Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

Cuprous oxide (Cu₂O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C₅HF₆O₂)₂] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu₂O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)_Cu2O(0 0 0 2)_ZnO; [0 0 1]_Cu2O[1 2¯ 1 0]_ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.     

Growth, thermal and spectral properties of Nd-doped NaGd(MoO4)2 crystal

Nd³⁺-doped NaGd(MoO₄)₂ crystal with dimensions were grown by Czochralski method. Nd³⁺:NaGd(MoO₄)₂ crystal melts at 1182 °C. The hardness of Nd³⁺:NaGd(MoO₄)₂ crystal is 334 VDH. The specific heat is 72.6 cal/mol K. The thermal expansion coefficients are for c-axis and for a-axis, respectively. The absorption cross-sections of Nd³⁺:NaGd(MoO₄)₂ crystal are with a FWHM of 9 nm at the 804 nm for π-polarization and with a FWHM of 17 nm at 807 nm for σ-polarization, respectively. The emission cross-section σ_em are at 1063 nm for π-polarization and 1.94×10^-20 at 1070 nm cm² for σ-polarization, respectively. The fluorescence lifetime τ_f is 93.9 μs at room temperature.     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Crystal growth, characterization and spectroscopic study of europium-doped NaY(PO3)4

Europium-doped NaY(PO₃)₄ single crystals have been synthesized by the flux method with sizes around 1 mm³. The unit cell parameters at room temperature refined by X-ray powder diffraction are a=7.1510(4) Å; b=13.0070(8) Å; c=9.6973(2) Å; β=90.606(3)°, Z=4 with the space group P2₁/n in monoclinic system. The present single crystals have a needle shape, they are elongated along the a crystallographic direction, and their size is in the 500 μm–1 mm range. The linear thermal expansion tensor parameters were determined, being the maximum value along the b direction, 16.1×10⁻⁶ K⁻¹ and the minimum along the a direction being 11.7×10⁻⁶ K⁻¹. The IR vibration modes attributed to the group P–O are consistent with the crystallographic data concerning the chain aspect of the phosphate anion. This material melts incongruently at 1141 K. Intense visible emissions attributed to Eu^{3+ 5}D₀→⁷F₁, ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄, electronic transitions have been observed after pumping at 355 nm at room temperature.     

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

Highly (1 1 0)- and (1 0 0)-oriented LaNiO₃ (LNO) thin films were successfully grown on Si (1 0 0) substrate using radio frequency (RF) magnetron sputtering at room temperature (RT). Effects of oxygen partial pressures on the orientation, film composition, surface morphology, and electrical properties of the films were investigated. The nearly complete (1 0 0) orientation was first achieved with oxygen partial pressure beyond 15% in the sputtering gas. The preferred (1 0 0) orientation of growing films is determined by uniform distribution of Ni³⁺ and La/Ni ratio in the films caused by oxygen during sputtering, as well as the lowest surface energy of the films in the crystalline process. LNO films with controlled orientation have low resistivity of 7.0×10⁻⁶ Ω m which is a good basis for integrating ferroelectric capacitors.     

Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer

GaN thin films have been grown on Si(1 1 1) substrates using an atomic layer deposition (ALD)-grown Al₂O₃ interlayer. This thin Al₂O₃ layer reduces strain in the subsequent GaN layer, leading to lower defect densities and improved material quality compared to GaN thin films grown by the same process on bare Si. XRD ω-scans showed a full width at half maximum (FWHM) of 549 arcsec for GaN grown on bare Si and a FWHM as low as 378 arcsec for GaN grown on Si using the ALD-grown Al₂O₃ interlayer. Raman spectroscopy was used to study the strain in these films in more detail, with the shift of the E₂(high) mode showing a clear dependence of strain on Al₂O₃ interlayer thickness. This dependence of strain on Al₂O₃ thickness was also observed via the redshift of the near bandedge emission in room temperature photoluminescence (RT-PL) spectroscopy. The reduction in strain results in a significant reduction in both crack density and screw dislocation density compared to similar films grown on bare Si. Screw dislocation density of the films grown on Al₂O₃/Si substrates approaches that of typical GaN layers on sapphire. This work shows great promise for the use of oxide interlayers for growth of GaN-based LEDs on Si.     

Elucidation of factors obstructing quality improvement of MOVPE-grown InN

A systematic study of the crystallographic and electrical/optical properties of MOVPE-grown InN was performed, and the factors that restrict the quality of MOVPE InN were elucidated. The quality of grown InN is highly dependant on the thermal decomposition of NH₃ as a nitrogen source. At a lower growth temperature (~550 °C) a shortage of active nitrogen, due to a lower decomposition rate of NH₃, causes the formation of N vacancies in the grown InN. With increasing growth temperature, a more stoichiometric crystal is grown and the electrical/optical properties improve. At temperatures above 600 °C, however, deterioration occurs at the N-face of In-polar InN near the substrate interface. This deterioration results in the formation of a porous layer during high temperature (~650 °C) growth. There are a few evidences that show that the hydrogen produced by NH₃ decomposition causes this degradation. Thus, improving the quality of MOVPE-grown InN by changing the growth temperature can be difficult. However, a short growth time at a high growth rate and a relatively high temperature is one effective way to solve this dilemma, and one can achieve carrier concentrations as low as 4×10¹⁸ cm⁻³ by growth at 650 °C for 30 min.     

Growth and microstructural features of laser ablated LiCoO2 thin films

Thin films of LiCoO₂ were prepared by pulsed laser deposition technique and the properties were studied in relation to the deposition parameters. The films deposited from a sintered composite target (LiCoO₂+Li₂O) in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 300 °C exhibited preferred c-axis (0 0 3) orientation perpendicular to the substrate surface. The AFM data demonstrated that the films are composed of uniform distribution of fine grains with an average grain size of 80 nm. The grain size increased with an increase in substrate temperature. The (0 0 3) orientation decreased with increase in (1 0 4) orientation for the films deposited at higher substrate temperatures (>500 °C) indicating that the films’ growth is parallel to the substrate surface. The composition of the experimental films was analyzed using X-ray photoelectron spectroscopy (XPS). The binding energy peaks of Co(2p_3/2) and Co(2p_1/2) are, respectively, observed at 779.3 and 794.4 eV, which can be attributed to the Co³⁺ bonding state of LiCoO₂. The electrochemical measurements were carried out on Li//LiCoO₂ cells with a lithium metal foil as anode and LiCoO₂ film as cathode of 1.5 cm² active area using a Teflon home-made cell hardware. The Li//LiCoO₂ cells were tested in the potential range 2.6-4.2 V. Specific capacity as high as 205 mC/cm² μm was measured for the film grown at 700 °C. The growth of LiCoO₂ films were studied in relation to the deposition parameters for their effective utilization as cathode materials in solid-state microbattery application.     

Synthesis,X-ray Crystal Structure and Magnetic Study of a μ<Subscript>1,5</Subscript>-dca Bridged Dimeric Copper(II) Complex

Abstract  

The reaction of aqueous solution of copper(II) nitrate trihydrate with methanolic solution of the ligand HL and sodium dicyanamide in aqueous medium results in the formation of a dimeric dicyanamide complex of Cu(II), [Cu₂(L)₂(μ_1,5-dca)₂]·0.5 H₂O (1) [where L = 1-(N-salicylideneamine)-2-(N-ethyl)-aminoethane]. The single crystal X-ray structure reveals that the asymmetric unit of complex 1 consists of two dinuclear units. The complex crystallizes in the monoclinic space group P2₁ with cell parameters, a = 9.8828(19) ?, b = 19.018(4) ?, c = 14.851(3) ?, (°) = 92.979(6) and Z = 4. χ_M T, stays in the 0.94–0.91 cm³ mol⁻¹ K range between 300 and 2 K, which is slightly higher than the spin-only value (χ_M T = 0.75 cm³ mol⁻¹ K) for two uncoupled copper(II) (S = ?) ions assuming g = 2.0, thus indicating that the complex 1 behaves like a simple paramagnet.     

Simulation of metastable zone width and induction time for a seeded aqueous solution of potassium sulfate

The metastable zone width (MSZW, ΔT_m) and induction time (t_ind) were determined with computer simulation for seeded batch crystallization of potassium sulfate from aqueous solution. The MSZW and induction time determined with simulation showed the same behavior as experimental values reported in the literature; log (ΔT_m) increased linearly with an increase in log R (R: cooling rate) and t_ind decreases in proportion to (ΔT)⁻ⁿ (ΔT: supercooling, n: nucleation order in the secondary rate expression of B=k_n(ΔT)ⁿ). The secondary nucleation parameters (k_n and n) were deduced both from the simulated MSZW and induction times by using the previously proposed model [J. Cryst. Growth, 2010, 312, 548–554]. The secondary nucleation rate calculated with the deduced parameters was in agreement with that calculated with the parameters input for simulation.     

Growth and characterization of the nonlinear optical single crystal: l-lysine acetate

Single crystals of l-lysine acetate, an organic nonlinear optical (NLO) material, were grown by the controlled evaporation of its aqueous solutions. Its solubility in aqueous solution was determined gravimetrically. The grown crystals were characterized by the single-crystal diffraction, X-ray powder diffraction, Fourier transform infrared and Raman spectra. The structure analysis reveals that it belongs to the monoclinic crystallographic system, space group P2₁, with cell parameters: a=5.420(2) Å, b=7.542(4) Å, c=12.653(1) Å, β=91.73(1)°, Z=2 and V=516.8 Å³. Experiments of thermogravimetric (TG) and differential thermal analysis (DTA) were carried out to study its thermal properties. The optical behaviours, including transmission spectrum and second harmonic generation (SHG), were investigated to study its linear and NLO properties.     

Investigation of Trimetallic Ligand-Pillared Oxyfluorides: Ag2Cu(pzc)2MOxF6?x (M?=?Mo, Nb, and W)

Abstract  

Three new ligand-pillared hybrid solids, Ag₂Cu(pzc)₂MO _x F_6−x (I, M = Mo, x = 2; II, M = W, x = 2; III, M = Nb, x = 1) (pzc = pyrazine-2-carboxylate) were synthesized via hydrothermal reactions at 150 °C, and their structures were determined by single-crystal X-ray diffraction (P2₁/n (No. 14), Z = 2; a = 7.2302(1), 7.2124(2), 7.2715(2) ?; b = 7.9460(1), 7.9270(2), 7.98436(3) ?; c = 13.9173(2), 13.8959(4), 13.8226(5) ?, for I, II, and III, respectively). All three are isostructural and contain unusual trimetallic (Ag₂CuMO _x F_6−x )²⁺ layers that consist of [Ag₂O₂F₂] _n and [CuMO _x F_6−x ] _n chains that alternate within the layers. Each structure also contains [MO _x F_6−x ]²⁻ octahedra with fully disordered O/F positions and with an inversion center on the M ⁿ⁺ sites, i.e., Mo⁶⁺, W⁶⁺ and Nb⁵⁺. Magnetic susceptibility measurements can be fitted to the Curie–Weiss law with a Curie constant consistent with a single non-interacting Cu(II) (S = ?) site per formula unit. Thermogravimetric analyses indicate that these hybrid compounds are stable up to ~280 °C, with each exhibiting a single weight-loss step beginning at ~300 °C that corresponds to the loss of all pyrazine-2-carboxylate ligands and additional O/F atoms via oxidation of the ligand during its removal. UV–Vis diffuse reflectance measurements show that each exhibits an optical bandgap size of ~2.8 eV, and which electronic-structure calculations show arise from excitations between the Cu(II)-based valence orbitals and the M^5+/6+-based conduction band orbitals.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Syntheses and Crystal Structures of Two CuII Coordination Isomers [Cu(pmt)2] · 4H2O (1) and {[Cu(pmt)2] · 2H2O} n (2)

Abstract  A pair of Cu^II coordination isomers [Cu(pmt)₂] · 4H₂O (1) and {[Cu(pmt)₂] · 2H₂O} _n (2) [Hpmt = 2-(2-pyridylmethylamino) ethanesulfonic acid] have been prepared by reaction of the same proportion CuCl₂ · 2H₂O and Hpmt but with different experimental methods in water–methanol mixed solution, and were characterized by X-ray diffraction, elemental analysis, IR spectrum. X-ray analysis indicates that complex (1) is a mononuclear complex in which two deprotonated pmt ligands coordinate in a facial tridentate arrangement about the Cu^II atom. While complex (2) is a coordination polymer, in which four N atoms of pmt ligands coordinate to one Cu^II atom but its sulfonate O atoms bond to adjacent Cu^II atom. Thus 12-membered rings (–Cu–N–C–C–S–O–)₂ are obtained between two neighbouring Cu^II atoms and they connect one another to form this new polymer. Crystal data: [Cu(pmt)₂] · 4H₂O (1), Mr = 566.10, monoclinic, P2 ₁/c, a = 9.1950(8) ?, b = 11.5093(10) ?, c = 11.2304(10) ?, β  = 105.5550(10)°, Z = 2, V = 1144.96(17) ?³, R ₁  = 0.0407, wR ₂  = 0.1242 [I > 2σ (I)]; {[Cu(pmt)₂] · 2H₂O} _n (2), Mr = 530.07, triclinic, P-1, a = 7.6165(19) ?, b = 8.806(2) ?, c = 9.592(4) ?, α = 104.933(4)°, β = 106.732(4)°, γ = 109.503(3)°, Z = 1, V = 534.2(3) ?³, R ₁ = 0.0470, wR ₂ = 0.1082 [I > 2σ(I)]. Index Abstract  A pair of Cu^II coordination isomers [Cu(pmt)₂] · 4H₂O (1) and {[Cu(pmt)₂] · 2H₂O} _n (2) [Hpmt = 2-(2-pyridylmethylamino) ethanesulfonic acid] have been prepared by reaction of the same proportion CuCl₂ · 2H₂O and Hpmt but with different experimental methods in water–methanol mixed solution.      

Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0 0 0 1) Al₂O₃ substrates at 750 °C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0 0 0 2) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (1 0 1¯ 1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {1 0 1¯ 1}, {1 0 1¯ 3}, and {0 0 0 2} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62° to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness.     

SIMS and Raman characterizations of ZnO:N thin films grown by MOCVD

Nitrogen was incorporated into ZnO films grown by metalorganic chemical vapour deposition (MOCVD) on ZnO substrates using DMZn-TEN, tert-butanol and diallylamine, respectively, as zinc, oxygen and doping sources. The carrier gas was either hydrogen or nitrogen and the partial pressure ratio (R_VI/II) was varied in order to favor the nitrogen incorporation and/or reduce carbon related defects. The ZnO films have been characterized by Micro-Raman scattering and SIMS measurements. SIMS measurements confirm the nitrogen incorporation with concentrations extending from ∼10¹⁹ cm⁻³ to ∼4×10²⁰ cm⁻³. Raman spectra show nitrogen local vibration modes in films grown at low R_VI/II ratio and using H₂ as carrier gas. However, a vibration band attributed to carbon clusters dominates the Raman spectra for films grown with N₂ carrier. The contribution of N complexes was discussed. The strain was calculated for the as-grown and annealed films and it changes from tensile to compressive after annealing.     

Octahedral Copper(II) Carboxylates with 1,10-Phenanthroline: Synthesis,Structural Characterization,DNA-Binding and Anti-Fungal Properties

Two mono-nuclear axially distorted octahedral copper(II) complexes have been prepared and characterized via FT-IR, UV–Visible, elctrochemical, electron spin resonance and powder and single crystal XRD techniques. The complexes consist of a phenanthroline and two carboxylate ligands each bonded in bidentate fashion. Carboxylates are ortho-nitro-2-phenyl acetate (L1) and para-chloro-2-phenyl acetate (L2). Structural study showed that both complexes possess Jahn–Teller distorted octahedral geometry. The bulk purity was assessed from the matching experimental and simulated powder XRD spectra. The results of spectroscopic techniques are consistent with each other. ESR data revealed single electron occupancy of d_x² ? _y² orbital with ²B_1g as ground state typical of tetragonally distorted octahedral geometry. Electrochemical solution study showed diffusion controlled electron transfer processes with diffusion co-efficient values of 10.323?×?10^–8 cm²s^–1 and 0.972?×?10^–8 cm²s^–1 for 1 and 2. Complexes exhibited excellent DNA-binding activity studied via UV–Visible spectroscopy, cyclic voltammetry, florescence spectroscopy and viscometry yielding K_b values of 1.871?×?10⁴ M^–1 (1) and 1.577?×?10⁴ M^–1 (2), 0.38?×?10⁴ M^–1 (1) and 6.39?×?10⁴ M^–1 (2) and 2.1?×?10⁶ M^–1 (1) and 2.0?×?0⁶ M^–1 (2), respectively, for the first three techniques. Complexes possess good antifungal activity against three fungal strains.

Graphic Abstract

     

Growth, refined structural and spectroscopic characteristics of Tm-doped NaGd(WO4)2 single crystals

The details of Tm³⁺-doped NaGd(WO₄)₂ single-crystal growth are discussed, the results of precise investigations of its structural and spectroscopic characteristics, as well as the analysis of cross-relaxation process of Tm³⁺ ions (³H₄→³F₄, ³H₆→³F₄) in this crystal are presented. Based on the Judd–Ofelt theory, three intensity parameters, spontaneous emission probabilities, fluorescence branching ratios and fluorescence quantum efficiency from ³H₄ and ³F₄ levels were refined.     

On the effect of impurities on the metastable zone width of phosphoric acid

The experimental data published in the literature on the metastable zone width, as determined by the maximum supercooling ΔT_max using the conventional polythermal method, of phosphoric acid aqueous solutions containing impurities were analyzed to understand an increase in ΔT_max/T₀ with an increase in saturation temperature T₀ of solute–solvent system and the effect of impurities on the metastable zone width. For the analysis the following relations were used: ln(ΔT_max/T₀)=Φ+βln R (K. Sangwal, Cryst. Res. Technol. 44, 2009, 231−247) and (T₀/ΔT_max)²=F(1−Zln R) (K. Sangwal, Cryst. Growth Des. 9, 2009, 942−950; J. Cryst. Growth 311, 2009, 4050−4061), where Φ, β, F and Z are constants. Analysis of the experimental data revealed that: (1) the parameters Φ and F strongly depend on saturation temperature T₀ and concentration c_i of impurities, but the constants β and Z are independent of T₀ and depend on c_i, (2) the dependence of the parameters Φ and F on T₀ follows an Arrhenius-type equation with activation energy E_sat, (3) the activation energy E_sat for diffusion of ions/molecules of phosphoric acid containing impurity ions is equal to the differential heat of adsorption Q_diff for these impurities, (4) the effectiveness of an impurity is directly connected with the values of their differential heat of adsorption Q_diff; the lower the values of Q_diff for an impurity, the lower is its effectiveness in promoting nucleation, (5) the activation energy E_sat is not related with its heat of dissolution ΔH_s and (6) the increase in ΔT_max/T₀ with an increase in T₀ for phosphoric acid is associated with the activation energy E_sat for diffusion of solute molecules in the solution such that E_sat<0.