硅雪崩光电二极管单光子探测器

将硅雪崩光电二极管应用于盖革模式下,制作出高量子效率、低噪音、短死时间的单光子探测器.设计并制作了雪崩抑制电路,获得探测器特性参量为无源抑制方式下死时间1μs,有源抑制下60～80ns,输出脉冲宽度15～20ns.并详细检测了探测器直到液氮温度下的特性.观察到一些新现象.     

单光子探测器雪崩光电二极管的低温控制系统及其温度特性

根据单光子探测系统的要求及其特点,采用半导体制冷技术,研制出了用于单光子探测的雪崩光电二极管(APD)的水循环散热制冷腔。通过配备测量精度为0.1℃的温控仪,降低了APD的工作环境温度。通过实验探讨了APD的温度特性,得到了APD的雪崩电压、暗电流、光电流、等效噪声功率与温度的关系。结果表明:降低APD的工作温度有利于减小APD的等效噪声功率,APD存在最佳工作温度。     

高时间稳定性的雪崩光电二极管单光子探测器

雪崩光电二极管单光子探测器是一种具有超高灵敏度的光电探测器件,在远距离激光测距、激光成像和量子通信等领域有非常重要的应用.然而,由于雪崩光电二极管单光子探测器的雪崩点对工作温度高度敏感,因此在外场环境下工作时容易出现增益波动,继而导致单光子探测器输出信号的延时发生漂移,严重降低了探测器的时间稳定性.本文发展了一种稳定输出延时的方法,采用嵌入式系统控制雪崩光电二极管,使其处于恒定温度,并实时补偿由环境温度引起的延时漂移,实现了雪崩光电二极管单光子探测器的高时间稳定性探测.实验中,环境温度从16 ℃变化到36 ℃,雪崩光电二极管的工作温度稳定在15 ℃,经过延时补偿,雪崩光电二极管单光子探测器输出延时漂移小于±1 ps,时间稳定度达到0.15 ps@100 s.这项工作有望为全天候野外条件和空间极端条件下的高精度单光子探测应用提供有效的解决方法.     

减小雪崩光电二极管温度影响的研究

本文就如何减小温度对雪崩光电二级管响应度的影响进行了研究。文中从理论上分析了温度以及偏置电压对雪崩光电二极管响应度的影响，并在此基础上提出了两种减小温度影响的可行方法：恒温恒压法和偏置电压温度补偿法，并进行了实验验证     

通讯波段单光子探测器的研制

将InGaAs/InP雪崩光电二极管应用于盖革模式下,采用门脉冲模式淬灭雪崩,并使用魔T混合网络抑制尖峰噪声,实现了通信波段1550 nm的单光子探测.在APD工作温度为223 K时,测得暗计数率与探测效率的比值为0.035.     

Zn扩散对InGaAs/InP单光子雪崩光电二极管雪崩击穿概率的影响

对InGaAs/InP单光子雪崩光电二极管进行结构设计与数值仿真,得到相应的电学与光学参数。针对雪崩击穿概率对器件光子探测效率的影响,研究了两次Zn扩散深度差、Zn扩散横向扩散因子、Zn掺杂浓度以及温度参数与器件雪崩击穿概率的关系。研究发现,当深扩散深度为2.3μm固定值时,浅扩散深度存在对应最佳目标值。浅扩散深度越深,相同过偏压条件下倍增区中心雪崩击穿概率越大,电场强度也会随之增加。当两次Zn扩散深度差小于0.6μm时,会发生倍增区外的非理想击穿,导致器件的暗计数增大。Zn扩散横向扩散因子越大,倍增区中心部分雪崩击穿概率越大,而倍增区边缘雪崩击穿概率会越小。在扩散深度不变的情况下,浅扩散Zn掺杂浓度对雪崩击穿概率无明显影响,但深扩散Zn掺杂浓度越高,相同过偏压条件下雪崩击穿概率越小。本文研究可为设计和研制高探测效率、低暗计数InGaAs/InP单光子雪崩光电二极管提供参考。     

基于雪崩光电二极管的弱光探测技术研究

通过采用无源抑制方法对雪崩光电二极管的弱光探测技术进行了研究,分析了工作在盖革模式下的InGaAs APD的特性。利用APD两端的偏置电压VB在其雪崩后趋于稳定的特性,确定了其雪崩暗击穿电压,并且在水冷温控系统中,测得了APD雪崩暗击穿电压与温度的关系。结果表明,APD的雪崩暗击穿电压随着温度的上升而增大,光子群(弱光)到达时,APD探测到的在某一幅值处的脉冲数明显增加,其脉冲幅度也将增大。     

低过偏压下高增益单光子雪崩二极管的设计与验证

单光子雪崩二极管(SPAD)可以检测到异常微弱的光信号,可广泛应用于目标跟踪、自动驾驶、荧光检测等领域。本文基于180 nm标准双极-互补金属氧化物半导体-双扩散金属氧化物半导体(BCD)工艺,设计了一种低过偏压下具有高光子检测概率(PDP)的SPAD器件。该器件在440～740 nm范围内具有良好的光谱响应。采用半径为10μm的N+/P阱形成PN结作为感光区域,由N阱形成一个能有效防止边缘击穿的保护环。应用计算机技术辅助设计(TCAD)软件对SPAD的基本工作原理进行了定性分析,并通过建立的测试平台获得了设备的实际电气参数。测试结果表明,在1 V的过量偏置电压下,在480～660 nm的波长范围内,该器件可达到30%以上的PDP。在560 nm时,PDP峰值为42.7%,暗计数率为11.5 Hz/μm²。最后通过设计VerilogA混合模型验证了器件的模拟结果和实测结果之间具有良好一致性。     

基于Royer振荡器的硅基雪崩光电二极管偏压电路

针对雪崩光电二极管（Si-APD）所加偏压需要随环境温度作调整,且偏压电路所需的低纹波低噪声等因素,构建了以Royer振荡器和微控制器为核心的偏压电路。该Si-APD偏压电路以BL8032型同步降压控制器作为Royer振荡器的输入电源,以MS5221M型DAC作为该输入电源的调整单元,以AD8606型集成运放和AD7980型ADC作为Royer振荡器输出电压采样单元,以STM32F103TBU6型微控制器作为计算与时序控制单元。本偏压电路不仅具有温度自适应性,而且具有低纹波、低噪声、低功耗和电气安全隔离的特点,能在9～36 VDC宽输入电压范围和-40～70℃环境下良好工作。     

近红外单光子探测器

该单光子探测器在实验中使用半导体制冷器制冷，雪崩二极管工作于盖革模式下，使用交流耦合方式提供门脉冲信号，通过延迟补偿和采样门控消除尖脉冲干扰，采用反馈门控减小后脉冲影响，优化电路参数减小暗计数.经实验测试与分析，温度在-62.5℃，门脉冲宽度为50ns，采样门控为10ns的条件下，最佳工作点的暗计数率小于4×10^-6ns^-1，量子效率约18%，噪声等效功率为2.4×10^-19W/Hz^1/2.     

The analysis of the integral gated mode single photon detector

This paper critically analyses and simulates the circuit configuration of the integral gated mode single photon detector which is proposed for eliminating the transient spikes problem of conventional gated mode single photon detector. The relationship between the values of the circuit elements and the effect of transient spikes cancellation has been obtained. With particular emphasis, the bias voltage of the avalanche photodiode and the output signal voltage of the integrator have been calculated. The obtained analysis results indicate that the output signal voltage of the integrator only relates to the total quantity of electricity of the avalanche charges by choosing the correct values of the circuit elements and integral time interval. These results can be used to optimize the performance of single photon detectors and provide guides for the design of single photon detectors.     

The effect of temporal separation of two Geiger mode avalanche photodiodes and variation of time bin widths on detection probabilities in LADAR system using two Geiger mode avalanche photodiodes

In this paper, the effect of temporal separation of two Geiger mode avalanche photodiodes and the variation of time bin widths on detection probabilities in LADAR system using two Geiger mode avalanche photodiodes (GmAPDs) was investigated. The system is implemented by using two GmAPDs with a beam splitter and applying comparative process to their ends. Then, the timing circuitry receives the electrical signals only if each GmAPD generates the electrical signals simultaneously. Although this system decreases the energy of a laser-return pulse scattered from the target, it is highly effective in reducing the false alarm probability because of the randomly distributed noise on the time domain. The temporal separation of two GmAPDs and the variation of the time bin widths result in the variation of detection probabilities. The experiments were performed to verify the effect of temporal separation of two GmAPDs and the variation of time bin widths on the detection probability in the LADAR system. As a result, the optimal temporal difference and the optimal time bin width were. Using these optimal values, a clear 3D image could be obtained by the simple acquisition of the raw time-of-flight data with high SNR.     

The intensity detection of single-photon detectors based on photon counting probability density statistics

Single-photon detectors possess the ultra-high sensitivity, but they cannot directly respond to signal intensity. Conventional methods adopt sampling gates with fixed width and count the triggered number of sampling gates, which is capable of obtaining photon counting probability to estimate the echo signal intensity. In this paper, we not only count the number of triggered sampling gates, but also record the triggered time position of photon counting pulses. The photon counting probability density distribution is obtained through the statistics of a series of the triggered time positions. Then Minimum Variance Unbiased Estimation(MVUE) method is used to estimate the echo signal intensity. Compared with conventional methods, this method can improve the estimation accuracy of echo signal intensity due to the acquisition of more detected information. Finally, a proof-of-principle laboratory system is established. The estimation accuracy of echo signal intensity is discussed and a high accuracy intensity image is acquired under low-light level environments.     

Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes

We fabricated 4H-SiC ultraviolet avalanche photodiode(APD) arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs. Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching, it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance deg...     

H 离子辐照对 NbN 薄膜的微观结构和超导性能影响

氮化铌(NbN) 低温超导薄膜是用于制作超导器件的典型材料. 基于 NbN 超导薄膜的超导纳米线单光子探测器(SNSPD) 在量子通信、 暗物质探测、 激光测距等领域都有着广泛应用. 本工作借助中国科学院兰州近代物理所320 kV 低能重离子综合研究平台采用300-keV H1 + 离子对7 nm 厚度的低温超导材料 NbN 超薄膜进行了离子辐照, 得到了辐照前后超导转变温度Tc 及超导能隙 Δ(0) 、 费米面附近电子态密度 N0 等其他材料参数的变化, 为借助离子辐照手段改善 NbN SNSPD 性能提供了实验参考.     

同轴电缆反射方案单光子探测器的特性研究

分析了用于消除门控单光子探测器电尖峰噪声的同轴电缆反射方案的特性.重点分析了该方案中,雪崩光电二极管的偏置电压和输出信号的变化特性.根据理论分析的结果,给出了不同的单光子信号与两个门控脉冲的时序关系的确定依据,以及该方案对电尖峰噪声的消除效果,同时给出了探测系统的最小探测周期.并对理论分析的结果进行了实验验证,实验中测得尖峰噪声的抑制比为25.1dB,实验结果与理论分析相符.这些分析结果将有助于红外单光子探测器的设计和性能的优化.     

Characteristics of InAlGaAs/InAlAs Superlattice Avalanche Photodiodes for Ultra-low Optical Power Detection in the Near Infrared

Static characteristics of two different structured InAlGaAs/InAlAs superlattice avalanche photodiodes (SLAPDs) cooled by liquid nitrogen were evaluated at a wavelength of 1.5 μm. The dark current of the SLAPD having a thick superlattice layer of 0.504 μm was 5 × 10⁻¹³ A. This was successively reduced by four orders of magnitude compared to that of the thin layer SLAPD of 0.231 μm at a breakdown voltage of around 20 V. The thickened layer was effective in suppressing tunneling dark current. An output current of 1.7×l0⁻¹² A at a bias voltage of 15 V was measured for an optical input with a wavelength of 1.5 μm and a signal power of 1 × 10⁻¹² W. This showed a sharp distinction from the dark current.     

单模光纤中受激拉曼散射的阈值特性研究

理论分析并仿真了单模光纤中前向和后向拉曼Stokes光功率随输入抽运光功率的变化规律,发现其具有明显的阈值特性。由此提出了一种新的单模光纤拉曼阈值的定义,将拉曼Stokes光功率随输入抽运光功率变化曲线的二阶微分的最大值对应的输入抽运光功率定义为单模光纤拉曼阈值,还给出了与之相应的单模光纤拉曼阈值的测量方法,通过对单模光纤拉曼阈值随单模光纤特征参数的变化规律进行仿真和拟合,分别获得了单模光纤中前向和后向拉曼阈值方程。搭建了实验平台,采用脉冲光抽运,对长度为24km的单模光纤中前向和后向受激拉曼散射的阈值特性进行了实验验证,结果表明,实验结果与理论分析和仿真结果相符合,验证了所提出的阈值定义和测量方法的有效性,实验中还发现,在不同的光纤特征参数下,单模光纤后向拉曼散射阈值比前向时平均提高了24.9%,与理论仿真结果的25.3%相符合,表明单模光纤中前向受激拉曼散射更容易产生。     

量子点场效应单光子探测器二维电子气载流子浓度研究

设计了一种基于场效应晶体管的量子点场效应单光子探测器(quantum dot field effect transistor,QDFET),建立了二维电子气(two-dimensional electron gas,2DEG)的薛定谔方程和泊松方程,通过对薛定谔方程和泊松方程的自洽求解,对2DEG的载流子浓度进行了模拟。模拟结果显示,AlGaAs的Al组分、δ掺杂层的掺杂浓度以及隔离层的厚度对于2DEG的载流子浓度均有影响。为了使2DEG具有较高的载流子浓度,AlGaAs的Al组分应为0.2~0.4,δ掺杂浓度应为6~8×10~(13)/cm~2,隔离层厚度应在50nm以下。通过对2DEG的载流子浓度进行研究,可以掌握2DEG载流子浓度的影响因素,从而通过优化QDFET结构,可提高2DEG的载流子浓度。这对于高灵敏度QDFET的制备具有重要的意义和应用价值。     

单光子探测器量子效率绝对自身标定方案

参考已有的方案,提出了一种更简单的方案来实现单光子探测器量子效率的绝对自身标定。我们利用同轴线缆和数据采集卡代替已有方案中的符合测量电路和计数器,通过精确设定同轴线缆的长度,利用电脉冲在同轴线缆的短路终端反射回波的特性,对一个测量周期中单个脉冲和连续两个脉冲进行区分,用数据采集卡记录区分结果,分别得到探测器探测到两个孪生光子的计数和仅探测到其中任意一个光子的计数,从而算出单光子探测器的量子效率。此方案不需要其他任何的参考标准或者另一个探测器.