纳米金丝的生长序列、奇特结构和性质

文章扼要报道了用遗传算法和分子动力学以及密度泛函理论对纳米金丝的结构和电子性质随直径变化进行系统研究的结果,发现对于较细的纳米金丝、主要呈螺旋和多层壁的圆柱结构,而当纳米金丝的直径大于3mm时,则呈fcc块体类结构,并且晶化过程是从轴心开始的,振动谱和电子性质和也随纳米金丝半径增大而由分子型向块体行为转变。     

轴向拉伸对Ni纳米线结构和稳定性的影响

采用推广模拟退火算法和Sutton Chen势, 选取fcc[111]结构的Ni纳米线为初始构型, 研究了轴向拉伸对Ni纳米线的结构和稳定性的影响。 研究结果表明: 拉伸程度的大小对Ni纳米线的结构和稳定性有很大的影响; 随着拉伸强度的变化, 纳米线结构分别为fcc[111]结构、 (6, 0)型管＋中心柱状结构（又为螺旋结构）、 (6, 3) 型管＋中心柱状结构、 fcc[110]结构、 过渡结构（为规则结构）和缺陷结构; 从结合能分布来看, 结合能先减小, 再增大, 结合能最小时对应最稳定结构 (6, 0) 型管＋中心柱状结构（又为螺旋结构）。 Atomic structures and stabilities of Ni nanowires are studied by using the generalized simulated annealing method with Sutton Chen potential. The initial structure is face centered cubic [111] structure. The result shows that the length of the supercell strongly affects the structures and stabilities of Ni nanowires. fcc [111] structure, (6, 0), (6, 3) nanowires, fcc[110], transition structure and defect structure are found for different wire lengths. And from the analyses of the binding energy, it is found that (6, 0) nanowires (helical structure) is the most stable form.     

Quantum confinement and electronic properties of tapered silicon nanowires

Using ab initio calculations, structural tapering of silicon nanowires is shown to have a profound effect on their electronic properties. In particular, the electronic structure of small-diameter tapered silicon nanowires is found to have a strong axial dependence, with unoccupied eigenstates being substantially more sensitive to diameter. Moreover, the states corresponding to the highest occupied and the lowest unoccupied states are spatially separated along the wire axis by the tapering-induced charge transfer and a strong electrostatic potential gradient, due to an appreciable variation in quantum confinement strength with diameter.     

Structural stability and electronic properties of GaSb nanowires

The structural stability and electronic properties of four different shapes of GaSb nanowire have been studied by ab-initio method using the generalized gradient approximations. The different structures were two atom linear wire, two atom zigzag wire, four atom square wire and six atom hexagonal wire. The geometry optimization and the stability of all nanowires were investigated. We explore the minimum energy atomic configuration for all the considered shapes. We find that four atom square wire configuration has greater stability in comparison to other shapes. The analysis of density of states and band structures of optimized nanowires predicts that semiconducting nanowires may be metallic or semiconducting. The behavior entirely depends upon the geometrical structure.     

Ni纳米线的结构和性质研究

采用推广模拟退火算法(Generalized Simulated Annealing,GSA)和Sutton-Chen势,研究了初始构型为面心立方(fcc)结构的Ni纳米线,在沿径向压缩时的结构和性质.结果表明:径向压缩程度对Ni纳米线的结构有很大的影响.当Ni纳米线直径大于0.398nm时(初始直径为0.498nm),其结构由fcc结构变为类似fcc结构,但结合能变化很小,表明其结构之间几乎可以实现零能量转换,且稳定性基本不变;当Ni纳米线直径小于0.398nm时,其结构从无定形结构变为缺陷结构,结合能迅速上升,表明其结构稳定性降低;键角的分布也证明了以上结果的正确性.     

Dimensionally,morphologically, and thermally induced phase transformations in boron-nitrogen nanowires

Structural, thermal, electronic, and energetic properties of cubic boron nitride (BN) nanowires are studied using the density-functional tight-binding method. The effect of the total or partial rearrangement of the cubic structure of nanowires into the hexagonal one depending on the size, morphology, and thermal treatment of the starting wire has been revealed. As distinct from the known homogeneous carbon diamond-like nanowires, stable BN nanowires are two-phase systems whose “shell” has a hexagonal structure and “core” has a cubic structure. The changes in the electronic properties of BN nanowires induced by their structural transformations are discussed. It is shown that boron-nitrogen nanowires can exhibit both semiconducting and metallic properties.     

表面钝化效应对GaAs纳米线电子结构性质影响的第一性原理研究

纳米线表面存在大量的表面态,它们能够引起电子分布在纳米线表面,使得纳米线的电学性质对表面条件变得更加敏感,严重地制约器件的性能.表面钝化能够有效地移除纳米线的表面态,进而能够有效地优化器件的性能.采用基于密度泛函理论的第一性原理计算方法研究了表面钝化效应对GaAs纳米线电子结构性质的影响.考虑了不同的钝化材料,包括氢元素、氟元素、氯元素和溴元素.研究结果表明:具有小尺寸的GaAs裸纳米线的能带结构呈间接带隙特征,表面经过完全钝化后,转变为直接带隙特征;GaAs纳米线表面经过氢元素不同位置和不同比例钝化后,展示出不同的电学性质;表面钝化的物理机理是钝化原子与纳米线表面原子通过电荷补偿移除纳米线表面的电子态;与氢元素钝化相比,GaAs纳米线表面经过氟元素、氯元素和溴元素钝化后,带隙宽度较小,原因是氟元素、氯元素和溴元素在钝化过程中具有较小的电荷补偿能力,不能完全移除表面态.     

Magnetic anisotropy and domain patterns in electrodeposited cobalt nanowires

The magnetic anisotropy and domain structure of electrodeposited cylindrical Co nanowires with length of 10 or 20 μm and diameters ranging from 30 to 450 nm are studied by means of magnetization and magnetic torque measurements, as well as magnetic force microscopy. Experimental results reveal that crystal anisotropy either concurs with shape anisotropy in maintaining the Co magnetization aligned along the wire or favours an orientation of the magnetization perpendicular to the wire, hence competing with shape anisotropy, depending on whether the diameter of the wires is smaller or larger than a critical diameter of 50 nm. This change of crystal anisotropy, originating in changes in the crystallographic structure of Co, is naturally found to strongly modify the zero (or small) field magnetic domain structure in the nanowires. Except for nanowires with parallel-to-wire crystal anisotropy (very small diameters) where single-domain behaviour may occur, the formation of magnetic domains is required to explain the experimental observations. The geometrical restriction imposed on the magnetization by the small lateral size of the wires proves to play an important role in the domain structures formed. Received 14 September 2000     

First principles study on the electronic structure and effect of vanadium doping of BN nanowires

The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.     

Magnetic coupling in Co1−xPtx (x>0.5) nanowires electrodeposited on an AAO template

Thirty nanometer diameter Co-Pt nanowires of different composition were fabricated by electrodepositing the Co and Pt atoms to nanoporous anodized aluminium oxide (AAO) templates. The structure and magnetic properties are studied by transmission electron microscopy (TEM), induction-coupled plasma spectrometer (ICP), X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). The as deposited nanowires with Pt content about 50 at.% present a single ferromagnetic phase of fcc CoPt. When the Pt content of the nanowires varies from about 55 to about 75 at.%, the nanowires include a soft phase of fcc CoPt₃ and a relatively hard phase of fcc CoPt and the two phases are separate as seen from the hysteresis loops. After annealing to 600 °C, the two phases coupled completely and the coupled phase has the same coercivity as the original hard one.     

量子局域效应和应力对GaSb纳米线电子结构影响的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法, 研究了不同晶体结构和尺寸的GaSb纳米线能带结构特性和载流子的有效质量, 以及单轴应力对GaSb纳米线能带结构的调控. 研究结果表明: 闪锌矿结构[111]方向和纤锌矿结构[0001]方向的小尺寸GaSb纳米线均出现间接带隙的能带结构, 并可通过单轴应力来实现纳米线能带结构由间接带隙到直接带隙的转变, 其中, 闪锌矿结构[111]方向GaSb纳米线仅在受到单轴拉伸应力时才发生能带由间接带隙到直接带隙的转变, 而纤锌矿结构[0001]方向GaSb纳米线无论受单轴拉伸还是压缩应力的作用均可实现能带由间接带隙到直接带隙的转变; [111]和[0001]方向GaSb纳米线的带隙和载流子有效质量与纳米线直径呈非线性关系, 并随纳米线直径的减小而增大; 同一方向和尺寸的GaSb纳米线, 其空穴有效质量要小于电子有效质量, 这表明小尺寸GaSb纳米线有利于空穴载流子输运.     

Nanowire formation by coalescence of small gold clusters inside carbon nanotubes

The coalescence of Au₁₃, Au₅₅ and Au₁₄₇ icosahedral clusters encapsulated inside single walled carbon nanotubes (CNTs) of different diameters are investigated using molecular dynamics simulation with semi-empirical potentials. Three steps needed for the formation of encapsulated nanowires are followed in detail, namely, the penetration of clusters in CNTs, the coalescence between two clusters inside CNTs and their accumulation to form wires. It is suggested that no significant energy barrier is encountered during the penetration of free clusters into CNTs provided the CNT radius is large enough, that is, about 0.3 nm larger than the cluster radius. The relative orientation of clusters imposed by the CNT favors their spontaneous coalescence. After coalescence of two clusters, the Au atoms are rearranged to form new structures of cylindrical symmetry that may be seven fold, six fold, five fold, helical or fcc depending on the CNT diameter. The thermal stability of these structures is discussed and the structural properties of nanowires formed by accumulation of many clusters in CNTs are analyzed in detail. A geometrical method is presented which allows the prediction of the structure of multi-shell helical wires, when knowing only the CNT radius. These modeling results suggest the possibility of synthesizing metallic nanowires with controlled diameter and structure by embedding clusters into nanotubes with suitable diameters.     

Study of the in-plane and c-axis fluctuation conductivity of melt-textured YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7</Subscript> under hydrostatic pressure

Strongly confined nano-systems, such as one-dimensional nanowires, feature deviations in their structural, electronic and optical properties from the corresponding bulk. In this work, we investigate the behavior of long-wavelength, optical phonons in vertical arrays of InAs nanowires by Raman spectroscopy. We attribute the main changes in the spectral features to thermal anharmonicity, due to temperature effects, and rule out the contribution of quantum confinement and Fano resonances. We also observe the appearance of surface optical modes, whose details allow for a quantitative, independent estimation of the nanowire diameter. The results shed light onto the mechanisms of lineshape change in low-dimensional InAs nanostructures, and are useful to help tailoring their electronic and vibrational properties for novel functionalities.     

氧化锌/硫化锌异质纳米线结构和电子性质比较研究

用第一性原理方法系统研究氧化锌/硫化锌超晶格纳米线和核壳结构纳米线的结构和电子性质.结构优化后,氧化锌/硫化锌异质结构纳米线和纯氧化锌或硫化锌纳米线结构相似.对于两种异质结构纳米线,能带结构显示他们都是直接带隙半导体.对于氧化锌/硫化锌超晶格纳米线,随着径向厚度的增加,能带变的越来越水平.对于核壳结构纳米线,分波态密度显示它们都是Ⅱ型异质结构.研究有助于理解这类异质结构纳米线以及它们在电子发动机及光伏设备方面的应用.     

Atomic and electronic structure of mixed Au-Co nanowires: Ab initio molecular dynamics study

The atomic and electronic structure of uniformly and nonuniformly mixed Au-Co nanowires have been studied using the ab initio molecular dynamics method. The effect of elastic stretching/contraction deformations on the stability and electronic properties of mixed Au-Co nanowires has been studied. It is established that Co dimers are formed in a nonuniformly mixed nanowire. The formation of CO₂ dimers results in a non-uniform distribution of the electron density and interactomic distances along the wire and leads to accelerated rupture of the wire between Au atoms under stretching. Only a uniformly mixed Au-Co nanowire composed of regularly alternating Au and Co atoms is stable under stretching up to large interactomic distances.     

Study of the effect of varying core diameter,shell thickness and strain velocity on the tensile properties of single crystals of Cu–Ag core–shell nanowire using molecular dynamics simulations

Core–shell type nanostructures show exceptional properties due to their unique structure having a central solid core of one type and an outer thin shell of another type which draw immense attention among researchers. In this study, molecular dynamics simulations are carried out on single crystals of copper–silver core–shell nanowires having wire diameter ranging from 9 to 30 nm with varying core diameter, shell thickness, and strain velocity. The tensile properties like yield strength, ultimate tensile strength, and Young’s modulus are studied and correlated by varying one parameter at a time and keeping the other two parameters constant. The results obtained for a fixed wire size and different strain velocities were extrapolated to calculate the tensile properties like yield strength and Young’s modulus at standard strain rate of 1 mm/min. The results show ultra-high tensile properties of copper–silver core–shell nanowires, several times than that of bulk copper and silver. These copper–silver core–shell nanowires can be used as a reinforcing agent in bulk metal matrix for developing ultra-high strength nanocomposites.     

Characterization of CoPt nanowire fabricated by glancing angle deposition

CoPt and Co nanowire films were deposited by the Glancing Angle Deposition(GLAD) method. All samples are deposited on Si substrates that were covered by polystyrene spheres to assist the alignment of nanowires. SEM observation results show that the length and diameter of nanowires are uniform for all samples. According to the result of XRD, the crystal structure of CoPt is fcc. The angular dependence of magnetization of the nanowires shows that the easy axis of magnetization is along the growth direction of the nanowires.     

Electronic structure of twinned ZnS nanowires

The electronic properties of twinned ZnS nanowires (NWs) with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin ZnS NWs.     

原子尺度金属纳米线的结构和性质

当物质尺度减少到几层原子时，形成超细的纳米结、纳米线、或者纳米团簇，原有凝聚态物质的结构和物理性质将不再保持，而呈现出许多令人惊奇的奇异特性。本文重点讨论直径大约3nm以下，具有足够长度的、原子结构往往不同于体材料的准一维金属纳米结构，我们称之为原子尺度金属纳米线或超细金属纳米线（也称为金属原子线）。近年来实验上已经制备和表征出在超高真空中悬挂在两个顶针尖端的Au、Pt、Cu等金属纳米线和纳米管，金属线直径达到1nm以下而长度为6nm以上。通过高分辩电子显微镜观察，它们是同轴圆管（或壳）组成的、类似纳米碳管的单壳或多壳结构，管由绕着线轴的螺旋原子绳构成。理论工作围绕这种新奇结构形态的形成机制、奇异的物理性质和可能的应用前景而同时展开。这是一个崭新的纳米世界，无论是对基础的低维物理还是未来分子电子设备的应用，都将产生深远的影响，有许多奇妙的现象正等待人们去发现。本文将对最近几年原子尺度金属纳米线研究工作的主要进展和发展趋势作一个概述，并重点介绍本组有关的具有螺旋结构的纳米线的各类新奇结构和物理性质。