Probing Field Emission from Boron Carbide Nanowires

High density boron carbide nanowires are grown by an improved carbon thermal reduction technique. Transmission electron microscopy and electron energy lose spectroscopy of the sample show that the synthesized nanowires are B4 C with good crystallization. The field emission measurement for an individual boron nanowire is performed by using a Pt tip installed in the focused ion beam system. A field emission current with enhancement factor of 10^6 is observed and the evolution process during emission is also carefully studied. Furthermore, a two-step field emission with stable emission current density is found from the high-density nanowire film. Our results together suggest that boron carbide nanowires are promising candidates for electron emission nanodevices.     

Melting of Shocked Boron Carbide

JETP Letters - The aim of this work is to determine the melting temperature of boron carbide at high shock pressures. To this end, powder boron carbide samples have been compressed by shock waves...     

A Free Energy Model of Boron Carbide

The assessed phase diagram of the boron-carbon system contains a single nonstoichiometric boron-carbide phase of rhombohedral symmetry with a broad, thermodynamically improbable, low temperature composition range. We combine first principles total energy calculations with phenomenological thermodynamic modeling to propose a revised low temperature phase diagram that contains two boron-carbide phases of differing symmetries and compositions. One structure has composition B₄C and consists of B₁₁C icosahedra and C-B-C chains, with the placement of carbon on the icosahedron breaking rhombohedral symmetry. This phase is destabilized above 600 K by the configurational entropy of alternate carbon substitutions. The other structure, of ideal composition B₁₃C₂, has a broad composition range at high temperature, with rhombohedral symmetry throughout, as observed experimentally.     

Evolution of Shock Waves in Hot-Pressed Ceramics of Boron Carbide and Silicon Carbide

Technical Physics - In this paper we studied the evolution of shock compression waves in hot-pressed ceramics based on boron carbide and silicon carbide at a maximum compressive stress of 32 and 34...     

Densification of Crystalline Boron Carbide during Shock-Wave Loading

Crystalline powder boron carbide samples are subjected to explosive loading by 2-μs shock waves with an amplitude of 38 GPa and shock heating to 700 K and to subsequent conservation. The samples recovered after shock-wave loading are studied by X-ray diffraction, and new effects of shock-wave loading on boron carbide are revealed. The explosive treatment is shown to shift the X-ray diffraction reflections of initial boron carbide toward high angles, which is attributed to an increase in the boron carbide density at the level of atomic volume in the unit cell of boron carbide. The X-ray diffraction reflections are found to broaden, which is interpreted as an increase in the coherent scattering region in the crystalline boron carbide subjected to the explosive treatment.     

硅纳米线的生长及其拉曼光谱研究(英文)

pacc:7830 Nanowiresofferauniqueaccesstolowdi mensionalphysicsandnanotechnology.Silicon nanowires(SiNWs)areparticularlyinteresting duetotheprominentroleofsiliconinelectronics. Variousapproachesforselectivegrowthandbulk productionofSiNWsaredemonstrated.Pla…     

ZnO纳米线的合成与生长机理

采用化学气相沉积系统制备ZnO纳米线,以覆盖一层约5nm厚的Ag薄膜的单晶Si(001)为衬底,纳米线的生长遵循气-液-固(VLS)机理。对得到的样品采用X射线衍射(XRD)和扫描电镜(SEM)进行晶体结构和形貌的表征。XRD结果表明衬底温度在600~700℃时生长的ZnO纳米线具有六方结构和统一的取向。通过扫描电子显微镜分析,比较了生长温度对纳米线直径和长度的影响。实验表明我们可以通过催化剂和温度来实现ZnO纳米线生长的可控。与传统的VLS生长方式不同的是在我们制备的ZnO纳米线顶端并没有看到催化剂颗粒,表明纳米线的生长方式是底部生长,我们对其生长机理进行了研究。     

Optical Emission Diagnosis of Boron Carbide Synthesized Using Natural Carbon Precursors

Optics and Spectroscopy - Boron carbide (B4C) is a semiconducting material that finds a wide range of industrial and optoelectronic applications because of its unique structural and physical...     

Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

In this paper the effect of varying temperature, pressure and chemical precursors on the vapour–liquid–solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.     

碳化物形成对石墨烯生长的影响

选取了一个典型的金属碳化物体系Mo₂C对其形成在石墨烯生长中的作用进行了基于第一性原理的理论研究. 碳在Mo₂C体相中扩散十分困难,而在Mo₂C(001)表面则变得比较容易. 因此抑制碳析出和表面石墨烯生长可以同时实现. 在Mo₂C(101)表面碳扩散的难易程度依赖于扩散方向. 相对于(001)表面,(101) 表面不利于石墨烯生长.     

Transition Metal Silicide Nanowires Growth and Electrical Characterization

We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires （TM-NW） growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM （c-AFM）, the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω＆#12539;cm.     

硅纳米线的PEOVD生长研究

本文以硅烷（SiH4）为反应气体,利用等离子体化学气相沉积（PECVD）方法在硅（100）衬底上生长硅纳米晶体、纳米线。应用扫描电镜观察不同条件下生长的样品表面,发现衬底条件对硅纳米结构的影响十分显著。在温度、压强等其它条件相同的情况下,对硅衬底应用Fe^3＋催化剂处理后,呈纳米线状结构生长,而无Fe催化剂涂覆情况下,基本呈纳米晶体状生长,说明催化剂对si纳米线的生成起了重要的促进生长作用。通过进一步研究硅纳米晶体、纳米线的等离子增强化学气相生长机理,发现它们以气-液-固（VLS）机制生长。     

常压下金催化硅纳米线生长实验研究

采用固一液一固（SLS）生长机制,研究常压下金催化硅纳米线的制备方法。实验中将硅基Au薄膜在氩氢气中退火,退火温度为1050℃和1080℃,退火完成后在扫描电镜下观察硅片表面的形貌变化,分析不同退火温度、通气量和金膜厚度下的实验结果,并在此基础上进一步讨论了各变量对硅纳米线的生长影响及其机理。     

六方氮化硼薄膜对石墨烯-碳化硅结构近场热辐射的增强

六方氮化硼(hBN)具有跟石墨烯类似的层状结构和晶格参数,研究发现hBN薄膜具有良好的热传导、电绝缘、光学和力学等性能.本文从理论上研究了 hBN薄膜对石墨烯-碳化硅(G/S)结构的近场热辐射的影响.研究发现在红外频段,hBN薄膜在低频率区和高频率区会增强G/S结构的近场热辐射,经计算在G/S结构中加入厚度为10 nm...     

银纳米线的侧向生长及其抑制研究

采用多元醇法,在不同温度,不同PVP滴加速度和加入量的条件下合成了银纳米线。利用XRD, UV-Vis, SEM和TEM对银纳米线及其侧向生长过程进行了观察和分析。UV-Vis表明银纳米线在纵向生长的同时发生了侧向生长。而且表示银纳米线侧向生长的紫外吸收光谱峰在银纳米线合成后期发生了明显的红移,由384 nm红移至约388 nm处,表明银纳米线合成后期直径迅速增长,银纳米线发生了快速的侧向生长。SEM研究表明银纳米线直径在反应前期(15～23 min)只增加了20 nm,而在反应后期(23～30 min)银纳米线直径增加了近150 nm,SEM观察结果与UV-Vis分析结论一致。同时还发现银纳米线直径不仅与晶种大小有关而且与银线外覆盖的银层厚度有关,银源以吸附在银线侧面的小银颗粒为附着点沿其侧面多点沉积导致了银纳米线的侧向生长;降低反应液温度(165 ℃降至155 ℃),降低PVP滴加速度(67 mL·h-1减小到49 mL·h-1)以及减少银纳米线合成后期PVP加入量可抑制银纳米线的侧向生长,显著提高银纳米线长径比,银纳米线直径由200 nm减小至100 nm左右,长度仍保持在100 μm以上。     

Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates

Cubic boron nitride （c-BN） films were deposited on highly-oriented （111） bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy （μ-RS） and scanning electron microscopy （SEM）, The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained, Island and step growth models are clearly shown.     

高分子软模板法自组装生长ZnO纳米线及其光学性能

采用自组装技术,利用均聚极性高分子(聚丙烯酰胺、聚乙烯醇等)长分子链作为自组装模板在半导体硅衬底上自组装生长出ZnO纳米线。采用扫描电镜(FE-SEM)和透射电镜(HRTEM)对样品的表面形貌和结构分析表征的结果表明,ZnO纳米线直径约50~80nm、长度大于4μm,具有六方纤锌矿单晶结构,且沿c轴方向择优取向生长。采用室温下光致发光(PL)谱和紫外吸收(UV)光谱对制得的ZnO纳米线的光学性能研究表明,其PL光谱上有较强的紫外发射和较弱的蓝光发射,UV吸收光谱表明样品在紫外区有强的宽带吸收,且随着纳米线粒径的减小,吸收峰出现了蓝移现象。研究探讨了高分子诱导ZnO纳米线自组装定向生长机制、发光机理及其与工艺条件的内在联系。