Compositional control of CdxZn1−xSe grown by photoassisted organometallic vapor phase epitaxy

The photoassisted OMVPE growth technique is important for the fabrication of blue/green laser diodes based on Cd_xZn_1−xSe quantum wells. Low temperature growth with photoassistance is key to the fabrication of these devices, however, the compositional control of Cd_xZn_1−xSe becomes increasingly difficult as the growth temperature is reduced. We have studied the compositional control of Cd_xZn_1−xSe using the sources DMCd, DMZn, and DMSe, with irradiation from a Hg arc lamp. We studied the dependence of the composition on the growth temperature, irradiation intensity, and source mass flows. The composition x increases with increasing temperature and decreases with increasing irradiation intensity. The solid-phase composition is a non-linear function of the gas-phase composition X. The slope of this characteristic, dx/dX, should be minimized for good compositional control. At 475°C without photoassistance, dx/dX is 1.75 near a composition of 20%, as determined from the data of Parbrook et al. Decreasing the temperature increases dx/dX. At 370°C with 12 mW/cm², dx/dX ≈ 13 and at 350°C with 58 mW/cm² dx/dX ≈ 60. We have investigated this behavior at 370°C with 12 mW/cm² irradiation by studying both the composition and the growth rate as a function of the gas-phase composition. The growth rate is non-monotonic, and is minimum for a gas-phase composition of 0.20. The behavior is quite complex, and is not fully understood at the present time. Nonetheless, our results indicate that the Cd-bearing precursor is adsorbed much more strongly than the Zn-bearing precursor. In addition to this, the introduction of the DMCd strongly inhibits the growth of ZnSe. We have achieved sufficiently good compositional control at 370°C and 12 mW/cm² to grow ZnSe/Cd_xZn_1−xSe/ZnSe multiple quantum well structures. More work is necessary in order to clarify the roles of irradiation intensity and VI/II ratio so that good compositional control can be achieved at lower growth temperatures.     

Dendrite spacing in unidirectionally solidified Al-Cu alloy

Directional solidification experiments have been carried out to study the variation in primary and secondary arm spacings with solidification parameters in the Al-Cu system. It is found that the primary arm spacing Z₁ obeys the common correlation Z₁ = KG^-aV^-b in the high velocity regime or low temperature gradient regime, where a and b are constants, the value of K included the composition dependence, G is the temperature gradient in the liquid and V the growth rate; however, it does not obey this correlation for the low velocity regime or high temperature gradient regime but goes through a maximum or a catastrophe as a function of V or G at V = V_cs/k or G = kG_cs, where k is the equilibrium distribution coefficient, and V_cs and G_cs are the critical velocity and temperature gradient at the limit of constitutional undercooling respectively. The initial secondary arm spacings Z₂₀ are nearly independent of G and mainly depended on V, Z₂₀ = 0.016 V^-0.54 (mm). The secondary arm spacing Z₂ tends to c oarsen with time and thus is a function of coarsening time t_f, Z₂ = 0.016t^0.34_f (mm). Theoretical analyses of the primary arm spac ing and the initial secondary arm spacing have been proposed, and the derived relationships agree reasonably well with the above experimental results.     

Crystal growth of boron monophosphide using a B2H6-PH3-H2 system

Boron monosphide (BP) with (100) orientation can be epitaxially grown on Si substrates with (100) orientation by thermal decomposition of B₂H₆ and PH₃ in hydrogen. In a horizontal CVD system, the growth rate was studied as a function of gas phase composition and temperature. The growth rate is independent of the PH₃ partial pressure in the region where the PH₃ is in excess. For low values of the B₂H₆ partial pressure the growth rate is proportional to the B₂H₆ partial pressure (a linear region) with an activation energy of 1.8 eV, and for high values of the B₂H₆ partial pressure the growth rate becomes constant (a saturation region) with an acivation energy of 3.0 eV. A simple adsorption-reaction model can be proposed to explain the experimental growth kinetics. The conductivity of the as-grown layer is determined by the PH₃ partial pressure. n-type BP can be obtained for high values of the PH₃ partial pressure and p-type BP for low values. Si doping during the growth and phosphorus anti-site donors are two possibilities to explain the results.     

Hopping controlled time dependent reaction rates for the scavenging of electrons in glasses

Electron scavenging reactions in aqueous glasses are analyzed in a stochastic model and then compared with transient charge transport in thin film amorphous xerographic photo-conductors. In both systems time dependent rate constants need to be introduced which are related to the waiting time distribution governing single transitions. Evidence is presented suggesting that these transitions in at least some aqueous glasses are due to random walk hoppinh as opposed to tunnelling or trapping. A fractional power of an exponential decay law is derived which is consistent with the straight line experimental plots of log [N(0)/N(t)] versus logt, where N(t) is the number of reactants remaining at time t. Algebraic decay laws can also be derived which are related to the kinetics of xerographic photo-currents and to long lifetime phosphorescence.     

Infrared study of SiO2 sol to gel evolution and gel aging

The evolution of the gelation of silica gel was studied by means of Fourier transform infrared spectroscopy. The gel was prepared by hydrolysis and polycondensation of tetraethyl orthosilicate in the presence of water with HCl, and with formamide (DCCA) in methanol either added or not. For both systems the gelation process was followed by the time evolution of the ν-Si---O(H) and ν-Si---O(Si) absorption bands. In the systems which used formamide, the ν-Si---O(H) peak shifts from ≈ν = 950 cm⁻¹ for τ = 0 to ≈ν = 968 cm⁻¹ (t = t_gel) and tends to shifts to 975 cm⁻¹ over a long period of time (t = 100t_gel), and a slow rate evolution between 0.1 and 0.4 t_gel is observed. In the absence of formamide the same evolution is observed without the slow rate plateau. For ν-Si-O(Si) absorption bands, the band near 1075 cm⁻¹ remains practically unchanged in both systems during the experiment time, but the second absorption band at 1133 cm⁻¹ is split into two bands each having its own specific evolution, depending on composition and temperature.     

Effect of steady ampoule rotation on radial dopant segregation in vertical Bridgman growth of GaSe

For vertical Bridgman growth of the nonlinear optical material GaSe in an ampoule sufficiently long that flow and dopant transport are not significantly influenced by the upper free surface, we show computationally that steady rotation about the ampoule axis strongly affects the flow and radial solid-phase dopant segregation. Radial segregation depends strongly on both growth rate U and rotation rate Ω over the ranges 0.25 μms⁻¹U3.0 μms⁻¹ and 0Ω270 rpm. For each growth rate considered, the overall radial segregation passes through two local maxima as Ω increases, before ultimately decreasing at large Ω. Rotation has only modest effects on interface deflection. Radial segregation computed using a model with isotropic conductivity (one-third the trace of the conductivity tensor) predicts much less radial segregation than the “correct” model using the anisotropic conductivity, with the segregation decreasing monotonically with Ω. Consideration of a model in which centrifugal acceleration is deliberately omitted shows that, as Ω increases, diminution and ultimately disappearance of the “secondary” vortex lying immediately above the interface is due to centrifugal buoyancy, while axial distension of the larger “primary” vortex above is due to Coriolis effects. These results, which are qualitatively different from those accounting for centrifugal buoyancy, suggest that several earlier computational and analytical predictions of rotating vertical Bridgman growth are either limited to rotation rates sufficiently low that centrifugal buoyancy is unimportant, or are artifacts associated with its neglect. The overall radial segregation depends approximately linearly on the product of and the growth rate U for the conditions considered, where is the segregation coefficient.     

硅烷热解多晶硅气相沉积反应模型分析与验证

在综述现有硅烷热解反应机理的基础上,针对Ho等人提出的气相和表面反应机理,采用二维边界层反应模型和CHEMKIN软件,对水平单基片CVD反应器进行模拟分析,计算结果与文献报道的实验数据拟合良好;通过改变硅烷进气浓度和进气温度,分析沉积速率的变化和各表面反应的贡献率,得到硅微粉再沉积过程随浓度和温度的变化规律;使用上述机理模型,计算了硅烷流化床对应的操作温度和硅烷浓度条件下的沉积速率,与文献报道测量结果比较,误差在合理范围,表明该机理适用于硅烷流化床化学气相沉积过程的CFD耦合模拟.     

Physical vapor transport growth of mercurous chloride crystals

We have carried out experiments to derive a quantitative understanding of the physical vapor transport (PVT) process and to identify convective effects on the crystal growth process. The experimental growth velocity was several orders of magnitude lower than the theoretically predicted value. The effusion holes were used to disturb the impurity boundary layers. We observed a change of 18% (not an order of magnitude) in growth velocities. The Arrhenius behavior of growth rate with temperature was used to derive the sticking coefficient. Experimental result on growth velocity as the aspect ratio was varied showed that with increasing convection, the growth rate increased up to a certain value and then dropped to a constant value. This indicated that a bifurcation had occured with a resulting change in transport behavior.

Growth velocity measurements for the PVT process as a function of orientation of the g-vector were also made. The experimental results clearly showed that the growth velocity varied with g-vector for a particular temperature profile. The effects of convection on crystal quality were studied by varying the thermal conditions (source and crystal temperatures) which affects thermal convection during PVT. The results showed that crystals grown at low Rayleight numbers had better homogeneity. While no microgravity experiments were conducted, computation of mass flux for the horizontal orientation for various gravitational levels showed two distinct regions; above 10^-3 g where the flow was convective and strong circulating cells appeared, and also below 10^-3 g, where the flow was purely diffusive and no circulating cells were predicted. Therefore it is postulated that for the conditions of growth considered, space flight experiments with acceleration less than 10^-3 g could yield crystals grown under diffusive transport.     

多次热氧化削减硅通孔内壁扇贝纹

硅通孔(TSV)在三维集成系统中扮演着非常重要的角色.BOSCH刻蚀技术是当前主流的硅通孔刻蚀方法,因为刻蚀和钝化交替进行,这种干法刻蚀工艺不可避免地会在硅通孔的内部形成扇贝纹,其尺度一般在几十纳米到几百纳米不等.扇贝纹会导致后续填充的各层材料以及它们之间的界面不平滑,从而严重影响TSV的性能以及三维集成系统的可靠性....     

Vapour phase growth of epitaxial silicon carbide layers

After a brief overview of different epitaxial layer growth techniques, the homoepitaxial chemical vapour deposition (CVD) of SiC with a focus on hot-wall CVD is reviewed. Step-controlled epitaxy and site competition epitaxy have been utilized to grow polytype stable layers more than 50 μm in thickness and of high purity and crystalline perfection for power devices. The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed. Background doping levels as low as 10¹⁴ cm⁻³ have been achieved as well as layers doped over a wide n-type (nitrogen) and p-type (aluminium) range.

Furthermore the status of numerical process simulation is mentioned and SiC substrate preparation is described. In order to get flat and damage free epi-ready surfaces, they are prepared by different methods and characterised by atomic force microscopy and by scanning electron microscope using channelling patterns. For the investigation of defects in SiC high purity CVD layers are grown. The improvement of the quality of bulk crystal substrates by micropipe healing and so-called dislocation stop layers can further decrease the defect density and thus increase the yield and performance of devices. Due to its high growth rate functionality and scope for the use of multi-wafer equipment hot-wall CVD has become a well-established method in SiC-technology and has therefore great industrial potential.     

Small-angle X-ray scattering studies of a-Si1−xGex: H alloys

Small-angle X-ray scattering (SAXS) is used to study a-Si:H, a-Ge:H, and a-Si_1−xGe_x: H alloys prepared by plasma-enhanced CVD methods. These amorphous semiconductors show various types of scattering characteristics related to their composition, deposition method, and deposition conditions. For poor quality alloys at low scattering vectors, h, the scattering curve shows an I(h)h⁻² dependence, because of the fractal nature of the inhomogeneities present. Also, a-Ge:H shows these features. Therefore, it is concluded that the inhomogeneities arise principally from clustering of Ge atoms.     

Crystal growth rate limited by step length — the case of oxygen-deficient TiO2 exposed to oxygen

We study how an oxygen-deficient crystal of TiO₂ crystal grows when exposed to O₂. While the O flux is external to the crystal, the Ti flux necessary for growth comes from internal (bulk) interstitials (Phys. Rev. Lett. 76 (1996) 791). We address where the reaction between O and Ti to form new crystal takes place in the regime of pure step flow (i.e., surface steps advancing without new-layers nucleating). The detailed partitioning of the growth flux among individual surface steps is studied using low-energy electron microscopy for two geometries on the (110) surface—an array of islands on a terrace and an island stack generated from a dislocation source. For both geometries, the areas of islands larger than the critical size grow at rates strictly proportional to their perimeter length, independent of the local step configuration. In addition, we find that the growth rate is proportional to the O₂ pressure. The step flow represents a simple limiting case of crystal growth (Phil. Trans. R. Soc. A. 243 (1951) 299)—only the growth species near a step edge becomes incorporated into the crystal. That is, only Ti and O reactions near the step edge lead to crystal growth. This case is in marked contrast to crystal growth controlled by species attaching to terraces and diffusing to steps, for which the growth rates depend upon the local step environment. Indeed, simulating the island array as if the growth flux was partitioned among the individual islands by concentration gradients (i.e., diffusion-controlled growth) totally failed to reproduce the experimental rates.     

气体流量及配比对CVD SiC膜层的影响

本文以甲基三氯硅烷(MTS)为先驱体原料,H2为载气,采用化学气相沉积工艺在反应烧结碳化硅表面制备SiC致密膜层。研究了不同反应气体流量及配比对CVD碳化硅膜层的影响。结果表明:反应气体的流量对膜层的表面形貌影响较大,较大的气流量容易使膜层剥落;减小反应气体流量有利于改善膜层的均匀性。H2/MTS比例影响沉积SiC膜层的相组成。当沉积温度为1200℃,H2/MTS比例为6∶1时,得到的膜层由SiC和C两相组成;当H2/MTS比例为12∶1时,膜层由SiC和Si两相组成;当H2/MTS比例为10∶1时,得到单一相的SiC膜层。在优化的工艺参数下,制备出致密的CVD膜层,经过光学加工后膜层的表面粗糙度为0.72 nm,平面度RMS为0.015λ(λ=0.6328μm)。     

Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy

Quantitative understanding of reaction mechanisms in organometallic vapor phase epitaxy (OMVPE) is critical for selection of precursors, design of equipment, and optimization of process conditions. Progress has been made in the simulation of fluid flow as well as heat and mass transfer, but predictions of growth rates, alloy composition, and dopant incorporation are limited by the availability of thermodynamic and kinetic data for OMVPE precursors. Chemical kinetic experiments are expensive and difficult to perform, and the organometallic compounds being toxic and/or pyrophoric further complicates the situation. It is therefore desirable to study OMVPE reactions from first principles, quantum chemistry computations. We describe current quantum chemistry methods, Hartree-Fock and post-Hartree-Fock ab initio molecular orbital techniques and density functional theory (DFT) methods, with emphasis on issues related to OMVPE applications. The primary examples in this review are drawn from OMVPE applications, but studies on silicon chemistry are also included to illustrate important elements in simulation of vapor phase growth processes. Molecular structure and energy are reported for trialkyl group III species and group V hydrides by ab initio molecular orbital and density functional theory. The results are evaluated against experimental data. Vibrational frequencies needed for calculation of thermochemical properties (e.g., ΔH and ΔS) at process temperatures are also computed and compared to experimental data. The bimolecular reaction of methyl with arsine exemplifies the combined use of quantum chemistry and transition state theory to predict a reaction rate. A reaction mechanism for thermal decomposition of phosphine further demonstrates the use of these techniques. Lewis-acid-base adduct reactions of group III and V precursors exemplifies the use of quantum chemistry to evaluate adduct bond strengths and potential alkane elimination reaction pathways. A study of thermochemical properties of bridging organometallic aluminum compounds serves to illustrate variations in accuracy among different first principle methods. Overall, the selected examples demonstrate that computational chemistry techniques can provide useful insight into OMVPE chemical processes, but also that additional investigations are needed to establish which methods would be best for particular subsets of OMVPE chemistry.     

Growth of NaBi(WO4)2 crystal by modified-Bridgman method

NaBi(WO₄)₂ (NBW) crystals have been grown for the first time by modified-Bridgman method. Influences of some factors on the crystal growth process are discussed. X-ray powder diffraction experiments show that the unit cell parameters of NBW crystal are a=b=0.5284 nm, c=1.1517 nm, and V=0.3215 nm³. The differential thermal analysis shows that the NBW crystal melts at 923°C.     

Crystal growth of Na(V,Ti)2O5

Large single crystals of quasi-one-dimensional antiferromagnetic spin system NaV_2−zTi_zO₅ (0z0.06) have been successfully grown by a flux method. We present growth conditions together with a characterization of the single crystals by means of X-ray powder diffraction, energy dispersive X-ray (EDX) analysis and magnetic susceptibility measurements.     

RHEED studies of MOMBE growth using TMGa or TEGa with As2

MOMBE and CBE growth has until recently been based on largely empirical studies of the epitaxial process. We have used reflection high energy electron diffraction (RHEED), previously applied to the study of MBE, to study the growth GaAs using TMGa and As₂. In this work we have extended our previous studies to include a detailed study of the effect of As₂ flux on growth rate and to compare data on singular and vicinal plane surfaces cut off orientation in two orthogonal {110} directions. Clear evidence for site blocking mechanisms is observed together with an indication that the concentration of elemental Ga present on the surface during growth is negligible even under conditions where the arrival rate of TMGa exceeds that As₂. We have compared this behaviour with that observed using TEGa and As₂ under identical conditions. Using TEGa a conversion from a (2×4) to (4×2) reconstructed surface is observed under As deficient conditions indicating the presence of elemental Ga on the surface. This is accompanied by an abrupt change in growth rate similar to that secn in MBE.     

The strain energy density of cubic epitaxial layers

We obtain a compact exact expression for the strain energy density of a cubic epitaxial medium in the limit of linear elasticity theory. Only the result for 001 is identical to the isotropic case: the greatest departure from isotropic theory occurs for 111. We have evaluated this difference for a large number of cubic media and have obtained an estimate of its impact on epilayer critical thickness t_c for [001] oriented growth. We suggest that it tends to lower t_c for [001] oriented growth relative to that given by isotropic theory: by 15%–30% for common semiconductors and by up to a factor of 3 for metals.     

Growth mechanisms in excimer laser photolytic deposition of gallium nitride at 500°C

The mechanisms of controlling laser-induced chemical vapour deposition of GaN at substrate temperatures between 350 and 650°C have been investigated. Ultraviolet (193 nm) photolytic decomposition of trimethylgallium (TMGa) and ammonia (NH₃) precursors was examined in this range. Laser-induced fluorescence studies support the view that the dissociated intermediate fragments GaCH₃ and NH are the reacting species in GaN film formation, irrespective of substrate temperature. It was found that two crystal phases coexist in films grown at substrate temperatures below 500°C, wurtzite crystal structure with (0002) orientation forms at substrate temperatures above 500°C. The growth rate increases with both NH₃/TMGa ratio, and TMGa flow rate, while the temperature dependence shows a thermal activation energy of 0.2 eV which is smaller by a factor of five than that of films prepared by conventional thermal CVD. The large NH₃/TMGa ratios needed to achieve stoichiometry are interpreted in terms of the two-photon dissociation cross section of NH₃.     

Rate-determining process in chemical vapor deposition of SiC on off-axis -SiC

Homoepitaxial growth on off-axis α-SiC at reduced pressures in a horizontal cold-wall chemical vapor deposition (CVD) system operating at has been investigated. The growth rate was found inversely proportional to the square root of total pressure or the partial pressure of H₂, a carrier gas. A model to explain the experimental results is proposed, where the rate-determining process in CVD is competition between Si species and hydrogen atoms for C (carbon) dangling bonds at SiC step edges.