Cr掺杂对La0.4Ca0.6MnO3电荷有序及自旋玻璃态的影响

用回相反应法制备了La0.4Ca0.6M1-xCrxO3(x=0.00,0.06,0.10)多晶样品.通过XRD、M～T曲线、ESR谱线,研究了Cr替代Mn对La0.4Ca0.6MnO3磁性质的影响及在CE型反铁磁体系中的电荷序和自旋序之间的耦合相互作用.研究结果表明:母体La0.4Ca0 6MnO3磁结构很复杂,在2...     

钙钛矿锰氧化物(Nd1-xLax)0.5Ca0.5MnO3体系中的铁磁再入现象

研究了(Nd1-xLax)0.5Ca0.5MnO3(0≤x≤0.5)体系的X射线衍射谱,Raman吸收谱和电输运特性.通过电输运性质的测量给出了金属绝缘转变温度Tm与A位离子平均半径之间的关联.结果表明,La3 离子的掺杂压制低温下的电荷有序,导致金属绝缘转变开始出现,且随掺杂浓度的增加,金属绝缘转变(MI)温度(Tm)向高温区移动,对应的峰值电阻率ρp降低.X射线衍射谱和电输运特性均表明,La3 离子的掺入使得A位平均离子半径(〈rA〉)增大,导致局部晶格畸变减小.在掺杂量0.3≤x≤0.5的区域范围内,随着x的增加,双交换作用逐渐增强,有利于低温下铁磁态的形成.但热循环实验的研究结果表明,这种铁磁态属于亚稳态,在能量上反铁磁态比铁磁态更稳定.     

热处理中Pr0.5Sr0.5MnO3薄膜的电学性能变化和应力弛豫

我们用脉冲激光法在(001)LaAlO3衬底上制备了Pr0.5Sr0.5MnO3薄膜,在900℃的空气中进行后退火处理,研究了退火前后薄膜的电磁性能和晶格结构变化.随着温度降低原位生长薄膜在低温段电阻率迅速上升,表现为绝缘体性质.磁化强度-温度曲线表明薄膜具有顺磁-铁磁-反铁磁的相变,并且存在相分离现象.相比之下,退火后薄膜随着温度降低只出现了顺磁绝缘体-铁磁金属相变,在低温区域一直表现为铁磁金属性.x光衍射实验发现退火使得薄膜在垂直于衬底表面方向的晶格伸长量明显减小,表明退火过程中发生了应力弛豫.为了搞清楚后退火中氧含量和应力弛豫的不同作用,我们进行了(110)SrTiO3衬底上Pr0.5Sr0.5MnO3薄膜的后退火对比实验,结果表明退火中的应力弛豫是导致退火前后薄膜电磁性质差异的主要原因.     

Nd0.5Sr0.4Pb0.1MnO3的结构和磁性

通过室温下的中子衍射和磁性测量对多晶样品Nd0.5Sr0.4Pb0.1MnO3的结构和磁性进行了实验研究.中子衍射结果表明,该样品具有正交的钙钛矿结构,空间群是Pnma,即结构发生了晶场畸变.由M-T和R-T曲线可知,居里温度TC=273 K,其特征是随着温度的增加样品经历了从铁磁金属态转变到顺磁半导态,且转变温度Tp＝225 K;用锰氧化物晶场和双交换作用的竞争解释了其温度Tp以下的金属特性.     

基于La_(1.4)Ca_(1.6)Mn_2O_7结构、电输运及磁性研究(英文)

我们制备了名义成分是La1.4 Ca1.6 Mn2 O7的多晶样品,并且研究了它的结构、磁性和电性.利用Rietveld方法对X射线衍射数据进行精修的结果表明,该La1.4 Ca1.6 Mn2 O7是由钙钛矿锰氧化物La0.66 Ca0.34 MnO3和氧化钙CaO组成的复相混合物.其中,La0.66 Ca0.34 MnO3占相成分的大部分,而CaO占小部分.我们对比了该名义组分样品La1.4 Ca1.6 Mn2 O7和La0.7 Ca0.3 MnO3的铁磁居里转变温度和绝缘体-金属转变温度,结果表明该La1.4 Ca1.6 Mn2 O7的磁输运性质是由其中的钙钛矿相成分决定的.所有的这些结果表明,名义组分样品La1.4 Ca1.6 Mn2 O7实际上并没有形成所谓的Sr3Ti2O7型的双层结构,而实际形成的是以钙钛矿结构作为主相的复相混合物.     

脱氧La0.5Ca0.5MnO3样品的铁磁-反铁磁转变和电阻率变化

研究了氧空位对La0.5Ca0.5MnO3 (LCMO)多晶块材的电输运和磁性质的影响. 随着氧空位的增加, 样品在高温段的电阻率一直增加, 并满足绝热小极化子模型, 而低温段的电阻率先下降后上升, 并出现明显的dR/dT>0的行为, 直至最后变为绝缘的. 氧空位的增加抑止了反铁磁相的出现, 使得脱氧的LCMO样品不发生反铁磁转变, 进一步增加氧空位则会抑制铁磁相.     

Nd0.5Ca0.5Mn0.97Co0.03O3体系的超声研究

系统研究了Nd0.5Ca0.5Mn0.97Co0.03O3单相多晶样品在低温下的电磁性质和超声特性.超声测量结果表明,体系在低温下超声声速出现异常,超声声速从室温开始随着温度的降低逐渐减小,并在220K附近声速达到最小,其相对变化(ΔV/V)超过2%.之后,随着温度的进一步降低,声速急剧硬化,其相对变化达到14.5%.分析表明这是由于体系中电-声子相互作用导致的电荷有序态转变的结果,该电声子耦合来源于Mn3 的JahnTeller效应.同时,该体系在100K左右出现了金属绝缘体转变同时伴随着铁磁相变,分析表明在低温下Co离子与Mn离子之间存在着铁磁交换作用,因此微量的Co掺杂会在反铁磁区域内形成部分铁磁小团簇,当铁磁团簇连通后,体系由反铁磁电荷有序态(AFMCO)向铁磁金属态(FMM)转变.研究结果表明了样品在电荷有序相变温度TCO与金属绝缘体转变温度TMI之间(TMI相似文献   

相分离Eu0.5Sr0.5MnO3体系中的场诱导磁相变及输运特性研究

研究了半掺杂相分离锰氧化物Eu0.5Sr0.5MnO3样品的结构和电磁输运特性.在半掺杂情况下,该样品呈O′型正交结构,表明样品存在典型的Jahn-Teller畸变;在75 K附近样品的顺磁/反铁磁背景中开始出现铁磁相,在更低的温度42 K,4000 A/m磁场下M-T的场冷曲线和零场冷曲线出现明显分岔,样品的交流磁化率实部随温度的变化曲线中也在42 K观察到尖峰的出现,表现出团簇玻璃行为.在无外加磁场下该样品在整个测量温区均呈现绝缘体型导电行为,而在外加磁场1.6×106 A/m下出现磁场诱导的绝缘体-金属 (I-M)转变,其电输运特性符合可变程跳跃模型;研究表明,半掺杂Eu0.5Sr0.5MnO3样品的基态存在多种复杂而丰富的磁相互作用之间的竞争机理,其研究将为强关联锰氧化物体系物理机理的理解提供丰富的实验资料.     

V替代Mn对La_(0.45)Ca_(0.55)MnO_3电荷有序相及自旋玻璃态的影响

用固相反应法制备了La0.45Ca0.55Mn1-xVxO3(x=0.00,0.10)多晶样品.通过X射线衍射谱、质量磁化强度-温度曲线、电子自旋共振谱,研究了V5+替代Mn3+/Mn4+对La0.45Ca0.55MnO3电荷有序相和自旋玻璃态的影响.实验结果表明,当x=0.10时,不仅母体的电荷有序相基本破坏,而且母体在40K左右出现的自旋玻璃态也被融化.电荷有序相被破坏的主要原因是用V5+替代Mn3+/Mn4+后,增加了Mn3+与Mn4+的比例,使铁磁双交换作用优于反铁磁超交换作用;自旋玻璃态的融化是由于V替代Mn后破坏了反铁磁背景下有少量铁磁成分的自旋玻璃态的形成条件.     

La2/3 Ca1/3 MnO3中绝缘体-金属相变与CMR效应

我们研究了超大磁阻材料La2/3Ca1/3MnO3的磁电特性,发现由电阻测量得到的绝缘体－金属相变与由磁化曲线得到的顺磁－铁磁相变温区完全一致,均随磁场的增强推向高温区。结果证明绝缘体－金属相变起因于磁序的变化,并伴随着越大磁电阻效应的CMR的发生。     

Characterisation of the reduction properties of La0.5Sr0.5Fe0.5Co0.5O3

We report here on the characterisation by temperature programmed reduction, ⁵⁷Fe Mössbauer spectroscopy and X-ray absorption spectroscopy of the phases resulting from treatment of the perovskite-related material La_0.5Sr_0.5Fe_0.5Co_0.5O₃ in a flowing 90% hydrogen/10% nitrogen atmosphere. The results show that treatment of La_0.5Sr_0.5Fe_0.5Co_0.5O₃ (which contains approximately 50% Fe⁴⁺ and 50% Fe³⁺) in the flowing 90% hydrogen/10% nitrogen atmosphere at 600°C does not result in the reduction of any of the constituent elements of the material and that the perovskite structure is still retained. The Mössbauer spectrum recorded following heating in the gaseous reducing environment at 1,000°C shows the presence of metallic iron, an Fe³⁺-containing phase with parameters compatible with the presence of SrLaFeO₄ which has a K₂NiF₄-type structure, and a paramagnetic Fe³⁺ phase. The X-ray absorption spectroscopy results show the presence of metallic cobalt. The Mössbauer spectrum recorded following heating at 1,200°C continues to show the Fe³⁺-containing components plus a larger contribution from metallic iron. The X-ray absorption spectroscopy results show the presence of metallic cobalt, SrLaFeO₄, La₂O₃ and SrO.     

Crystal structure and the magnetic state of Pr0.5Sr0.5Co0.5Fe0.5O3

The magnetic properties and crystal structure of the Pr_0.5Sr_0.5Co_0.5Fe_0.5O₃ compound are studied by neutron and x-ray diffractions using synchrotron radiation. These measurements show that this compound is a dielectric spin glass with a magnetic moment freezing temperature of about 70 K. As temperature decreases in the range 30–95 K, a structure phase transition of the first order occurs with an increase in the symmetry from orthorhombic (space group Imma) to tetragonal (space group I4/mcm). It is assumed that the transition is caused by a change in the 4f electron configuration of the Pr³⁺ ions.     

Ab initio study of Os0.5W0.5B2, Re0.5W0.5B2, and Os0.5Re0.5B2 with high shear modulus

By using first‐principles calculations, the authors investigate the structural, mechanical, and electronic properties of experimentally synthesized Os_0.5W_0.5B₂. The calculated structural parameters and elastic properties are in good agreement with the experimental results. In addition, two new 5d transition‐metal diborides (Re_0.5W_0.5B₂ and Os_0.5Re_0.5B₂) are predicted to have promising large shear moduli. The latter mainly come from the non‐uniform distribution of valence charge density, which raises the value of the shear moduli. We discuss potentially high hardness in these materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

We report the successful fabrication of a V-grooveAl_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.     

High-temperature impedance spectroscopy of BaFe0.5Nb0.5O3 ceramics doped with Bi0.5Na0.5TiO3

Bi_0.5Na_0.5TiO₃ (BNT)-doped BaFe_0.5Nb_0.5O₃ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

0.5PZN-0.5PZT压电陶瓷拉曼散射研究

PZT基多元系压电陶瓷在三方相含量与四方相含量相等的准同型相界处(MPB)具有极为优异的压电性能。文章采用拉曼散射方法研究了0.5PZN-0.5PZT陶瓷体系中三方-四方相共存与弥散相变现象。研究发现,与纯PZT相比,0.5PZN-0.5PZT体系拉曼谱呈明显宽化特征,表明体系弛豫性较强,依据介温谱计算出弥散因子γ高达1.71。通过对拉曼谱峰进行Gauss函数拟合,定量计算三方相R₁模式与四方相E(3TO)和A₁(3TO)模式相对强度,以及四方相E(4LO)和A₁(3LO)模式与三方相R_h模式相对强度,结果表明0.5PZN-0.5PZT体系三方相与四方相含量相等,组成位于准同型相界,该结果得到XRD相分析验证。电学测量表明0.5PZN-0.5PZT陶瓷压电性能优异：k_p=0.66, d₃₃=425 pC/N,适宜作为压电致动器材料使用。     

Phase transitions in PbSc0.5Ta0.5O3

Ordered and partially ordered PbSc_0.5Ta_0.5O₃ ferroelectric single crystals are studied by diffraction, electrophysical, and optical methods. X-ray diffraction and electrophysical methods indicate the presence of a phase transition in the low-temperature range (at T = ?40°C).     

The intercalation/deintercalation kinetic studies on the structure-integrated cathode material 0.5Li2MnO3 0.5LiNi0.5Mn0.5O2

A cathode material, 0.5Li₂MnO₃ 0.5LiNi_0.5Mn_0.5O₂, was prepared by citric acid-assisted sol–gel method and its electrochemical performance was investigated. It delivered a charge capacity of 270 mAh g^?1 and a discharge capacity of 189 mAh g^?1 in the first cycle. With the increase of current density from 14 to 28 mA g^?1, the discharge capacity dropped severely to 130 mA g^?1. Obviously, the rate capability of the material was inferior to most of the oxide cathode materials. The diffusion coefficient of this material was calculated to be 6.04?×?10^?12 cm² s^?1 from the results of cyclic voltammetry measurements. Moreover, diffusion coefficients between 3.13?×?10^?12 and 1.22?×?10^?10 cm² s^?1 in the voltage range of 3.8–4.7 V were obtained by capacity intermittent titration technique. This, together with the localized Li₂MnO₃ domains in the crystal structure, may validate the poor rate capability.     

Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress

Abstract

Illumination of a double p-Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As heterostructure by a red light emitting diode results in a negative photoconductivity that, after the diode is switched off, slowly relaxes to a positive persistent photoconductivity, characterised by an approximately 1.5-fold increase of the two-dimensional hole concentration. This metastable state may be explained with a model in which deep electron traps are supposed to be located above the Fermi level on the inverted heterointerface. Under uni-axial compression the hole concentration in the persistent photoconductivity state, as well as in the dark state, demonstrates the same linear decrease.