Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes

In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.     

植物照明用荧光粉转换白光二极管的研究

L ED具有效率高、体积小、功耗低、寿命长等优点,并且因其具有可轻易实现宽幅光谱调控的特性,在植物照明领域崭露头角.植物照明用L ED分为两大类,一类是单色光L ED,另一类是白光L ED,其中植物照明用白光L ED可与单色L ED混合或者单独使用从而实现植物补光照明.植物封装用白光L ED大部分采用蓝光L ED芯片或...     

High Color-Rendering Index and Stable White Light-Emitting Diodes Based on Highly Luminescent Quantum Dots

Solid-phase color converter-based quantum dots (QDs) white light-emitting diodes (WLEDs) have become promising next-generation solid-state light sources. However, the development of these WLEDs’ production still suffers from constraints involving insufficient color-rendering index (CRI), low color stability, and short operation lifetimes. Here, thick-shell Cd_0.05Zn_0.95S/CdSe/Cd_xZn_1–xS spherical quantum wells are developed with good color tunability from green to red regions and high photoluminescence quantum yield (up to 88% for green wavelengths). QDs with five emission colors are used to fabricate a series of WLEDs, which possess a good correlated color temperature tunability from warm (3210 K) to cool (22 000K) white light, and a high CRI Ra (>90). Specifically, the neutral white light device with Commission Internationale de l´Eclairage (CIE, International Commission on illumination) of (0.36, 0.36) and the standard white light device with CIE of (0.33, 0.33) achieve a CRI Ra up to 95.8 and 95.11, respectively, they also exhibit long operating life and great color stability. These results indicate that the improvement of the performance and stability of the WLED based on thick-shell spherical quantum wells is remarkable progress in the commercialization of QD-based solid-state lighting.     

胶体量子点电致发光器件的研究进展

胶体量子点因其性质稳定、可溶液加工、发光颜色易于调节、色彩饱和度高等优点在固体照明、平板显示、红外通讯等领域引起人们高度关注.本文详细介绍了最近胶体量子点电致发光领域取得的重要进展,包括基于 II-VI 族(CdSe、CdTe、PbS、PbSe),III-V 族(InAs、InP),和 I-III-VI 族(CuInS、CuInSe)的量子点电致发光二极管.     

Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes

The photometric characteristics of high-power white light-emitting diode(LED)devices are investigated.A theoretical model for the luminous efficacy of high-power white LED devices and LED systems is proposed.With the proposed theoretical model,the mechanism of the luminous efficacy decrease is explained.Meanwhile,the model can be used to estimate the luminous efficacy of LEDs under general operation conditions,such as different operation temperatures and injection currents.The wide validity of the luminous efficacy model is experimentally verified through the measurements of different types of LEDs.The experimental results demonstrate a high estimation accuracy.The proposed models not only can be applied to estimate the LED photometric performance,but also is helpful for reliability research of LEDs.     

Degradation of II-VI ZnSe-Based Single Quantum Well Light-Emitting Devices

Degradation of ZnSe-based light-emitting devices (light-emitting diodes and diode lasers) are reviewed. These devices quickly degrade (i.e., show a decrease in the amount of light emitted) during continuous operation at room temperature. The best lifetimes are currently only a few hours for cw diode laser operation. Degradation of ZnSe quantum-well devices are shown to correlate with the current density necessary for operation and with the density of preexisting defects. The temperature of the quantum well during operation has been shown to be >250°C. The decrease in light emission correlates with the development of dark spot defects (DSDs) and dark line defects (DLDs) in or near the active quantum-well region of the device. It is shown that stress in the quantum well is not relaxed until late in the degradation process, and then only partially. Instead, the mechanism of degradation is shown to be the injection of point defects due to nonradiative relaxation processes, which ultimately collapse into the DSDs and DLDs. Methods to reduce the degradation of these devices are discussed.     

Efficient Top-Emitting Polymer Light-Emitting Diodes Using Chromium as Anode

We demonstrate a high eftlciency top-emitting polymer light-emitting diode （TPLED） with chromium （Cr） taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene （PEDOT：PSS）/poly [2-（4-3＇,7＇- dimethyloctyloxy）-phenyl]-p-phenylenevinylene） （P-PP V） /Ba/Ag. The Cr （ 100 nm） anode is prepared by sputterdepositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT：PSS and the Ag cathode. Optimized thicknesses of PEDOT：PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence （EL） properties, such as a turn-on voltage of 3.32 V, luminous eftlciency of 4.41 cd/A and luminance of 6989cd/m^2 at driving voltage of about 9 V.     

依发光层顺序和厚度调节的多发光层白色有机发光器件

多层结构器件中发光层顺序及厚度对光谱影响很大。文章以RBG(红蓝绿)为基色,制备了具有不同发光层组合次序及厚度的系列白色有机电致发光器件。器件结构为ITO/CuPc(12 nm)/NPB(50 nm)/EML/LiF(1 nm)/Al(100 nm)。使用的蓝色发光材料为2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN),掺杂剂为p-bis(p-N, N-diphenyl-amono- styryl)benzene(DSA-Ph),绿色发光材料为tris-[8-hydroxyquinoline]aluminum(Alq₃),掺杂剂为C545,红色发光材料为tris-[8-hydroxyquinoline]aluminum(Alq₃),掺杂剂为4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB)。通过调节各发光层的顺序和厚度,在200 mA·cm-2时,得到了电流效率为5.60 cd·A-1,色坐标为(0.34, 0.34)的性能稳定的白光器件。当电流密度为400 mA·cm-2时,最大亮度达到了20 700 cd·m-2。根据激子产生及扩散理论对实验结果进行了分析,建立了发光光谱与各发光层的发光效率、各层厚度及激子扩散层长度之间的关系方程, 并以其计算了具有不同红层厚度的RBG结构的光谱的红蓝强度比。计算结果表明实验结果与理论相符。     

Carrier Dynamics Determined by Carrier-Phonon Coupling in InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes

Phonon sidebands in the electrolumiescence(EL) spectra of InGaN/GaN multiple quantum well blue light emitting diodes are investigated. S-shaped injection current dependence of the energy spacing(ES) between the zero-phonon and first-order phonon-assisted luminescence lines is observed in a temperature range of 100–150 K.The S-shape is suppressed with increasing temperature from 100 to 150 K, and vanishes at temperature above200 K. The S-shaped injection dependence of ES at low temperatures could be explained by the three stages of carrier dynamics related to localization states:(i) carrier relaxation from shallow into deep localization states,(ii) band filling of shallow and deep localization states, and(iii) carrier overflow from deep to shallow localization states and to higher energy states. The three stages show strong temperature dependence. It is proposed that the fast change of the carrier lifetime with temperature is responsible for the suppression of S-shaped feature.The proposed mechanisms reveal carrier recombination dynamics in the EL of InGaN/GaN MQWs at various injection current densities and temperatures.     

具有高输出功率的多量子阱发光二极管的结构设计

设计了具有高量子效率的发光二极管(LED)芯片。通过采用Mg掺杂的AlInN-InGaN-AlInN作为LED的电子阻挡层,减小由极化引起的静电场,增大电子和空穴波函数的交叠比,从而增大了辐射复合速率。提高辐射复合速率有利于缓解电子泄露问题,增加了LED的发光功率,减小LED在大电流下的效率下降问题。新设计的芯片在大电流注入下,发光功率是传统结构的两倍。     

全湿法制备聚合物白光器件

使用全溶液法制备聚合物白光器件,通过引入修饰层并改变各层薄膜厚度来优化器件性能。针对ITO 阴极功函数较高的问题,引入功函数较低的蓝光聚芴衍生物：聚[9,9-二辛基芴-9,9-双（N,N-二甲基胺丙基）芴]（PFN）,有效地降低了阴极的复合功函数。同时PFN也是电子注入材料和发光材料。为降低器件的启动电压,引入Cs₂CO₃作为修饰层,同时也提高了电子传输能力。使用MEH-PPV作为橙红光材料。使用二次溶剂掺杂获得的高导PEDOT：PSS聚合物并通过滴膜的方法制备阳极取代了传统的金属电极真空镀膜法,从而使器件制备简单、快捷。最终得到了湿法制作的聚合物白光器件的光谱范围为400~800 nm,涵盖了整个可见光区域。器件的启亮电压为4 V,亮度为1 500 cd/m²,电流效率为0.55 cd/A。     

不规则H形量子势垒增强AlGaN基深紫外发光二极管性能

针对AlGaN基多量子阱中有效的平衡载流子注入问题,研究了有源区势垒层中Al组分调制形成的非规则H形量子势垒对AlGaN基深紫外发光二极管(LED)器件性能的影响及载流子的输运行为。研究发现,与多量子阱中常用的单Al组分势垒相比,加入Al组分较高的双尖峰势垒可以有效地提高内量子效率和光输出功率。进一步研究表明,电子在有源区因凸起的尖峰势垒而得到了有效的阻挡,减少了电子的泄露,而空穴获得更多的动能从而穿过较高的势垒进入有源区。因此,采用非对称H形量子势垒的深紫外LED器件中载流子输运实现了较好的平衡,量子阱中的载流子复合速率远高于普通的深紫外发光二极管。     

多量子阱光学波导中的模式截止

导出了两种材料构成的多量子阱光波导的模式截止方程，并讨论了Ｓｉ衬底上生长的应变ＧｅｘＳｉ１－ｘ／Ｓｉ多量子阱光波导的模式截止特性。     

Creation and Investigation of Organic Light-Emitting Structures Containing Arrays of Colloidal Quantum Dots

We have created organic electroluminescent structures—ITO/TPD/Alq3/Al and ITO/PEDOT:PSS/TPD/Alq3/Al—which are organic light-emitting diodes (OLEDs). Experiments on the incorporation of CdSe/ZnS colloidal quantum dots into the active layer of the structure have been performed. The parameters of the created structures have been determined using optical-spectroscopy methods. The appropriateness of using the method of high-speed vacuum thermal deposition as a main method for the deposition of structural layers has been demonstrated, and the possibility of accelerated formation of layers of the material without disturbing its chemical structure has been shown. By measuring the photoluminescence spectra at different points in samples, we have determined the quality of the obtained structures and plotted maps of the radiation power distribution of the material and of its thickness. Recommendations for the creation of upper contacts and other regions of light-emitting structures have been formulated. We have created organic structures with ITO/PEDOT:PSS/TPD/TPD + CQD’s CdSe/Alq3/Al colloidal quantum dots, in which electroluminescence of CdSe/ZnS quantum dots has been obtained for a wide range of applied voltages. It has been shown that the introduction of colloidal quantum dots into the structure leads to a significant modification of its electroluminescence spectrum.     

二维光子晶体量子阱的光谱特性研究

研究了二维光子晶体量子阱的光谱特性,该量子阱结构由二维正方晶格圆柱晶胞光子晶体通过移去中间位置的介质圆柱层形成。由于光子晶体中的光子禁带充当了光子运动的势垒,类似于半导体量子阱中电子的行为,在光子晶体量子阱结构中会出现量子化的光子能态。文章利用平面波展开法计算了所用光子晶体的能带结构,利用传输矩阵方法计算了量子阱结构的透射光谱。计算结果表明,在光子禁带中出现了离散的透射峰,透射峰的强度随着势垒宽度的增加而减弱,个数随着势阱宽度的增加而增加,通过计算得到了其定量关系,并且讨论了透射峰频率与势阱宽度的关系。     

Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.     

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes （LEDs） grown by metalorganic chemical vapour deposition is investigated by using photoluminescence （PL） and highresolution x-ray diffraction. The full width at half maximum of PL of A1 doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.     

具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED(英文)

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。