160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laser

We characterized the reflectivity and the modal discrimination of intracavity reflectors (ICRs) with different numbers of slots and presented harmonic mode-locking operation of a monolithic semiconductor laser comprising a compound cavity formed by a single deeply etched slot ICR fabricated from 1.55 μm AlGaInAs strained quantum well material. Gaussian pulses were generated at a 161.8 GHz repetition rate with a pulse duration of 1.67 ps and a time-bandwidth product of 0.81.     

Low divergence angle and low jitter 40 GHz AlGaInAs/InP 1.55 μm mode-locked lasers

We demonstrate a novel (to the best of our knowledge) 40?GHz passively mode-locked AlGaInAs/InP 1.55?μm laser with a low divergence angle (12.7°×26.3°), timing jitter of 1.2?ps (10?kHz-100?MHz), and a radio frequency linewidth of 25?kHz.     

Nanosecond high-pulse energy 1.57 μm KTA optical parametric amplifier with time delay

An efficient two-stage KTi OAO4 optical parametric amplifier(OPA) system with walk-off-compensating alignment is designed. By introducing an extra time delay between the pump pulse and the signal pulse, this OPA architecture is capable of obtaining high optical conversion efficiency and high signal gain simultaneously.Finally, a maximum gain of 98 at the 1.57 μm wavelength is obtained with the signal beam quality of M2 around5.6. The efficiency of the optical conversion from 1.064 to 1.57 μm is around 26%.     

Picosecond optical switching of a 1.5 μm active birefringent optical fiber loop filter using 1.3 μm control optical pulses and a 1.3 μm semiconductor optical amplifier

Less than 100ps, polarization-independent switching operation of an active birefringent optical fiber loop filter using 1.3 μm control optical pulses as well as a 1.3 μm semiconductor optical amplifier (SOA) has been demonstrated. In the proposed SOA-based active birefringent filter operating at 1.55 μm wavelength, 1.3 μm SOA is employed to control the polarization-mode dispersion in the loop part. By injecting 1.3 μm ps gain-switched optical control pulses into the SOA, 1.5 μm input signals can be switched from the transmission port to the reflection port with less than 100 ps rise time.     

Geometrical dependence of optical negative index meta-materials at 1.55 μm

We have studied the geometry dependency of fishnet-like negative refractive index meta-materials (NIMs), and developed a process to fabricate such NIMs using nanoimprint lithography (NIL) in a controlled way for it to achieve negative refractive index in the desired frequency range. As an example, we fabricated a fishnet structure with a minimum negative refractive index of −1.7 at 1560 nm, which was only 10 nm off the targeted wavelength of 1550 nm.     

A proposed ultra low-noise optical receiver for 1.55 μm applications

A high-sensitivity optical receiver based on InP/InGaAs superlattice avalanche photodiode (SL-APD) followed by an InGaAs MESFET transimpedance pre-amplifier has been proposed for operation in 1.55 m wavelength region. The proposed optical receiver may be realised in the hybrid integrated circuit form. The low excess-noise factor of the SL-APD significantly reduces the value of minimum detectable optical power and improves the sensitivity of the over all receiver. The proposed receiver has been analysed theoretically. The results of computation show that the device has a high transimpedance gain (60 dB-ohm) with a bandwidth of 11 GHz for a photodetector capacitance of 110 fF. The sensitivity of the receiver has been found to be (–27.3d Bm) at operating bit rate of 15 Gb/s for a bit-error-rate of 10^–9. The performance of the receiver can be optimised in respect of transimpedance gain, bandwidth and sensitivity by following guidelines provided in this paper. The proposed photoreceiver outperforms the existing receivers based on p-i-n/FET or conventional APD/FET photoreceivers.     

1.55μm InGaAsP/InP应变量子阱激光器的LP－MOCVD生长

本文首次报导了生长温度为550℃,以三甲基镓(TMGa)和三甲基铟(TMIn)为Ⅲ族源,用低压金属有机物气相沉积(LFMOCVD〕技术,高质量1.62um和1.3umInGaAsP及In_0.57Ga_0.43As_0.98P_0.04/In_0.73Ga_0.27As_0.6P_0.4量子阶结构的生长,并给出了1.55umGaAsP/InP分别限制应变量子阱结构激光器的生长条件,激光器于室温下脉冲激射,其阈值电流密度为2.4kA/cm².     

Reduction of the threshold temperature sensitivity of 1.55 μm InGaAsP lasers by subnanosecond optical excitation

In GaAsP lasers operating at 1.5 to 1.6 m were pumped optically with a pulsed 1.06 m source. The temperature dependence of the pump energy at laser threshold has been measured for temperatures from 170 to 330 K. Pump pulse widths of 300 ns and 150–300 ps were employed, long and short compared to the carrier life-time in the laser material. Over the high-temperature range of 260 to 330 K short pulse excitation gives a considerable reduction of the threshold temperature sensitivity with a characteristic temperatureT ₀ =85 K compared to T ₀ ^h =45 K for long-pulse excitation. This is in qualitative agreement with previous results on electrically excited lasers although the temperature sensitivity of the optically excited lasers is larger. At temperatures between 170 to 260 K no reduction of the temperature sensitivity was observed.     

1.55μm InGaAsP/InP LED的研究

本文报导了1.55μm InGaAsP/InP LED的制造工艺和性能测量.在100mA正向电流下,LED与多模光纤和单模光纤耦合后的出纤功率分别为20～30μW和2—4μW.讨论了获得准确p-n结位置的方法.     

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

We fabricate a Ga As-based In Ga As/In Ga As P multiple quantum wells(MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature In P layer and a thick In P buffer layer are grown on Ga As substrates by low-pressure metal organic chemical vapor deposition technology. Then, highquality MQWs laser structures are grown on the In P buffer layer. Under quasi-continuous wave(QCW) condition, a threshold current of 476 m A and slope efficiency of 0.15 m W/m A are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is1549.5 nm at 700 m A. The device is operating for more than 2000 h at room-temperature and 600 mA.     

InGaAsP/InP 1.55-μm lasers with chemically assisted ion beam-etched facets

Chemically assisted ion beam etching (CAIBE) involving an Ar ion beam and a halogen ambient gas (Cl₂, IBr₃) has been used to etch high-quality laser facets for InGaAsP/InP bulk lasers (1.55 m). We achieved eich rates of 40.0–75.0 nm min^–1 at substrate temperatures between-5 and +10°C. These low temperatures have allowed us to utilize UV-baked photoresists as well as PMMA as etch masks, facilitating very simple process development. Higher substrate temperatures (50 to 120°C) yield still higher etch rates, but at the expense of severely degraded surface morphologies. Angle resolved x-ray photoelectron spectroscopy (XPS) was investigated for observing etched InP surfaces. A disproportioned surface has been detected after etching in the higher temperature range; low temperatures yield stoichiometric surfaces.     

InP-based 1.3/1.55 μm wavelength demultiplexer with multimode interference and chirped grating

We propose a novel 1.3/1.55 m wavelength demultiplexer for integration with lasers and detectors on the InP material system. A chirp grating is placed inside a multimode interference (MMI) structure to shorten the device length and increase wavelength tolerance. The simulation using the bi-directional beam propagation method proves that the demultiplexer can have very low insertion loss and high isolation ratio. The approach of grating fabrication is also described.     

AlGaInAs multiple-quantum-well 1.2-μm semiconductor laser in-well pumped by an Yb-doped pulsed fiber amplifier

An AlGaInAs multiple quantum well structure is reported as an effective gain medium of the in-well pumped high-peak-power semiconductor disk laser at 1.2 μm. We use an Yb-doped pulsed fiber amplifier as the pump source to effectively optimize the output characteristics. The maximum average output power of 1.28 W and peak output power of 0.76 kW is obtained at 1225 nm lasing wavelength under 60 kHz pump repetition rate and 28 ns pump pulse width.     

Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE

In_xGa_1−xAs/GaAs pseudomorphic structures were grown by metalorganic vapor phase epitaxy. Reciprocal space mapping were recorded in the vicinity of (0 0 4) and (1 1 5) nodes using high resolution X-ray diffraction (HRXRD) in order to determine strain tensor components, indium compositions and thicknesses of alloys. Near-infrared photoluminescence (PL) was performed at 10 K. The impact of strain on PL response was revealed by peak energy positions and line width. In addition, valence-band splitting (VBS) and the shift of the heavy-hole were measured. Besides, photoreflectance (PR) at room temperature was useful to establish experimentally the dependence of VBS and band energy shifts (E₀ and E₀+∆₀) on elastic strain due to lattice mismatches. Other parameters such as the internal electric-field and the electro-optical energy were determined from Franz–Keldysh oscillations analysis. Good correlation between the results obtained from all investigated techniques and theoretical predictions was confirmed.     

High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers

High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of >1 W.     

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of . The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.     

InAs/GaSb superlattices grown by LP-MOCVD for ∼10 μm wavelength infrared range

A type-II InAs/GaSb superlattice (SL) was grown on Te-doped (1 0 0) GaSb substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). The samples were obtained at different growth temperatures and with different interface layers. By introducing an InAsSb interface layer between InAs and GaSb, a good surface morphology of the superlattice was achieved when the sample growth temperature was around 500–520 °C. The photoluminescence (PL) peak wavelength of the sample was 10.7 μm at 77 K, with FWHM of ∼30 meV.     

Fabrication and Performance of 1.55 μ/m Transmission Glass-Echelon Grating Filters

This paper describes the fabrication method and the measured spectral behavior of a 1.55 μm transmission glass-echelon grating filter. This echelon grating consists of a pile of identical plane-parallel glass plates constructed using a special assembling tool. The experimental result confirmed the accuracy of the Fourier transform which indicated that the spectral passband width was inversely proportional to the beam size. This feature makes it possible to use the filter as a bandpass filter or a comb filter when constructing photonic networks. The echelon filter has certain intrinsic advantages including a low insertion loss and polarization independence. Moreover, it offers good cost performance and excellent design flexibility.     

1.3 μm planar buried heterostructure distributed feedback lasers grown by four-step MOVPE

Data are presented on InGaAsP/InP planar buried heterostructure (PBH) distributed feedback (DFB) lasers operating at 1.3 m. A four-step MOVPE process and holographic lithography are employed to fabricate these lasers. The CW laser threshold and the slope efficiency from these lasers are 9 mA and 0.23 mW mA^-1 per facet at room temperature. Single-longitudinal-mode operation with side-mode suppression of more than 35 dB is obtained at 5 mW.     

Generation of a squeezed state at 1.55 μm with periodically poled LiNbO3

We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.