The influence of oxygen on the growth of silver on Cu(110)

The influence of the (2 × 1)O reconstruction on the growth of Ag on a Cu(110) surface was studied by scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). On the bare Cu(110) surface, Stranski–Krastanov growth of silver is observed at sample temperatures between 277 K and 500 K: The formation of a Ag wetting layer is followed by the growth of three-dimensional Ag wires. In contrast, on the oxygen-precovered Cu(110) surface, the growth of silver depends heavily on the substrate temperature. Upon Ag deposition at room temperature, a homogeneous, polycrystalline Ag layer is observed, whereas at 500 K, three-dimensional wires separated by (2 × 1)O reconstructed areas are formed. The behavior of a deposited Ag layer upon annealing is also influenced greatly by the presence of oxygen. On the bare surface, annealing does not change the Ag wetting layer and gives rise to Ostwald ripening of the Ag wires. On the oxygen-precovered surface, however, the initial polycrystalline Aglayer first transforms into Ag wires at around 500 K. Above this temperature, the depletion of the (2 × 1)O reconstructed areas due to Ag-induced O desorption is balanced by the formation of a Ag wetting layer. On both, the bare and the oxygen-precovered Cu(110) surface, the deposited silver diffuses into the Cu bulk at temperatures above 700 K.     

The structure of Cu{100}-p(2 × 6)-2mg-Sn studied by DFT and LEED

Low Energy Electron Diffraction (LEED) and Density Functional Theory (DFT) have been used to analyse the structure of Cu{100}-p(2 × 6)-2mg-Sn at room temperature. In this work we found that the favoured geometry for this 0.33 ML Cu{100}-Sn phase is a combination of an overlayer structure and a surface alloy; two Sn atoms are alloyed in to the first copper layer and the other two Sn atoms adsorb at off symmetry hollow sites. In order to relieve the stress in the alloyed layer, the alloyed Sn atoms are buckled 0.59/0.45 ± 0.2 Å (DFT/LEED) above the centre of mass of the first layer copper atoms.     

In-situ observation of graphene growth on Ni(111)

Graphene growth of mono-, bi- and tri-layers on Ni(111) through surface segregation was observed in situ by low energy electron microscopy. The carbon segregation was controlled by adjusting substrate temperature from 1200 K to 1050 K. After the completion of the first layer at 1125 K, the second layer grew at the interface between the first-layer and the substrate at 1050 K. The third layer also started to grow at the same temperature, 1050 K. All the layers exhibited a 1 × 1 atomic structure. The edges of the first-layer islands were straight lines, reflecting the hexagonal atomic structure. On the other hand, the shapes of the second-layer islands were dendritic. The edges of the third-layer islands were again straight lines similar to those of the first-layer islands. The phenomena presumably originate from the changes of interfacial-bond strength of the graphene to Ni substrate depending on the graphene thickness. No nucleation site of graphene layers was directly observed. All the layers expanded out of the field of view and covered the surface. The number of nucleation sites is extremely small on Ni(111) surface. This finding might open the way to grow the high quality, single-domain graphene crystals.     

CO adsorption on clean and oxidized Pt3Ti(111)

CO adsorption on clean and oxidized Pt₃Ti(111) surfaces has been investigated by means of Auger Electron Spectroscopy (AES), Thermal Desorption Spectroscopy (TDS), Low Energy Electron Diffraction (LEED) and High Resolution Electron Energy Loss Spectroscopy (HREELS). On clean Pt₃Ti(111) the LEED patterns after CO adsorption exhibit either a diffuse or a sharp c(4 × 2) structure (stable up to 300 K) depending on the adsorption temperature. Remarkably, the adsorption/desorption behavior of CO on clean Pt₃Ti(111) is similar to that on Pt(111) except that partial CO decomposition on Ti sites and partial CO oxidation have also been evidenced. Therefore, the clean surface cannot be terminated by a pure Pt plane. Partially oxidized Pt₃Ti(111) surfaces (< 135 L O₂ exposure at 1000 K) exhibit a CO adsorption/desorption behavior rather similar to that of the clean surface, showing again a c(4 × 2) structure (stable up to 250 K). Only the oxidation of CO is not detectable any more. These results indicate that some areas of the substrate remain non-oxidized upon low oxygen exposures. Heavily oxidized Pt₃Ti(111) surfaces (> 220 L O₂ exposure at 1000 K) allow no CO adsorption indicating that the titanium oxide film prepared under these conditions is completely closed.     

Kinetic Monte-Carlo simulation of the homoepitaxial growth of MgO{001} thin films by molecular deposition

A lattice-based kinetic Monte-Carlo (KMC) code has been developed to investigate the MgO{001} crystal growth from deposition of MgO molecules, as a prototypical case of the growth of oxide thin films. The KMC approach has been designed on the basis of an extensive database including all possible diffusion mechanisms. The corresponding activation energies have been computed through first-principles calculations at zero temperature or from Arrhenius plots of the frequencies obtained by molecular dynamics simulations with empirical potentials. Crystal growth occurs layer by layer, as experimentally observed, and the diffusion of admolecules leads to a high capacity of nucleation, which is enhanced by vacancy diffusion. We have characterized the growth through surface roughness, size distribution and density of the islands, and filling ratios of the growing layers. Moreover, we have analysed the influence of each elementary mechanism on the growth. The best quality of the deposited layers is reached for temperatures larger than 700 K and for pressures smaller than 0.1 Torr. For these conditions, the simulated surface roughness is fully consistent with available experimental results.     

Type B epitaxy of Ge on CaF2(111) surface

It was known experimentally that type B orientation, which is rotated 180° about the [111] axis, dominated the heteroepitaxial growth of Ge(111) on a CaF₂(111) substrate at an elevated temperature. We performed first principles calculations using density functional theory to determine the energetics of the Ge(111)/CaF₂(111) interface and found that the type B orientation of the Ge film is most likely a result of a direct bonding between Ge atoms and Ca²⁺ at the CaF₂ surface with the top F^? layer depleted. Our theoretical prediction is supported by our X-ray diffraction experiments on {111} < 121> biaxially textured Ge/CaF₂ samples.     

Effect of oxygen on the stability of Ag islands on Si(111)-7 × 7

We have used scanning tunneling microscopy to probe the effect of oxygen exposure on an ensemble of Ag islands separated by a Ag wetting layer on Si(111)-7 × 7. Starting from a distribution dominated by islands that are 1 layer high (measured with respect to the wetting layer), coarsening in ultrahigh vacuum at room temperature leads to growth of 2-layer islands at the expense of 1-layer islands, which is expected. If the sample is exposed to oxygen, 3-layer islands are favored, which is unexpected. There is no evidence for oxygen adsorption on top of Ag islands, but there is clear evidence for adsorption in the wetting layer. Several possible explanations are considered.     

Attachment limited versus diffusion limited nucleation of organic molecules: Hexaphenyl on sputter-modified mica

The nucleation and growth of organic molecules is usually discussed in the framework of diffusion limited aggregation (DLA). In this letter we demonstrate for the rod-like organic molecules hexaphenyl (6P) on sputter-modified mica, that under specific experimental conditions the nucleation has to be described by attachment limited aggregation (ALA). The crucial parameter for the growth mode is the roughness of the substrate surface, as induced by ion sputtering. With decreasing surface roughness the diffusion probability of the molecules increases and the growth mode changes from DLA to ALA. This was derived from the deposition rate dependence of the island density. A critical size of i = 7 molecules was determined for the nucleation of 6P on a moderately sputtered mica surface.     

Growth,structure, and thermal stability of epitaxial BaTiO3 films on Pt(111)

The growth of epitaxial ultrathin BaTiO₃ films upon rf magnetron sputter deposition on a Pt(111) substrate has been studied by scanning tunnelling microscopy, low-energy electron diffraction, and X-ray photoelectron spectroscopy. The BaTiO₃ films have been characterized from the initial stages of growth up to a film thickness of 4 unit cells. The deposited films develop a long-range order upon annealing at 1050 K in UHV. In the submonolayer regime a wetting layer is formed on Pt(111). Thicker films reveal a Stranski–Krastanov-like structure as observed with STM. By XPS a good agreement of the thin film stoichiometry with BaTiO₃ single crystal data is determined. Due to annealing at 1150 K BaTiO₃ forms large two-dimensional islands on the Pt(111) substrate. Different surface structures develop on the islands depending on the O₂ partial pressure during annealing.     

Synthesis of epitaxial graphene on rhodium from 3-pentanone

The synthesis of high quality single layer graphene on rhodium, g/Rh(111), is reported. The graphene layers are grown at 1060 K by low pressure chemical vapor deposition (CVD) using 3-pentanone as a precursor molecule. The presented growth technique shows an easy high quality production method for epitaxial graphene monolayers. The chemical composition and structural properties of such self-assembled monolayers were characterized by X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED). Scanning Tunneling Microscopy (STM) confirms the formation of a 3 nm super cell and a unique surface morphology which establishes the potential of g/Rh(111) as a template for molecules.     

Kinetic Monte Carlo simulation of the growth of metal clusters on regular array of defects on insulator

A Kinetic Monte Carlo simulation of the nucleation and growth of Pd clusters on a nanostructured alumina substrate is presented. The new Monte Carlo simulation program allows to derive the 3D shape of the growing clusters without performing a full all atoms simulation. The simulation shows, like in previous pure 2D simulations, that clusters nucleate exclusively on the defects of the nanostructure in a limited range of substrate temperature. Around 300 K, the clusters have a compact faceted shape and they grow, at not too large coverage, layer by layer. These results are in agreement with previous studies of the nucleation and growth of Pd clusters on an ultrathin alumina film on Ni₃Al (1 1 1).     

Dynamical LEED analyses of the clean and the NO-adsorbed Ir(111) surface

The adsorption structure of nitric oxide (NO) on Ir(111) was studied by thermal desorption spectroscopy (TDS) and dynamical analyses of low-energy electron diffraction (LEED). At the saturation coverage at about 100 K, a 2 × 2 pattern was observed by LEED and two peaks appeared at 365 and 415 K in TDS. No change in the LEED I–V curves was observed by annealing at 280 K, which means that the NO-saturated surface was retained at this temperature. On the contrary, partial desorption and changes of the LEED I–V curves were observed by annealing at 360 K. Combined with previous vibrational studies, it is suggested that one adsorption species is not affected, while another species is partially desorbed and the rest of them are dissociated by annealing at 360 K. Dynamical analyses of LEED were performed for the 280 K-annealed and the 360 K-annealed surfaces, which correspond to the NO-saturated and the NO-dissociated Ir(111) surfaces, respectively. These revealed that NO occupies the atop, fcc-hollow and hcp-hollow sites (atop-NO + fcc-NO + hcp-NO) for the NO-saturated Ir(111) surface with the saturation coverage of 0.75 ML. For the 360 K-annealed surface, the atop-NO is not affected but the fcc-NO and the hcp-NO are partially desorbed as NO and partially dissociated to N and O, both of which occupy the fcc-hollow site on the surface.     

Nucleation and growth mechanisms of Fe on Au(111) in the sub-monolayer regime

The growth of Fe on Au(111) at 300 K in the sub-monolayer regime has been investigated using scanning tunneling microscopy, focusing on the mechanisms of nucleation, coalescence and interlayer diffusion. Below a coverage of 0.1 ML, Fe growth proceeds in a well-ordered fashion producing regular arrays of islands, while approaching the island coalescence threshold (above 0.35–0.4 ML), we observed a consistent increasing of random island nucleation. These observations have been interpreted through rate equation models for the island densities in the presence of preferred nucleation sites. The evolution of the second layer fraction has also been interpreted in a rate equation scheme. Our results show that the ordered to random growth transition can be explained by including in the model bond breaking mechanisms due to finite Fe–Fe bond energy. A moderate interlayer diffusion has been inferred from data analysis between the second and the first layer, which has been used to estimate the energy barrier of the adatoms descending process.     

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (5 5 12)?2 × 1 surface and compare it with the observations on planar Si (111)?7 × 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111)?7 × 7 surface. On Si (5 5 12) 2 × 1 surface we observe the sequential 2× (225), 2× (337) and 2× (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.     

Microcalorimetry of O2 and NO on flat and stepped platinum surfaces

Using the single-crystal adsorption calorimeter (SCAC), coverage-dependent heats of adsorption and sticking probabilities are reported for O₂ and NO on Pt{1 1 1}, Pt{2 1 1} and Pt{4 1 1} at 300 K. At low coverage, oxygen adsorption is dissociative for all Pt surfaces. The highest initial heat of adsorption is found on Pt{2 1 1}, with a value of 370 kJ/mol, followed by those on Pt{4 1 1} (310 kJ/mol) and Pt{1 1 1} (300 kJ/mol). We attribute this relatively large difference in the dissociative heat of adsorption at low coverage to the step character of the {2 1 1} surface. Initial sticking probabilities, s_o, are similar for the three surfaces, 0.22 on Pt{1 1 1}, 0.17 on Pt{2 1 1} and 0.18 on Pt{4 1 1}, rapidly decreasing as the oxygen coverage increases. For nitric oxide, the initial heats of adsorption are very similar and consistent with either dissociative or molecular adsorption, with values of 182 kJ/mol on Pt{1 1 1}, 192 kJ/mol on Pt{2 1 1} and 217 kJ/mol on Pt{4 1 1}. The s_o value is virtually identical for all three systems, with values ranging from 0.82 to 0.85, suggesting that the initial sticking probability is insensitive to the surface structure and adsorption is intrinsically precursor mediated. SCAC data are also used to evaluate pre-exponential factors, ν, for first-order desorption at high coverage where adsorption is non-dissociative. Values of 3 × 10¹⁸, 6 × 10¹⁸ and 2 × 10¹⁸ s^?1 for O₂, and 4 × 10¹⁹, 6 × 10¹⁷ and 2 × 10²⁰ s^?1 for NO on Pt{1 1 1}, Pt{2 1 1} and Pt{4 1 1}, respectively, are found. These unexpectedly high values are rationalised in terms of conventional transition state theory entropy changes.     

Strain study of gold nanomaterials as HR-TEM calibration standard

This work presents the use of high resolution electron microscopy (HREM) and geometric phase analysis (GPA) to measure the interplanar spacing and strain distribution of three gold nanomaterials, respectively. The results showed that the {1 1 1} strain was smaller than the {0 0 2} strain for any kind of gold materials at the condition of same measuring method. The 0.65% of {1 1 1} strain in gold film measured by HREM (0.26% measured by GPA) was smaller than the {1 1 1} strains in two gold particles. The presence of lattice strain was interpreted according to the growth mechanism of metallic thin film. It is deduced that the {1 1 1} interplanar spacing of the gold thin film is suitable for high magnification calibration of transmission electron microscopy (TEM) and the gold film is potential to be a new calibration standard of TEM.     

Oxidation of W(110) studied by LEED and STM

The oxidation of W(110) was studied over a temperature a range of 1000 K to 1600 K at 1 × 10^? 6 Torr oxygen. The subsequent oxide structure was then characterized using Low Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM). It was found that the resulting structure was remarkably similar to that of Mo(110) oxidized under similar conditions. Using the Mo(110) oxide structure as our basis, along with atomic resolution STM images, we have constructed a model for the surface oxide of W(110).     

Nucleation and growth of Si on Pb monolayer covered Si(111) surfaces

With a scanning tunneling microscope (STM), we study the initial stage of nucleation and growth of Si on Pb monolayer covered Si(111) surfaces. The Pb monolayer can work as a good surfactant for growth of smooth Si thin films on the Si(111) substrate. We have found that nucleation of two-dimensional (2D) Pb-covered Si islands occurs only when the substrate temperature is high enough and the Si deposition coverage is above a certain coverage. At low deposition coverages or low substrate temperatures, deposited Si atoms tend to self-assemble into a certain type of Si atomic wires, which are immobile and stable against annealing to ~ 200 °C. The Si atomic wires always appear as a double bright-line structure with a separation of ~ 9 Å between the two lines. After annealing to ~ 200 °C for a period of time, some sections of Si atomic wires may decompose, meanwhile the existing 2D Pb-covered Si islands grow laterally in size. The self-assembly of Si atomic wires indicate that single Si adatoms are mobile at the Pb-covered Si(111) surface even at room temperature. Further study of this system may reveal the detailed atomic mechanism in surfactant-mediated epitaxy.     

Variable temperature STM study of Co deposition on a dodecanethiol self assembled monolayer

The present scanning tunneling microscopy study reports on the growth processes of Co vapor-deposited on a dodecanethiol (DDT) self-assembled monolayer (SAM)/Au(111). We observe strongly modified surface and depth diffusions of Co adatoms depending on the growth temperature. Co deposited at 300 K shows an extremely incomplete regime of condensation on the organic layer. Besides, Co penetrates the DDT monolayer and resides at the DDT/Au(111) interface as 2D clusters. This phenomenon takes place through defects in the SAM which are transient channels. In contrast, Co deposited at 50 K shows a complete condensation and nucleates on defects of the SAM layer as 3D islands sitting most likely on top of the DDTs. These results are of interest in the growing field of organic spintronics where the quality of the organic/ferromagnetic interface is a key issue.     

An investigation of the effect of pre-dosed O atoms on the adsorption of NO on Pt{2 1 1}

Reflection absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD) have been used to investigate the effect of pre-dosed O atoms on the adsorption of NO on Pt{2 1 1} at room temperature. RAIRS experiments show that no new species are formed when NO is adsorbed onto a Pt{2 1 1} surface that has been pre-dosed with oxygen and no species are lost from the spectra, compared to spectra recorded for NO adsorption on the clean Pt{2 1 1} surface. However pre-dosed oxygen atoms do influence the frequency and intensity of several of the observed infrared bands. In stark contrast, pre-dosed O has a large effect on the TPD spectra. In particular N₂ and N₂O desorption, seen following NO adsorption on the clean Pt{2 1 1} surface, is completely inhibited. This effect has been assigned to the blocking of NO dissociation by the pre-adsorbed O atoms. A new NO desorption peak, not seen for NO adsorption on the clean Pt{2 1 1} surface, is also observed in TPD spectra recorded following NO adsorption on an oxygen pre-dosed Pt{2 1 1} surface.