Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Quantum Anomalous Hall Multilayers Grown by Molecular Beam Epitaxy

Quantum anomalous Hall(QAH) effect is a quantum Hall effect that occurs without the need of external magnetic field. A system composed of multiple parallel QAH layers is an effective high Chern number QAH insulator and the key to the applications of the dissipationless chiral edge channels in low energy consumption electronics. Such a QAH multilayer can also be engineered into other exotic topological phases such as a magnetic Weyl semimetal with only one pair of Weyl points. This work reports the first experimental realization of QAH multilayers in the superlattices composed of magnetically doped(Bi,Sb)_2Te_3 topological insulator and Cd Se normal insulator layers grown by molecular beam epitaxy. The obtained multilayer samples show quantized Hall resistance h/N_e~2, where h is Planck's constant, e is the elementary charge and N is the number of the magnetic topological insulator layers, resembling a high Chern number QAH insulator. The QAH multilayers provide an excellent platform to study various topological states of matter.     

Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

Short period InAs（4ML）/GaSb（SML） superlattices （SLs） with InSb- and mixed-like （or Ga1-xInxAs1-ySby- like） interfaces （IFs） are grown by molecular-beam epitaxy （MBE） on （001） GaSh substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction （XRD） and atomic force microscopy （AFM） demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence （PL） spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.     

High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy

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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice （SL） short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs（O01） semi-insulating substrates. An interfacal misfit mode AISb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2 ML/S ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800 μm^2 without using passivation or antirefleetion coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25 μm at 300 K, the peak detectivities of the detectors are 4 × 10^9 cm·Hz^1/2/W at 77K and 2 × 10^8 cm·Hz1/2/W at 300K, respectively.     

Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy

We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.     

Semimetal NaaBi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for NaaBi thin films on double-layer graphene are successfully established. The band structure of NaaBi grown on graphene is mapped along Г-M and Г-K; directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface.     

分子束外延生长亚稳态ZnCdSe/MgSe低维量子阱结构及其光学性质

采用分子束外延技术在(001)取向的InP衬底上外延生长了亚稳态的ZnxCd1-xSe/MgSe低维量子阱结构,并通过光致发光和子带吸收方法,分析其能带结构。在单量子阱样品制备过程中,高能电子衍射强度振荡表明MgSe可以实现二维生长模式,衍射图样证明其为亚稳态闪锌矿结构。通过引入厚的ZnxCd1-xSe空间层,抑制了MgSe垒层的相变,并能进一步提高样品的结晶质量,得到高结晶质量的多量子阱结构。通过计算不同阱宽的能带与光致发光实验比较,证明了ZnxCd1-xSe/MgSe的导带带阶为1.2 eV,价带带阶为0.27 eV。为了进一步验证其能带结构,制备了电子掺杂的ZnxCd1-xSe/MgSe的多量子阱,观测到半高宽很窄的中红外吸收。利用发光谱确定的带阶计算了量子阱中子带的吸收波长,和实验结果非常吻合。设计了一种双量子阱结构,计算结果显示,通过利用量子阱中的耦合效应,可以实现1.55μm光通信波段的吸收。     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.     

Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy

Russian Physics Journal - For the first time, the admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy was experimentally investigated in a wide range of frequencies and...     

P-MBE制备氮掺杂p型ZnO中空穴的散射机制

利用等离子体辅助的分子束外延(P-MBE)技术,在蓝宝石衬底上制备了氮掺杂的p型ZnO薄膜。通过变温霍尔测量研究了空穴浓度和迁移率随温度的变化特性。对载流子浓度拟合的结果表明氮受主具有75meV的能级深度。通过对各种散射机制下迁移率的讨论,发现由晶粒及其晶界组成的这种结构极大地降低了p型ZnO中载流子的迁移率。     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Be掺杂InAs处组织量子点的发光特性

首次细致地研究了ＩｎＡｓ量子点中直接掺杂Ｂｅ对其发光特性的影响。光致发光（ＰＬ）谱的研究表明,较低掺杂浓度时,发光峰蓝移,同时伴随着发光谱线变窄。而较高浓度的掺杂会对量子点的光谱特性产生不良的影响,发光强度明显变弱。相信该研究对ＩｎＡｓ自组织量子点在器件应用方面有很重要的意义。     

Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

High-quality Ga-doped ZnO （ZnO：Ga） single crystalline films with various Ga concentrations are grown on a- plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2at.% and the lowest resistivity can reach 1.92 ×10-4Ω·cm at room temperature, close to the best value reported. In contrast to ZnO：Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO：Ga thin film is discussed.     

Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy

Physics of the Solid State - The results of experimental studies of the electronic and photoemission properties of the GaN epitaxial layer grown by molecular beam epitaxy with plasma activation of...     

High Quality AlN with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

We report an AlN epi-layer grown on sapphire by plasma-assisted molecular beam epitaxy with a thin interlayer structure. The effects of growth mode on threading dislocations (TDs) and surface morphology are studied. Then an interlayer structure grown under a V/Ⅲ ratio of 1 is adopted to improve the AlN crystalline quality. By optimizing the thickness of the interlayer, the TD density and surface roughness can be reduced simultaneously.     

Experimental Evidence of Topological Surface States in Mg_3Bi_2 Films Grown by Molecular Beam Epitaxy

Nodal line semimetal(NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands. The so-called type-Ⅱ NLS means that these two crossing bands have the same sign in their slopes along the radial direction of the loop, which requires that the crossing bands are either right-tilted or left-tilted at the same time. According to the theoretical prediction, Mg_3Bi_2 is an ideal candidate for studying the type-Ⅱ NLS by tuning its spin-orbit coupling(SOC). High-quality Mg3 Bi2 films are grown by molecular beam epitaxy(MBE). By in-situ angle resolved photoemission spectroscopy(ARPES), a pair of surface resonance bands around the■ point are clearly seen. This shows that Mg_3Bi_2 films grown by MBE are Mg(1)-terminated by comparing the ARPES spectra with the first principles calculations results. Moreover, the temperature dependent weak anti-localization effect in Mg_3Bi_2 films is observed under magneto-transport measurements, which shows clear two-dimensional(2 D) e-e scattering characteristics by fitting with the Hikami–Larkin–Nagaoka model. Therefore, by combining with ARPES, magneto-transport measurements and the first principles calculations, this work proves that Mg_3Bi_2 is a semimetal with topological surface states. This paves the way for Mg_3Bi_2 to be used as an ideal material platform to study the exotic features of type-Ⅱ nodal line semimetals and the topological phase transition by tuning its SOC.     

Single-Photon Emission from InAs/AlGaAs Quantum Dots

The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g²(τ) in a wide spectral range from 630 to 730 nm.