Sustained and Controlled Release of Volatile Precursors for Chemical Vapor Deposition of Graphene at Atmospheric Pressure

Precursors and catalysts play vital roles in chemical reactions. Considerable efforts have been devoted to the investigation of catalysts for graphene growth by chemical vapor deposition in recent years. However, there has been little research on precursors because of a lack of innovation in term of creating a controllable feeding method. Herein, we present a novel sustained and controlled release approach, and develop a convenient, safe, and potentially scalable feeding system with the assistance of matrix materials and a simple portable feeder. As a result, a highly volatile liquid precursor can be fed accurately to grow large-area, uniform graphene films with optimal properties. This feeding approach will further benefit the synthesis of other two-dimensional materials from various precursors.     

化学气相沉积法制备氮化钛

本文以氮化钛的CVD制备为例,说明了源物质的选择对CVD过程的影响.在此基础上,综述了化学气相沉积技术在材料制备领域的最新进展.     

Low-Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes

(Me₃Si)₂SiMe₂, (Me₃Si)₃SiMe and (Me₃Si)₄Si were used as precursors for the deposition of polycrystalline β-SiC thin films on silicon substrates at 1000–1200°C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.     

胍基硅前驱体的合成及应用

以胍基取代的二甲基二氯硅烷与胺基锂反应合成了3种硅基化合物,使用核磁共振、高分辨质谱、元素分析对化合物结构进行了表征,通过热重分析(TGA)研究了化合物的热稳定性、挥发性、蒸汽压等性能。 3种化合物均具有良好的热稳定性及挥发性,无明显热分解过程,固体残留小于1%,接近纯挥发过程,最高蒸汽压在3600~5300 Pa,满足前驱体使用要求。 以二甲基-胍基-甲乙胺基-硅烷为前驱体,采用螺旋波等离子体气相沉积(HWPCVD)工艺制备了硅基薄膜,使用X射线光电子能谱(XPS)和扫描电子显微镜(SEM)分析了薄膜的化学组成和膜表面结构,XPS分析结果证实该薄膜为Si、N、C组成,实验结果表明,该类胍基硅化合物可作为硅基化学气相沉积(CVD)前驱体材料应用于集成电路制造。     

化学气相沉积法合成二维过渡金属硫族化合物研究进展

二维晶体材料所独有的二维平面结构赋予了这类材料诸多独特的性质. 近年来围绕二维过渡金属硫族化合物的相关研究发展迅速. 本文以二维MoS₂、WS₂为代表概述了利用化学气相沉积法合成过渡金属硫族化合物二维晶体的研究进展, 阐述了基本合成策略, 讨论了主要影响因素, 归纳了以MoS₂、WS₂为结构基元的二维合金及异质结构的合成方法, 最后阐明了利用化学气相沉积法合成二维晶体存在的主要问题并展望了这一领域的发展前景.     

Chemical Solution Deposition of ZnO Thin Films by an Aqueous Solution Gel Precursor Route

An aqueous chemical solution deposition method was used to prepare thin films of ZnO on SiO₂/Si (1 1 1) substrates. Starting from an aqueous solution of Zn acetate, citric acid and ammonia, very thin films could be deposited by spin coating. Heating parameters, necessary for thin film annealing, were determined using FTIR experiments on dried gel precursors, heated up to different temperatures. The morphology and the thickness of the films were investigated by SEM. It is found that homogeneous thin films with grain sizes of about 20 nm are formed. XRD experiments show that there is an indication that the films, crystallized at 500°C, exhibit preferential grain growth along the c-axis.     

Volatile β-diketonato Complexes of Ruthenium,Palladium and Platinum. Preparation and Thermal Characterization

Ruthenium, palladium and platinum complexes of 2,2,6,6-tetramethyl-3,5-heptanedione (thd) and ruthenium tris acetylacetonate (acac) were synthetized and studied with TG, DTA, DSC and MS methods. Thermal properties of ruthenocene were also studied. The platinum thd complex has the highest volatility despite the second highest molecular mass of the complex. All the complexes sublimed under reduced pressure. Ru(acac)3 decomposed during sublimation under atmospheric pressure of nitrogen whereas the other compounds studied sublimed also under these conditions. Pd(thd)₂ reduced under atmospheric pressure of H₂ /N₂ (5% H₂ ) whereas the ruthenium complexes were not reduced. The field desorption mass spectra of complexes showed only the molecular peaks and no fragmentation occurred. This revised version was published online in July 2006 with corrections to the Cover Date.     

Chemical Infiltration during Atomic Layer Deposition: Metalation of Porphyrins as Model Substrates

New uses for ALD : By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site‐specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A=Ph, p‐HO₃SC₆H₄.

     

化学浴沉积法制备高取向钒酸铋薄膜

Highly oriented BiVO₄ films were synthesized on glass substrates by modified chemical bath deposition (CBD). The influence of the deposition parameters as temperature and time of deposition on the rate of process and the quality of BiVO₄ films was studied by XRD, Raman Spectroscopy and SEM. The film deposited at 90 ℃ for 12 h was dense and uniform. The BiVO₄ thin film under this optimal depositing conditions was consisted of octagonal crystalline grains in a narrow size distribution with an average size of about 7 μm, showing a (004) preferential orientation.     

化学气相淀积法合成氮化铝薄膜及其工艺设计

对ＡｌＢｒ３－ＮＨ３－Ｎ２体系化学气相淀积法合成Ａ１Ｎ膜进行了热力学分析和工艺设计，研究了在不同淀积温度和体系总压时，体系中主要气态物种的平衡分压和Ａ１Ｎ膜的理论淀积速率与源温和载气流量的关系，并与微波等离子体化学气相淀积Ａ１Ｎ膜的实验结果进行了比较。     

Vapor‐Phase Deposition and Modification of Metal–Organic Frameworks: State‐of‐the‐Art and Future Directions

Materials processing, and thin‐film deposition in particular, is decisive in the implementation of functional materials in industry and real‐world applications. Vapor processing of materials plays a central role in manufacturing, especially in electronics. Metal–organic frameworks (MOFs) are a class of nanoporous crystalline materials on the brink of breakthrough in many application areas. Vapor deposition of MOF thin films will facilitate their implementation in micro‐ and nanofabrication research and industries. In addition, vapor–solid modification can be used for postsynthetic tailoring of MOF properties. In this context, we review the recent progress in vapor processing of MOFs, summarize the underpinning chemistry and principles, and highlight promising directions for future research.     

Metal Infiltration into Biomaterials by ALD and CVD: A Comparative Study

Atomic layer deposition (ALD) is a subset of chemical vapor deposition (CVD) and both use very similar chemistry. Recently, it has been reported that ALD has the potential to realize a new design paradigm of bioinorganic materials through metal infiltration, which in nature has been employed as a hardening strategy for many tissues in diverse biological organisms. Herein, using a spider dragline silk and a collagen membrane as targets, we have performed a comparative study to elucidate the difference of the metal infiltration effect by ALD and CVD. From the comparison of mechanical properties, concentration of the infiltrated metal, and structural changes induced by the infiltrated metal, it has been proven that the metal can effectively infiltrate biomaterials by ALD and the infiltrated metal leads to highly improved mechanical properties accompanied by substantial changes in the protein structures, whereas CVD is less effective.     

Estimation of solid vapor pressures of pure compounds at different temperatures using a multilayer network with particle swarm algorithm

Solid vapor pressures (P^S) of pure compounds have been estimated at several temperatures using a hybrid model that includes an artificial neural network with particle swarm optimization and a group contribution method. A total of 700 data points of solid vapor pressure versus temperature, corresponding to 70 substances, have been used to train the neural network developed using Matlab. The following properties were considered as input parameters: 36 structural groups, molecular mass, dipole moment, temperature and pressure in the triple point (upper limit of the sublimation curve), and the limiting value P^S → 0 as T → 0 (lower limit of the sublimation curve). Then, the solid vapor pressures of 28 other solids (280 data points) have been predicted and results compared to experimental data from the literature. The study shows that the proposed method represents an excellent alternative for the prediction of solid vapor pressures from the knowledge of some other available properties and from the structure of the molecule.     

类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用

类石墨烯过渡金属硫属化合物如MoS₂、WS₂、MoSe₂、WSe₂等因为具有层数依赖的带隙结构而受到了广泛关注。尤其是本征态的WS₂为双极性半导体,它同时具有n型和p型电输运特性,有望在电子电路、存储器件、光电探测和光伏器件方面得以广泛应用。近年来,化学气相沉积技术已经被广泛用于制备大面积二维硫属化合物(如MoS₂, MoSe₂, WS₂ 和WSe₂)原子层薄膜。目前关于其他二维材料体系的综述文献介绍较多,但是针对WS₂介绍的综述文献还鲜有报道。因此,本文综述了类石墨烯WS₂薄膜的化学气相沉积法制备和相关器件的国内外研究进展,讨论了WS₂薄膜的化学气相沉积法制备机理及生长因素如硫粉含量、载气的成分、反应温度、基底材料等对薄膜成膜质量的影响,介绍了WS₂薄膜在晶体管、光电器件及与其他二维材料构成的异质结构器件的最新研究成果,并对可能存在的问题进行了分析和述评。     

Chemical vapor deposition of metal borides: 6. The formation of neodymium boride thin film materials from polyhedral boron clusters and metal halides by chemical vapor deposition

The chemical vapor deposition (CVD) of crystalline thin films of neodymium hexaboride (NdB₆) was achieved using either nido ‐pentaborane(9) or nido ‐decaborane(14) with neodymium(III) chloride on different substrates. The highly crystalline NdB₆ films were formed at relatively moderate temperatures (835 °C, ca. 1 µm/h) and were characterized by scanning electron microscopy, X‐ray emission spectroscopy, X‐ray diffraction and glow discharge mass spectrometry. The NdB₆ polycrystalline films were found to be pure and uniform in composition in the bulk material. Depositions using CoCl₂, NdCl₃ and B₅H₉ as the CVD precursors resulted in the formation of a mixture of NdB₆ and CoB phases, rather than the ternary phase. Copyright © 2008 John Wiley & Sons, Ltd.     

Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines

We have prepared two new Ca^II amidinates, which comprise a new class of ALD precursors. The syntheses proceed by a direct reaction between Ca metal and the amidine ligands in the presence of ammonia. Bis(N,N′‐diisopropylformamidinato)calcium(II) ( 1 ) and bis(N,N′‐diisopropylacetamidinato)calcium(II) ( 2 ) adopt dimeric structures in solution and in the solid state. X‐ray crystallography revealed asymmetry in one of the bridging ligands to afford the structure [(η²‐L)Ca(μ‐η²:η²‐L)(μ‐η²:η¹‐L)Ca(η²‐L)]. These amidinate complexes showed unprecedentedly high volatility as compared to the widely employed and commercially available Ca^II precursor, [Ca₃(tmhd)₆]. In CaS ALD with 1 and H₂S, the ALD window was approximately two times wider and lower in temperature by about 150 °C than previously reported with [Ca₃(tmhd)₆] and H₂S. Complexes 1 and 2 , with their excellent volatility and thermal stability (up to at least 350 °C), are the first homoleptic Ca^II amidinates suitable for use as ALD precursors.     

二维硫化钼基原子晶体材料的化学气相沉积法制备及其器件

二维过渡族金属硫属化合物因其带隙具有强烈的层数依赖性而在电子器件方面具有广泛的应用前景.其中单层二硫化钼(MoS₂)是该系列材料中最典型的一种直接带隙半导体,它具有优异的光、电、磁、热和力学性能.二维MoS₂有望在光电探测、光伏器件、场效应晶体管、存储器件、谷电子和自旋器件、温差电器件、微纳机电器件和系统等方面得以广泛应用.化学气相沉积(CVD)法已成为制备二维过渡族金属硫属化合物如MoS₂、MoSe₂、WS₂和WSe₂等原子层薄膜的主要手段,尤其科学界利用CVD法对二维MoS₂材料进行了深入的制备探索,通过该方法制备的MoS₂薄膜在电子和光电器件方面已经有广泛研究.本文将从二维MoS₂的基本物性出发,详细介绍CVD法制备MoS₂的各种工艺过程,如热分解硫代硫酸盐法、硫化Mo(MoO_3-x)薄膜制备法、MoO_3-x粉体与硫属前驱体气相合成法和钼箔表面直接硫化法,并介绍了基于MoS₂的二维异质结构筑方法.在制备材料的基础上,详细阐述了二维MoS₂在场效应晶体管、光电探测器、柔性电子器件以及异质结器件方面的应用,并展望了二维材料在半导体器件中的应用前景.     

Towards Multipotent Coatings: Chemical Vapor Deposition and Biofunctionalization of Carbonyl‐Substituted Copolymers

Future advances in designing bioactive materials, such as antithrombotic coatings for cardiovascular stents, will require widely applicable and robust methods of surface modification. In this paper, we report on the development of multifunctional polymer coatings made by chemical vapor deposition (CVD) copolymerization. Polymer coatings of various [2.2]paracyclophane derivatives were co‐deposited in controlled ratios and their chemical composition verified by FT‐IR and X‐ray photoelectron spectroscopy. Furthermore, preliminary biocompatibility of these coatings was assessed using human umbilical vein endothelial cells and 3T3 murine fibroblasts. The parallel immobilization of two different antithrombotic biomolecules onto a CVD‐based copolymer is also demonstrated by orthogonal immobilization strategies.

     

Deposition of copper‐doped iron sulfide (CuxFe1−xS) thin films using aerosol‐assisted chemical vapor deposition technique

Copper‐doped iron sulfide (Cu_xFe_1?xS, x = 0.010–0.180) thin films were deposited using a single‐source precursor, Cu(LH)₂Cl₂ (LH = monoacetylferrocene thiosemicarbazone), by aerosol‐assisted chemical vapor deposition technique. The Cu‐doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X‐ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X‐ray analysis (EDX) and atomic force microscopy. XRD studies of Cu‐doped FeS thin films at all the temperatures revealed formation of single‐phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer‐like to cylindrical plate‐like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd.