Diode-laser-array end-pumped 14.3-W CW Nd:GdVO4 solid-state laser at 1.06 μm

A diode-laser-array end-pumped efficient CW Nd:GdVO₄ laser at 1.06 μm has been developed. A low-order-mode output power of 14.3 W was obtained at the maximum available pump power of 26 W, giving an optical conversion efficiency of 55% and an average slope efficiency of 62%. The laser output beam quality factor at full pump power was determined to be M²<1.8. It is also shown that only lightly doped Nd:GdVO₄ crystals are suitable for high-power end-pumped lasers. Received: 4 May 1999 / Published online: 29 July 1999     

A high-power continuous-wave diffraction-limited Nd:GdVO4 laser operating at 1.34 μm

High-power and high beam quality continuous-wave (CW) Nd:GdVO₄ lasers operating at 1.34 μm were experimentally demonstrated. The lasers consisted of either one or two crystals, which were both end-pumped by high-power fiber-coupled diode lasers. With one crystal, the maximum CW output power generated was 8.4 W. When two crystals were used, a maximum output power of 15.7 W was achieved with the incident pump power of 76.2 W, showing a slope efficiency of 26.2% and an optical-to-optical efficiency of 20.6%. The beam divergence at an output power of 15 W was measured to be about two times that of the diffraction limit.     

A 7-W diode-pumped Nd:YVO4 cw laser at 1.34 μm

A Nd:YVO₄ laser, end-pumped by a fiber-coupled diode-laser array, generates 7.3 W of output power at 1342 nm, the highest so far reported for this host crystal. The slope efficiency is 40% and the output-beam divergence is close to the diffraction limit. An important point in attaining such results is the choice of crystals with low Nd concentration. Received: 16 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +39-050/844333, E-mail: dilieto@df.unipi.it RID="**" ID="**"Permanent address: Scuola Normale Superiore, Piazza dei Cavalieri 7, Pisa, Italy     

26.3-W continuous-wave, diode-double-end-pumped all-solid-state Nd:GdVO4 laser operating at 1.34 μm

A high-power continuous-wave (CW) all-solid-state Nd:GdVO₄ laser operating at 1.34 μm is reported here. The laser consists of a low doped level Nd:GdVO₄ crystal double-end-pumped by two high-power fiber-coupled diode lasers and a simple plane-parallel cavity. At an incident pump power of 88.8 W, a maximum CW output of 26.3 W at 1.34 μm is obtained with a slope efficiency of 33.7%. To the best of our knowledge, this is the highest output at 1.34 μm ever generated by diode-end-pumped all-solid-state lasers.     

Diode-pumped cw and Q-switched Nd:GdVO4 laser operating at 1.34 μm

A diode-pumped 1.34 m Nd:GdVO₄ laser operating in cw and active Q-switching modes has been demonstrated. 4.15 W of cw output power was obtained at the highest attainable pump power of 12.3 W, resulting in an optical conversion efficiency of 33.7%, the slope efficiency was determined to be 37.6%. In Q-switching operation, a maximum average output power of 2.7 W was generated at pulse repetition frequency (PRF) of 50 kHz, with an optical conversion efficiency of 22% and a slope efficiency of 29.2%. The laser pulses with shortest duration, highest energy and peak power were achieved at PRF of 10 kHz, the parameters being 15 ns, 160 J, and 10.7 kW, respectively. By intracavity frequency-doubling with a type II phased-matched KTP crystal, 0.62 W average power at 0.67 m was produced at a PRF of 15 kHz, the resulting pulse energy, peak power, and pulse width being 41.3 J, 2.2 kW, and 19 ns, respectively. A group of analytical formulae, based on rate equations, are presented to evaluate the operational parameters of an actively Q-switched laser. Calculated results were found to be in close consistency with the experimental data.     

6.2 W laser-diode end-pumped continuous-wave Nd:YALO3 laser at 1.34 μm

We report a compact and efficient LD end-pumped linearly polarized Nd:YAP laser operating at 1.34 μm. The laser system with different crystal lengths, output couplers and cavity types were compared. Based on optimizing of the pump system and laser cavity, 6.2 W laser radiation at 1341.4 nm with c-axis polarized was achieved, corresponding to an optical conversion efficiency of about 24.8% with respect to the incident pump power. The laser threshold was only about 1.3 W and the optical slope efficiency was up to 27.2%.     

Diode-pumped continuous-wave and passively Q-switched 1.06 μm YVO4/Nd:GdVO4 laser

In this letter, a diode-pumped continuous-wave and passively Q-switched 1.06 μm laser with a novel composite YVO₄/Nd:GdVO₄ crystal was demonstrated for the first time. Theoretical calculations showed that the temperature distribution in YVO₄/Nd:GdVO₄ crystal was lower than that in GdVO₄/Nd:GdVO₄ and Nd:GdVO₄ crystals under the same conditions. After optimizing the mode matching degree, a CW output power of 5.6 W of YVO₄/Nd:GdVO₄ laser was obtained at the incident pump power of 12 W when the output coupler with transmission of 30% was employed. Using Cr^4 +:YAG crystals with initial transmission (T₀) of 80% and 90% as saturable absorbers, the pulsed YVO₄/Nd:GdVO₄ laser characteristics were investigated. At the incident pump power of 12 W, the maximum average output power of 2.76 W and the maximum repetition rate of 189 kHz was achieved when T₀ = 90% Cr^4 +:YAG was used. The shortest pulse width was 28.1 ns when the initial transmission of the used Cr^4 +:YAG was 80%.     

Performance of a diode-pumped 5 W Nd3+:GdVO4 microchip laser at 1.06 μm

4 as a host for neodymium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of neodymium in GdVO₄ is considerably stronger and broader than in YAG. This allows for the construction of very compact monolithical microchip lasers. In our paper, we report for the first time on a diode-pumped monolithical Nd³⁺([%at.]1.3):GdVO₄ microchip laser at 1.06 μm. A maximum output power of 5 W is achieved. The temporal and the spectral emission properties are described. The beam propagation properties are studied in detail. Received: 23 July 1998 / Revised version: 9 November 1998 / Published online: 24 February 1999     

Diode-pumped Nd:YGG continuous-wave laser at 1.33 μm

We demonstrated a laser-diode pumped Nd-doped yttrium gallium garnet (Nd:YGG) crystal continuous wave (CW) laser at 1.33 μm for the first time to our knowledge. At an incident pump power of 18.5 W, as high as 3.09 W of CW output power at 1.33 μm is achieved. The slope efficiency with respect to the incident pump power was 21.3%, and the fluctuation of the output power was better than 2.8% in the given 4 h. The beam quality factor M² is 1.14 and 1.16 for tangential direction and sagittal direction, respectively.     

Diode-pumped passively Q-switched Nd:GdVO4 lasers operating at 1.06 μm wavelength

With a 10-W diode laser to pump Nd:GdVO₄ crystal in a folded cavity, we demonstrated Cr⁴⁺:YAG passively Q-switched Nd:GdVO₄ lasers at 1.06 μm. The maximum average output power of 2.1 W and the highest peak power of 625 W were, respectively, obtained when the initial transmissions of the Cr⁴⁺:YAG crystals were 90% and 80%. Received: 8 September 1999 / Revised version: 30 December 1999 / Published online: 8 March 2000     

High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd：GdVO4 Laser

A high power cw all-solid-state 1.34-μm Nd：GdVO4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9 W is obtained at incident pump power of 96 W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress- resistance figure of merit of Nd：GdVO4 crystal with 0.3 at% Nd^3＋ doped level is calculated to be larger than 9.94 W/cm.     

6.5-ns actively Q-switched Nd:YVO_4 laser operating at 1.34 μm

With a plano-concave cavity,diode-pumped continuous-wave(CW) and actively Q-switched Nd:YVO4 laser operating at 1.34 μm is demonstrated.Maximum CW output power of 4.76 W and Q-switched average output power of 2.64 W are obtained with output coupler(transmission T = 3.9%).For the Q-switching operation,the theoretically calculated pulse energy and pulse width,with a pulse repetition frequency(PRF) range of 5-40 kHz,coincide with the experimental results.With a T = 11.9% output coupler,the maximum peak power of 24.3 kW and minimum pulse width of 6.5 ns are obtained when the PRF is 10 kHz.To the best of our knowledge,this is the shortest actively Q-switched pulse duration ever obtained in a 1.3-μm Nd-doped vanadate laser.     

Study of passive Q-switching for flash-lamp-pumped 1.34-μm Nd:GdVO_4 laser

The static laser performance of a-growth Nd:GdVO4 crystal (a-cut, 4×4×25 (mm)) at 1.34μm pumped by flash-lamp is investigated with different transmissions of output couplers. With the output coupler transmission of T = 30%, the static output energy of 148 mJ is obtained when the pump energy is 35.2 J, and the corresponding electric-optical conversion efficiency is 0.42%. The Q-switched output of lasers with the output wavelength ranging from 1.3 to 1.6μm can be realized by using Co2 :LaMgAl11O19 (Co:LMA) as saturable absorber. A flash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with Co:LMA as saturable absorber is demonstrated in plano-concave laser cavity. With the cavity length of 16.3 cm and pump energy of 19.8 J, the single-pulse output energy, pulse width, and peak power are obtained to be 4 mJ, 80 ns, and 5×104 W, respectively.     

Low-cost low-threshold diode end-pumped Tm:YAG laser at 2.016?μm

We report a low-threshold continuous-wave Tm:YAG laser that can be excited near 785?nm with low-cost, single-mode AlGaAs laser diodes. Low-threshold operation was achieved using a tightly focused, astigmatically compensated x-cavity containing a 2-mm-thick Tm:YAG crystal with 5?% Tm³⁺ concentration. Two linearly polarized single-mode diodes operating at 785.8?nm were polarization coupled to end pump the resonator. With a 6?% output coupler, as high as 32?mW of output power could be obtained at 2016?nm with 184?mW of incident pump power. The output could be further tuned in the 1935?C2035?nm range. Slope efficiency measurements indicated that cross-relaxation was very effective at this doping level. With a 2?% output coupler, lasing could be obtained with as low as 32.3?mW of pump power. In the limit of vanishing output coupling, the incident threshold pump power could be reduced to as low as 25?mW. To our knowledge, this is among the lowest lasing thresholds reported to date for continuous-wave, room-temperature thulium lasers.     

Compact, efficient diode-end-pumped Nd：GdVO4 slab continuous-wave 912-nm laser

A fiber-coupled laser-diode （LD） end-pumped Nd:GdVO₄ slab continuous-wave （CW） 912-nm laser and an LD bar end-pumped Nd:GdVO₄ slab CW 912-nm laser are both demonstrated in this paper.Using the fiber-coupled LD of end-pumped type,a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical-to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%.The measured M 2 factors of beam quality in x and y directions are 5.3 and 5.1,respectively.Besides,an LD bar of end-pumped type is used to realize CW 912-nm laser output,which has the advantages of compactness and low cost.When the pump power is 38.8 W,the output power is 8.87 W and the measured M 2 factors of beam quality in x and y directions are 16 and 1.31,respectively.In order to improve the beam quality of the 912-nm laser at x direction,a new quasi-concentric laser resonator will be designed,and an LD bar end-pumped Nd:GdVO₄ slab high-power CW 912-nm TEM₀₀ laser will be realized in the future.     

6.5-ns actively Q-switched Nd：YVO4 laser operating at 1.34 μm

A novel design of multimode light power splitter is proposed and fabricated by using secondary asymmetric Y branches.An almost equally divided output among output terminals is obtained experimentally.Maskless laser direct writing technique is applied in the fabrication process to facilitate the formation of power splitters by ultraviolet curable polymer.The analysis of the performances of both four-port and eight-port devices shows that these two dividers obtain a power splitting uniformity of more than 95%.     

Passively mode-locked Nd：GdVO4 laser at 912nm

This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.     

Bulk Nd3+-doped tellurite glass laser at 1.37 μm

We have demonstrated, for the first time to our knowledge, lasing at 1.37 μm in a tellurite-based glass host doped with 0.5 mol.% neodymium: Nd³⁺:(0.8)TeO₂–(0.2)WO₃. The gain-switched laser could be operated with 59 μJ threshold pulse energy as well as 5.5% slope efficiency. As high as 6 μJ-pulses with a duration of 1.74 μs were obtained. The pulse repetition rate was 1 kHz. The emission cross section from the threshold analysis turned out to be 1.57×10^?20 cm² at 1370 nm by taking into account excited-state absorption from ⁴F_3/2 to ⁴G_7/2 energy level. Furthermore, the ratio of excited-state absorption to the emission cross section was found out to be 0.78 by using the slope efficiency value.     

Diode end-pumped 1123-nm Nd:YAG laser with 2.6-W output power

We present a compact and high output power diode end-pumped Nd:YAG laser which operates at the wavelength of 1123 nm. Continuous wave (CW) laser output of 2.6 W was achieved at the incident pump power of 15.9 W, indicating an overall optical-optical conversion efficiency of 16.4%, and the slope efficiency was 18%.