Si微电阻桥温度分布与热传导特性的显微Raman光谱研究

采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究，根据Si桥的实际特性建立相应的Raman散射模型，通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度.对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描，得到各点的温升及其分布.用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算，其结果在热导分布的基本趋势上与实验相一致.实验细致地揭示了热导分布的局域起伏，反映出实际器件的不均匀性，为改进器件设计、优化器件性能提供了实验依据. 关键词： Raman光谱 Si桥 温度分布 热导     

固体材料反斯托克斯荧光制冷的理论研究及其最新进展

本文首先回顾了反斯托克斯荧光制冷的历史发展,简单讨论了激光制冷的循环过程及其制冷条件;其次,概述了反斯托克斯Raman散射、反斯托克斯荧光制冷的热力学理论和热力学限制,重点介绍了适用于各种制冷材料(如稀土离子掺杂玻璃、半导体和晶体等)反斯托克斯荧光制冷研究的理论模型,并简单讨论了激光制冷实验中各种测量温度变化的实验方法及其基本原理。最后,就反斯托克斯荧光制冷的一种最新应用及其前景进行了简单介绍与展望。     

惠斯通电桥实验的分析

惠斯通电桥的灵敏度是影响电阻测量精度的一个主要因素。本论文探究了惠斯通电桥的灵敏度与电源的电动势、桥臂的电阻、桥臂的比例之间的关系。理论分析显示了，电路的总电流保持恒定的情况下，桥臂的比例越大，惠斯通电桥的灵敏度越低，电阻测量的精度越低。另外，桥臂的比例保持不变且电路总电流不大的情况下，电路的总电流越大，惠斯通电桥的灵敏度越高，电阻测量的精度越高。实验测量得到的数据肯定了理论分析得到的结论。     

陶瓷压强传感器桥路的温度特性测试

陶瓷压强传感器的输出不仅与外加的压强有关,还与传感器本身的温度有关.温度使惠斯通电桥的桥臂电阻发生变化,由于桥臂电阻与陶瓷片烧结粘合在一起,当陶瓷片受压形变时产生电阻的应变,造成电桥输出电压的变化;当烧结粘合在一起的桥臂电阻和陶瓷片随本身的温度发生变化也会使电桥输出电压发生变化.本文对实验进行了定量地测量,得出了温度对电桥输出电压的影响,建立了修正的数学模型.     

高温超导线材临界温度测量

本文介绍采用实用高温超导线材为样品的高温超导实验 ,该实验采用四点法和互感法两种方法同时测量样品临界温度 ,这样既有超导体零电阻特性又有超导体完全抗磁性的实验结果 ,样品架上安装两个测温传感器 ;铂电阻和Si二极管 ,这可使学生了解导体、半导体P N结、超导体的电阻温度特性 .实验对于学生了解超导体特性、低温物理实验的技术特点和培养严谨的科学作风十分有益     

基于拉曼散射光动态校准的分布式光纤温度传感系统

分布式光纤温度传感(distributed temperature sensor, DTS)系统进行温度测量时,参考光斯托克斯光强度随着温度的升高而增大,使信号光反斯托克斯光与参考光斯托克斯光强度的比值减小,测量温度小于真实温度,降低系统的测温准确度.本文提出并实验验证了一种新的动态校准法修正斯托克斯光信号,可有效减小斯托克斯光导致的测温误差,提高系统的测温准确度.该方法根据参考光纤中的实时斯托克斯光强分布,模拟出对应的整条光纤在参考温度环境中的斯托克斯光强度曲线,实现斯托克斯光的温度响应修正.实验结果表明,与传统温度解调方法相比,分布式光纤温度传感系统进行斯托克斯光动态校准后测温准确度最高提升4.3℃.与瑞利噪声抑制法联用后,测温准确度提高8.9℃.本研究为DTS系统进行高温环境温度监测提供了一种新的解决方案.     

基于多波长布里渊光纤激光器的温度传感特性

为了在高腐蚀、高辐射和强电磁干扰等复杂环境下实现对温度的精确测量,设计并实验了一种基于传感多波长布里渊光纤激光器(MBFL)和参考MBFL的高灵敏度全光纤温度传感器。理论和实验上分析了布里渊散射光的频移与温度变化之间的关系,根据输出斯托克斯激光信号对拍频所得微波信号的频移变化,测量温度的变化。通过带宽为0.1 nm的可调谐光滤波器选择第10阶斯托克斯激光信号对输出,并对其进行拍频探测,实现对传感MBFL周围温度变化的精确测量。通过拍频探测第10阶斯托克斯激光信号对,得出其灵敏度为10.829 MHz/℃。当选用第10阶斯托克斯激光信号对进行温度测量时,温度变化40℃的测量误差约为0.138℃。     

一种利用通电线圈测量风速的方法

当冷空气流过一个通电的发热线圈时,线圈的温度会降低,其最终的温度取决于空气流速。对一个钨线圈通以恒定电流,将其置于风场中,用台式万用表测量线圈两端电压而得到其电阻,再利用电阻-温度特性测得线圈温度,以此达到测量风速的目的。本文将详细探究这一物理过程,从实验进行验证,最终得到一种可靠的测量风速的方法。研究表明：该方法具有较高的测量精度和较短的响应时间,对流场干扰小。     

惠斯通电桥实验中桥臂电阻的确定

惠斯通电桥的灵敏度是影响其测量精度的关键因素。对电压法和电流法惠斯通电桥测电阻实验进行了理论探讨和实验验证,发现电桥灵敏度与桥臂电阻密切相关。提出最佳桥臂电阻的计算公式,为惠斯通电桥的精确测量提供便利。     

基于电阻焦耳热调控3D纳米桥结的临界电流

近些年来, 超导三端子器件通过引入第三端可控变量可以实现单个约瑟夫森结两端临界电流的调控, 受到广泛关注. 本文介绍了一种微缩型的超导三端子器件结构, 通过电阻电流产生的焦耳热来调节3D 纳米桥结附近的局部温度, 从而实现有效调节3D 纳米桥结的临界电流. 本实验利用了两种氩(Ar) 离子表面清洗条件制备获得了两种不同电阻特性的铝(Al) 电阻条, 并且测量表征了这两种电阻条的电流焦耳功率分别与单个和两个3D 纳米桥结的临界电流之间的变化关系. 我们实现了最低使用33 μW 的电阻功率, 来达到单个3D 纳米桥结的临界电流的50% 范围内的调节, 从而验证了本超导三端子器件结构的可实用性.     

Temperature-dependent photoluminescence and Raman spectra from porous GeSi/Si heterostructures

Porous GeSi/Si heterostructures were fabricated by laterally anodization in HF-based solutions. Photoluminescence spectra have been investigated as a function of temperature (77–300 K), showing that porous GeSi has a quite different temperature dependence from that of porous silicon. Raman spectra indicated that the sample structure changed after anodization. Phonon participation and direct recombination of excitons are proposed to be responsible in the light emission processes of porous GeSi and Si, respectively.     

Temperature dependent phonon confinement in silicon nanostructures

Temperature dependent variation in Raman line-shape from silicon (Si) nanostructures (NSs) is studied here. Asymmetry and red-shift in room temperature Raman spectrum is attributed to phonon confinement effect. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Theoretical Raman line-shape analyses of temperature dependence of phonon confinement is done by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement.     

用硅离子注入方法制备的纳米硅的拉曼散射研究

在直角散射配置下测量了纳米硅样品的拉曼散射谱及其退火温度的关系。结果表明,在８００℃以下退火的样品只观察到单晶硅衬底的光学声子模,在９００℃以上退火,才观察到纳米硅的特征拉曼散射峰。在１２００℃下退火后,纳米硅的特征拉曼散射峰消失,观察到类似于非晶硅的光学声子特征峰,可能表示纳米硅不能承受这样的高温热退火。这些结果进一步证实了光致发光谱的结果。     

Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture

We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two-donor sites. In particular, we establish a strong correlation between the temperature dependence of the Raman peak intensity and the interdonor exchange coupling. Micro-Raman scattering can therefore potentially become a powerful tool to measure interqubit coupling in the development of a Si quantum computer architecture.     

Visible photoluminescence from Ge quantum dots

Spectroscopic analyses on stacked Ge quantum dots (QDs) on Si (1 0 0) substrates are presented. Strong and visible photoluminescence around 620 nm from stacked Ge QDs is observed. The luminescence is intense and clearly visible to the naked eye at both room temperature and low temperature. We have investigated the temperature dependence of the luminescence, as well as the composition of Ge dots via transmission electron microscopy and the Raman spectroscopy. Possible causes of the visible luminescence are also speculated in this report.     

Comparative investigation of photoluminescence of silicon wire structures and silicon oxide films

Photoluminescence spectra and their dependence on temperature as well as Raman scattering spectra and Atomic Force Microscopy investigations have been used to study the peculiarities of the red photoluminescence band in low-dimensional Si structures, such as porous silicon and silicon oxide films. It has been shown that the red photoluminescence band of porous silicon is complex and can be decomposed into two elementary bands. It was discovered that elementary band intensities depend very much on surface morphology of porous silicon. The same positions of the photoluminescence bands are also observed in silicon oxide films for different oxide composition. Comparative investigation of the PL temperature dependences in porous silicon and silicon oxide films indicates that silicon-oxide defect related mechanisms of some elementary photoluminescence bands are involved.     

Intensity studies in Raman effect: Effect of temperature: Part I (Liquids)

The influence of temperature on the intensities of Raman lines in some polar and nonpolar liquids has been investigated and certain conclusions regarding the temperature dependence of the intensities of the Raman lines have been arrived at.     

Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy

Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any critical thickness based on mismatch in lattice constant alone, have been shown to be under tensile strain for temperature at or below 300 K. This "thermal" strain arises from the difference in thermal expansion coefficients between GaAs and Si. We have performed Raman experiments on GaAs layers grown on both Si (001) and Si (111) substrates. We have observed a shift in the optical modes towards lower frequencies which is indicative of tensile strain in the GaAs layers, this is greater in the (111) growth direction than in the (001) one. In order to investigate the strain distribution as a function of distance from the GaAs/Si interface we have measured Raman spectra after successive removing of the epitaxial layer by chemical etching. We have found out that the strain decreases with increasing distance from the interface. We have developed the theory of Cerdeira et al. (1) to determine quantitatively the strain present in the heteroepitaxial layers. We have used, for the first time, polarization selection rules to separate the various components of the optical phonon modes. According to the theory we have observed that the doubly degenerate TO phonon line exhibits both a splitting and shift with strain, while only a shift is observed for the LO phonon line. In conformity with Cerdeira we have remarked that the strain dependence of the LO phonon is equal to that of the TO phonon mode observed in crossed polarization configuration.     

Temperature‐dependent Raman scattering study of multiferroic MnWO4

We have measured polarized Raman spectra of MnWO₄ single crystals at low temperatures, and studied the temperature dependence of the various phonon modes. From our Raman studies of the MnWO₄, a new transition temperature, ∼180 K, was found. We have completely assigned the symmetries of the 18 observed Raman modes of the MnWO₄, as expected from a group theoretical analysis. These Raman modes have been classified into three groups according to weak, intermediate and strong temperature dependence of the modes in each group. Six internal modes have been identified by their weak temperature dependence of the Raman wavenumbers. The temperature dependence of the wavenumbers of the B_g modes in Mg O bonds, modes of intermediate temperature dependence group, shows an anomalous behavior under 50 K. The phonon modes of strong temperature dependence show an anomalous change at ∼180 K in the linewidths. This is believed to be a new transition temperature which involves the changes in the inter‐WO₆ octahedra structure. Copyright © 2009 John Wiley & Sons, Ltd.