Effects of passivation treatment on the surface stability in indium-doped Hg0.8Cd0.2Te epilayers grown on p-Cd0.96Zn0.04Te substrates

Passivation treatment on indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg_0.8Cd_0.2Te layers. Room-temperature capacitance–voltage measurements clearly revealed metal-insulator–semiconductor (MIS) behavior for the Al/ZnS/passivated Hg_0.8Cd_0.2Te layer/Cd_0.96Zn_0.04Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg_0.8Cd_0.2Te/Cd_0.96Zn_0.04Te diode with a sulfur-treated Hg_0.8Cd_0.2Te layer were smaller than those with a chemically oxidized Hg_0.8Cd_0.2Te layer. The interface state density at the ZnS/sulfur-treated Hg_0.8Cd_0.2Te interface were low at 10¹¹ eV⁻¹ cm⁻² at the middle of the Hg_0.8Cd_0.2Te energy gap. These results indicate that the Hg_0.8Cd_0.2Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg_0.8Cd_0.2Te layers can be used for Hg_1−xCd_xTe-based MIS diodes and MIS field-effect transistors.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Indium aluminium antimonide (In_1−xAl_xSb) and cadmium mercury telluride (Cd_xHg_1−xTe) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Oxygen diffusion and surface exchange in La1−xSrxFe0.8Cr0.2O3−δ (x=0.2, 0.4 and 0.6)

Oxygen tracer diffusion (D*) and surface exchange rate constant (k*) have been measured, using isotopic exchange and depth profiling by secondary ion mass spectrometry (SIMS), in La_1−xSr_xFe_0.8Cr_0.2O_3−δ (x=0.2, 0.4 and 0.6). Measurements were made as a function of temperature (700–1000 °C) and oxygen partial pressure (0.21–10⁻²¹ atm) in dry oxygen, water vapour and water vapour/hydrogen/nitrogen mixtures. At high oxygen activity, D* was found to increase with increasing temperature and Sr content. The activation energies for D* in air are 2.13 eV (x=0.2), 1.53 eV (x=0.4) and 1.21 eV (x=0.6). As the oxygen activity decreases, D* increases as expected qualitatively from the increase in oxygen vacancy concentration. Under strongly reducing conditions, the measured values of D* at 1000 °C range from 10⁻⁸ cm² s⁻¹ for x=0.2 to 10⁻⁷ cm² s⁻¹ for x=0.4 and 0.6. The activation energies determined at constant H₂O/H₂ ratio are 1.21 eV (x=0.2), 1.59 eV (x=0.4) and 0.82 eV (x=0.6).

The surface exchange rate constant of oxygen for the H₂O molecule is similar in magnitude to that for the O₂ molecule and both increase with increasing Sr concentration.     

Influence of Nd substitution on the superconducting properties of ceramics in the 2212 system Bi2−wPbwSr2−xCa1−yNdx+yCu2O8+z

In the system Bi_2−wPb_wSr_2−xCa_1−yNd_x+yCu₂O_8+z different fractions of Nd are substituted on either Sr of Ca sites in order to introduce intrinsic insulating pinning centres. It is shown that a Nd concentration around x or y = 0.2 is likewise favourable with an average Nd---Nd distance in the range of the coherence length in the a, b-plane. However, clear evidence of flux pinning is only present for charge compensation with Pb²⁺. A simultaneous substitution of the Bi-based 2212 superconductor with moderate amounts of Nd³⁺ and Pb²⁺ improves the superconducting properties by strengthening the flux pinning forces.     

The crystal structure of (Pb0.5Cd0.5)Sr2 (Y1−xCax)Cu2O7

The crystal structures of (Pb_0.5Cd_0.5)Sr₂YCu₂O₇, (Pb_0.5Cd_0.5)Sr₂(Y_0.6Ca_0.4)Cu₂O₇ and (Pb_0.5Cd _0.5)Sr₂(Y_0.5Ca_0.5)Cu₂O₇ have been refined by the Rietveld method for the X-ray diffraction data. The refinement results indicate that both Pb and Cd atoms in the (Pb, Cd)O layers and O(3) atoms are displaced from their ideal sites, and that there is a complicated occupation in the (Pb, Cd)O layers, i.e., other cations, such as Sr²⁺, Cu²⁺ and Ca²⁺, can occupy the (Pb, Cd) site for these samples. This may be the reason why the lattice constants do not vary monotanically with the calcium content, and why there exist broad superconducting transitions in the system (Pb_0.5Cd_0.5)Sr₂(Y_1−xCa_x)Cu₂O₇. The refinement results also indicate that, as the calcium content increases, the O(2) atoms move close to the CuO₂ planes and far from the (Pb, Cd)O layers. Thus, the increase of calcium content results in charge transfer from the charge reservoir layer (Pb, Cd)O to the CuO₂ planes. This result is consistent with the bond valence sums of the Cu ions in the CuO₂ planes.     

Lithium insertion to ReO3-type metastable phase in the Nb2O5–WO3 system

Lithium insertion to distorted ReO₃-type metastable solid solution Nb_xW_1−xO_3−x/2 (0≤x<0.25) has been studied by chemical and electrochemical methods. In the course of lithium insertion into tetragonal compounds, transition to a cubic phase was found to occur in the region where values of y (in Li_yNb_xW_1−xO_3−x/2) fall between 0.2 and 0.3, and the phase transition was found to depend on the conditions of the reaction. Changes in OCV and lattice parameters in tetragonal region (y<0.2) were discussed from the viewpoint of the ordering of lithium ions. Also, the component diffusion coefficient of lithium in tetragonal compounds Li_0.1Nb_xW_1−xO_3−x/2 (0≤x≤0.23) was found to increase with niobium content when x≤0.10, and to saturate at 4×10⁻⁹ cm²/s.     

Oxygen tracer diffusion in La1 − xSrxCoO3

Tracer diffusion of ¹⁸O in dense, polycrystalline La_1−xSr_xCoO₃ for x = 0.1 has been measured in the temperature range 400 to 600 °C and at 500 °C for x = 0.2 at an oxygen partial pressure of 1 × 10⁵ Pa. Depth profiles were obtained by secondary ion mass spectrometry. The diffusion coefficient for La_0.9Sr_0.1CoO₃ is given by D = (17–247) exp[(−232 ± 8 kJ/mole)/RT] cm²/s. This value is several orders of magnitude lower than D extrapolated from the results for x = 0.2 measured in the 700–900 °C temperature range. One possible explanation for the discrepancy is that the two measurements reflect different diffusion paths. As expected, La_0.8Sr_0.2CoO₃ exhibits a higher diffusivity at 500 °C than does La_0.9Sr_0.1CoO₃.     

Preparation and superconductivity of the co-doped superconductor Nd2−x−yCayCexCuO4 with T′ structure

The preparation and superconductivity of the co-doped superconductor Nd_2−x−yCa_yCe_xCuO₄ with T′ structure were studied by XRD and superconductivity measurements. The results indicate that the effect of the co-doping of Ca²⁺ and Ce⁴⁺ on T_O and the carrier type is not significant, but the effect on the range of the superconducting compositions in this system is obvious. The study of co-doped superconductors could be important for an understanding of the effect of co-doping on the carrier concentration and to explore new superconductors.     

Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

负带隙HgCdTe体材料的磁输运特性研究

通过单晶生长了Cd组分为0.1的p型HgCdTe体材料,并制备了具有倒置型能带序的HgCdTe场效应器件.通过磁输运测试,在负带隙HgCdTe体材料中观察到明显的量子霍尔平台效应和Shubnikov-de Haas(SdH)振荡效应,证明样品具有较好的质量.利用SdH振荡对1/B关系的快速傅里叶变换,得到了样品的零场自旋分裂能约为26.55 meV,证明样品中存在强自旋-轨道耦合作用.进一步分析SdH中的拍频节点估算了样品中的有效g因子约为–11.54.     

Superconductivity and crystallographic properties of La2 − xMxCuO4 − δ (M = Na, K)

Superconductivity and crystallographic properties of La_{2 − x}M_xCuO_{4 − δ} (M = Na, K) are studied. In the La_{2 − x}M_xCuO_{4 − δ} system, superconductivity is detected for x 0.2. Oxygen content analysis shows that the system has more oxygen vacancies than the La_{2 − x}Sr_xCuO_{4 − δ} system. These oxygen vacancies may reduce the hole concentration, and high Na-doping is needed to produce superconductivity. In the La_{2 − x}K_xCuO_{4 − δ} system, superconductivity is observed for the first time. Resistivity and magnetic susceptibility measurements show that T_c(onset) is 40 K and the Meissner volume fraction is about 4% for x = 0.7. The system changes from orthorhombic to a tetragonal K₂NiF₄ structure at x ≈ 0.3 and only tetragonal samples show superconductivity.     

Characterization of nonstoichiometric nickel manganite spinels NixMn3−x□3δ/4O4+δ by temperature programmed reduction

Cation deficient spinels Ni_xMn_3−x□_3δ/4O_4+δ (0≤x≤1) have been prepared by thermal decomposition of mixed oxalates Ni_x/3Mn_(3−x)/3(C₂O₄)·nH₂O in air at 623 K. They have been characterised by temperature programmed reduction (TPR) under H₂, the reaction being followed by gravimetric and powder X-ray diffraction measurements. It has been shown that TPR proceeds in several steps. The first steps correspond to the loss of nonstoichiometric oxygen leading to the formation of a stoichiometric oxide. During the following stages the manganese cations are reduced, causing the spinel structure to be destroyed, and the formation of solid solution of NiO in a cubic MnO. Subsequently, Ni²⁺ cations undergo a reduction to metallic nickel, and, finally, a mixture of nonstoichiometric MnO_1−δ and metallic nickel is formed. These oxides contain a high level of vacancies which vary with the nickel content with a maximum of δ≈1 near x=0.6. This nonstoichiometry is ascribed both to the presence of Ni³⁺ and excess of Mn⁴⁺.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

Oxygen nonstoichiometry and phase transitions of the neodymium-rich Nd1+xBa2−xCu3Oz solid solution

On the basis of chemical, thermal analysis and Cu K-edge X-ray absorption measurements, oxygen content in the Nd_1+xBa_2−xCu₃O_z solid solution was determined between 1000°C in air and 400°C in oxygen for x=0.05–0.9 compositions. It has been observed that the oxygen nonstoichiometry Δz of the Nd_1+xBa_2−xCu₃O_7+x/2−Δz solid solution decreases 2–2.5 times for a large substitution (Δz≈0.3–0.33 for x=0.9), despite of the acclaimed higher total oxygen content. The difference in nonstoichiometry is explained by a higher average value of the copper oxidation state (ACV), which is vital for the solid solution with large x even at elevated temperatures (ACV≈2–2.05 for x>0.3 at 1000°C, PO₂=0.21 atm). On the contrary, the ACV after complete oxygenation is almost constant (about 2.25–2.3) for the whole series. The x-dependence of the oxygen content is not monotonous and structural phase transitions can be observed at x=0.3 and x=0.6, as confirmed by the X-ray diffraction and the Raman scattering spectroscopy. The first well-known transition is connected with the oxygen disorder due to the Nd substitution for Ba at random Ba-sites. In the present work, it is proved by the apical oxygen mode broadening in Raman spectra. Ordering of the Nd and Ba atoms with a subsequent orthorhombic distortion of the lattice may occur even at 1000°C in air due to the second transformation at x≈0.6. The invariable orthorhombicity of the Nd-rich solid solution with x>0.6 is not caused by the oxygen absorption as in the x=0.05 case. Existence of high- and low-temperature orthorhombic modifications of this solid solution has been observed for the first time. Finally, a tentative 3D (z–x–T) diagram is suggested for the Nd_1+xBa_2−xCu₃O_z solid solution up to 1000°C in air, including the new x=0.6–0.9 region.     

Crystal structure, electrical and magnetic properties of La1 − xSrxCoO3 − y

The crystal structure and properties of La_{1 − x}Sr_xCoO_{3 − y} with strontium contents ranging from x = 0.1 to x = 0.7 have been studied. The lattice parameters were measured as a function of temperature (4.2–400 K) and the crystal structure was found to change from rhombohedral (at low temperatures and values of x) to cubic. While LaCoO₃ is paramagnetic the oxides in the composition range 0.2 < x < 0.6 are soft ferromagnets. The strontium additions are compensated by the formation of Co⁴⁺ (cobalt ions with one positive effective charge, Co_Co^.) and oxygen vacancies (V_o^..). From the results it is concluded that the relative importance of oxygen vacancies increases with increasing temperature and decreasing oxygen activity. As a result the concentration of electronic charge carriers — and the resultant electrical conductivity — decrease with increasing temperature. The defect structure is discussed and it is concluded that defect associations — probably between oxygen vacancies and strontium ions — and formation of microdomains of perovskite-related phases are important aspects of the overall structure of these perovskite phases.