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1.
Using molecular-dynamics simulation, we investigate the self-deposition of Aln clusters (n < 4000) on an Al substrate at velocities below the velocity of sound. Both cold crystalline and hot liquid clusters are studied. We examine the cluster deformation after impact on the surface, which we quantify by its height and base radius. At a given cluster velocity, the shape of deposited crystalline clusters is rather independent of the cluster size; only at small cluster sizes, n ? 40, the clusters are less strongly deformed. With increasing cluster size, liquid clusters are more strongly deformed than crystalline clusters. Faster projectiles become more strongly flattened by the deposition process. Even clusters depositing with vanishing velocity show a finite deformation, which is considerable for smaller clusters. At large cluster speed, clusters penetrate deeper into the (1 0 0) surface than into the (1 1 1) surface and also deform more strongly.  相似文献   

2.
A plane-wave density functional theory (DFT) calculations have been performed to investigate structural and electronic properties of TaSin (n = 1-3, 12) clusters supported by graphene surface. The resulting adsorption structures are described and discussed in terms of stability, bonding, and electron transfer between the cluster and the graphene. The TaSin clusters on graphene surface favor their free-standing ground-state structures. Especially in the cases of the linear TaSi2 and the planar TaSi3, the graphene surface may catalyze the transition of the TaSin clusters from an isomer of lower dimensionality into the ground-state structure. The adsorption site and configuration of TaSin on graphene surface are dominated by the interaction between Ta atom and graphene. Ta atom prefers to adsorb on the hollow site of graphene, and Si atoms tend to locate on the bridge site. Further, the electron transfer is found to proceed from the cluster to the surface for n = 1 and 2, while its direction reverses as n > 2. For the case of TaSi, chemisorption is shown to prevail over physisorption as the dominant mode of surface-adsorbate interaction by charge density analysis.  相似文献   

3.
A DFT study of the electronic properties of copper doped aluminum clusters and their reactivity with atomic oxygen is reported. Firstly we performed calculations for the pure Cun and Aln (n = 4, 9, 10, 13, 25 and 31) clusters and we determined their atomization energy for some frozen conformations at the B3PW91 level. The calculated work functions and M-M (M = Cu, Al) bond energies of the largest clusters are comparable with experimental data. Secondly, we focused our attention on the change of the electronic properties of the systems upon the substitution of an Al atom by a Cu one. This latter stabilizes the system as the atomization energy of the 31-atoms cluster increases of 0.31 eV when the substitution is done on the surface and of 1.18 eV when it is done inside the cluster. We show that the electronic transfer from the Al cluster to the Cu atom located at the surface is large (equal to 0.7 e) while it is negligible when Cu is inserted in the Aln cluster. Moreover, the DOS of the Al31 and Al30Cu systems are compared. Finally, the chemisorption energies of atomic oxygen in threefold sites of the Al31, Cu31 and Al30Cu clusters are calculated and discussed. We show that the chemisorption energy of O is decreasing on the bimetallic systems compared to the pure aluminum cluster.  相似文献   

4.
It has been found that spherical large clusters of carbon atoms are formed by irradiation of crystalline C60 films grown on Si(1 1 1)-(7 × 7) surfaces with electrons field-emitted from a scanning tunneling microscope probe tip. The size distribution of the clusters deduced from surface profile measurements suggests that the dominant clusters were not necessarily C60n (n = 2-4) expected from the simple fusion of C60 molecules. It was proposed that electronic excitations of C60 molecules caused the fragment and coalescence of the molecules to form the giant fullerenes as in the photo-induced similar effects.  相似文献   

5.
Low-energy cluster beam deposition was used to deposit mass-selected Aun clusters (n = 4, 6, 13 and 20) on amorphous carbon (a-C) substrates. The resulting samples were stored at room temperature under ambient conditions for time periods up to 32 months to analyze the coarsening behaviour of the clusters. Cluster-size distributions were measured in regular time intervals by transmission electron microscopy (TEM). The TEM experiments show a significant increase of the average cluster size with time analogous to classical surface Ostwald ripening (OR). The coarsening of Au clusters can be well described by steady-state diffusion-limited kinetics. The derived surface mass-transport diffusion coefficients at room temperature range between 1.1 and 3.8·10−25 m2 s−1 for our samples. A detailed analysis of values suggests that, the rate of the surface OR for mass-selected Aun clusters increases with the cluster size in the sequence: Au4 ≈ Au6 < Au13 < Au20 for the investigated range of Au clusters. Given that the initial, on-surface cluster-size distributions are nominally monodisperse, classical OR with cluster coarsening based only on the Gibbs-Thomson effect cannot explain the observed coarsening. The activation of the coarsening process is rationalized by initial variations of the cluster sizes due to the deposition process itself and/or the interaction of the clusters with the substrate. Moreover, the presence of initial deposited Au clusters as different isomers with slightly different chemical potential on the substrate, may also initiate the coarsening by surface OR. Furthermore, we find that the coarsening is most pronounced for the paucidispersed sample with Aum (10 ? m ? 20) clusters. A possible explanation of this behaviour is the presence of an initial distribution of different cluster sizes directly after deposition.  相似文献   

6.
The growth processes and structures of Ga layers formed on a Si(0 0 1) surface have been studied by scanning tunneling microscopy (STM) and abinitio calculation. The precursor states of the Ga clusters that compose the Si(0 0 1) 8 × n-Ga (n = 4, 5, 6) structures are observed in addition to the 2 × 2- and 4 × 2-Ga structures at a Ga coverage of 0.55 ML at 300 °C. There are two types of precursor clusters whose protrusions are observed as different shapes in filled-state STM images. We compare the observed STM images with the simulated ones to identify the possible structural models. From the results, we determine the structure of each precursor cluster. On the basis of the results, the formation processes of the cluster are discussed.  相似文献   

7.
8.
Surface interactions of alkylimidazolium ionic liquids (ILs) with aluminium alloy Al 2011 have been studied by immersion tests in seven neat ILs [1-n-alkyl-3-methylimidazolium X (X = BF4; n = 2 (IL1), 6 (IL2), 8 (IL3). X = CF3SO3; n = 2 (IL4). X = (4-CH3C6H4SO3); n = 2 (IL5). X = PF6; n = 6 (IL6)] and 1-butyl-3-methylpyridinium bis(trifluoromethylsulfonyl)imide (IL7)]. Immersion tests for Al 2011 have also been carried out in 1 wt.% and 5 wt.% solutions of 1-ethyl,3-methylimidazolium tetrafluoroborate (IL1) in water. No corrosion of Al 2011 by neat ILs is observed. The highest corrosion rate for Al 2011 in water is observed in the presence of a 5 wt.% IL1 due to hydrolysis of the anion with hydrogen evolution and formation of aluminium fluoride. Erosion-corrosion processes have been studied for three aluminium alloys (Al 2011, Al 6061 and Al 7075) in a 90 wt.% IL1 solution in water in the presence of α-alumina particles. The erosion-corrosion rates are around 0.2 mm/year or lower, and increase with increasing copper content to give a corrosion resistance order of Al 6061 > Al 7075 > Al 2011. Results are discussed on the basis of scanning electron microscopy (SEM) observations, energy dispersive spectroscopy (EDS) analysis, X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (XPS) determinations.  相似文献   

9.
In the paper an attempt has been made to use the laser-induced plasma as an X-ray source for the growth of nanostructures on the surface of gold. For this purpose, an Nd:YAG laser operated at second harmonics (λ = 532 nm, E = 400 mJ) is used to produce plasma from analytical grade 5N pure Al, Cu and W targets. An analytical grade (5N pure) gold substrate was irradiated by X-rays generated from Al, Cu and W plasma under the vacuum ∼10−4 Torr. The surface was analyzed by two techniques, XRD and AFM. The aberrations in the XRD peaks show that there are significant structural changes in the exposed gold, in terms of decreased reflection intensities, increased dislocation line density, changes in the d-spacing and disturbance in the periodicity of the planes. AFM used to explore the topography of the irradiated gold reveals that regardless of the source, nm sized hillocks have been produced on the gold surface. The roughness of the surface has increased due to the growth of these hillocks.  相似文献   

10.
Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/Tm = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/Tm = 0.55-0.70, where T and Tm are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/Tm = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/Tm = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/Tm = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/Tm = 0.55-0.70 also show the individual characteristic surface morphology.  相似文献   

11.
Chemisorption of oxygen atom on aluminium (1 1 1), (1 1 0) and (1 0 0) surfaces is studied using ab-initio plane wave pseudopotential method based on density functional theory (DFT). Oxygen atom chemisorbed on three different high symmetry sites; top, short-bridge and hollow sites on the aluminium surfaces are examined. It has been found that the O-adatom adsorbed at the hollow site on aluminium (1 1 1), (1 1 0) and (1 0 0) plane yield energetically most stable structure. Calculation of chemisorption energies of O-adatom on aluminium surfaces shows that oxygen is most strongly bound to aluminium atoms on Al(1 1 1) plane and the calculated value of the chemisorption energy of O-adatom at the hollow site on Al(1 1 1) surface is 4.8 eV. In this work, the chemisorption energies calculated for O-adatom on Al(1 1 0) and Al(1 0 0) surfaces are reported for the first time. The electronic structures and the electronic charge density distributions of the oxygen chemisorbed aluminium surfaces are also investigated. Calculations show that for aluminium, p orbitals also contribute significantly along with the s orbitals during the bond formation with oxygen atom. Therefore, the possibilities of hybridizations lead to the strong bonding configurations.  相似文献   

12.
Silicon carbide (SiC), as it is well-known, is inaccessible to usual methods of technological processing. Consequently, it is important to search for alternative technologies of processing SiC, including laser processing, and to study the accompanying physical processes. The work deals with the investigation of pulsed laser radiation influence on the surface of 6H-SiC crystal. The calculated temperature profile of SiC under laser irradiation is shown. Structural changes in surface and near-surface layers of SiC were studied by atomic force microscopy images, photoluminescence, Raman spectra and field emission current-voltage characteristics of initial and irradiated surfaces. It is shown that the cone-shaped nanostructures with typical dimension of 100-200 nm height and 5-10 nm width at the edge are formed on SiC surface under nitrogen laser exposure (λ = 0.337 μm, tp = 7 ns, Ep = 1.5 mJ). The average values of threshold energy density 〈Wthn〉 at which formation of nanostructures starts on the 0 0 0 1 and surfaces of n-type 6H-SiC(N), nitrogen concentration nN ≅ 2 × 1018 cm−3, are determined to be 3.5 J/cm2 and 3.0 J/cm2, respectively. The field emission appeared only after laser irradiation of the surface at threshold voltage of 1000 V at currents from 0.7 μA to 0.7 mA. The main role of the thermogradient effect in the processes of mass transfer in prior to ablation stages of nanostructure formation under UV laser irradiation (LI) was determined. We ascertained that the residual tensile stresses appear on SiC surface as a result of laser microablation. The nanostructures obtained could be applied in the field of sensor and emitting extreme electronic devices.  相似文献   

13.
Dominant aim of the paper was to verify the existence of the SimHn clusters in a-Si:H layers. Thin layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on both glass and crystalline silicon substrates. Their IR and structural properties were investigated by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction at grazing incidence angle (XRDGI). We have found that the layer probably consists of larger structurally ordered parts corresponding to SimHn clusters and separated groups of (Si-Hx)N. The ordered parts could be identified as some of SimHn clusters ranging from (10, 16) to (84, 64) represented by corresponding vibration frequencies in three following IR regions: 600-750, 830-900 and 2080-2180 cm−1. XRDGI measurement indicates that diffraction maximum at around 2Θ = 28° can be attributed to an existing SimHn cluster.  相似文献   

14.
Tianpin Wu 《Surface science》2009,603(17):2764-97
Small Pd clusters Pdn (n = 1, 4, 7, 10, 13) deposited on alumina/NiAl(110) at room temperature were examined by X-ray photoelectron spectroscopy (XPS), as-deposited and after exposure to O2 at temperatures ranging from 100 to 500 K. After O2 exposure at 100 K, the Pd clusters showed XPS shifts indicative of oxidation. The exception was Pd4, which did not oxidize under any conditions. The inertness of Pd4/alumina/NiAl(110) appears to be correlated with a significantly higher-than-expected Pd 3d binding energy, which we attribute to a particularly stable valence shell. None of the clusters examined oxidized during O2 exposures at 300 K or above, but He+ scattering showed that oxygen was bound on the cluster surfaces. Upon heating, all the oxygen associated with these small clusters appeared to spill over and react with the alumina/NiAl(110) support.  相似文献   

15.
The geometries, stabilities, and magnetic properties of PdnAl (n=1–8) neutral clusters are studied using density functional theory with generalized gradient approximation. The growth pattern for different sized PdnAl (n=1–8) clusters is Al-substituted Pdn+1 clusters and it keeps the similar framework of the most stable Pdn+1 clusters except n=6 and 8. Al atoms in the ground state PdnAl isomers tend to occupy the most highly coordinated position. The analysis of stabilities shows that doping an Al atom can enhance the stabilities of the host Pd clusters and the magic number characteristic of Pd4 cluster cannot be changed, the Pd3Al cluster has a higher stability. Charges are transferred from Al atom to Pd atoms in all PdnAl clusters, so the Al atom is the electron donor, and Pd atoms are the electron accepters. Doping an Al atom decreases the average atomic magnetic moments of the host Pd clusters.  相似文献   

16.
A NiAl(1 1 1) single crystal was bombarded with 15 keV Ar+, and the resulting secondary neutrals were analysed by laser postionisation secondary neutral mass spectrometry. By measuring the individual cluster photoion intensity as a function of laser power, the sputter yields of 33 individual clusters were determined. The yield of Aln clusters sputtered from NiAl falls with increasing cluster nuclearity as n−8.7 while Nin and AlmnNin yields are proportional to n−5.9 and n−5.2, respectively. The distribution of thee yields of mixed AlmnNin clusters with n and m is found to diverge significantly from the expected distribution based on a random combinatorial approach, indicating that the energetics due to the chemical bonding in the clusters plays a significant role during cluster formation in the sputtering process.  相似文献   

17.
Interfacial adhesion between metals and organic polymers plays a crucial role in the mechanical properties and reliability performance of multiplayer thin film structures. To improve their interfacial bonding strength and so the reliability, the self-assembled monolayer (SAM) method is considered as an effective means. The present study is devoted to studying the effects of SAM coating on the interfacial bonding strength of the Au-epoxy and the Au-Au bonding structures through molecular dynamics (MD) simulation. Three different types of functionalized alkanethiol SAMs (SH(CH2)nX, X = CH3, OH, NH2) chemisorbed onto two different Au crystal planes, i.e., (1 0 0) and (1 1 1), are considered. The study starts from the characterization of the interfacial bonding strength of both the SAM-coated Au-epoxy and Au-Au systems, followed by the investigation of the dependence of the interfacial bonding strength on the chain lengths and tail groups of the n-alkanethiolates. A comparative study of the effects of the crystal orientation of Au substrate on the bonding strength is reported, and the elastic moduli of these SAMs through uniaxial tensile simulation are also examined. The calculated results are compared with the published experimental data, and also with each other to identify the optimal SAM candidate.Results show that the interfacial bonding strength of the SAM-coated Au-epoxy and Au-Au systems exhibits a strong dependency on the crystal orientation of Au substrate and also on the chain length of the monolayer where it tends to increase with an increasing SAM chain length. In specific, the interfacial bonding strength of the SH(CH2)nCH3 SAM-coated Au-Au joint would reach a maximal value at the chain length n = 8 while that of the SAM/epoxy interface in the SH(CH2)nCH3 SAM-coated Au-epoxy system attains a minimal value at n = 4 and becomes the maximum at n = 10, regardless of the crystal orientation of the Au substrates. Besides, the Au substrate with (1 1 1) crystal orientation would outperform the Au(1 0 0) substrate in the SAM/epoxy interfacial bonding strength of the SAM-coated Au-epoxy system while there is a totally opposite result for that of the SAM-coated Au-Au joint.  相似文献   

18.
The empirical electron surface model (EESM) based on the empirical electron theory and the dangling bond analysis method has been used to establish a database of surface energy for low-index surfaces of fcc-metals such as Al, Mn, Co, Ni, Cu, Pd, Ag, Pt, Au, and Pb. A brief introduction of EESM will be presented in this paper. The calculated results are in agreement with experimental and other theoretical values. Comparison of the experimental results and calculation values shows that the average relative error is less than 10% and these values show a strong anisotropy. As we predicted, the surface energy of the close-packed plane (1 1 1) is the lowest one of all index surfaces. For low-index planes, the order of the surface energies is γ(1 1 1) < γ(1 0 0) < γ(1 1 0) < γ(2 1 0). It is also found that the dangling bond electron density and the spatial distribution of covalent bonds have a great influence on surface energy of various index surfaces.  相似文献   

19.
The multiferroic (PMN-PT/CFO)n (n = 1,2) multilayered thin films have been prepared on SiO2/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO)n multilayered thin films were investigated. For multilayered thin films with n = 1 and n = 2, the remanent polarization Pr are 17.9 μC/cm2 and 9.9 μC/cm2; the coercivity Hc are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed.  相似文献   

20.
An all-electron scalar relativistic calculation on AunH2S (n = 1-13) clusters has been performed by using density functional theory with the generalized gradient approximation at PW91 level. The small gold cluster would like to bond with sulfur in the same plane and the H2S molecule prefers to occupy the on-top and single fold coordination site in the cluster. The Aun structures and H2S molecule in all AunH2S clusters are only slightly perturbed and still maintain their structural integrity. After adsorption, the S-H, H-H bond-lengths and most Au-Au bond-lengths are elongated, only a few Au-Au bond-lengths far from H2S molecule are shortened. The reactivity enhancement of H2S molecule is obvious and the strong gold-sulfur bond is observed expectedly. The most favorable adsorption takes place in the case that the H2S molecule is adsorbed by an even-numbered Aun cluster and becomes AunH2S cluster with even number of valence electrons. It is believed that the strong scalar relativistic effect is favorable to H2S molecule adsorption onto small gold clusters and is also one of the important reasons for the strong gold-sulfur bond.  相似文献   

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