Relationship between electronic and crystal structure in Cu–Ni–Co–Mn–O spinels: Part A: Temperature-induced structural transformation

Local atomic and crystal structures around Cu and Mn atoms in Mn_1.68Cu_0.6Ni_0.48Co_0.24O₄ spinel samples fabricated by metal–organic decomposition synthesis at different annealing temperatures were investigated by X-ray absorption fine structure analysis. There are two distinct copper cations, Cu¹⁺ and Cu²⁺, both of which maintain tetrahedral coordination. The bond-length distances are Cu¹⁺–O = 2.00 Å and Cu²⁺–O = 1.80 Å. The manganese cations are for the most part octahedral. The spinels prepared at low temperature (600 °C) contain smaller (Mn⁴⁺–O = 1.88 Å) undistorted MnO₆ octahedrons corresponding to Mn⁴⁺ valence, whereas the manganese octahedrons in high-temperature materials (800 °C and higher) were larger and had a pronounced tetragonal distortion pertaining to Mn³⁺ oxidation state (Mn³⁺–O = 1.93 Å and 2.11 Å). By rising the fabrication temperatures, relative concentration of the species of Mn⁴⁺ and Mn³⁺ varies as a result of the reaction represented by Cu¹⁺ + Mn⁴⁺  Cu²⁺ + Mn³⁺, implying irreversible temperature-induced structural transformation. Atomic coordinates in the low-temperature phase are similar to those found in the ideal cubic spinel with oxygen parameter u = 0.27, whereas local environments of the Cu and Mn atom correspond to the tetragonal CuMn₂O₄ phase (space group I4₁/amd). Unlike in CuMn₂O₄, orientation of the lattice distortions is random, however, the long-range cubic spinel structure is retained at all time.     

Photo-operated two-photon absorption effects in the GeSe2–Ga2S3–PbI2 glasses

The possibility to operate the two-photon absorption (TPA) of newly synthesized GeSe₂–Ga₂S₃–PbI₂ glasses using the CO laser beam (λ=5.5 μm) as a photoinducing one has been demonstrated. As the fundamental laser beam we have used the illumination of 10.6 μm passively modulated 0.5 ns CO₂ laser with a rate repetition of about 10 Hz. We have established that the maximal photoinduced TPA is observed for the 8% doped samples (up to 14 cm/GW), which is achieved at a pump CO laser pump power density equal to about 0.6 GW/cm². The undoped PbI₂ samples show the TPA maximum at a pump power density of about 0.2 cm/GW. The minimal TPA values were observed for the samples with 5% of PbI₂. The obtained results show that these materials can be used as effective optically operated optical limiters.     

Properties of solvent-free perylene iodine

The perylene iodine system was prepared by a vapour-phase reaction without the use of solvents. Compositions between peryleneI₂ and peryleneI₆ were synthesized and studied by gravimetric analysis, infrared spectroscopy, X-ray diffraction and temperature-dependent resistivity measurements. Infrared spectra in the region 400–4000 cm⁻¹ taken after different amounts of iodine were removed from the sample are distinct from perylene with new absorption lines at 1551 and 1302 cm⁻¹ and shifts of some perylene frequencies. Powder X-ray diffraction measurements indicate that the lattice is monoclinic with parameters a=11.65 Å, b=10.85 Å, c=10.1 Å, β=100.5°. The (1 0 0) reflection, which is forbidden in the space group of perylene, is observed from the compound. The material is electrically conductive and obeys Ohm's law at high temperatures. At low temperatures and high currents, nonlinear effects are observed. The conductivity of the material increases to 1.0 (Ω cm)⁻¹ at room temperature as the iodine content increases to a composition of peryleneI₆. The resistivity obeys an exponential temperature dependence.     

LEED structure determination of the Ni(1 1 1)(√3×√3)R30°-Sn surface

Quantitative low energy electron diffraction has been used to determine the structure of the Ni(1 1 1)(√3×√3)R30°-Sn surface phase. The results confirm that the surface layer comprises a substitutional alloy of composition Ni₂Sn as previously found by low energy ion scattering (LEIS), and also shows that there is no stacking fault at the substrate/alloy interface as has been found in (√3×√3)R30°-Sb surface alloys on Ag and Cu(1 1 1). The surface alloy layer is rumpled with the Sn atoms 0.45 ± 0.03 Å higher above the substrate than the surrounding Ni atoms. This rumpling amplitude is almost identical to that previously reported on the basis of the LEIS study. Comparison with similar results for Sn-induced surface alloy phases on Ni(1 0 0) and Ni(1 1 0) shows a clear trend to reduced rumpling with reduced surface atomic layer density, an effect which can be rationalised in terms of the different effects of valence electron charge smoothing at the surface.     

An investigation of the Si(111)−(√3 × √3)R30°−Ag surface by Li impact collision ion scattering spectroscopy

The Si(111)−(√3 × √3)R30°−Ag surface has been investigated using the technique of Li⁺ impact collision ion scattering spectroscopy. Typical LEED √3 domain sizes were estimated to be on the order of 150 Å for a 1 ML coverage of Ag, with the √3 structure persisting for coverages of Ag up to 35 ML. Silver islanding was found to influence the appearance of the 5 keV Li⁺ ICISS angular scans even for 1 ML coverages of Ag deposited at 480°C. A detailed structural analysis of the Si(111)−√3−Ag surface (0.25 ML deposition) involved the comparison of 5 keV Li⁺ ICISS experimental data along the [11 ], [ 10] and [2 1] azimuths with computer simulations of the scattered ion intensities based on previously proposed models for the √3 surface. Nine structurally different models were tested, and only the missing-top-layer (MTL) and the honeycomb-chained-trimer (HCT) models were found to be consistent with all the experimental results. An estimate of 0.4 Å for the maximum downward vertical displacement of the Ag atoms with resect to the surface Si atoms in the MTL model is made. The effects of increased thermal vibrational amplitude in the simulation of Si---Ag shadowing effects is also discussed. The interpretations of previous noble gas ICISS results are shown to be inconsistent with the present alkali metal ICISS study of the √3 surface.     

Structural properties of diamond fine particles and clusters prepared by detonation and decomposition of TNT

The thermal parameter B for three different particle sizes of diamond samples (bulk powder 1–4 μm, fine particle 144–195 Å and cluster 55–61 Å) was determined by the grazing incidence X-ray diffraction method. The values of B were found to be in the range 0.50–0.70 Å² for particles in the size range 195–55 Å and 0.27 Å² for 1–4 μm. All of them are larger than that of diamond bulk. A clear size dependence of B, increasing with decreasing particle size, was found. By analysing X-ray diffraction data at several temperatures the magnitude of B was found to be due to B_S (static part) instead of B_T (dynamic part). The average B_S values obtained were 0.04 Å², 0.19 Å² and 0.27 Å² for bulk powder, fine particle and cluster samples respectively. Ultrahigh resolution transmission electron microscope (TEM) observation confirmed the presence of strain, distortion, roughness and dislocation lines in many particles. TEM images of particles indicate that the clusters were not spherical in shape; they were mostly cubiform and some were truncated prism-like polyhedral. The present study reveals that the B_S component is responsible for the large B value in diamond fine particles and clusters. No clear surface local atomic distortion was found in the particles.     

Buffers for high temperature superconductor coatings. Low temperature growth of CeO2 films by metal–organic chemical vapor deposition and their implementation as buffers

Smooth, epitaxial cerium dioxide thin films have been grown in-situ in the 450–650°C temperature range on (001) yttria-stabilized zirconia (YSZ) substrates by metal–organic chemical vapor deposition (MOCVD) using a new fluorine-free liquid Ce precursor. As assessed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM), the epitaxial films exhibit a columnar microstructure with atomically abrupt film-substrate interfaces and with only minor bending of the crystal plane parallel to the substrate surface near the interface and at the column boundaries. With fixed precursor temperature and gas flow rate, the CeO₂ growth rate decreases from 10 Å/min at 450°C to 6.5 Å/min at 540°C. The root-mean-square roughness of the films also decreases from 15.5 Å at 450°C to 4.3 Å at 540°C. High-quality, epitaxial YBa₂C₃O_7−x films have been successfully deposited on these MOCVD-derived CeO₂ films grown at temperatures as low as 540°C. They exhibit T_c=86.5 K and J_c=1.08×10⁶ A/cm² at 77.4 K.     

Adsorption of hydrogen and carbon monoxide on Rh(1 1 1)/V surface alloys

A detailed study of the interaction of hydrogen and carbon monoxide with two different Rh(1 1 1)/V surface alloys (1/3 monolayer of V in the second atomic layer or 1/3 monolayer of V in form of islands on the surface) is presented in comparison to the clean Rh(1 1 1) surface. For hydrogen a decrease in the sticking coefficient is found for both alloy surfaces. The sticking coefficient of H₂ as a function of the translational energy is similar to the Rh(1 1 1) surface, showing a direct activated adsorption mechanism. For low translational energies hydrogen adsorption is dominated by dynamical steering on Rh(1 1 1) and by a precursor mechanism on the Rh(1 1 1)/V subsurface alloy. The H₂ TPD desorption peaks are shifted to lower temperatures on the alloy surfaces, caused by the downshift of the metal d-band due to V alloying. On all three surfaces the saturation coverage of hydrogen was measured, giving 1.2, 1.0 and 0.8 monolayer for Rh(1 1 1), the Rh(1 1 1)/V subsurface alloy and for the Rh(1 1 1)/V islands, respectively. For CO the sticking coefficients and the saturation coverages are basically the same on the Rh(1 1 1) and the alloy surfaces. There is an extrinsic precursor on the ordered CO (√3×√3) phase on the Rh(1 1 1) surface, but there is no evidence for such a precursor on the Rh(1 1 1)/V subsurface alloy. On the Rh(1 1 1)/V islands surface, the extrinsic precursor exists on the Rh(1 1 1) surface between the V islands. Apparently this precursor is only stable on the ordered CO layer on Rh(1 1 1).     

Surface properties of Hafnium diboride(0 0 0 1) as determined by X-ray photoelectron spectroscopy and scanning tunneling microscopy

The surface structure and properties of the HfB₂(0 0 0 1) (Hafnium diboride, HfB₂) surface have been investigated with X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Annealing temperatures above 1900°C produce a sharp (1×1) LEED pattern, which corresponds to STM images showing flat (0 0 0 1) terraces with a very low contamination level separated by steps 3.4 Å in height, corresponding to the separation of adjacent Hf planes in the HfB₂ bulk structure. For lower annealing temperatures, extra p(2×2) spots were observed with LEED, which correspond to intermediate terraces of a p(2×1) missing row structure as observed with STM.     

The structure of oxygen on Cu(1 0 0) at low and high coverages

The local adsorption structure of oxygen on Cu(1 0 0) has been studied using O 1s scanned-energy mode photoelectron diffraction. A detailed quantitative determination of the structure of the 0.5 ML (√2×2√2)R45°-O ordered phase confirms the missing-row character of this reconstruction and agrees well with earlier structural determinations of this phase by other methods, the adsorbed O atoms lying only approximately 0.1 Å above the outermost Cu layer. At much lower coverages, the results indicate that the O atoms adopt unreconstructed hollow sites at a significantly larger O–Cu layer spacing, but with some form of local disorder. The best fit to these data is achieved with a two-site model involving O atoms at Cu–O layer spacings of 0.41 and 0.70 Å in hollow sites; these two sites (also implied by an earlier electron-energy-loss study) are proposed to be associated with edge and centre positions in very small c(2×2) domains as seen in a recent scanning tunnelling microscopy investigation.     

Elemental steps in the growth of thin β-Ga2O3 films on CoGa(1 0 0)

The oxidation of CoGa(1 0 0) at 700 K was studied by means of high resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy, low energy electron diffraction and Auger electron spectroscopy (AES). At 700 K, thin well-ordered β-Ga₂O₃ films grow on CoGa(1 0 0). The EEL spectrum of the Ga-oxide films exhibit Fuchs–Kliewer phonons at 305, 455, 645, and 785 cm⁻¹. For low oxygen exposure (<0.2 L), the growth of oxide-islands starts at step edges and on defects. The oxide films have the shape of long, rectangular islands and are oriented in the [1 0 0] and [0 1 0] directions of the substrate. For higher oxygen exposure, islands of β-Ga₂O₃ are found also on the terraces. After an exposure of 200 L O₂ at 700 K, the CoGa(1 0 0) surface is homogeneously covered with a thin film of β-Ga₂O₃.     

A 62 K superconductor with an original structure: Sr4−xBaxTlCu2CO3O7

A new superconductor with an original structure, Sr_4−xBa_xTlCu₂CO₃O₇ has been isolated for 1≤x≤2. It crystallizes in a A-type space group with a=3.84 Å≈a_p, b≈8 × a_p, c≈17.0 Å. The HREM study of this new curprate shows that it derives from the Tl_0.5Pb_0.5Sr₄Cu₂CO₃O₇ structure by a shearing mechanism. Indeed, it can be described as ribbons of the latter structure, four octahedra thick, shifted c/2 with respect to each other. It results in infinite single perovskite layers waving along the (001) plane and connected through flat mixed layers [(TIO)₄(CO)₄]∞. This oxycarbonate can also be described as a 1201-type structure in which the [TIO]∞ layers are replaced by mixed [(TIO)₄(CO)₄]∞ layers. The susceptibility measurements show that this cuprate exhibits a significantly higher critical temperature than the 1201-cuprates. The T_{c onset} of the synthesized phase is 56 K and it can be increased up to 62 K by hydrogen annealing; in the same way, one observes a large Meissner volume fraction of 35% at 4.2 K.     

Synthesis and characterization of HgBa2Can−1CunO2n+2+δ (n = 1, 2, and 3)

We have successfully prepared the first three members of the mercury-based superconducting compounds Hg--- Ba₂Ca_n−1Cu_nO_2n+2+δ, namely Hg---1201, Hg---1212 and Hg---1223 with high purity and very good quality. T he influence of the synthesis parameters is studied in detail. Using the sealed quartz tube method, very simple procedures are found to ensure a 100% reproducibility of nearly 100% pure Hg---1201 and 85–90% Hg---1212 and Hg---1223. Oxygen annealing of the sample Hg---1201 at 300°C for 18 h results in an enhancement of its critical temperature up to 97 K. The symmetry of the first and second members is tetragonal with lattice parameters a = 3.8831 (1) Å, C = 9.5357 (2) Å, and A = 3.8624 (1) Å, C = 12.7045 (2) Å, respectively. X-ray diffraction lines of Hg---1223 can be indexed in a tetragonal cell with a = 3.8564 (1) Å and C = 15.8564 (9) Å as well as in an orthorhombic cell with lattice parameters a = 5.4537 (1) Å, B = 5.4247 (1) Å, and C = 15.8505 (7) Å.     

Observations of ω0/2 harmonic emission from 0.35μm laser-irradiated plasmas

Observations of ω₀/2 harmonic emission from both spherical and plane targets irradiated by 0.35 μm, 800 ps laser pulses have been obtained with simultaneous high spectral and temporal resolutions of 16 Å and 20 ps respectively. The ω₀/2 harmonic emission spectrum is interpreted as providing a direct measurement of the frequency of the ω₀/2 plasma waves and hence can be used to estimate the electron temperature.     

Direct decomposition of nitrogen monoxide over a K-deposited Co(0 0 0 1) surface: Comparison to K-doped cobalt oxide catalysts

The influence of deposited potassium on the oxidation and NO reactivity of a Co(0 0 0 1) surface was studied using X-ray photoelectron spectroscopy. The formation of surface CoO was observed when the clean Co(0 0 0 1) surface was exposed to O₂ at 500 K. In contrast, the Co atoms on the K-deposited Co(0 0 0 1) surface remained at a lower oxidation state, CoO_x (0 < x < 1). No adsorption or dissociation of NO occurred on the CoO/Co(0 0 0 1) surface at 320 K, whereas a NO₂⁻ species formed on the oxidized K/Co(0 0 0 1) surface. This species is considered to be an intermediate in NO decomposition. It was concluded that the role of potassium was (i) to form the NO₂⁻ intermediate, and (ii) to keep the Co surface partially oxidized (CoO_x) as the active site for the dissociation of the NO₂⁻ species.     

Ion-pair and triple-ion studies of some tetraalkylammonium halides in pure 1,3-dioxolane at 298.15 K

Conductivities of some tetraalkylammonium halides, viz. tetramethylammonium iodide (Me₄NI), tetraethylammonium bromide (Et₄NBr), tetraethylammonium iodide (Et₄NI), tetra-n-propylammonium bromide (Pr₄NBr), tetra-n-butylammonium bromide (Bu₄NBr), tetra-n-butylammonium iodide (Bu₄NI) and tetra-n-heptylammonium bromide (Hp₄NBr) were measured at 298.15 K in 1,3-dioxolane which has a low permittivity (ε = 7.13). A minima in the conductometric curves (molar conductance, Λ vs. square root of concentration, √c) was observed for concentrations which were dependant upon both the salt and the solvent. The observed molar conductivities were explained by the formation of ion-pairs (M⁺ + X⁻ ↔ MX, K_P) and triple-ions (2M⁺ + X⁻ ↔ M₂X⁺; M⁺ + 2X⁻ ↔ MX₂⁻, K_T). A linear relationship between the triple-ion formation constants [log (K_T/K_P)] and the salt concentrations at the minimum conductivity (log C_min) was given for all the salts in 1,3-dioxolane. The formation of triple-ions might be attributed to the ion sizes in solutions in which Coulombic interactions and non-Coulombic interactions act as the main forces between the ions (R₄N⁺…..X⁻).     

Preparation of tantalum oxide thin films by photo-assisted atomic layer deposition

Tantalum oxide thin films were prepared by photo-assisted atomic layer deposition (Photo-ALD) in the substrate temperature range of 170–400 °C using Ta(OC₂H₅)₅ and H₂O as precursors. The constant growth rates of 0.42 and 0.47 Å per cycle were achieved for the films grown by normal ALD and Photo-ALD, respectively. The increased growth rate in Photo-ALD is probably due to the reactive surface by photon energy and faster surface reaction. In Photo-ALD, however, the constant growth rate started at lower temperature of 30 °C and one cycle time shortened up to 5.7 s than that of normal ALD. The films grown by normal ALD and Photo-ALD were amorphous and very smooth (0.21–0.35 nm) as examined by X-ray diffractometer and atomic force microscopy, respectively. Also, the refractive index was found to be 2.12–2.16 at the substrate temperature of 190–300 °C, similar to that of the film grown by normal ALD. However, the remarkably low leakage current density of 0.6×10⁻⁶ A/cm² to 1×10⁻⁶ A/cm² at applied field of 1 MV/cm is several order of magnitude smaller than that of normal ALD, probably due to the presence of reactive atom species.     

Rotational epitaxy of a hexagonal layered material on a square substrate: PbI2 on InSb(001)

PbI₂ has been adsorbed on the clean InSb(001)-(4 × 1) reconstructed surface and on the InSb(001)-(1 × 3)-Pb lead covered reconstructed surface. On the clean surface epitaxial growth occurred with the unit mesh of the layered PbI₂ aligning exactly with both the substrate [110] and [1 0] directions. On desorption a reaction occurred between the last layer of PbI₂, and the substrate, forming a series of structures which finished with a well-formed (1 × 3)-Pb structure in which the surface is depleted/enriched in In/Sb compared to the clean (4 × 1). The Pb in this structure is thought to partially replace surface In. Epitaxial adsorption also occurred on the (1 × 3)-Pb surface generating a single, well-formed structure with the hexagonal net of the PbI₂ aligned with just the [1 0] substrate direction. The structures and reactions are discussed and a row matching model is proposed to explain the single epitaxial orientation of PbI₂ on the (1 × 3)-Pb surface.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

A new layered cuprate superconductor: GaSr2(Y, Ce)2Cu2O9−δ

A new layered cuprate compound with a nominal composition of GaSr₂Y_2−xCe_xCu₂O_9−δ has been prepared. It crystallizes in a tetragonal lattice with cell parameters: a = 3.812 Å, c = 28.16 Å. The structure of the compound belongs to the same family of 1222 phase and is derived from that of GaSr₂LnCu₂O₇ by replacing the single Ln³⁺ layer with a double fluorite (Y, Ce)₂O₂ layer. Like other parent cuprate compounds of superconductors, the as-prepared samples showed antiferromagnetic and semiconducting behavior. After treatment under high oxygen pressure, the samples exhibited bulk superconductivity with transition temperatures between 12–14 K.