Einkristalle von Y3F[Si3O10] im Thalenit-Typ

Single Crystals of Y₃F[Si₃O₁₀] with Thalenite-Type Structure Colourless, diamond-shaped single crystals of Y₃F[Si₃O₁₀] (monoclinic, P2₁/n; a = 730.38(5), b = 1112.47(8), c = 1037.14(7) pm, β = 97.235(6)°, Z = 4) with thalenite-type structure are obtained upon the reaction of YF₃ with Y₂O₃ and SiO₂ (1 : 4 : 9 molar ratio) in evacuated silica tubes at 700 °C in the presence of CsCl as flux within seven days. The crystal structure consists of triangular [FY₃]⁸⁺ cations and catena-trisilicate anions [Si₃O₁₀]^8–, which exhibit a horseshoe-shape resulting from two vertex-shared terminal [SiO₄] tetrahedra with both staggered and eclipsed conformation relative to the central one. The Y³⁺ cations have coordination numbers of seven plus one (Y1) or seven (Y2 and Y3), but only one F^– anion belongs to each and vice versa, the remainder ligands being oxygen members of [Si₃O₁₀]^8– anions.     

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si₃N₄ and Si₂N₂O are formed as the nitridation products in the samples. Fibroid and short columnar Si₃N₄ are detected in the samples. The formation mechanisms of Si₃N₄ and Si₂N₂O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O₂ in N₂ atmosphere, forming a thin film of SiO₂ on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO₂ film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO₂ film will crack, and N₂ is infiltrated into the central section of the sample through cracks, generating Si₂N₂O and short columnar Si₃N₄ in situ. At the same time, metastable SiO(g) reacts with N₂ and form fibroid Si₃N₄. In the regions where the oxygen partial pressure is high, Si₃N₄ is oxidized into Si₂N₂O.     

Theoretical investigation on the IR spectra of four‐membered silicon oxide ring

To test the mass effect on the ring vibrational frequencies (SiO₂) shift of the four‐membered silicon oxide ring, the deuterium and the tritium substituted cyclodisiloxanes on the hydrogen positions are examined at the CCSD(T)/cc‐pVTZ level of theory. The SiO₂ ring vibrations for a silicon oxide surface model compound, substituted cyclodisiloxane (Si₃O₅? O₂? Si₃O₅) with two six‐membered ring, are also calculated at the B3LYP/cc‐pVTZ level of theory. Our results of 909 and 920 cm^?1 are in good agreement with the experimental result. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011     

Na6Si2O7 – The Missing Structural Link among Alkali Pyrosilicates

The crystal structure of sodium pyrosilicate (Na₆Si₂O₇) was solved from single crystal diffraction data and refined to an R index of 0.051 for 17034 independent reflections. The compound is triclinic with space group P (a = 5.8007(8) Å, b = 11.5811(15) Å, c = 23.157(3) Å, α = 89.709(10)°, β = 88.915(11)°, γ = 89.004(11)°, V = 1555.1(4) Å³, Z = 8, D_x = 2.615 g · cm^–3, μ(Mo‐K_α) = 7.94 cm^–1). A characteristic feature of the crystals is a twinning by reticular pseudo‐merohedry, which simulates a much larger monoclinic C centered lattice (V′ = 6220 Å³, Z = 32). The twin element corresponds to a twofold rotation axis running parallel to the [0 direction of the triclinic cell. The compound belongs to the group of sorosilicates, i.e. it is based on [Si₂O₇] groups, which are arranged in layers parallel to (100). Charge compensation within the structure is accomplished by monovalent sodium cations distributed among 24 crystallographically independent positions. They are coordinated by four to six nearest oxygen neighbors. Most of the coordination polyhedra can be approximately described as distorted tetrahedra or tetragonal pyramids. An alternative understanding of Na₆Si₂O₇ can be gained if the tetrahedrally coordinated sodium atoms are considered for the construction of a framework. Actually, each four of the dimers within a single slice are linked by a more or less distorted [NaO₄] tetrahedron. The resulting structural motif is similar to the one that can be observed in melilites, where linkage between the T₂O₇ (T: Al, Si) moieties is provided by [MgO₄]‐ (as in akermanite, Ca₂Mg[Si₂O₇]) or [AlO₄] tetrahedra (as in gehlenite, Ca₂Al[AlSiO₇]). By sharing common edges, the [NaO₄] tetrahedra in Na₆Si₂O₇ are forming columns running parallel to 25 . The resulting framework contains tunnels in which the more irregularly coordinated sodium cations are incorporated.     

Ab initio chemical kinetics for the unimolecular decomposition of Si2H5 radical and related reverse bimolecular reactions

For plasma enhanced and catalytic chemical vapor deposition (PECVD and Cat‐CVD) processes using small silanes as precursors, disilanyl radical (Si₂H₅) is a potential reactive intermediate involved in various chemical reactions. For modeling and optimization of homogeneous a‐Si:H film growth on large‐area substrates, we have investigated the kinetics and mechanisms for the thermal decomposition of Si₂H₅ producing smaller silicon hydrides including SiH, SiH₂, SiH_3, and Si₂H₄, and the related reverse reactions involving these species by using ab initio molecular‐orbital calculations. The results show that the lowest energy path is the production of SiH + SiH₄ that proceeds via a transition state with a barrier of 33.4 kcal/mol relative to Si₂H₅. Additionally, the dissociation energies for breaking the Si? Si and H? SiH₂ bonds were predicted to be 53.4 and 61.4 kcal/mol, respectively. To validate the predicted enthalpies of reaction, we have evaluated the enthalpies of formation for SiH, SiH₂, HSiSiH₂, and Si₂H₄(C_2h) at 0 K by using the isodesmic reactions, such as ²HSiSiH₂ + ¹C₂H₆→¹Si₂H₆ + ²HCCH₂ and ¹Si₂H₄(C_2h) + ¹C₂H₆ → ¹Si₂H₆ + ¹C₂H₄. The results of SiH (87.2 kcal/mol), SiH₂ (64.9 kcal/mol), HSiSiH₂ (98.0 kcal/mol), and Si₂H₄ (68.9 kcal/mol) agree reasonably well previous published data. Furthermore, the rate constants for the decomposition of Si₂H₅ and the related bimolecular reverse reactions have been predicted and tabulated for different T, P‐conditions with variational Rice–Ramsperger–Kassel–Marcus (RRKM) theory by solving the master equation. The result indicates that the formation of SiH + SiH₄ product pair is most favored in the decomposition as well as in the bimolecular reactions of SiH₂ + SiH₃, HSiSiH₂ + H₂, and Si₂H₄(C_2h) + H under T, P‐conditions typically used in PECVD and Cat‐CVD. © 2013 Wiley Periodicals, Inc.     

Neutral Pentacoordinate Silicon(IV) Complexes with a Tridentate Dianionic O,N,O or N,N,O Ligand,an Anionic PhX Ligand (X = O,S, Se), and a Phenyl Group: Synthesis and Structural Characterization in the Solid State and in Solution

A series of neutral pentacoordinate silicon(IV) complexes with a SiO₃NC, SiO₂SNC, SiO₂SeNC, SiO₂N₂C, SiOSN₂C, or SiOSeN₂C skeleton was synthesized and structurally characterized by multinuclear NMR spectroscopy in the solid state and in solution and by single‐crystal X‐ray diffraction. The compounds studied contain a tridentate dianionic O,N,O or N,N,O ligand, an anionic PhX ligand (X = O, S, Se), and a phenyl group. The structures, NMR spectroscopic parameters, and chemical properties of these silicon(IV) complexes were compared with those of related compounds that contain a tridentate dianionic S,N,O ligand instead of the O,N,O or N,N,O ligand.     

Die neuen Schichtsilicate Ba3Si6O9N4 und Eu3Si6O9N4

The New Layer‐Silicates Ba₃Si₆O₉N₄ and Eu₃Si₆O₉N₄ The new oxonitridosilicate Ba₃Si₆O₉N₄ has been synthesized in a radiofrequency furnace starting from BaCO₃, amorphous SiO₂ and Si₃N₄. The reaction temperature was at about 1370 °C. The structure of the colorless compound has been determined by single‐crystal X‐ray diffraction analysis (Ba₃Si₆O₉N₄, space group P3 (no. 143), a = 724.9(1) pm, c = 678.4(2) pm, V = 308.69(9)· 10⁶ pm³, Z = 1, R1 = 0.0309, 1312 independent reflections, 68 refined parameters). The compound is built up of corner sharing SiO₂N₂ tetrahedra forming corrugated layers between which the Ba²⁺ ions are located. Substitution of barium by europium leads to the isotypic compound Eu₃Si₆O₉N₄. Because no single‐crystals could be obtained, a Rietveld refinement of the powder diffractogram was conducted for the structure refinement (Eu₃Si₆O₉N₄, space group P3 (no. 143), a = 711.49(1) pm, c = 656.64(2) pm, V = 287.866(8) ·10⁶ pm³, R_p = 0.0379, R_F² = 0.0638). The ²⁹Si MAS‐NMR spectrum of Ba₃Si₆O₉N₄ shows two resonances at ?64.1 and ?66.0 ppm confirming two different crystallographic Si sites.     

Composition optimization and UV‐annealing dependence on the electrical properties of Hf1−xSixO2/Si gate stacks

Hf_1?xSi_xO₂ gate dielectrics grown by UV‐photo‐induced chemical vapor deposition (UV‐CVD) using Hf(OBu^t)₂(mmp)₂ and tetraethoxysilane as precursors have been deposited on Si substrate. Composition dependence of the interfacial microstructure of the Hf_1?xSi_xO₂/Si gate stacks has been investigated via Fourier transform infrared spectroscopy (FTIR) systematically. It has been indicated that the physical properties of the Hf_1?xSi_xO₂ films can be effectively optimized by adjusting the silicon contents incorporated in the films. In order to evaluate its potential implementation as an alternative dielectric in future devices, detailed electrical characterization of Au/Hf_1?xSi_xO₂/Si capacitor has been performed as functions of the silicon contents and the UV‐annealing time. Copyright © 2010 John Wiley & Sons, Ltd.     

New Examples for the Unexpected Stability of the 10π‐Electron Hückel Arene [Si6]10–

The compounds Ba₄Ag₂Si₆, Eu₄Ag₂Si₆, and Ca₄Ag₂Si₆, prepared from the elements at 1273 K (the components in inner corundum crucibles are enclosed in sealed quartz ampoules), are brittle semiconductors with silvery luster. They react slowly with acids liberating hydrogen. Ba₄Ag₂[Si₆] and Eu₄Ag₂[Si₆] crystallize like Ba₄Li₂[Si₆] (space group Fddd (No. 70); a = 8.613 Å, b = 14.927 Å, c = 19.639 Å, and a = 8.420 Å, b = 14.585 Å, c = 17.864 Å, respectively), whereas Ca₄Ag₂[Si₆] represents a new structure type (space group Fmmm (No. 69); a = 8.315 Å, b = 14.391 Å, c = 8.646 Å). The three compounds are Zintl phases with the formal charges M²⁺, Ag⁺ and [Si₆]^10–. The mean bond lengths d(Si–Si) = 2.335–2.381 Å in the 10π‐Hückel arene [Si₆]^10– as well as d(Ag–Si) = 2.464–2.595 Å vary with the size of the M²⁺ cations. The chemical bonding was analyzed in terms of the Electron Localization Function (ELF) and compared with the bonding in related systems (Ce₄Co₂Si₆).     

Beiträge zur Chemie der Silicium-Stickstoff-Verbindungen. CV. Ringschlußreaktionen mit 1,5-Bis(alkylamino)trisildioxanen

1.5-Bis(methylamino)hexamethyltrisildioxane reacts in the presence of triethylamine easily with germanium tetrachloride (equ. 1) and ethyldichlorophosphine (equ.2) to give the formerly unknown inorganic eightmembered ring systems Si₃GeN₂O₂ and Si₃PN₂O₂. Respectively. By analogous reacting of silicon tetrachloride only open chained Cl₃Si? Nme? Sime₂? O? Sime₂? O? Sime? NHme (IV; equ. 3) is formed. With metallated 1.5-bis(alkylamino)trisildioxanes, dischlorodiorganylsilanes do not give the expected asymmetric-, but the symmetric cyclotetrasildioxdiazanes V–VII. Dichlorophenylborane, in an analogous reaction, leads to the novel eightmembered ring system BSi₃N₂O₂, but the exact position of the N and O atoms in the ring could not be fixed beyond any doubt. The novel sixmembered ring system BSi₂Ni₂O was realized in compound IX via equ. (6).     

Synthesis and Structural Characterization of Novel Neutral Higher‐Coordinate Silicon(IV) Complexes with SiON3C and SiON4C Skeletons

The neutral pentacoordinate silicon(IV) complex 10 (SiON₃C skeleton) and the neutral hexacoordinate silicon(IV) complex 11 (SiON₄C skeleton) were synthesized, starting from methyldi(thiocyanato‐N)silane ( 7 ). In addition to their monodentate thiocyanato‐N and methyl ligands, these compounds contain a tridentate dianionic O,N,N ligand ( 10 ) or a tridentate monoanionic O,N,N ligand ( 11 ). Compounds 10 and 11 were characterized by single‐crystal X‐ray diffraction and solid‐state and solution NMR spectroscopy. According to these studies, compounds 10 and 11 exist in solution as well.     

Matrixreaktionen von SiO. IR-spektroskopischer Nachweis der Molekeln SiO2 und OSiCl2

Matrix Reactions of SiO. IR-spectroscopic Identification of the Molecules SiO₂ and OSiCl₂ SiO evaporated from Knudsen cell reacts in argon matrix with atomic oxygen generated by microwave excitation to molecular SiO₂. Bands at 1400 cm^?1 in the IR matrix spectrum are assigned to the ν₃-vibration of molecules Si¹⁶O₂, Si¹⁶O¹⁸O, and Si¹⁸O₂. In an argon matrix SiO can reach with Cl₂ by excitation of a high pressure mercury lamp to OSiCl₂. Isotopic splitting (¹⁶O/¹⁸O, ²⁸Si/²⁹Si, ³⁵Cl/³⁷Cl) and force constant calculations show that the observed frequencies can be assigned to a planar molecule OSiCl₂. The bending mode δ (SiCl₂) could not be observed. The force constant f(SiO) is 9. 10² N m^?1 for SiO₂ and OSiCl₂. According to the SIEBERT rule this valence force constant is expected for a double bond between silicon and oxygen.     

Siliciding of titanium carbides with gaseous SiO

Titanium carbides of different stoichiometries were silicided with gaseous SiO at 1350°C. A mechanical mixture of silicon and silicon dioxide was used as a reaction source of SiO. Ti₃SiC₂, TiSi₂, and Ti₅Si₃ were the main reaction products, the phase composition of which strongly depended on the titanium carbide stoichiometry. The siliciding of carbides with a nearly stoichiometric carbon content resulted in the formation of Ti₃SiC₂, on the surface of which the other silicide phases, such as Ti₅Si₃ and TiSi₂, began to form. For titanium carbides with a low carbon concentration, Ti₅Si₃ was the only siliciding product.     

An improved procedure for syntheses of silyl derivatives of the cubeoctameric silicate anion

The reaction of the Si₈O₂₀^8? silicate anion with X(CH₃)₂SiCl (X?H or CH₃) has been studied to develop a cost‐effective procedure for synthesizing Si₈O₂₀[Si(CH₃)₂X]₈ in high yield. Use of hexane as solvent and adjustment of the reaction temperature to ca 20 °C were found to be effective in promoting the reaction, by which Si₈O₂₀[Si(CH₃)₂X]₈ could be produced in good yield employing 24 mol of X(CH₃)₂SiCl per mole of Si₈O₂₀^8?. It was also demonstrated that the yield of Si₈O₂₀[Si(CH₃)₂X]₈ depends on the amount of solvent, suggesting that the amount is an important factor when scaling up the reaction to produce a large quantity of Si₈O₂₀[Si(CH₃)₂X]₈. Copyright © 2003 John Wiley & Sons, Ltd.     

KSbO(Ge0.32Si0.68)O4, a KTP isomorph

A structural model of potassium antimony germanate/silicate (0.32/0.68), KSbO(Ge_0.32Si_0.68)O₄, has been determined at room temperature. KSbO(Ge_0.32Si_0.68)O₄ belongs to the KTiOPO₄ (KTP) isomorphic family and is composed of SbO₆ octahedra (site symmetry and 2) arranged in helical chains bridged by (Ge/Si)O₄ tetrahedra. Germanium and silicon have a similar distribution in the crystallographically independent tetrahedra (site symmetry 2). The structure contains large cavities occupied by the K atom. Two partially occupied potassium positions have been identified 1.273 (8) Å apart, with an indication of a third potassium position between them. At room temperature, KSbO(Ge_0.32Si_0.68)O₄ crystallizes in the paraelectric phase of space group Pnan. This phase is found at elevated temperatures for almost all KTiOPO₄ isomorphic compounds and KSbO(Ge_0.32Si_0.68)O₄ is the second isomorph that is paraelectric at room temperature.     

The Ionic Conductivity of Ultrafine Solid Electrolytes for Li4.4Al0.4Si0.6O4‐xY2O3 Systems

The Li_4.4Al_0.4Si_0.6O₄‐xY₂O₃ (x = 0 to 0.5) ion conductors were prepared by the Sol‐Gel method and examined in detail. The powder and sintered samples were characterized by DTA‐TG, XRD, SEM, and AC impedance techniques. The experimental results show that the conductivity and sinterability increased with the amount of excess Y₂O₃ in the silicate. The particle size of the powder samples is about 0.12 μm. The maximum conductivity at 16 °C is 2.925 × 10^?5s·cm^?1 for Li_4.4Al_0.4Si_0.6O₄‐0.3 Y₂O₃.     

KF/Al2O3催化下4-芳基-9,10-二氢萘并[2,1-b]-4H-吡喃衍生物的合成

在KF/Al₂O₃催化下, α,β-不饱和腈或α,β-不饱和羧酸酯和7-甲氧基-1,2,3,4-四氢-2-萘酮反应, 生成了一系列4-芳基-9,10-二氢萘并[2,1-b]-4H-吡喃衍生物. 产物的结构通过红外光谱和核磁共振氢谱进行表征, 并通过X单晶衍射分析进一步证实产物的结构.     

Silyl‐functionalized Silsesquioxanes: New Building Blocks for Larger Si‐O‐Assemblies,including the First Si‐Si‐Bonded Silsesquioxanes

Novel silyl‐functionalized silsesquioxane building blocks have been prepared by treatment of Cy₇Si₇O₉(OH)₃ ( 1 , Cy = c‐C₆H₁₁) with hexachlorodisilane or hexachlorodisiloxane, respectively, in the presence of triethylamine. Reactions in a 1:1 molar ratio afforded the trichlorosilyl‐functionalized silsesquioxane derivatives Cy₇Si₈O₁₂SiCl₃ ( 2 ) and Cy₇Si₈O₁₂OSiCl₃ ( 3 ). Related bis(silsesquioxanes), (Cy₇Si₈O₁₂)₂ ( 4 ) and (Cy₇Si₈O₁₂)₂O ( 5 ) are accessible in a similar manner by employing a 2:1 molar ratio of the reactands. Compound 1 also served as a starting material in the preparation of the partially closed silsesquioxane cages Cy₇Si₇O₁₁(OH)SiMe₂ ( 6 ) and Cy₇Si₇O₁₁(OH)Si(OEt)₂ ( 7 ), while the related condensation product Cy₇Si₇O₁₀(OSiMe₃) ( 9 ) was made by AlCl₃‐catalyzed elimination of water from Cy₇Si₇O₉(OH)₂OSiMe₃ ( 8 ). The molecular structure of 9 was determined by X‐ray diffraction.     

A high-capacity cathode based on silicates material for advanced lithium batteries

Silicate materials have been proposed as alternative cathodes for Li-ion battery applications. A novel mixture of silicates, labelled Li₆MnSi₅, based on the molar ratio among the Li/Mn/Si precursors, with promising electrochemical properties as positive electrode material is synthesized through a solid-state reaction. The results indicate the proposed synthetic method as effective for preparation of nanostructured silicate powders with average particle diameter of 30 nm. Structural morphology of the samples was determined using X-ray powder diffraction (XRPD), XPS and FESEM analysis. A joint analysis by XRPD data and by density functional theory (DFT) identified LiHMn₄Si₅O₁₅, Li₂Mn₄Si₅O₁₅, Li₂Si₂O₅ and Li_0.125Mn_0.875SiO₄ as components of Li₆MnSi₅ mixture. The electrochemical performance of Li₆MnSi₅ was evaluated by charge/discharge testing at constant current mode. Li₆MnSi₅ discharge behaviour is characterized by high capacity value of 480 mA h g^?1, although such capacity fades gradually on cycling. Ex situ XPS studies carried out on the electrode in both full charged and discharged states pointed out that Li₂Si₂O₅ is decisive for achieving such high capacity. The discharge/charge plateau is most probably related to the change in the oxidation state of silicon at the surface of the silica material.     

Micro-thermal analysis of thermal conductance distribution in advanced silicon nitrides

A micro-thermal analysis technique was applied to investigate advanced silicon nitride materials, which exhibit high thermal conductivity. Local thermal properties in the microstructure were evaluated, and the grain boundaries were observed to have lower thermal conductance than the Si₃N₄ grains. It was found that thermal conductance both in the grains and boundaries was lowered by the addition of the sintering aid Al₂O₃, which is soluble in Si₃N₄ grains. This indicates that high thermal conductivity in silicon nitride ceramics is achieved both by grain growth, leading to a reduction in boundary density, and by eliminating soluble elements in silicon nitride grains. This revised version was published online in August 2006 with corrections to the Cover Date.