New Examples for the Unexpected Stability of the 10π‐Electron Hückel Arene [Si6]10–

The compounds Ba₄Ag₂Si₆, Eu₄Ag₂Si₆, and Ca₄Ag₂Si₆, prepared from the elements at 1273 K (the components in inner corundum crucibles are enclosed in sealed quartz ampoules), are brittle semiconductors with silvery luster. They react slowly with acids liberating hydrogen. Ba₄Ag₂[Si₆] and Eu₄Ag₂[Si₆] crystallize like Ba₄Li₂[Si₆] (space group Fddd (No. 70); a = 8.613 Å, b = 14.927 Å, c = 19.639 Å, and a = 8.420 Å, b = 14.585 Å, c = 17.864 Å, respectively), whereas Ca₄Ag₂[Si₆] represents a new structure type (space group Fmmm (No. 69); a = 8.315 Å, b = 14.391 Å, c = 8.646 Å). The three compounds are Zintl phases with the formal charges M²⁺, Ag⁺ and [Si₆]^10–. The mean bond lengths d(Si–Si) = 2.335–2.381 Å in the 10π‐Hückel arene [Si₆]^10– as well as d(Ag–Si) = 2.464–2.595 Å vary with the size of the M²⁺ cations. The chemical bonding was analyzed in terms of the Electron Localization Function (ELF) and compared with the bonding in related systems (Ce₄Co₂Si₆).     

Ba6Mg10.8Li1.2Si12, die erste Verbindung mit drei verschiedenen Zintl‐Anionen

Ba₆Mg_10.8Li_1.2Si₁₂, the First Compound Containing Three Different Zintl Anions A novel quaternary Zintl phase of silicon is presented. The crystal structure of Ba₆Mg_10.8Li_1.2Si₁₂ (Pnma, a = 22.257(5), b = 4.5804(9), c = 14.007(3) Å) is the first example of a silicide with isolated silicon atoms, Si₂ dumb‐bells and Si₃ chains thus with three different Zintl anions within one structure. Accompanying quantumchemical investigations in the Extended Hückel framework give detailed insights in the present bond situation and support general trends found in unusual Zintl phases.     

Struktur und Eigenschaften von Ba2Mg3Si4, einer Zintl-Phase mit planaren Si6-Einheiten

Structure and Properties of Ba₂Mg₃Si₄, a Zintl Phase with Planar Si₆ Units Within the scope of the investigations on the phase system Ba/Mg/Si a new ternary Zintl phase of the composition Ba₂Mg₃Si₄ was found and structurally characterized. The silicon substructure is built up of Si₂ pairs and a new type of Zintl anion, a planar Si₆ chain. Temperature dependent measurements of the electric conductivity and the magnetic susceptibility show a metallic behavior. Accompanying quantumchemical investigations on the base of the LMTO-ASA method confirm these results and allow an insight in the present bond situation.     

The Zintl Phase Eu2Si

The Zintl phase Eu₂Si was synthesized from elemental europium and silicon in a sealed tantalum tube in a high‐frequency furnace at 1270 K and subsequent annealing at 970 K. Investigation of the sample by X‐ray powder and single crystal techniques revealed: Co₂Si (anti‐PbCl₂) type, space group Pnma, a = 783.0(1), b = 504.71(9), c = 937.8(1) pm, wR2 = 0.1193, 459 F² values and 20 variables. The structure contains two europium and one silicon site. ¹⁵¹Eu Mössbauer spectroscopic data show a single signal at an isomer shift of −9.63(3) mm/s, compatible with divalent europium. Within the Zintl concept electron counting can be written as (2Eu²⁺)⁴⁺Si⁴⁻, in agreement with the absence of Si‐Si bonding. Each silicon atom has nine europium neighbors in the form of a tri‐capped trigonal prism. The silicon coordinations of the Zintl phases Eu₂Si, Eu₅Si₃, EuSi, and EuSi₂ are compared.     

Tt‐Tt (Tt = Si,Ge) Dumb‐Bell Structures at Different Valence Electron Concentrations: Ln2MgSi2 (Ln = La,Ce), Yb2Li0.5Ge2, and Yb1.75Mg0.75Si2

The isostructural compounds Yb₂MgSi₂, La_2.05Mg_0.95Si₂, and Ce_2.05Mg_0.95Si₂, as well as Yb₂Li_0.5Ge₂ and Yb_1.75Mg_0.75Si₂, respectively, were synthesized from stoichiometric mixtures of the corresponding elements in sealed Nb‐ ampoules under argon atmosphere. The structures were determined by single crystal X‐ray diffraction: Yb₂MgSi₂ (P4/mbm (No. 127), a = 7.056(1), c = 4.130(1) ų, Z = 2), La_2.05Mg_0.95Si₂ (P4/mbm, a = 7.544(1), c = 4.464(1) ų, Z = 2), and Ce_2.05Mg_0.95Si₂ (P4/mbm, a = 7.425(1), c = 4.370(1) ų, Z = 2), Yb₂Li_0.5Ge₂ (Pnma (No. 62), a = 7.0601(6), b = 14.628(1), c = 7.6160(7) Å, V = 786.5ų, Z = 4), Yb_1.75Mg_0.75Si₂ (Pnma, a = 6.9796(1), b = 14.4009(1), c = 7.5357(1) Å, V = 757.43(2) ų, Z = 4). All compounds contain exclusively Tt‐Tt dumb‐bells (Tt = Si, Ge). The Si‐Si Zintl anions exhibit only very small variations of bond lengths which seem to be more due to cation matrix effects than to effective bond orders.     

Kann man die Arten von Zintl-Anionen steuern?? Variationen über das Thema Si2− im System Sr/Mg/Si

Can One Design Zintl Anions? Contributions from the System Sr/Mg/Si to the Topic Si^2? Two novel ternary silicides, SrMgSi₂ (Pnma, Z = 8, a = 14.374, b = 4.4512, c = 11.398 Å) and Sr₁₁Mg₂Si₁₀, (C2/m, Z = 2, a = 19.744, b = 4.754, c = 14.84 Å, β = 112.47°) have been established in the ternary system Sr/Mg/Si. The compounds are synthezised from the elements under inert conditions. Single crystal structure determinations yield the novel Zintl anions, [Si(Si₃)^8?] a branched chain, and the zig-zag chain piece [Si₈]^18?, both of which exhibit significant correlations and differences with respect to the linear chains in [Si^?] in the binary MSi phases (M = Ca, Sr, Ba) which have been reinvestigated in this context. The variations of the Zintl anions can be traced back mainly to the differences of Mg? Si and Sr? Si interactions. From these findings a functional relationship between Mg content and the formation of endgroup members in Zintl anions of silicon is anticipated.     

Charged Si9 Clusters in Neat Solids and the Detection of [H2Si9]2− in Solution: A Combined NMR,Raman, Mass Spectrometric,and Quantum Chemical Investigation

Polyanionic silicon clusters are provided by the Zintl phases K₄Si₄, comprising [Si₄]⁴⁻ units, and K₁₂Si₁₇, consisting of [Si₄]⁴⁻ and [Si₉]⁴⁻ clusters. A combination of solid‐state MAS‐NMR, solution NMR, and Raman spectroscopy, electrospray ionization mass spectrometry, and quantum‐chemical investigations was used to investigate four‐ and nine‐atomic silicon Zintl clusters in neat solids and solution. The results were compared to ²⁹Si isotope‐enriched samples. ²⁹Si‐MAS NMR and Raman shifts of the phase‐pure solids K₄Si₄ and K₁₂Si₁₇ were interpreted by quantum‐chemical calculations. Extraction of [Si₉]⁴⁻ clusters from K₁₂Si₁₇ with liquid ammonia/222crypt and their transfer to pyridine yields in a red solid containing Si₉ clusters. This compound was characterized by elemental and EDX analyses and ²⁹Si‐MAS NMR and Raman spectroscopy. Charged Si₉ clusters were detected by ²⁹Si NMR in solution. ²⁹Si and ¹H NMR spectra reveal the presence of the [H₂Si₉]²⁻ cluster anion in solution.     

Charged Si9 Clusters in Neat Solids and the Detection of [H2Si9]2− in Solution: A Combined NMR,Raman, Mass Spectrometric,and Quantum Chemical Investigation

Polyanionic silicon clusters are provided by the Zintl phases K₄Si₄, comprising [Si₄]⁴⁻ units, and K₁₂Si₁₇, consisting of [Si₄]⁴⁻ and [Si₉]⁴⁻ clusters. A combination of solid‐state MAS‐NMR, solution NMR, and Raman spectroscopy, electrospray ionization mass spectrometry, and quantum‐chemical investigations was used to investigate four‐ and nine‐atomic silicon Zintl clusters in neat solids and solution. The results were compared to ²⁹Si isotope‐enriched samples. ²⁹Si‐MAS NMR and Raman shifts of the phase‐pure solids K₄Si₄ and K₁₂Si₁₇ were interpreted by quantum‐chemical calculations. Extraction of [Si₉]⁴⁻ clusters from K₁₂Si₁₇ with liquid ammonia/222crypt and their transfer to pyridine yields in a red solid containing Si₉ clusters. This compound was characterized by elemental and EDX analyses and ²⁹Si‐MAS NMR and Raman spectroscopy. Charged Si₉ clusters were detected by ²⁹Si NMR in solution. ²⁹Si and ¹H NMR spectra reveal the presence of the [H₂Si₉]²⁻ cluster anion in solution.     

Tetrabutylammonium Salts of Aluminum(III) and Gallium(III) Phthalocyanine Radical Anions Bonded with Fluoren‐9‐olato− Anions and Indium(III) Phthalocyanine Bromide Radical Anions

Reduction of aluminum(III), gallium(III), and indium(III) phthalocyanine chlorides by sodium fluorenone ketyl in the presence of tetrabutylammonium cations yielded crystalline salts of the type (Bu₄N⁺)₂[M^III(HFl−O⁻)(Pc^.3−)]^.−(Br⁻) ⋅ 1.5 C₆H₄Cl₂ [M=Al ( 1 ), Ga ( 2 ); HFl−O⁻=fluoren‐9‐olato⁻ anion; Pc=phthalocyanine] and (Bu₄N⁺) [In^IIIBr(Pc^.3−)]^.− ⋅ 0.875 C₆H₄Cl₂ ⋅ 0.125 C₆H₁₄ ( 3 ). The salts were found to contain Pc^.3− radical anions with negatively charged phthalocyanine macrocycles, as evidenced by the presence of intense bands of Pc^.3− in the near‐IR region and a noticeable blueshift in both the Q and Soret bands of phthalocyanine. The metal(III) atoms coordinate HFl−O⁻ anions in 1 and 2 with short Al−O and Ga−O bond lengths of 1.749(2) and 1.836(6) Å, respectively. The C−O bonds [1.402(3) and 1.391(11) Å in 1 and 2 , respectively] in the HFl−O⁻ anions are longer than the same bond in the fluorenone ketyl (1.27–1.31 Å). Salts 1 – 3 show effective magnetic moments of 1.72, 1.66, and 1.79 μ_B at 300 K, respectively, owing to the presence of unpaired S= 1/2 spins on Pc^.3−. These spins are coupled antiferromagnetically with Weiss temperatures of −22, −14, and −30 K for 1 – 3 , respectively. Coupling can occur in the corrugated two‐dimensional phthalocyanine layers of 1 and 2 with an exchange interaction of J /k _B=−0.9 and −1.1 K, respectively, and in the π‐stacking {[In^IIIBr(Pc^.3−)]^.−}₂ dimers of 3 with an exchange interaction of J /k _B=−10.8 K. The salts show intense electron paramagnetic resonance (EPR) signals attributed to Pc^.3−. It was found that increasing the size of the central metal atom strongly broadened these EPR signals.     

Synthesis,Crystal Structure,Bonding, and Properties of (Ba6O)(OsN3)2

The new barium nitridoosmate oxide (Ba₆O)(OsN₃)₂ was prepared by reacting elemental barium and osmium (3:1) in nitrogen at 815–830 °C. The crystal structure of (Ba₆O)(OsN₃)₂ as determined by laboratory powder X‐ray diffraction ( , No 148: a=b=8.112(1) Å, c=17.390(1) Å, V=991.0(1) ų, Z=3), consists of sheets of trigonal OsN₃ units and trigonal‐antiprismatic Ba₆O groups, and is structurally related to the “313 nitrides” AE₃MN₃ (AE=Ca, Sr, Ba, M=V–Co, Ga). Density functional calculations, using a hybrid functional, likewise indicate the existence of oxygen in the Ba₆ polyhedra. The oxidation state 4+ of osmium is confirmed, both by the calculations and by XPS measurements. The bonding properties of the OsN₃^5? units are analyzed and compared to the Raman spectrum. The compound is paramagnetic from room temperature down to T=10 K. Between room temperature and 100 K it obeys the Curie–Weiss law (μ=1.68 μ_B). (Ba₆O)(OsN₃)₂ is semiconducting with a good electronic conductivity at room temperature (8.74×10^?2 Ω^?1 cm^?1). Below 142 K the temperature dependence of the conductivity resembles that of a variable‐range hopping mechanism.     

Diferrocenylmercury‐Bridged Diphosphine: A Chiral,Ambiphilic, and Redox‐Active Bidentate Ligand

A diphosphine chelate ligand with a wide and flexible bite angle, a unique stereochemical environment, and redox‐active and ambiphilic character is reported. Initially generated as its HgCl₂ complex by reaction of 1,2‐fc(PPh₂)(SnMe₃) (fc=ferrocenediyl) with HgCl₂ in acetone, treatment with [n‐Bu₄N]CN readily liberates the free chiral bidentate ligand. An intermolecular ClHg−Cl→Hgfc₂ (2.9929(13) Å) interaction that is unprecedented in ambiphilic ligand chemistry is seen in the solid structure of Hg(fcPPh₂)₂⋅HgCl₂ where the bridging mercury atom acts as a σ‐acceptor. Furthermore, a bis‐[Rh(COD)Cl] complex is introduced, which displays relatively short Rh⋅⋅⋅Hg contacts of 3.4765(5) and 3.4013(1) Å. Wiberg indices of 0.12 are determined for these Rh⋅⋅⋅Hg interactions and an AIM analysis reveals bond paths with an electron density ρ(r) of 1.2×10⁻² and 1.4×10⁻² e/a₀³ at the bond critical points.     

A Naphthalene-Like Si1010− Unit in the Novel ∞2[Si2030−] Planar Anion of Sr13Mg2Si20

Two interpenetrating ² _∞ [Si ₂₀ ³⁰⁻ ] polyanions with naphthalene-like Si₁₀¹⁰⁻ building blocks (see picture) characterize the“nonclassical” Zintl phase Sr₁₃Mg₂Si₂₀, which is formed from the elements at 1230–1240 K. The ecliptical stacking of the Si₁₀¹⁰⁻ units leads to one-dimensional conductivity along the stacking direction.     

Diverse Reactivity of bis(Silylene) and bis(Germylene) [LE−EL (E=Si and Ge: L=PhC(NtBu)2)] in the Oxidative Activation of C−F Bond: Si−Si Bond is Retained While the Ge−Ge Bond Is Cleaved

Herein we report the reactions of 3,4,5,6-tetrafluoroterephthalonitrile ( 1 ) with bis(silylene) and bis(germylene) LE−EL [E=Si ( 2 ) and Ge( 3 ): L=PhC(N^tBu)₂)]. The reaction of LSi−SiL (L=PhC(N^tBu)₂) ( 2 ) with two equivalents of 1 resulted in an unprecedented oxidative addition of a C−F bond of 1 leading to disilicon(III) fluoride {L(4-C₈F₃N)FSi−SiF(4-C₈F₃N)L}( 4 ), wherein the Si−Si single bond was retained. In contrast, the reaction of LGe−GeL (L=PhC(N^tBu)₂) ( 3 ) with one equivalent of 1 resulted in the oxidative cleavage of Ge−Ge bond leading to L(4-C₈F₃N₂)Ge ( 5 ) and LGeF ( 6 ). All three compounds ( 4 – 6 ) were characterized by NMR spectroscopy, EI-MS spectrometry, and elemental analysis. X-ray single-crystal structure determination of compound 4 unequivocally established that the Si^III−Si^III bond remains uncleaved.     

Room-Temperature Solid-State Transformation of Na4SnS4 ⋅ 14H2O into Na4Sn2S6 ⋅ 5H2O: An Unusual Epitaxial Reaction Including Bond Formation,Mass Transport,and Ionic Conductivity

A highly unusual solid-state epitaxy-induced phase transformation of Na₄SnS₄ ⋅ 14H₂O ( I ) into Na₄Sn₂S₆ ⋅ 5H₂O ( II ) occurs at room temperature. Ab initio molecular dynamics (AIMD) simulations indicate an internal acid-base reaction to form [SnS₃SH]³⁻ which condensates to [Sn₂S₆]⁴⁻. The reaction involves a complex sequence of O−H bond cleavage, S²⁻ protonation, Sn−S bond formation and diffusion of various species while preserving the crystal morphology. In situ Raman and IR spectroscopy evidence the formation of [Sn₂S₆]⁴⁻. DFT calculations allowed assignment of all bands appearing during the transformation. X-ray diffraction and in situ ¹H NMR demonstrate a transformation within several days and yield a reaction turnover of ≈0.38 %/h. AIMD and experimental ionic conductivity data closely follow a Vogel-Fulcher-Tammann type T dependence with D(Na)=6×10⁻¹⁴ m² s⁻¹ at T=300 K with values increasing by three orders of magnitude from −20 to +25 °C.     

Die neuen Schichtsilicate Ba3Si6O9N4 und Eu3Si6O9N4

The New Layer‐Silicates Ba₃Si₆O₉N₄ and Eu₃Si₆O₉N₄ The new oxonitridosilicate Ba₃Si₆O₉N₄ has been synthesized in a radiofrequency furnace starting from BaCO₃, amorphous SiO₂ and Si₃N₄. The reaction temperature was at about 1370 °C. The structure of the colorless compound has been determined by single‐crystal X‐ray diffraction analysis (Ba₃Si₆O₉N₄, space group P3 (no. 143), a = 724.9(1) pm, c = 678.4(2) pm, V = 308.69(9)· 10⁶ pm³, Z = 1, R1 = 0.0309, 1312 independent reflections, 68 refined parameters). The compound is built up of corner sharing SiO₂N₂ tetrahedra forming corrugated layers between which the Ba²⁺ ions are located. Substitution of barium by europium leads to the isotypic compound Eu₃Si₆O₉N₄. Because no single‐crystals could be obtained, a Rietveld refinement of the powder diffractogram was conducted for the structure refinement (Eu₃Si₆O₉N₄, space group P3 (no. 143), a = 711.49(1) pm, c = 656.64(2) pm, V = 287.866(8) ·10⁶ pm³, R_p = 0.0379, R_F² = 0.0638). The ²⁹Si MAS‐NMR spectrum of Ba₃Si₆O₉N₄ shows two resonances at ?64.1 and ?66.0 ppm confirming two different crystallographic Si sites.     

K and Ba distribution in the structures of the clathrate compounds KxBa16−x(Ga,Sn)136 (x = 0.8, 4.4, and 12.9) and KxBa8−x(Ga,Sn)46 (x = 0.3)

Studies of the K–Ba–Ga–Sn system produced the clathrate compounds K_0.8(2)Ba_15.2(2)Ga_31.0(5)Sn_105.0(5) [a = 17.0178 (4) Å], K_4.3(3)Ba_11.7(3)Ga_27.4(4)Sn_108.6(4) [a = 17.0709 (6) Å] and K_12.9(2)Ba_3.1(2)Ga_19.5(4)Sn_116.5(4) [a = 17.1946 (8) Å], with the type‐II structure (cubic, space group Fdm), and K_7.7(1)Ba_0.3(1)Ga_8.3(4)Sn_37.7(4) [a = 11.9447 (4) Å], with the type‐I structure (cubic, space group Pmn). For the type‐II structures, only the smaller (Ga,Sn)₂₄ pentagonal dodecahedral cages are filled, while the (Ga,Sn)₂₈ hexakaidecahedral cages remain empty. The unit‐cell volume is directly correlated with the K:Ba ratio, since an increasing amount of monovalent K occupying the cages causes a decreasing substitution of the smaller Ga in the framework. All three formulae have an electron count that is in good agreement with the Zintl–Klemm rules. For the type‐I compound, all framework sites are occupied by a mixture of Ga and Sn atoms, with Ga showing a preference for Wyckoff site 6c. The (Ga,Sn)₂₀ pentagonal dodecahedral cages are occupied by statistically disordered K and Ba atoms, while the (Ga,Sn)₂₄ tetrakaidecahedral cages encapsulate only K atoms. Large anisotropic displacement parameters for K in the latter cages suggest an off‐centering of the guest atoms.     

In Silico Partial N2 to NH3 Conversion with a Light Atom Molecule

N₂ can be stepwise converted in silico into one molecule NH₃ and a secondary amide with a bond activator molecule consisting only of light main group elements. The proposed N₂-activating pincer-related compound carries a silyl ion (Si⁽⁺⁾) center as well as three Lewis acidic (−BF₂) and three Lewis basic (−PMe₂) sites, providing an efficient binding pocket for gaseous N₂ within the framework of intramolecular frustrated Lewis pairs (FLP). In addition, it exhibits supportive secondary P−B and F⋅⋅⋅B contacts, which stabilize the structure. In the PSi⁽⁺⁾−N−N−BP environment the N≡N triple bond is extended from 1.09 Å to remarkable 1.43 Å, resembling a N−N single bond. The strongly activated N−N-fragment is prone to subsequent hydride addition and protonation steps, resulting in the energy efficient transfer of two hydrogen equivalents. The next hydride added causes the release of one molecule NH₃, but leaves the ligand system as poisoned R₃Si⁽⁺⁾−NH₂−PMe₂ or R₃Si⁽⁺⁾−NH₃ dead-end states behind. The study indicates that approximately tetrahedral constrained SiBP₂-pockets are capable to activate N₂, whereas the acid-rich SiB₃- and SiB₂P-pocktes, as well as the base-rich SiP₃-pockets fail, hinting towards the high relevance of the acid-base proportion and relative orientation. The electronic structure of the N₂-activated state is compared to the corresponding state of a recently published peri-substituted bond activator molecule featuring a PSi⁽⁺⁾−N−N−Si⁽⁺⁾P site (S. Mebs, J. Beckmann, Physical Chemistry Chemical Physics 2022 , 24, 20953–20967).     

The influence of partial substitution of phosphorus by arsenic in monoclinic CsH2PO4. X-ray single crystal,vibrational and phase transitions in the mixed CsH2(PO4)0.72(AsO4)0.28

Partial substitution of P by As, leading to the solid solution CsH₂(PO₄)_1−x(AsO₄)_x, with x=0.28 (abbreviated as CDAP) has been shown. The structural characteristics of the crystals were analyzed by means of X-ray diffraction, which revealed that the new title compound is nearly isomorphous with the monoclinic phase of CsH₂PO₄ (CDP). The structure was solved from 796 independent reflections with R₁=0.0292 and Rw₂=0.0702, refined with 59 parameters. The following results have been obtained: space group P2₁, a=4.9250(4) Å, b=6.4370(3) Å, c=7.9280(6) Å, β=107.316(3)°, V=239.94(3) Å³, Z=2 and ρ_cal=3.349 g cm⁻³. The hydrogen bonds are clearly distinguished in the electron density maps which display distributions corresponding to order of protons. The shorter bond (2.452(4) Å), links the phosphate–arsenate groups into chains running along the b-axis and the longer bond (2.531(3) Å), crosslinks the chains to form (001) layers. The Raman and infrared spectra of CDAP recorded at room temperature in the frequency ranges 15–1200 cm⁻¹ and 400–4000 cm⁻¹, respectively, confirm the presence of PO³⁻₄ and AsO³⁻₄ groups in the crystal. Differential scanning calorimetry traces show three phase transitions at 333, 449 and 490 K in this material, which are characterized by X-ray powder diffraction at high temperature.     

ThSi2 Type Ytterbium Disilicide and its Analogues YbTxSi2–x (T = Cr,Fe, Co)

YbSi₂ and the derivatives YbT_xSi_2–x (T = Cr, Fe, Co) crystallizing in the α‐ThSi₂ structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single‐crystal X‐ray diffraction, I4₁/amd space group and the lattice constants are: a = 3.9868(6) Å and c = 13.541(3) Å for YbSi₂, a = 4.0123(6) Å and c = 13.542(3) Å for YbCr_0.27Si_1.73, a = 4.0142(6) Å and c = 13.830(3) Å for YbCr_0.71Si_1.29, a = 4.0080(6) Å and c = 13.751(3) Å for YbFe_0.34Si_1.66, and a = 4.0036(6) Å, c = 13.707(3) Å for YbCo_0.21Si_1.79. YbSi₂ and YbT_xSi_2–x compounds are polar intermetallics with three‐dimensional Si and M (T+Si) polyanion sub‐networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially.     

The Binary Silicides Eu5Si3 and Yb3Si5 – Synthesis,Crystal Structure,and Chemical Bonding

The binary silicides Eu₅Si₃ and Yb₃Si₅ were prepared from the elements in sealed tantalum tubes and their crystal structures were determined from single crystal X-ray data: I4/mcm, a = 791.88(7) pm, c = 1532.2(2) pm, Z = 4, wR2 = 0.0545, 600 F² values, 16 variables for Eu₅Si₃ (Cr₅B₃-type) and P62m, a = 650.8(2) pm, c = 409.2(1) pm, Z = 1, wR2 = 0.0427, 375 F² values, 12 variables for Yb₃Si₅ (Th₃Pd₅ type). The new silicide Eu₅Si₃ contains isolated silicon atoms and silicon pairs with a Si–Si distance of 242.4 pm. This silicide may be described as a Zintl phase with the formula [5 Eu²⁺]¹⁰⁺[Si]^4–[Si₂]^6–. The silicon atoms in Yb₃Si₅ form a two-dimensional planar network with two-connected and three-connected silicon atoms. According to the Zintl-Klemm concept the formula of homogeneous mixed-valent Yb₃Si₅ may to a first approximation be written as [3 Yb]⁸⁺[2 Si^–]^2–[3 Si^2–]^6–. Magnetic susceptibility investigations of Eu₅Si₃ show Curie-Weiss behaviour above 100 K with a magnetic moment of 7.85(5) μ_B which is close to the free ion value of 7.94 μ_B for Eu²⁺. Chemical bonding in Eu₅Si₃ and Yb₃Si₅ was investigated by semi-empirical band structure calculations using an extended Hückel hamiltonian. The strongest bonding interactions are found for the Si–Si contacts followed by Eu–Si and Yb–Si, respectively. The main bonding characteristics in Eu₅Si₃ are antibonding Si1₂-π* and bonding Eu–Si1 states at the Fermi level. The same holds true for the silicon polyanion in Yb₃Si₅.