Asymmetrically shaped hysteresis loop in exchange-biased FeNi/FeMn film

The magnetization reversal of the bilayer polycrystalline FeNi(50 Å)/FeMn(50 Å) film sputtered in a magnetic field has been studied by magnetic and magneto-optical techniques. The external magnetic fields were applied along the easy or hard magnetization axis of the ferromagnetic permalloy layer. The asymmetry of hysteresis loop has been found. Appreciable asymmetry and the exchange bias were observed only in the field applied along the easy axis. The specific features of magnetization reversal were explained within the phenomenological model that involves high-order exchange anisotropy and misalignment of the easy axes of the antiferromagnetic and ferromagnetic layers. It has been shown that the film can exist in one of three equilibrium magnetic states in the field applied along the easy axis. The transitions between these states occur as first-order phase transitions. The observed hysteresis loop asymmetry is related to the existence of the metastable state.     

Electrical and magnetic properties of CoFeAlO thin films

Influences of oxygen-partial pressure and annealing on the electrical and magnetic properties of CoFeAlO thin films were systematically investigated by means of resistivity, permeability, magnetization and ferromagnetic resonance (FMR) measurements. It was found that, with increasing oxygen-partial pressure or under annealing, the electrical resistivity of the film increased and the magnetic softness decreased, which is attributed to the microstructural change of the film. Interestingly, an as-deposited Co_45.30Fe_20.65Al_19.34O_14.71 film was found to exhibit an inverted hysteresis loop with negative coercivity, and this peculiar phenomenon disappeared upon effects of oxygen-partial pressure and annealing. It was also found that the as-deposited films owned a narrow FMR line width that increased with increasing oxygen-partial pressure or under annealing.     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.     

Magneto-optical imaging of elastic strain-controlled magnetization reorientation

We study strain-controlled magnetization-reorientation processes in nickel thin film/piezoelectric actuator hybrid structures. To obtain a consistent picture of the connection between magnetic microstructure and magnetoresistance, we correlate simultaneously measured spatially resolved magneto-optical Kerr effect imaging and integral magnetotransport measurements at room temperature. Our results show that the magnetization predominantly reorients by coherent rotation as a function of the voltage applied to the hybrid, except for a narrow region around the coercive field for which the magnetization reorientation evolves via domain effects. This demonstrates that both magnetic-field and strain-driven magnetization reversal can be modeled in terms of a macrospin model.     

First-principles study of structural,electronic, linear and nonlinear optical properties of Ga<Subscript>2</Subscript>PSb ternary chalcopyrite

Epitaxial magnetic oxide films can be reversibly strained on piezoelectric monocrystalline substrates of Pb(Mg_1/3Nb_2/3)_0.72Ti_0.28O₃(PMN-PT). The magnetic film/piezoelectric substrate sample that undergoes well-defined biaxial, nearly linear strains exceeding 0.1% provides a model system for the inspection of strain-dependent magnetic properties which are exploited in many two-phase magnetoelectric multiferroics. We review the properties of the applied pseudocubic PMN-PT(001) substrates, and summarize results for the strain-dependent magnetization of ferromagnetic manganites (La, A)MnO₃ (A = Sr or Ca).     

MOCVD growth, structure and magnetic properties of Fe films grown on GaAs (001) substrates

Thin iron films have been grown on (001) GaAs substrates by low pressure metal organic chemical vapor deposition (LP-MOCVD) at different temperatures with the pressure of 150 Torr. X-ray diffraction (XRD) analysis showed that all films have only one strong diffraction peak (110). The surface of Fe film became smooth with increasing the growth temperature. Magnetization measurements showed that the Fe films grown at different temperatures were ferromagnetic with easy axis parallel to the film surface and hard axis perpendicular to the substrates. The field dependence of magnetization along two axes showed a remarkable difference, implying that the samples have strong magnetic anisotropy. Furthermore, when the applied magnetic field is perpendicular to the Fe surface, a sharp jump in the hysteresis loop could be observed, followed by a broad shoulder, which is related to the interface effect, the existence of carbon and the formation of 180^°/90^° magnetic domains.     

Magnetic excitations in ferromagnetic semiconductors

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors.     

Influence of the thickness on structural,magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

We have studied the effect of thickness on the structural, magnetic and electrical properties of La_0.7Ca_0.3MnO₃ thin films prepared by pulsed laser deposition method using X-ray diffraction, electrical transport, magneto-transport and dc magnetization. X-ray diffraction pattern reflects that all films have c-axis epitaxial growth on LaAlO₃ substrate. The decrease in out-of-plane cell parameter specifies a progressive relaxation of in the plane compressive strain as the film thickness is increases. From the dc magnetization measurements, it is observed that ferromagnetic to paramagnetic transition temperature increases with increase in the film thickness. Magneto-resistance and temperature coefficient of resistance increases with film thickness and have maximum value near its metal to insulator transition temperature.     

Electric-field-induced in-plane effective 90° magnetization rotation in Co_2FeAl/PMN-PT structure

The in-plane effective 90° magnetization rotation of Co_2 Fe Al thin film grown on PMN-PT substrate induced by the electric field is investigated at room temperature. The magnetic hysteresis loops under different positive and negative electric fields are obtained, which reveals remanent magnetization can be mediated by the electric field. Moreover, under positive electric fields, the obvious 90° magnetization rotation can be observed, while remanent magnetization is nearly unchanged under negative electric fields. The result is consistent with the electric field dependence of effective magnetic field,which can be attributed to the piezostrain effect in Co_2 Fe Al/PMN-PT structure. In addition, the piezostrain-mediated 90° magnetization rotation can be demonstrated by the result of resonance field changing with electric field in the measurement of ferromagnetic resonance, which is promising for the design of future multiferroic devices.     

Structural and magnetic properties of Cr and Mn doped InN

We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior.     

Microscopic field in nanocrystalline ferromagnetic metal films and the opportunity for studying it by the μSR method

The relation of the microscopic (local) field in nanocrystalline ferromagnetic metal films to macroscopic characteristics (the external magnetic field, average magnetization, saturation magnetization) is determined for the case where a nanocrystalline ferromagnetic film consists of crystallographically ordered grains separated by disordered regions and where the dimensions of grains along a normal to the film plane are much smaller than those in the film plane. In the case of a strong external field (? ? M), the magnetization direction is determined in grains in the form of oblate ellipsoids for metals with uniaxial or cubic magnetocrystalline anisotropy. Expressions are derived for the spin polarization of an ensemble of rapidly diffusing and nondiffusing muons in nanocrystalline ferromagnetic films. It is shown that experiments with “slow” positive muons make it possible to measure all parameters of such structures and to obtain important information for studying phase transition physics.     

The ALICE experiment at the LHC

A free-energy function is constructed, which couples strain and magnetic moments in ferromagnetic shape memory alloys. The associated Gibbs function is used to calculate time-dependent transition probabilities between martensite variants in a magnetic field under applied stress. By keeping track of the variant fractions, the evolution of strain and magnetization is determined. The simulation model is built in a finite element program for structural analysis, in order to simulate magnetic field-dependent strain and magnetization characteristics of a test actuator. The influence of material parameters and sample geometry is discussed.     

Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni₈₀Fe₂₀/Cu/Fe₅₀Co₅₀/IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices.     

Magnetische grenzflächen-anisotropie von amorphem Fe in kontakt mit nichtmagnetischen metallen

The magnetic properties of very thin ferromagnetic Fe films (1–10 atomic layers) in contact with nonmagnetic amorphous metals are investigated. Apart from the demagnetization energy, which supports a magnetization in the plane of the film, an energy of magnetic anisotropy occurs in the interlayer, which has the tendency to orient the magnetization perpendicular to the surface. The anomalous Hall effect of the ferromagnetic films is used to investigate their magnetic properties. From the measurements, we get the applied magnetic field B_s, which is necessary to orient the magnetization perpendicular to the film surface. In addition to a constant term, B_s is proportional to 1/d, which is typical of surface effects and yields the energy of the interface anisotropy. The value of this energy is strongly dependent on the nonmagnetic metal and is smaller for the system Pb/Fe than for Sn/Fe. Furthermore, the experimental results show no drastic reduction of the atomic magnetic moment in the surface layer.     

Magnetic interface-anisotropy of amorphous iron in contact with nonmagnetic metals

The magnetic properties of very thin ferromagnetic Fe films (1–10 atomic layers) in contact with nonmagnetic amorphous metals are investigated. Apart from the demagnetization energy, which supports a magnetization in the film plane, an energy of magnetic anisotropy occurs in the interlayer, which has the tendency to turn the magnetization perpendicular to the surface. The anomalous Hall effect of the ferromagnetic films is used to investigate their magnetic properties. From the measurements we get the applied magnetic fieldB _s , which is necessary to turn the magnetization perpendicular to the film surface.B _s is, besides a constant term, proportional to 1/d, which is typical of surface effects and yields the energy of the interface anisotropy. The value of this energy is strongly dependent on the nonmagnetic metal and is smaller for the system Pb/Fe than for Sn/Fe. Furthermore, the experimental results show no drastic reduction of the atomic magnetic moment in the surface layer.     

Switching curves of magnetically coupled ferro-ferromagnetic double layer films

The switching curves are studied of a double layer film consisting of two uniaxial ferromagnetic thin films. In this coupled film system the magnetization state is investigated assuming the model of uniform rotation. The coupling between the films is described by a magnetic interface cosine coupling. Numerical results are given for the case of ferromagnetic films with different magnetic parameters coupled together by a ferromagnetic interface cosine coupling.The author wishes to thank Dr. H. Gengnagel and Dr. E. Steinbeiss for their valuable discussions.     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

Instantons and solitons in a monolayer film of ferromagnetic grains with biaxial anisotropy

We investigate domain wall and domain structure in a monolyer film consisting of ferromagnetic grains with biaxial anisotropy, which are seen to be the static versions of instanton and soliton, respectively. The equation of motion of the magnetization vector is reduced to the (1 + 2)-dimensional sine-Gordon field equation in strong anisotropy limit and the instanton and soliton configurations are obtained analytically. Various new domain structures in the ferromagnetic film are found.     

Fabrication of ferromagnetic (Ga,Mn)As by ion irradiation

Using Mn⁺ implantation following ion beam-induced epitaxial crystallization (IBIEC) annealing, high Curie temperature ferromagnetic (Ga,Mn)As thin film was fabricated. The crystalline quality of the Mn⁺ implanted layer was identified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). A clear ferromagnetic transition at T_c 253 K was observed by magnetization vs. temperature measurement. We infer that IBIEC treatment is a useful method not only for the low-temperature annealing of (Ga,Mn)As thin films but also for other dilute magnetic semiconductor (DMS) samples.     

Evolution of the domain structure of thin magnetic films during ideal magnetization

Thin uniaxial ferromagnetic films with the easy-magnetization axis oriented perpendicularly to the film plane are considered. The process of ideal magnetization of films with a twisted unipolar periodic domain structure is investigated by computer simulation. It is shown that during film magnetization the degree of twistedness of domain walls decreases and the magnetic structure becomes domainless.