共查询到20条相似文献,搜索用时 31 毫秒
1.
D. C. Glattli C. Pasquier U. Meirav F. I. B. Williams Y. Jin B. Etienne 《Zeitschrift für Physik B Condensed Matter》1991,85(3):375-380
A double barrier Single Electron Transistor is realized in two dimensions by confining the 2-D electron gas of a GaAs/GaAlAs heterojunction to a small island by means of Schottky gates. Two gates provide adjustable tunnel barriers and a central gate controls the electron number in the island. The island has small single-particle energy level spacing and forms a metallic island. Periodic conductance oscillations characteristic of Coulomb blockade are observed when the central gate voltage is varied. The ability to vary the tunnel conductance allows us to study the basic physics of the Coulomb blockade: our results show that the quantum charge fluctuation mechanism which limits the tunneling blockade at low temperature is of second order in tunnel barrier transparencies in agreement with the charge Macroscopic Quantum Tunneling (q-MQT) or co-tunneling model. 相似文献
2.
《Physica E: Low-dimensional Systems and Nanostructures》2011,43(10):2602-2605
We report the unexpected temperature dependence of electron tunneling from the two-dimensional electron gas (2DEG) to the Si-dot in a Si-dots floating gate metal-oxide-semiconductor (MOS) capacitor. We indicate that this temperature dependence of the electron tunneling cannot be explained by the conventional one-dimensional tunneling model, and show that it is necessary for a new model which includes the geometrical factor of the system. To extract a mechanism of the electron injection process from the 2DEG to the nano-structure, we have employed the numerical simulation, which includes both the geometrical condition of the system and the experimental setup. We suggest in our new tunneling model that the main contribution to the electron tunneling is induced by the wave-packet-like state of the electron below the Si-dots. We successfully show that the temperature dependence of the electron injection voltage in the Si-dots floating gate MOS capacitor fits our model. This indicates that the spatial distribution of electron density in the two-dimensional electron gas would play a crucial role in the electron tunneling. 相似文献
3.
L. P. Kouwenhoven N. C. van der Vaart A. T. Johnson W. Kool C. J. P. M. Harmans J. G. Williamson A. A. M. Staring C. T. Foxon 《Zeitschrift für Physik B Condensed Matter》1991,85(3):367-373
We have studied charging effects in a lateral split-gate quantum dot defined by metal gates in the two dimensional electron gas (2 DEG) of a GaAs/AlGaAs heterostructure. The gate structure allows an independent control of the conductances of the two tunnel barriers separating the quantum dot from the two 2 DEG leads, and enables us to vary the number of electrons that are localized in the dot. We have measured Coulomb oscillations in the conductance and the Coulomb staircase in current-voltage characteristics and studied their dependence on the conductances of the tunnel barriers. We show experimentally that at zero magnetic field charging effects start to affect the transport properties when both barrier conductances are smaller than the first quantized conductance value of a point contact at 2e
2/h. The experiments are described by a simple model in terms of electrochemical potentials, which includes both the discreteness of the electron charge and the quantum energy states due to confinement. 相似文献
4.
Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density. 相似文献
5.
Jari M. Kinaret Mats Jonson Robert I. Shekhter Sebastian Eggert 《Physica E: Low-dimensional Systems and Nanostructures》1998,1(1-4)
We consider a mesoscopic ring connected to external reservoirs by tunnel junctions. The ring is capacitively coupled to an external gate electrode and may be pierced by a magnetic field. Due to strong electron–electron interactions within the ring the conductance shows Coulomb blockade oscillations as a function of the gate voltage, while Aharonov–Bohm interference effects lead to a dependence on the magnetic flux. The Hamiltonian of the ring is given by a Luttinger model that allows for an exact treatment of both interaction and interference effects. We conclude that the positions of conductance maxima as a function the external parameters can be used to determine the interaction parameter
, and the shapes of conductance peaks are strongly affected by electron correlations within the ring. 相似文献
6.
YT Wang GH Kim CF Huang ST Lo WJ Chen JT Nicholls LH Lin DA Ritchie YH Chang CT Liang BP Dolan 《J Phys Condens Matter》2012,24(40):405801
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting. 相似文献
7.
We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas(2DEG)in AlGaN/GaN high electron mobility transistors(HEMTs).By introducing a drifted Fermi–Dirac distribution,we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation.Then,the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature.Under random phase approximation(RPA),the electric field driven plasmon dispersion is investigated.The calculated results indicate that the plasmon frequency is dominated by both the electric field and the angle between wavevector and electric field.Importantly,the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage(change of the electron density). 相似文献
8.
Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric
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The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage. 相似文献
9.
Influence of a two-dimensional electron gas on current-voltage characteristics of Al<sub>0.3</sub>Ga<sub>0.7</sub> N/GaN high electron mobility transistors
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The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro¨dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region(about 5 nm).For a current density of 7 × 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 × 1017 m-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V. 相似文献
10.
We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure with a high mobility 2-dimensional electron gas (2DEG) in a thin (55 nm) GaAs layer. The optically induced gate voltage between the front gate and the 2DEG is sensitive to excess electron concentrations below 107 cm−2. In the gate voltage spectrum we observe a peak below the bandgap energy of GaAs, which is not observed in the photocurrent, luminescence or excitation spectra. Due to the extremely high sensitivity of this technique we attribute this below bandgap signal to very weak absorption lines below the GaAs bandgap energy by impurity bands or defect absorption. The fall-off of the below bandgap signal varies as exp (hω/E0), where E0 is an indicative for the quality of the heterostructure. 相似文献
11.
We study the evolution of conductance regimes in carbon nanotubes with doubly degenerate orbitals (shells) by controlling the contact transparency within the same sample. For sufficiently open contacts, Kondo behavior is observed for 1, 2, and 3 electrons in the topmost shell. As the contacts are opened more, the sample enters the "mixed valence" regime, where different charge states are strongly hybridized by electron tunneling. Here, the conductance as a function of gate voltage shows pronounced modulations with a period of four electrons, and all single-electron features are washed away at low temperature. We successfully describe this behavior by a simple formula with no fitting parameters. Finally, we find a surprisingly small energy scale that controls the temperature evolution of conductance and the tunneling density of states in the mixed valence regime. 相似文献
12.
Amasha S Rau IG Grobis M Potok RM Shtrikman H Goldhaber-Gordon D 《Physical review letters》2011,107(21):216804
We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully transmitting mode, a system thought to be well described without invoking Coulomb interactions. Below 50 mK we observe a periodic oscillation in the conductance of the dot with gate voltage, corresponding to a residual quantization of charge. From the temperature and magnetic field dependence, we infer the oscillations are mesoscopic Coulomb blockade, a type of Coulomb blockade caused by electron interference in an otherwise open system. 相似文献
13.
为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%. 相似文献
14.
We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage VG in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when VG=−2.2 and −2.0 V for magnetic field H=5 and 7.2 T, respectively. 相似文献
15.
M. Specht M. Sanquer S. Deleonibus G. Guégan 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(4):503-508
We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD
is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and
voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports
the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device.
Received 13 November 2001 and Received in final form 18 February 2002 相似文献
16.
《Current Applied Physics》2007,7(4):338-341
The electrical transport properties of mesoscopic graphite have been investigated in a gate voltage configuration. Few layer graphene structures made from Kish graphite exhibit Shubnikov-de Haas (SdH) oscillations in magnetic fields up to 33 T, with a strong gate voltage dependence. A two band model can be used to explain the linear dependence of the SdH frequency on the gate voltage. The temperature dependence of the SdH oscillation amplitude allows the determination of the effective masses of the carriers, which remain comparable between mesoscopic and bulk graphite samples. However, mesoscopic graphite thinner than 130 nm does not exhibit the field induced charge density wave transition seen in bulk samples above 25 T at low temperatures. 相似文献
17.
Wei-Min Jiang 《中国物理 B》2022,31(6):66801-066801
High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of ~ 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices. 相似文献
18.
A new method of fabricating small metal-molecule-metal junctions is developed, approaching the single-molecule limit. The conductance of different conjugated molecules in a broad temperature, source-drain, and gate voltage regime is reported. At low temperature, all investigated molecules display sharp conductance steps periodic in source-drain voltage. The position of these steps can be controlled by a gate potential. The spacing corresponds to the energy of the lowest molecular vibrations. These results show that the low-bias conductance of molecules is dominated by resonant tunneling through coupled electronic and vibration levels. 相似文献
19.
The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO3/SrTiO3(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO superlattices(SLs)fabricated on the TiO2-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure. 相似文献
20.
GaN基高电子迁移率晶体管(HEMT)作为栅控器件,具有AlGaN/GaN异质结处高浓度的二维电子气(2DEG)及对表面态敏感等特性,在栅位置处与感光功能薄膜的结合是光探测器领域重要的研究方向之一.本文首先提出在GaN基HEMT栅电极上引入光敏材料锆钛酸铅(PZT),将具有光伏效应的铁电薄膜PZT与HEMT栅极结合,提出一种新的"金属/铁电薄膜/金属/半导体(M/F/M/S)"结构;然后在以蓝宝石为衬底的AlGaN/GaN外延片上制备感光栅极HEMT器件.最后,通过PZT的光伏效应来调控沟道中的载流子浓度和通过源漏电流的变化来实现对可见光和紫外光的探测.在365 nm紫外光和普通可见光条件下,对比测试有/无感光栅极的HEMT器件,在较小V_(gs)电压时,可见光下测得前者较后者的饱和漏源电流I_(ds)的增幅不下降,紫外光下前者较后者的I_(ds)增幅大5.2 mA,由此可知,感光栅PZT在可见光及紫外光下可作用于栅极GaN基HEMT器件并可调控沟道电流. 相似文献