Structural and electrical properties of Germanium-doped Sb70Te30 eutectic thin films

Ge-doped Sb₇₀Te₃₀ eutectic films show high potential for high transfer rate recording and non-volatile memory applications. Their potential applications are based on the difference in optical and electrical properties between the crystalline and amorphous phases. However, the structure and crystallization mechanism of such films is not yet well understood.The aim of this work is to study the amorphous-to-crystalline phase transformation mechanism in eutectic thin films of pure Sb₇₀Te₃₀ and doped with 2, 5 and 10 at% of Ge. Results of isokinetics and isothermal annealing were carried out using various techniques: four-probe electrical, optical reflectance and X-ray measurements.The results of optical and electrical measurements of Ge doped Sb₇₀Te₃₀ eutectic films showed that the addition of Ge increases both, the crystallization temperature and the effective activation energy of crystallization and that the mechanism of crystallization does not depend on Ge contents.In amorphous films, Ge acts as impurity center and does not affect the optical band gap value, but decreases the pre-exponential factor in the thermally activated conductivity. In crystalline films, Ge is probably incorporated into the Sb₇₀Te₃₀ structure and Ge vacancy are responsible for p-type metallic conduction, which increases with increasing the Ge content.     

Crystallization kinetics of amorphous Se60S20Te20

The temperature and the time dependence of the electrical conductivity (6) of a-Se₆₀S₂₀Te₂₀ are investigated. Conductivity anomalies are observed during the crystallization growth from both the amorphous solid and supercooled liquid phases. The changes of 6 during different isothermal annealing of a-Se₆₀S₂₀Te₂₀ samples with time are used to determine the ratio transformed from amorphous to crystalline. A value of 0.97±0.16 eV has been obtained for the activation energy of the crystal growth in the temperature range of 120–170°C.     

Complex crystallization mode of amorphous/nanocrystalline composite Al86Ni2Co5.8Gd5.7Si0.5

Kinetics of the first crystallization stage of Al₈₆Ni₂Co_5.8Gd_5.7Si_0.5 amorphous alloy and structure of the partially crystallized specimens were investigated by measurements of electrical resistance, X-ray diffraction and transmission electron microscopy. The presence of Al nanocrystals and eutectic colonies consisted of mutually oriented crystals of Al and metastable phase was found. The transient nucleation and slowing-down diffusion-limited growth and the interface-controlled growth of the quenched-in nuclei were identified as mechanisms of formation of the Al nanocrystals and eutectic colonies, respectively.     

Calorimetric investigation of the structural relaxation and crystallization of amorphous Ge16Te84 alloys

Differential scanning calorimetric measurements have been performed on amorphous Ge₁₆Te₈₄ alloys; the study of the dependence of the cooling rate on the reciprocal fictive temperature yields the activation energy of the relaxation process; this value fits well that deduced from shear viscosity measurements. The enthalpy difference between the supercooled liquid and the crystal has been investigated by drop calorimetry on samples annealed at different temperatures below T_g, during different times. These results, combined with the former obtained by DSC lead to the enthalpy values of the metastable liquid system from 390 to 510 K.     

Crystallization kinetics of the Zr61Al7.5Cu17.5Ni10Si4 alloy using isothermal DSC and TEM observation

The crystallization behavior and microstructure development of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy during annealing were investigated by isothermal differential scanning calorimetry, X-ray diffractometry and transmission electron microscopy. During isothermal annealing of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy at 703 K, Zr₂Cu crystals with an average size of about 5 nm were first observed during the early stages (30% crystallization) of crystallization by TEM. The Zr₂Cu crystal size increased with annealing time and attained an average size of 20 nm corresponding to the stage of 80% crystallization. In addition, the change in particle size with increasing annealing time exhibited a linear relationship between grain growth time and the cube of the particle size for the Zr₂Cu type crystalline phase. This indicates that the crystal growth of the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ alloy belongs to a thermal activated process of the Arrhenius type. The activation energy for the grain growth of Zr₂Cu is 155 ± 20 kJ/mol in the Zr₆₁Al_7.5Cu_17.5Ni₁₀Si₄ amorphous alloy. The lower activation energy for grain growth in compared to that for crystallization in Zr₆₅Cu₃₅ 440 kJ/mol crystal corresponds to the rearrangement of smaller atoms in the metallic glass, Al or Si (compare to Zr).     

Study on crystallization kinetics of Al65Cu20Ti15 amorphous alloy

The crystallization behavior and thermal stability of amorphous phases of Al₆₅Cu₂₀Ti₁₅ alloy obtained by mechanical alloying were investigated by using in-situ X-ray diffraction and differential scanning calorimetry (DSC) under non isothermal and isothermal conditions. The result of a Kissinger analysis shows that the activation energy for crystallization is 1131 kJ/mol. The higher stability against crystallization of Al₆₅Cu₂₀Ti₁₅ amorphous alloy is attributed to the stronger interaction of atoms in the Al-Cu-Ti system and formed of complicated compound like Al₅CuTi₂ and Al₄Cu₉ as primary phases. The isothermal crystallization was modeled by using the Johnson-Mehl-Avrami (JMA) equation. The Avarami exponents suggest that the isothermal crystallization is governed by a three-dimensional diffusion-controlled growth.     

Crystallization kinetics determination of Pb15Ge27Se58 chalcogenide glass by using the various heating rates (VHR) method

The kinetics of crystallization of Pb₁₅Ge₂₇Se₅₈ was studied by differential scanning calorimetry non-isothermally. Various experimental methods are currently employed for determining the kinetic parameters of crystallization in a glassy system. These parameters include the activation energy of crystallization E (kJ/mol), the kinetic exponent n and the frequency factor K_o (s⁻¹). Recently, a new method (VHR method) has been derived from Johnson-Mehl-Avrami (JMA) transformation rate equation to calculate - in sequence - the crystallization kinetic parameters of a glassy system. The VHR technique has been used to estimate the crystallization parameters of Pb₁₅Ge₂₇Se₅₈ chalcogenide glass under non-isothermal conditions. The average value of E, n and K_o are found equal to 181.74 ± 0.58 (kJ/mol), 1.085 ± 0.023 and (9.196 ± 0.716) × 10¹² (s⁻¹), respectively. The kinetic exponent, n ≈ 1 indicates a surface nucleation mechanism.     

Structural change of liquid Si15Te85 and Si20Te80 with temperature: Ab initio molecular dynamics simulations

Using ab initio molecular dynamics simulations, the structural and electronic properties of liquid Si₁₅Te₈₅ and Si₂₀Te₈₀ at two temperatures were studied respectively. Compared with available experimental data, the calculated structure factors are acceptable. From symmetry arguments, the calculated partial bond-angle distribution functions suggest that with increasing temperature the extensive tetrahedral network structures persist longer in liquid Si₂₀Te₈₀ than those do in liquid Si₁₅Te₈₅. Our results indicate that the local tetrahedral structure around Si atoms and the Peierls-like distorted local atomic structure around Te atoms both play important roles in the structural change of liquid Si₂₀Te₈₀ and Si₁₅Te₈₅, which also suggest that the mechanisms of the structural change upon cooling in liquid Si₂₀Te₈₀ and Si₁₅Te₈₅ are of no essential difference. The results of DOS and LDOS indicate that the variation of the dip in DOS at E_F mainly results from the change of Te p orbitals.     

Apparent activation energy of structural relaxation for Se70Te30 glass

Differential scanning calorimetry and dc conductivity measurements were used to study structural relaxation of Se₇₀Te₃₀ glass. A single set of Tool-Narayanaswamy-Moynihan (TNM) parameters was obtained from the curve-fitting procedure. The value of apparent activation energy Δh∗ was further confirmed by two non-fitting techniques. Results of the Δh∗ evaluation from the T_g dependence on cooling rate are discussed in terms of how the T_f determination might be influenced by the material’s structure type and by the interference of the crystallization process.     

Synthesis of cubic ZrWMoO8 by a melt quenching method

We report a novel approach for fabrication of cubic ZrWMoO₈ applying a melt quenching method. The stoichiometric mixture of ZrO₂, WO₃ and MoO₃ in a 1:1:1 M ratio was melted and quenched at room temperature by pouring the melts between two metal plates. The quenched sample was characterized by X-ray diffraction (XRD), differential thermal analysis (DTA) and scanning electron microscopy (SEM) analysis. As quenched material is polyphase contains above 70% ZrWMoO₈. The obtained composite is thermal stable up to 930 °C. The ZrWMoO₈ was indexed as cubic with a lattice parameter a = 9.1263 (3) Å calculated by the “PowderCell” program. By SEM observation it was established that the microstructure of bulk composite material is built up of one-direction orientated agglomerates with cuboid crystal morphology.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

On the solidification of the Fe50Cr15Mo14C15B6 bulk-amorphized alloy

Investigations of the effect of the initial liquid phase state on the processes of solidification in Fe₅₀Cr₁₅Mo₁₄C₁₅B₆ bulk-amorphized melts have been carried out by differential thermal analysis, X-ray structural analysis, metallography and viscosimetry. The anomalies caused by changing the relation of the atom microgroups of boride and carbide types have been discovered for the first time in polytherms of the melt viscosity in the vicinity of 1653 K and 1793 K. The structural changes observed in the liquid phase result in anomalies in the Fe₅₀Cr₁₅Mo₁₄C₁₅B₆ melt supercooling behaviour and a change in the crystallization mechanism. Structural transformation temperatures, can be considered to be an additional factor in the search for promising alloys with optimized glass forming abilities and enhanced service properties.     

Thermal stability of amorphous Mg50Ni50 alloy produced by mechanical alloying

Amorphous Mg₅₀Ni₅₀ alloy was produced by mechanical alloying (MA) of the elemental powders Mg and Ni using a SPEX 8000D mill. The alloyed powders were microstructurally characterized by X-ray diffraction (XRD). The thermal transformation of amorphous Mg₅₀Ni₅₀ into stable intermetallics (Mg₅₀Ni₅₀ → remaining amorphous + Mg₂Ni → Mg₂Ni + MgNi₂) was analyzed using the Kissinger and isoconversional methods based on the non-isothermal differential scanning calorimetry (DSC) experiments. The apparent activation energies (E_a) and the transformation diagrams, temperature-time-transformation (T-T-T) and temperature-heating rate-transformation (T-HR-T), were obtained for both processes. A good agreement was observed between the calculated transformation curves and the experimental data, which verifies the reliability of the method utilized.     

Crystallization processes in amorphous Zr54Cu46 alloy

The crystallization of amorphous Zr₅₄Cu₄₆ alloy was investigated by using X-ray diffraction (XRD), differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) techniques. The experimental results show that an endothermic peak in DSC traces for amorphous Zr₅₄Cu₄₆ alloy exists at about 1006 K, indicating following eutectoid reaction occurs, namely, Cu₁₀Zr₇+CuZr₂↔CuZr in amorphous Zr₅₄Cu₄₆ alloy during heating. With increasing the heating rate, the glass transition temperature T_g and onset crystallization temperature T_x of amorphous Zr₅₄Cu₄₆ alloy increase in parallel, and the supercooled liquid region ΔT_x (=T_x−T_g) holds almost constant with an average value of 44 K. Both XRD and TEM results prove that Cu₁₀Zr₇ and CuZr₂ are main crystallization products for amorphous Zr₅₄Cu₄₆ alloy under continuous heating conditions. No CuZr phase is identified because of its small precipitation amount. Finally, the crystallization processes of amorphous Zr₅₄Cu₄₆ alloy were summarized.     

An investigation of the kinetic transformation mechanism of Ge12.5Te87.5 chalcogenide glass under non-isothermal regime

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Ge_12.5Te_87.5 chalcogenide glass. The kinetic parameters of glassy Ge_12.5Te_87.5 under non-isothermal conditions are analyzed by the model-free and model-fitting approaches from a series of experiments at different constant heating rates (5-50 K/min). The effective activation energy of crystallization was determined by analyzing the data using the isoconversional methods of Kissinger-Akahira-Sunose (KAS), Tang, Starink, Flynn-Wall-Ozawa (FWO) and Vyazovkin. The analysis of the present data shows that the effective activation energy of crystallization is constant throughout the entire interval of conversions and hence with temperature. The transformation mechanism examined using the local Avrami exponents indicates that one mechanism (three-dimensional growth) is responsible for the transformation process for all heating rates used. The reaction model that may describe the transformation process of the Ge_12.5Te_87.5 chalcogenide glass is the Avrami-Erofeev model (g(α) = [− ln(1 − α)]^1/n) with n = 3 for all heating range at the whole range of crystallized fraction (α = 0.05-0.95). A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ge_12.5Te_87.5 chalcogenide glass demonstrates a single-step mechanism.     

Influence of outphase Cu50Ti50 amorphous alloy addition on microstructural evolution of mechanically alloyed Zr66.7Ni33.3 amorphous alloy

The influence of outphase Cu₅₀Ti₅₀ amorphous alloy addition on microstructural evolution of Zr_66.7Ni_33.3 amorphous alloy has been investigated using a mechanical alloying method. It has been found that the milling induced microstructural evolution is related to the change of peak positions of the first maximum on X-ray diffraction patterns of the as-obtained amorphous alloys. With increasing milling time, the 3 wt.% Cu₅₀Ti₅₀ addition can give rise to the cyclic amorphization transformation of the as-milled alloy. The mechanical stability of the mixing amorphous phase can be greatly enhanced with increasing Cu₅₀Ti₅₀ addition up to 10 wt.%. Moreover, the addition of outphase Cu₅₀Ti₅₀ amorphous alloy not only increases the onset crystallization temperature of Zr_66.7Ni_33.3 amorphous alloy but also alters its crystallization mode. The effect of outphase amorphous addition on the mechanical stability of the Zr_66.7Ni_33.3 amorphous phase has been discussed based upon the bond order theory.     

Barite-type Ba(BeF4)x(SO4)1?x (x = 1 and ≈0.5)

Barite-type α-BaBeF₄ (a = 8.8594(3), b =5.3265(2), c = 7.0493(2) Å, Pnma (No. 62)) and Ba(BeF₄)_0.535(7)(SO₄)_0.465(7) (a = 8.8657(2), b = 5.3902(2), c = 7.1007(2) Å, Pnma (No. 62)) were prepared by precipitation from aqueous solutions and their structures refined from laboratory X-ray powder diffraction data. In the case of α-BaBeF₄ it was possible to identify the light atom Be on a difference Fourier map and to refine its positional parameters in the presence of a heavy atom (Ba). Both phases contain almost ideal isolated BX₄²⁻ tetrahedra (B = Be, Be/S and X = F, F/O) together with Ba, that is 12-fold coordinated by X. The plausibility of the resulting structures was proved with the help of the bond valence model. For both compounds no phase transitions were found up to 550^∘C.     

Structural study of (As2S3)0.6(GeS2)0.4 glass

(As₂S₃)_0.6(GeS₂)_0.4 glass in non-irradiated and γ-irradiated states has been studied by using high-energy synchrotron X-ray diffraction, extended X-ray absorption fine structure spectroscopy, and positron annihilation lifetime spectroscopy. The experimental results are explained by the local changes around As and Ge atoms upon irradiation. These changes are suggested to involve chemical bonds distortion, formation of defective bonds with wrong coordination, rotation of structural units and appearance of additional free volume in the glass network.     

Some features relevant to switching processes in the amorphous semiconductor Si12Ge10As30Te48

The current-voltage characteristics of the amorphous semiconductor glass Si₁₂Ge₁₀As₃₀Te₄₈ have been measured under various experimenal conditions. The experimental results show that the resistance of the device in the ‘off’ state and the threshold voltage for the onset of switching action decrease with increasing the maximum current (I_p) passing through the device in the ‘on’ state, and that the threshold input power to set in the switching action is practically independent of temperature. The stability and the consistency of the device depend on the magnitude of I_p. When I_p is increased to a certain value the glass within and near the current filament between the electrodes become softened, and when it reaches a critical value the device is changed from its ‘switching-on’ state to a ‘memory’ state. All the results are in good agreement with the model that the filament formed to cause switching consists of a mixture of crystalline domains and amorphous domains with phase separations.     

Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 films

Amorphous As₂Se₁Te₂ (a-As₂Se₁Te₂) films, into which Cu or Cd ions were doped by thermal diffusion below the glass transition temperature exhibited the increase of conductivity by several orders of magnitude. In addition, these samples exhibited enhanced photoconductivity and the activation type conduction. From the measurements of the thermoelectric power, it was found that Cu doped samples were p-type and Cd doped samples were n-type. The impurities was also studied by SIMS.