文献
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The electric field dependence of the work function of silicon was studied in ultra-high vacuum by thermionic emission at temperatures from 1200°K to 1600°K, and by photoemission at room temperature. A surface with isotropic work function was obtained by flashing the silicon samples at 1620°K. The emission current measured as a function of the applied field was found to follow a Schottky law, similar to the behaviour of metals. However, in contrast to the case of a metallic emitter, the slope of the Schottky plot is dependent on the temperature. The slope increases with increasing temperature reaching the value corresponding to a metal just below the melting point. From the shift of photoelectric threshold with electric field we obtain the lowering of the work function at room temperature. The experimental results are discussed in terms of two models for the image potential of a semiconductor. Periodic deviations from the Schottky effect were observed for both thermionic and photoelectric emission. 相似文献
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S. V. Bulyarskiy A. A. Dudin A. V. Lakalin A. P. Orlov A. A. Pavlov R. M. Ryazanov A. A. Shamanaev 《Technical Physics》2018,63(6):894-899
It has been found experimentally that the field emission current passing through a single multiwall carbon nanotube heats it up and generates a thermionic component. The nanotube is heated by the Joule heat that releases on its series resistance, through which the current passes. From the solution to the heat conduction equation, the overheating temperature of the emitting end has been estimated. Conditions for field emission stability and for the onset of thermal field emission have been found. 相似文献
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H. W. Haag 《Zeitschrift für Physik A Hadrons and Nuclei》1964,178(4):365-374
The field emission of a tungsten point cathode at very low emission currents was investigated by means of a secondary emission multiplier. The validity of the Fowler-Nordheim equation was experimentally confirmed within the range from 10?8 to 10?19 A. The dependence of the total emission current on temperature and electrical field strength was measured in the transition region between thermionic and field emission. A comparison is drawn with the theory ofMurphy andGood. 相似文献
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单晶LaB_6热阴极稳定性研究 总被引:2,自引:2,他引:0
介绍了用于1+1/2射频腔中的LaB_6热阴极电子枪的结构,通过分析电子枪阴极的热平衡关系和高温、强射频场条件下的阴极电流发射情况,给出了LaB_6热阴极电子枪的热平衡和发射电流的关系曲线,并对阴极稳定性问题进行了仔细研究。 相似文献