On the existence and stability of double-walled armchair silicon carbide nanotubes

A systematic study of type 1 armchair double-walled SiC nanotubes (DWNTs) (n,n)@(m,m) (3≤n≤6;7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized using the hybrid functional B3LYP (Becke’s three-parameter exchange functional and the Lee-Yang-Parr correlation functional) and the all-electron 3-21G* basis set. The study indicates that the stabilities of the double-walled SiC nanotubes are of the same order as those of single-walled SiC nanotubes suggesting the possibilities of experimental synthesis of both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. The formation energy of the DWNTs is found to be maximum when the interlayer separation is about 3.5 Å. The DWNTs (n,n)@(n+4,n+4) are found to have large formation energies. In particular, (5,5)@(9,9) DWNT is the most stable tube in our study with a binding energy per atom of 5.07 eV, the largest formation energy of 12.39 eV, an interlayer separation of 3.58 Å and a “band gap” of 1.97 eV. All double-walled SiC nanotubes are found to be semiconductors, with the band gaps decreasing from single-walled nanotubes to double-walled nanotubes.     

Existence and stability of co-axial and meshed double-walled armchair silicon nanotubes

A systematic study of armchair double-walled Si nanotubes (DWNT) (n, n)@(m, m) (3≤n≤6; 7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized with an all electron 3–21 G^⁎ basis set and the B3LYP functional. Analysis of the electronic structure properties of these tubes has also been performed with a larger basis set. The study indicates that the stabilities of the Si nanotubes are of the same order as those of single-walled Si nanotubes. It should be possible to experimentally synthesis both single-walled and double-walled Si nanotubes. The binding energy per atom or the cohesive energy of the nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. Nanotubes with small interlayer separations, called meshed tubes, do not hold the coaxial cylindrical structure after optimization. The SiNTs (n, n)@(n+3, n+3) are found to have large formation energies and binding energies per atom. For example, (3, 3)@(6, 6), (4, 4)@(7, 7), (5, 5)@(8, 8), and (6, 6)@(9, 9) all have large binding energies per atom, around 3.7 eV/atom. All Si nanotubes are found to be semiconductors. However, the band gap, in general, is observed to decrease from single walled nanotubes to double walled nanotubes.     

Electrical conductivity of double-walled carbon nanotubes in the framework of the Hubbard model

The electrical conductivity of double-walled carbon nanotubes of the “armchair” type with the ABAB packing of layers is investigated theoretically. The temperature dependences of the longitudinal electrical conductivity σ(T) for a number of double-walled carbon nanotubes, such as the (3, 3)@(8, 8), (5, 5)@(10, 10), (8, 8)@(13, 13), (10, 10)@(15, 15), and (15, 15)@(20, 20) nanotubes, are obtained in the framework of the Hubbard model with the use of the Green’s function method. It is revealed that the dependences of the electrical conductivity for single-walled and double-walled carbon nanotubes exhibit different behavior in the temperature range from 30 to 60 K. In particular, the dependence of the electrical conductivity for the double-walled carbon nanotubes flattens out in this temperature range.     

Third-order nonlinear optical response in double-walled carbon nanotubes

Resonant behavior and magnitudes of third-order nonlinear optical susceptibilities in double-walled carbon nanotubes (DWNTs) have been investigated by means of femtosecond pump-probe spectroscopy with different pump-photon energies. With the selective excitation of the E₂₂ exciton transition of the inner tubes labeled by the chiral vector indices (7,5) and (7,6), the imaginary part of nonlinear susceptibility Imχ⁽³⁾ has shown the resonant enhancement compared with the case of the nonresonant excitation of the specific tube. The nonlinear response signal at the E₂₂ transition energy of the (8,7) tube has been also enhanced for the excitation of the G-band phonon sideband of its E₂₂ transition. This result is consistent with the phonon-mediated nonlinear optical process observed for the E₂₂ transitions in single-walled carbon nanotubes (SWNTs). It has been also found that the values of the figure of merit Im χ⁽³⁾/α (α: absorption coefficient) of the inner tubes in DWNTs are smaller than those of the corresponding SWNTs, which is interpreted in terms of decay time shortening due to the energy relaxation between the inner and outer tubes.     

Interwall conductance in double-walled armchair carbon nanotubes

The dependence of the interwall conductance on distance between walls and relative positions of walls are calculated at the low voltage by Bardeen method for (n,n)@(2n,2n) double-walled carbon nanotubes (DWCNTs) with n=5,6,…,10. The calculations show that interwall conductance does not depend on temperature (for T?500 K) and current-voltage characteristic is linear. The conductance decreases by 6 orders of magnitude when the interwall distance is doubled. Thus, depending on the interwall distance, DWCNTs can be used as temperature stable nanoresistors or nanocapacitors.     

Codoping of Potassium and Bromine in Carbon Nanotubes： A Density Functional Theory Study

We investigate the co-doping of potassium and bromine in single-walled carbon nanotubes （SWCNTs） and doublewalled carbon nanotubes （DWCNTs） based on density functional theory. In the co-doped （6,0） SWCNTs, the 4s electron of potassium is transferred to nanotube and Br, leading to the n-type feature of SWCNTs. When potassium is intercalated into inner tube and bromine is put on outer tube, the positive and negative charges reside on the outer and inner tubes of the （7,0）@（16,0） DWCNT, respectively. It is expected that DWCNTs would be an ideal candidate for p-n junction and diode applications.     

Conductivity of double-walled carbon nanotubes at pressures of up to 30 GPa

Results from experimental studies of the electrical resistance of double-walled carbon nanotubes (DWNTs) in conducting diamond high-Pressure chambers at pressures of up to 30 GPa and room temperature are presented. The effect pressure has on the structure of the outer and inner tubes is analyzed. Ranges of pressure are found in which the electrical resistance of DWNTs changes considerably.     

Electric field-induced unzipping of hydrogenated carbon nanotubes into graphene nanoribbons

We have investigated the electric field effect on horseshoe-shape carbon nanotubes (CNTs) resulting from hydrogen adsorption on the single-wall armchair (n,n)CNTs with 6 ≤ n ≤ 16 by using the density functional theory calculations. The horseshoe-shape CNT is completely unzipped into a graphene nanoribbon upon applying a critical electric field, which decreases with increasing CNT diameter, thus enabling one to select a nanoribbon width. A simple model based on the tensile force exerted on the tube walls by the applied electric field was introduced to understand the CNT-diameter dependence of the critical field.     

Specific features of low-frequency vibrational dynamics and low-temperature heat capacity of double-walled carbon nanotubes

A continuous model has been constructed for low-frequency dynamics of a double-walled carbon nanotube. The formation of the low-frequency part of the phonon spectrum of a double-walled nanotube from phonon spectra of its constituent single-walled nanotubes has been considered in the framework of the proposed approach. The influence of the environment on the phonon spectrum of a single double-walled carbon nanotube has been analyzed. A combined method has been proposed for estimating the coefficients of the van der Waals interaction between the walls of the nanotube from the spectroscopic data and the known values of the elastic moduli of graphite. The low-temperature specific heat has been calculated for doublewalled carbon nanotubes, which in the field of applicability of the model (T < 35 K) is substantially less than the sum of specific heats of two individual single-walled nanotubes forming it.     

Comparison of different types of polypyrimidine/CNTs/Pt hybrids in fuel cell catalysis

In this paper, we mainly studied the preparation of platinum-containing composite materials with carbon nanotubes wrapped by polypyrimidine-conjugated polymers and the performance of the composites. The polymer-based carbon nanotubes/Pt catalysts were prepared successfully and confirmed by infrared spectroscopy, XPS, XRD, and TEM images. The performance of polypyrimidine/multi-walled carbon nanotubes (MWCNTs)/Pt and polypyrimidine/double-walled carbon nanotubes (DWCNTs)/Pt was compared with the polypyrimidine/single-walled carbon nanotubes (SWCNTs)/Pt. The amount of the loaded Pt on the polypyrimidine/MWCNTs and polypyrimidine/DWCNTs was calculated to be 50.5 wt% and 52.7 wt% respectively. The effective specific surface area of the polypyrimidine/MWCNTs/Pt (45.7 m²/g) and polypyrimidine/DWCNTs/Pt (42.47 m²/g) was observed by electrochemical cyclic voltammetry. These studies strongly imply that the MWCNTs were better candidates than DWCNTs and SWCNTs in the application of polypyrimidine/CNT materials as catalyst for fuel cells.     

Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.     

Fabrication of silicon microwire arrays for?photovoltaic?applications

A?novel method of combining photolithography, wet chemical etching and oxidation process was proposed to fabricate large area of silicon microwire (SiMW) arrays. The dimensions of the SiMWs can be easily controlled by photomask and etching conditions. Solar cells based on the heterojunction between SiMW and double-walled carbon nanotubes (DWNTs) were constructed. The initial test on the DWNT/SiMW shows efficiency (??) of?0.59%. By adding a few drops of HBr/B₂ electrolyte, the efficiency was improved to 1.96% with J _sc=19.2?mA/cm² and V _oc=0.35?V, FF=29.2%, showing the potential of SiMWs in photovoltaic applications.     

n-type and p-type double-walled carbon nanotube field-effect transistors based on charge-transfer modulation

Electrical transport properties of double-walled carbon nanotubes (DWNTs) are modulated by encapsulating alkali-metal Cs atom or C₆₀ molecules via a plasma ion-irradiation method. The pristine DWNTs are found to exhibit ambipolar semiconducting behavior due to their small bandgap. In contrast, Cs and C₆₀ encapsulated DWNTs exhibit high performance unipolar n-type and p-type semiconducting behavior since they can operate as an electron donor and acceptor, respectively. Moreover, by controlling the filling level, p–n junction is found to be formed in DWNTs by Cs encapsulation. Our results indicate that DWNTs have great potential as building blocks for various electronic nano devices. PACS 73.63.Fg; 73.63.-b; 61.48.+c     

On the characterization of the elastic properties of asymmetric single-walled carbon nanotubes

In order to characterize asymmetric single-walled carbon nanotubes, an algorithm has been developed based on numerical simulation to relate the physical geometry to the elastic properties of asymmetric single-walled carbon nanotubes (SWCNTs). A large number of finite element results for the stiffness of asymmetric SWCNTs has been used to develop a best surface fitting function to define the relationship between the geometry of SWCNTs and their stiffness. However, since the stiffness of asymmetric nanotubes depends upon the configuration parameters, n and m, it was impossible to define any diameter dependency. Based on the maximum reaction force concept and in order to account for the hidden mechanical behavior of asymmetric SWCNTs, the chiral factor (CF) has been employed in this study. The proposed CF converts any asymmetric geometry (n and m) into a value between 0 and 1. A group of the SWCNTs with the same applied boundary condition (n+m=30) and different range of the CF was also used for studying of the shear contribution. The chiral factor dependency, which is developed in this study, is applicable for characterising and selecting asymmetric SWCNTs in the design of advanced nanomaterials. Furthermore, the equation which is calculated in this study can be useful for finding the best criteria for selecting asymmetric SWCNTs.     

Prismatic modifications of single-walled carbon nanotubes and their electronic properties: Regular adsorption of fluorine atoms on graphene surfaces of nanotubes

The regular adsorption of fluorine atoms on surfaces of single-walled carbon nanotubes along their axes can lead to a modification of cylindrical carbon cores of these single-walled carbon nanotubes to carbon cores that have a nearly prismatic shape (prismatic modification). In faces of these modified single-walled carbon nanotubes, there can arise quasi-one-dimensional isolated carbon conjugated subsystems (tracks) with different structures. It has been established that the main characteristics of the single-walled carbon nanotubes thus modified are rather close to the corresponding characteristics of the related isostructural polymer conjugated systems (such as cis-polyenes, polyphenylenes, poly(periacenes), or polyphenantrenes). Fragments of model nanotubes of the (n, n) and (n, 0) types that contain up to 360 carbon atoms and their derivatives doped with fluorine atoms have been calculated using the semiempirical parametric method 3.     

Excitons and linear optical spectra of E33 and E44 in single wall carbon nanotubes under axial magnetic field

The E₃₃ and E₄₄ optical spectra of semiconducting single-walled carbon nanotubes under axial magnetic field (B) are studied using the tight-binding model, which also takes into account the exciton effect. It is found that the E₃₃ and E₄₄ splitting, induced by the axial magnetic field, is line increased with magnetic field, which can be described by the splitting rate. Also by investigation of the dependence of splitting rate, we found that it shows a clear (2n+m) family behavior besides the diameter dependence, which can be used as a supplemental tool to identify the tubes used in the experiment, and is expected to be detected by the future experiment.     

Structural and electronic properties of chiral single-wall copper nanotubes

The structural,energetic and electronic properties of chiral(n,m)(3≤n≤6,n/2≤m≤n)single-wall copper nanotubes(CuNTs)have been investigated by using projector-augmented wave method based on density-functional theory.The(4,3)CuNT is energetically stable and should be observed experimentally in both free-standing and tip-suspended conditions,whereas the(5,5)and(6,4)CuNTs should be observed in free-standing and tip-suspended conditions,respectively.The number of conductance channels in the CuNTs does not always correspond to the number of atomic strands comprising the nanotube.Charge density contours show that there is an enhanced interatomic interaction in CuNTs compared with Cu bulk.Current transporting states display different periods and chirality,the combined effects of which lead to weaker chiral currents on CuNTs.     

Electronic properties of single-walled V2O5 nanotubes

Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures—single-walled nanotubes formed by rolling (010) layers of V₂O₅ are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V-O covalent bonds were found to be the strongest interactions in V₂O₅ tubes, whereas V-V bonds proved to be much weaker.     

Non-Intersecting Squared Bessel Paths at a Hard-Edge Tacnode

The squared Bessel process is a 1-dimensional diffusion process related to the squared norm of a higher dimensional Brownian motion. We study a model of n non-intersecting squared Bessel paths, with all paths starting at the same point a > 0 at time t = 0 and ending at the same point b > 0 at time t = 1. Our interest lies in the critical regime ab = 1/4, for which the paths are tangent to the hard edge at the origin at a critical time ${t^*\in (0,1)}$ . The critical behavior of the paths for n → ∞ is studied in a scaling limit with time t = t ^* + O(n ^?1/3) and temperature T = 1 + O(n ^?2/3). This leads to a critical correlation kernel that is defined via a new Riemann-Hilbert problem of size 4 × 4. The Riemann-Hilbert problem gives rise to a new Lax pair representation for the Hastings-McLeod solution to the inhomogeneous Painlevé II equation q′′(x) = xq(x) + 2q ³(x) ? ν, where ν = α + 1/2 with α > ?1 the parameter of the squared Bessel process. These results extend our recent work with Kuijlaars and Zhang (Comm Pure Appl Math 64:1305–1383, 2011) for the homogeneous case ν = 0.     

First-principles study of narrow single-walled GaN nanotubes

Structural and electronic properties of narrow single-walled GaN nanotubes with diameter from 0.30 to 0.55 nm are investigated using the density functional method with generalized-gradient approximation. The calculations of total energies predict that the most likely GaN nanotubes in our calculation are (2,2), (3,2) and (3,3) nanotubes. From a detailed analysis we find that these narrow single-walled GaN nanotubes are all semiconductors, of which the armchair and chiral tubes are indirect-band-gap semiconductors whereas the zigzag ones have a direct gap except for (4,0) tube. The indirect band gap of (4,0) tube can stem from band sequence change induced by curvature effect. Our results show that the π-π hybridization effect and the formation of benign buckling separations play a key role in the band sequence changes of (4,0) tube.