Low‐temperature growth of high quality AlN films on carbon face 6H‐SiC

AlN films have been grown on atomically flat carbon face 6H‐SiC (000 ) substrates by pulsed laser deposition and their structural properties have been investigated. In‐situ reflection high‐energy electron diffraction observations have revealed that growth of AlN at 710 °C proceeds in a Stranski–Krastanov mode, while typical layer‐by‐layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X‐ray rocking curves for 0004 and 10 2 diffractions of the RT‐grown AlN film are 0.05° and 0.07°, respectively. X‐ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Stress‐induced Curie temperature increase in the Fe64Ni36 invar alloy

Structural and magnetic changes on invar Fe₆₄Ni₃₆ alloy (T_C = 500 K) produced by mechanical milling followed by heating up to 1073 K, were investigated by neutron diffraction, magnetization measurements, X‐ray diffraction under high pressures and X‐ray absorption at both Fe and Ni K‐edges. We argue that the strain induced in the Fe₆₄Ni₃₆ material after this treatment mainly affects the Fe sites due to the magnetovolume coupling, the most notorious feature being the increase of the Curie temperature (ΔT_C = 70 K). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates

The authors have grown high‐quality m ‐plane In_0.36Ga_0.64N (1 00) films on ZnO (1 00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1 00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In_0.36Ga_0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Epitaxy of m ‐plane ZnO on (112) LaAlO3 substrate

Heteroepitaxial growth of non‐polar m ‐plane (10 0) ZnO has been demonstrated on (112) LaAlO₃ single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron diffraction, and cross‐sectional transmission electron microscopy with selected‐area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 0)_ZnO ∥ (112)_LAO, (11 0)_ZnO ∥ ( 1)_LAO and [0001]_ZnO ∥ [ 10]_LAO. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In‐situ dispersion of ZrO2 nano‐particles coated with pentacene

Stable suspensions of pentacene functionalised ZrO₂ nano‐particles were synthesised using a microwave plasma process. The particles were dispersed in‐situ in ethylene glycol. The formation of coated particles with small cores and a well defined size in the range of 3–5 nm was shown by X‐ray diffraction. In difference to resublimed pure pentacene, suspensions of the coated nano‐particles remained stable for weeks, as confirmed by the observation of a small aggregate size in dynamic light scattering. Thin films of the particles on Si based substrates were obtained by drop‐casting. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Early stages of decomposition in Al alloys investigated by X‐ray absorption

We demonstrate the sensitivity of X‐ray absorption fine‐structure (XAFS) measurements to the earliest stages of decomposition in Al alloys, i.e. just a few minutes after quenching. XAFS is one of the few applicable experimental approaches to this regime. Three different AlCu(Mg) samples were investigated by XAFS at the Cu K edge. Significant changes of the XAFS can be detected in the course of the decomposition in these alloys during the first 15 minutes. Actually, these changes correspond to relaxations of the nearest neighbours towards the absorbing Cu atoms. The Fourier transformation of the XAFS spectra thus leads to a pseudo radial distribution function which reflects this relaxation. In addition, XAFS measurements of the S‐phase of AlCuMg are used to decide in favour of the Perlitz and Westgren model for the S‐phase. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐pressure high‐temperature synthesis of Rh2O3‐II‐type In2O3 polymorph

The metastability of the bixbyite‐ and corundum‐type In₂O₃ polymorphs up to 33 GPa (at room temperature) is shown. While compressed (in diamond anvil cells) and laser‐heated, both polymorphs undergo a phase transition to the Rh₂O₃‐II‐type structure (space group Pbcn, No. 60). The direct transition from bixbyite to Rh₂O₃‐II structure has not yet been observed for any other oxide.

     

In‐situ X‐ray diffraction of mechanically milled β‐Al3Mg2 powders

The structure evolution during heating of mechanically milled single‐phase β‐Al₃Mg₂ has been investigated by in‐situ X‐ray diffraction. The nanoscale supersaturated Al(Mg) solid solution formed during milling transforms back to the original β‐Al₃Mg₂ phase through a sequence of phase transformations. At low temperatures, an increasing amount of Mg is rejected from the solid solution with increasing temperature. At intermediate temperatures, the β′‐phase, a hexagonal phase with approximate composition Al₃Mg₂, forms. Finally, at higher temperatures the original β‐Al₃Mg₂ phase is restored, indicating that the formation of the supersaturated solid solution during milling can be reversed by appropriate heat treatment. The phase transformations during heating are gradual and the temperature ranges of stability of the different structure configurations are quite large, all exceeding 50 K. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallization of Fe75Zr25 metallic glass: a two‐step process involving metastable bcc‐Fe and polymorphic transformation

The crystallization process of mechanically alloyed Fe₇₅Zr₂₅ metallic glasses is investigated by means of both thermo‐magnetization and in situ neutron powder thermo‐diffraction experiments in the temperature range 300–1073 K. It was found that the crystallization takes place in a two‐step process, involving firstly the appearance of metastable Fe and Fe₂Zr crystalline phases between 880 K and 980 K, and a subsequent polymorphic transformation into Fe₃Zr above 980 K. These findings explain the anomalous magnetization vs. temperature behaviour on heating–cooling cycles.

     

Layer‐by‐layer fabrication of hierarchical structures in sol–gel templated thin titania films

The fabrication of titania nanostructures with hierarchical order of different structural levels is investigated. The nanostructures are prepared with a diblock‐copolymer assisted sol–gel process. By iterative spin‐coating of the solution onto silicon substrates a thin polymer‐nanocomposite film is deposited and transformed to purely anatase titania nanostructures via calcination. In total, this procedure is repeated three times on top of the substrate. The approach is monitored with grazing incidence small angle X‐ray scattering after each fabrication step. With scanning electron microscopy the final hierarchical structure is imaged. From the characterization different structural levels are clearly identified.

     

Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe_3−xZn_xO₄ (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe₃O₄ thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn²⁺ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe₃O₄ on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T_2g¹, T_2g³, T_2g², and A_1g at 193, 304, 531 and 668 cm⁻¹. It is noticed that the frequency positions of the strongest A_1g mode are at 668.3 cm⁻¹, for all parent Fe₃O₄ thin film shifted at lower wave number as 663.7 for Fe_2.98Zn_0.02O₄ thin film on Si (1 1 1) substrate. The integral intensity at 668 cm⁻¹ increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.     

Structure,morphology, and growth dynamics of perfluoro‐pentacene thin films

We report high structural order in thin films of the organic semiconductor perfluoro‐pentacene (PFP), which is a candidate material for n‐type applications, deposited by vacuum sublimation on oxidized silicon wafers. Bragg reflections up to high order in both specular and grazing incidence geometries and a mosaicity of less than 0.01° demonstrate the well defined structure. The thin film entirely consists of crystallites with a structure close to the bulk phase without any contamination with a second phase. Real‐time X‐ray measurements show that PFP grows in a Stranski–Krastanov growth mode with the first monolayer wetting the substrate before 3d‐growth sets in during growth of the second monolayer. Implications for its use are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase‐change memory

A simple layered phase‐change random access memory (PRAM) cell was fabricated using the In₃Sb₁Te₂ alloy. The overall resistance value of the reset state was about 70 times larger than that of the set state. The resistance difference between the amorphous and crystalline state was fairly well maintained after 10² cycles. Interestingly, the measured current–voltage (I –V) curve showed three obvious steps in the crystalline state. By means of high temperature X‐ray diffractometry (HTXRD) and differential scanning calorimetry (DSC) experiments, we confirmed that the current steps originate from successive structural transformations of the In₃Sb₁Te₂ ternary alloy. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CoPt alloy grown on the WSe2(0 0 0 1) van der Waals surface

The structural and magnetic properties of 3-nm-thick CoPt alloys grown on WSe₂(0 0 0 1) at various temperature are investigated. Deposition at room temperature leads to the formation of a chemically disordered fcc CoPt alloy with [1 1 1] orientation. Growth at elevated temperatures induces L1₀ chemical order starting at 470 K accompanied with an increase in grain size and a change in grain morphology. As a consequence of the [1 1 1] growth direction, the CoPt grains can adopt one of the three possible variants of the L1₀ phase with tetragonal c-axis tilted from the normal to the film plane direction at 54°. The average long-range order parameter is found to be 0.35(±0.05) and does not change with the increase in the deposition temperature from 570 to 730 K. This behavior might be related to Se segregation towards the growing facets and surface disorder effects promoted by a high surface-to-volume ratio. Magnetic studies reveal a superparamagnetic behavior for the films grown at 570 and 730 K in agreement with the film morphology and degree of chemical order. The measurements at 10 K reveal the orientation of the easy axis of the magnetization lying basically in the film plane.     

Evolutions of Crystal Structure, Stoichiometry and Electrochemical Behavior with Co Substitution in LiNi1-yCoyO2 Positive Electrodes

LiNi1-yCoyO2（0.1 ≤ y ≤ 0.4） positive electrode materials are synthesized by a chemical method with stoichiometric acetates of related cations. Their crystal structure, stoichiometry and electrochemical behaviors versus Co concentration are investigated by x-ray diffraction, synchrotron-based x-ray absorption fine structure and galvanostatic cycling ts. The results reveal that the non-stoiehiometric Ni^2＋, Li/Ni cation mixing and polarization are reduced as the amount of Co substitution increases, clearly indicating that the Co element is a medium for easily oxidizing Ni^2＋ to Ni^3＋ during the synthesis process.     

Epitaxial growth of Nd2Hf2O7(1 1 1) thin films on Ge(1 1 1) substrates by pulsed laser deposition

Nd₂Hf₂O₇ (NHO) thin films have been epitaxially grown by pulsed laser deposition (PLD) on Ge(1 1 1) substrates. In situ reflection high-energy electron diffraction (RHEED) evolution of the (1 1 1)-oriented NHO during the deposition has been investigated and shows that the epilayer has a twin-free character with type-B stacking. Interfacial structure of NHO/Ge has been examined by high-resolution transmission electron microscopy (HRTEM). The results indicate a highly crystalline film with a very thin interface, and the orientation relationship between NHO and Ge can be denoted as (1 1 1)_NHO//(1 1 1)_Ge and . Finally, twin-free epitaxial growth of NHO with type-B orientation displays temperature dependence and the type-B epitaxy is favored at high temperature.     

Scattering effects of primary electrons in Co/Cu(1 1 1) measured by Auger; elastic and loss electrons

Electron energy losses were measured as a function of the incidence angle of the primary electron beam for the Co/Cu(1 1 1) adsorption system. The measurements performed for the clean and covered substrate reveal characteristic intensity maxima associated with the close packed rows of atoms, as it was observed in the so called directional Auger and directional elastic peak electron spectroscopy profiles. The incidence angle dependent signal of electron energy losses measured for the clean (Cu 3p_3/2) and covered (Co 3p_3/2) substrate gives the so called directional electron energy loss spectroscopy (DEELS) profiles which contain structural as well as chemical information. The scattering of primaries and different emission processes associated with electron energy losses, Auger, and elastically backscattered electrons are discussed. A change in the h_Cu (Cu M_2,3VV transition) Auger signal recorded during the continuous cobalt deposition shows that the growth mode is not a pure layer by layer type. The complete covering of the substrate by Co at higher coverages is confirmed by the comparison between experimental and theoretical ratios of the Auger peak heights.     

Microstructure,dielectric, and piezoelectric properties of Ce‐modified Na0.5Bi4.5Ti4O15 high temperature piezoceramics

The cerium modified sodium bismuth titanate (Na_0.5Bi_4.5Ti₄O₁₅, NBT) piezoelectric ceramics have been prepared by using the conventional mixed oxide method. X‐ray diffraction analysis revealed that the cerium modified NBT ceramics have a pure four‐layer Aurivillius phase structure. The piezoelectric activity of NBT ceramics was found significantly improved by the modification of cerium. The Curie temperature T_c, and piezoelectric coefficient d₃₃ for the NBT ceramics with 0.50 wt% cerium modification were found to be 655 °C, and 28 pC/N respectively. The Curie temperature gradually decreased from 668 °C to 653 °C with the increase of cerium modification. The dielectric spectroscopy showed that the samples possess stable piezoelectric properties, demonstrating practical potential that for high temperature applications. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Inhomogeneity of a highly efficient InGaN based blue LED studied by three‐dimensional atom probe tomography

The InGaN based multiple quantum well (MQW) structure in a commercially available white light emitting diode (LED) was studied by transmission electron microscopy (TEM) and three‐dimensional atom probe tomography (APT). The average In mole fraction by three‐dimensional (3D) APT was found to be about 18% in the InGaN well which is consistent with the secondary ion mass spectrometry (SIMS) analysis. The In distribution in the InGaN well layer was analyzed by the iso curve mapping of 3D APT and found to be non‐uniform in the InGaN active layer. In clustering or In rich regions in the range of 2–3 nm size were found, in contrast to recent reports. Our results thus indicate that In clustering is essential for high‐brightness InGaN based LEDs. We have also observed a discontinuity in the range of 50–100. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)