Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

DC conductivity and magnetic properties of piezoelectric–piezomagnetic composite system

A series of composites (1−x) (Ni_0.8Zn_0.2Fe₂O₄)+x (BaTiO₃), where x=0%, 20%, 40%, 60%, 80% and 100% BT content, have been prepared by the standard ceramic technique, then sintered at 1200 °C for 8 h. X-ray diffraction analysis shows that the prepared composites consist of two phases, ferrimagnetic and ferroelectric. DC electrical resistivity, thermoelectric power, charge carriers concentration and charge carrier mobility have been studied at different temperatures. It was found that the DC electrical conductivity increases with increasing BT content. The values of the thermoelectric power were positive and negative for the composites indicating that there are two conduction mechanisms, hopping and band conduction, respectively. Using the values of DC electrical conductivity and thermoelectric power, the values of charge carrier mobility and the charge carrier concentration were calculated. Magnetic measurements (hysteresis loop and magnetic permeability) show that the magnetization decreases by increasing BT content. M–H loop of pure Ni_0.6 Zn_0.4 Fe₂O₄ composite indicates that it is paramagnetic at room temperature and that the magnetization is diluted by increasing the BT content in the composite system. The value of magnetoelectric coefficient for the composites decreases by increasing BT content for all the compositions except for 40% BT content, which may be due to the low resistivity of magnetic phase compared with the BT phase that causes a leakage of induced charges on the piezoelectric phase. Since both ferroelectric and magnetic phases preserve their basic properties in the bulk composite, the present BT–NZF composite are potential candidates for applications as pollution sensors and electromagnetic waves.     

About some transport phenomena in Pb1−xCdxS solid solutions

The paper presents some experimental data concerning Hall effect, Seebeck effect and electrical conductivity in bulk samples of Pb_1?xCd_xS solid solutions, in the temperature range 100–360 K. The results are discussed employing a theoretical model with isotropic isoenergetic surfaces and nonpuadratic dispersion law. At x = 0.06 the dominant mechanism for scattering the charge carriers involves optical phonons below Debye temperature and the state density effective mass is not essentially changed relative to pure lead sulphide.     

DC and AC conductivities of (As2S3)100−x(AsSe0.5Te0.5I)x chalcogenide glasses

The DC and AC conductivities of samples from the system (As₂S₃)_100−x(AsSe_0.5Te_0.5I)_x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10⁻²-10⁻¹ eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.     

Magnetic dilution and electronic nature in La0.7Pb0.3Mn1−xZnxO3

We have studied the magnetic dilution and electronic nature of Zn doping on the Mn site in the colossal magnetoresistant material La_0.7Pb_0.3MnO₃ (x≤0.3). Small non-magnetic Zn²⁺ doping tends to separate the system into ferromagnetic clusters to weaken the long-range ferromagnetic order and to reduce the Curie temperature. The spin polarizability of the x=0–0.3 samples is estimated to be 0.97–1.00, indicating that the x=0–0.3 samples are the spin polarized materials in which the conductivity is dominated by single-spin charge carriers. Small doping (x≥0.1) induces the metal–insulator transition and destroys the metallic state with long-range ferromagnetic order.     

Small polaron electron transport in reduced CeO2 single crystals

An investigation of the electrical properties of reduced ceria, CeO_2?x, carried out on single crystals, shows that CeO_2?x provides one of the clearest examples of hopping conduction and the small polaron mechanism. Included are conductivity and Seebeck coefficient measurements at constant x, obtained by sealing off the specimen chamber after reduction. The Seebeck coefficient is independent of temperature, suggesting that the number of carriers is constant. On the other hand, the mobility is activated, with activation energy E_h = 0.40 eV at small x and increasing to 0.52 eV at x = 0.25. The results for the mobility preexponential are consistent with the adiabatic theory of small polaron behavior. A puzzling feature of the Seebeck data as a function of x is that, for low x, the data fit the well-known Heikes formula, without a degeneracy factor of 2 for spin. Nevertheless, these data are interpreted to show that the proportion of mobile carriers decreases as x increases, presumably because of the presence of short-range ordered configurations which immobilize some carriers.     

Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs2 chalcopyrites: A new materials for spintronics

Based on Mn-doped chalcopyrites CdGeAs₂, ZnGeAs₂ and ZnSiAs₂ the new dilute magnetic semiconductors with p-type conductivity were produced. Magnetization, electrical resistivity, magnetoresistance and Hall effect of mentioned compositions were studied. Their curves of temperature dependence of magnetization have the similar form in spite of complicated character, for which the concentration and mobility of the charge carriers are responsible. Thus, for T<15 K, these curves are characteristic for superparamagnetics and for T>15 K for a frustrated ferromagnetics. In compounds with Zn these two states dilute by spinglass-like state. This specific feature is assigned to an attraction of Mn ions occupying neighboring sites and to the competition between the carrier-mediated exchange and superexchange interactions. Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the A^IIB^IVC^V₂:Mn systems.     

Complex impedance spectroscopy studies of (La0.70−xNdx)Sr0.30Mn0.70Cr0.30O3 (x≤0.30) perovskite compounds

The transport properties of Nd-doped perovskite materials (La_0.7−xNd_x)Sr_0.3Mn_0.7Cr_0.3O₃ (x≤0.30) were investigated using impedance spectroscopy techniques over a wide range of temperatures and frequencies. AC conductance analyses indicate that the conduction mechanism is strongly dependent on temperature and frequency. The DC conductance plots can be described using the small polaron hopping (SPH) model, with an apparent reduction of the polaron activation energy below the Curie temperature T_C. Complex impedance plots exhibit semicircular arcs described by an electrical equivalent circuit. Off-centered semicircular impedance plots show that the Nd-doped compounds obey to a non-Debye relaxation process. The conductivity of grains and grain-boundaries has been estimated. The activation energies calculated from the conductance and from time relaxation analyses are comparable. This indicates that the same type of charge carriers is responsible for both the electrical conduction and relaxation phenomena.     

Effect of Zn substitution for Co on the transport properties of Y BaCo4O7

Electrical resistivity and Seebeck coefficients of Y BaCo_4−xZn_xO₇ (x=0.0,0.5,1.0,2.0) were investigated in the temperature range 350-1000 K. It was found that the electrical resistivity and activation energy increase with increasing Zn concentration, while Seebeck coefficients do not increase but decrease when electrical resistivity increases. We explained the increase of electrical resistivity and the drop of Seebeck coefficients for Zn-substituted samples by the decrease of carrier mobility, rather than of carrier concentration. The effect of oxygen absorption and desorption on the electrical resistivity and Seebeck coefficients was also investigated. An abrupt change of transport properties happens at about 650 K for x=0.0 and 0.5 samples measured in oxygen. For x=1.0 and 2.0 samples, however, such change disappears and the transport behavior in oxygen is almost same as that in nitrogen due to the significant suppression of oxygen diffusion caused by the higher Zn concentration in these samples.     

Influence of composition on electrical and optical properties of new chalcogenide thin films from Ge-Se-Tl system

Bulk Ge₂₀Se_80−xTl_x (x ranging from 0 to 15 at%) chalcogenide glasses were prepared by conventional melt quenching technique. Thin films of these compositions were prepared by thermal evaporation, on glass and Si wafer substrates at a base pressure of 10⁻⁶ Torr. X-ray diffraction studies were performed to investigate the structure of the thin films. The absence of any sharp peaks in the X-ray diffractogram confirms that the films are amorphous in nature. The optical constants (absorption coefficient, optical band gap, extinction coefficient and refractive index) of Ge₂₀Se_80−xTl_x thin films are determined by absorption and reflectance measurements in a wavelength range of 400-900 nm. In order to determine the optical gap, the absorption spectra of films with different Tl contents were analyzed. The absorption data revealed the existence of allowed indirect transitions. The optical band gap showed a sharp decrease from 2.06 to 1.79 eV as the Tl content increased from 0% to 15%. It has been found that the values of absorption coefficient and refractive index increase while the extinction coefficient decreases with increase in Tl content in the Ge-Se system. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. DC electrical conductivity of Ge₂₀Se_80−xTl_x thin films was carried out in a temperature range 293-393 K. The electrical activation energy of these films was determined by investigating the temperature dependence of dc conductivity. A decrease in the electrical activation energy from 0.91 to 0.55 eV was observed as the Tl content was increased up to 15 at% in Ge₂₀Se_80−xTl_x system. On the basis of pre-exponential factor, it is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges.     

Electrical conductivity and complex electric modulus of titanium doped nickel-zinc ferrites

The samples Ni_1+x−yZn_yTi_x Fe_2−2xO₄; y=0.1, 0.0≤x≤0.5 were prepared in a single-phase spinel structure as indicated from X-ray analysis. Electrical conductivity and dielectric measurements at different temperatures from 300 K to 600 K in the frequency range from 42 Hz to 5 MHz have been analyzed. The relation of conductivity with temperature revealed a semiconductor to semimetallic behavior as Ti⁴⁺ concentration increases. The conduction mechanism depends mainly on the valence exchange between the different metal ions in the same site or in different sites. The dielectric constant as a function of temperature and frequency showed that there is a strong dependence on the compositional parameter x. The electrical modulus has been employed to study the relaxation dynamics of charge carriers. The result indicates the presence of correlation between motions of mobile ion charges. The activation energies extracted from M′(ω) and M″(ω) peaks are found to follow the Arrhenius law. The electrical conductance of the samples found to be dependent on the temperature and frequency.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.     

Thermoelectric properties of the Bi2−xYxRu2O7 (x=0-2) pyrochlores

Electrical conductivity and Seebeck coefficient for the Bi_2−xY_xRu₂O₇ pyrochlores with x=0.0,0.5,1.0,1.5,2.0 were measured in the temperature range of 473-1073 K in air. With increasing Bi content, the temperature dependence of the electrical conductivity changed from semiconducting to metallic. The signs of the Seebeck coefficient were positive in the measured temperature range for all the samples, indicating that the major carriers were holes. The temperature dependence of the Seebeck coefficient for the Y₂Ru₂O₇ indicated the thermal activation-type behavior of the holes, while that for the Bi_2−xY_xRu₂O₇ with x=0.0-1.5 indicated the itinerant behavior of the holes. The change in the conduction behavior from semiconductor to metal with increasing Bi content is consistent with the increase in the overlap between the Ru4d t_2g and O2p orbitals, but the mixing of Bi6s, 6p states at E_F may not be ruled out. The thermoelectric power factors for the Bi_2−xY_xRu₂O₇ with x=1.5 and 2.0 were lower than 10⁻⁵ W m⁻¹ K⁻² and those with x=0.0,0.5,1.0 were around 1-3×10⁻⁵ W m⁻¹ K⁻².     

Small-polaron mobility in nonstoichiometric cerium dioxide

The high temperature drift mobility (μ_d) of charge carriers in nonstoichiometric cerium dioxide (CeO_2?x) has been calculated by combining the electrical conductivity and nonstoichiometry data on the basis of the oxygen vacancy model with correct ionization state. The electrical conductivity was measured by a four-probe d.c. technique and the nonstoichiometry by thermogravimetric analysis. The dilute solution model of the point defects is valid up to x = 0.03. From the magnitude of μ_d and its temperature dependence, the charge carriers in CeO_2?x, are proposed to be small-polarons formed by localization of electrons at cerium sites and the charge transport process is proposed to occur by a hopping mechanism. The observed temperature dependence of μ_d is in accord with that derived by Holstein and Friedman for small-polaron transport by the hopping mechanism. The activation energy of mobility is found to increase with increasing x as expected for the hopping model.     

Defect formation and transport in mixed-conducting La0.90Sr0.10Al0.85−xFexMg0.15O3−δ

The redox behavior of perovskite-type La_0.90Sr_0.10Al_0.85−xFe_xMg_0.15O_3−δ (x=0.20-0.40) mixed conductors was analyzed by the Mössbauer spectroscopy and measurements of the total conductivity and Seebeck coefficient in the oxygen partial pressure range from 10⁻²⁰ to 0.5 atm at 1023-1223 K. The results combined with oxygen-ion transference numbers determined by the faradaic efficiency technique in air, were used to calculate defect concentrations, mobilities, and partial ionic and p- and n-type electronic conductivities as a function of oxygen pressure. The redox and transport processes can be adequately described in terms of oxygen intercalation and iron disproportionation reactions, with the thermodynamic functions independent of defect concentrations. No essential delocalization of the electronic charge carriers was found. The oxygen non-stoichiometry values estimated from the conductivity vs. p(O₂) dependencies, coincide with those evaluated from the Mössbauer spectra.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

DC conductivity for NixMg1–xFe2O4 ferrites

The DC electrical conductivity was studied as a function of both composition and temperature for the ferrite system Ni_xMg_1–xFe₂O₄ prepared by the usual ceramic technique. The experimental results proved that, the DC electrical conductivity increases as the temperature increases and as the nickel ion content and porosity decrease. The Curie temperature and the activation energies for electrical conduction increase as the nickel ion content increases.     

Zn掺杂n型笼合物Ba8Ga16-2xZnxGe30+x的热电传输特性

用高温熔融结合放电等离子烧结法制备了Zn掺杂单相n型Ba₈Ga_16-2xZn_xGe_30+x笼合物,探索了Zn对Ga的取代对其热电传输特性的影响规律.研究结果表明,n型Ba₈Ga_16-2xZn_xGe_30+x化合物的电导率随着x的增加逐渐增 关键词： 热电传输性能 n型笼合物 框架取代     

High temperature thermoelectric properties of Nb-doped ZnO ceramics

Solid-state reaction processing technique was used to prepare Zn_xNb_1−xO (0≤x≤0.02) polycrystalline bulk samples. In the present study, we find that their lattice parameters a and c tend to decrease with increasing amount of Nb additive. The electrical conductivity of all the Zn_1−xNb_xO samples increased with increasing temperature, indicating a semiconducting behavior in the measured temperature range. The addition of Nb₂O₅ to ZnO led to an increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient. The best performance at 1000 K has been observed for nominal 0.5 at% Nb-doped ZnO, with an electrical resistivity of about 73.13 (S cm⁻¹) and Seebeck coefficient of ∼257.36 μV K⁻¹, corresponding to a power factor (S²σ) of 4.84×10⁻⁴ Wm⁻¹ K⁻². The thermal conductivity, κ, of the oxide decreased as compared to pure ZnO. The figure of merit ZT values of ZnO-doped Nb₂O₅ samples are higher than the ZnO pure sample, demonstrating that the Nb₂O₅ addition is fairly effective for enhancing thermoelectric properties.