Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K: II. Experiments

The spectral noise intensity of the drain current of an n-channel (100) Si-MOSFET in strong inversion was measured as a function of drain current and gate voltage at T = 4.2 K. In addition to flicker noise and white noise it was possible to distinguish a Lorentzian, which was due to generation-recombination noise. Since, at T = 4.2 K, the 2D-electron gas in the MOSFET in strong inversion is degenerate this generation-recombination noise must be caused by traps in the conduction band. The measured noise relaxation time was found to depend on drain current.Our results can be interpreted in terms of a generation-recombination process in which the generation is partly field-induced. Agreement between theory and experiment is within the experimental error, both for the way in which the inverse noise relaxation time depends on drain current and the way in which the ratio of the low frequency plateau of the spectral noise intensity to the noise relaxation time depends on the product of drain current and drain voltage. Measurements of the ratio of the low-frequency plateau of the spectral noise intensity to the relaxation time versus gate voltage at T = 4.2 K we used to construct an energy spectrum of the density of traps in the conduction band. A maximum is observed at about 14meV above the bottom of the conduction band.     

Influence of the semiconductor-oxide interlayer on the AC-behaviour of InSb MOS-capacitors

The admittance of Al-anodic oxide-InSb MOS-capacitors has been studied in the temperature range from 5K to 300K. Capacitance-voltage characteristics reproducibly show a frequency-dispersion in accumulation. By assuming an incompletely oxidized interlayer, it was possible to fit the capacitance-frequency and the conductance-frequency characteristics in accumulation by an appropriate equivalent circuit. Including the semiconductor space charge layer, an observed background of the conductance voltage characteristics can be explained. Furthermore a high frequency capacitance voltage analysis atT=5K was performed: Because of the relative low state density of the InSb conduction band in comparison to, e.g., Si, interface state analysis could be expanded into the bottom of the conduction band. A peak of interface state density around the conduction band edge was found.     

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

The conduction mechanism of stress induced leakage current （SILC） through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress （CVS）. The simulation results show that the SILC is formed by trap-assisted tunnelling （TAT） process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.     

Valence band electron tunneling in metal-oxide-silicon structures

Experimental results are presented for the substrate current appearing in thin oxide metal-oxide-silicon capacitors with a shallow n/p junction beneath the gate when a positive gate voltage in the tunneling regime is applied. The analysis of the current-voltage characteristics shows that for an oxide voltage drop lower than about 5 V the substrate current is due to electron tunneling from the silicon valence band. The dispersion relation in the energy range extending 3 eV below the oxide conduction band is determined from the voltage dependence of the current in the direct tunneling regime. An effective mass of about 0.8m_e is found near the edge of the oxide conduction band, while for lower energies a strong decrease of the effective mass is observed.     

A novel asymmetrically coupled quantum well infrared modulator

A novel high-speed infrared modulator is proposed which uses resonant tunneling and intersubband optical transitions within the conduction band of a semiconductor quantum well. Variations of the applied bias voltage control the amount of light transmitted through the device.     

Symmetrical partial components method in Mössbauer spectroscopy

The symmetrical partial components method (SPCM) is proposed. The method allows the decomposition of Mössbauer spectra into partial components, symmetrical with respect to their gravity centres, independently of the lines profiles. SPCM permits one to determine chemical shifts and quadrupole splittings values with high accuracy. Several examples of SPCM application are given.     

Band-to-band tunneling in carbon nanotube field-effect transistors

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate voltage range for switching the device on or off, current flow is controlled here by the valence and conduction band edges in a bandpass-filter-like arrangement. We discuss how the structure of the nanotube is the key enabler of this particular one-dimensional tunneling effect.     

Intrinsic electrical properties of individual single-walled carbon nanotubes with small band gaps

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT exhibits metal- or semiconductorlike characteristics depending on the Fermi level position in the band structure.     

Generation of Fabry–Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage

We investigate electron transport through Hg Te ribbons embedded by strip-shape gate voltage through using a nonequilibrium Green function technique. The numerical calculations show that as the gate voltage is increased, an edgerelated state in the valence band structure of the system shifts upwards, then hangs inside the band gap and merges into the conduction band finally. It is interesting that as the gate voltage is increased continuously, another edge-related state in the valence band also shifts upwards in the small-k region and contacts the previous one to form a Dirac cone in the band structure. Meanwhile in this process, the conductance spectrum displays as multiple resonance peaks characterized by some strong antiresonance valleys in the band gap, then behaves as Fabry–P′erot oscillations and finally develops into a nearly perfect quantum plateau with a value of 2e~2/h. These results give a physical picture to understand the formation process of the Dirac state driven by the gate voltage and provide a route to achieving particular quantum oscillations of the electronic transport in nanodevices.     

Reprint of : Absorbing/Emitting Phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.     

Influence of interface states,conduction band offset,and front contact on the performance of a-SiC:H(n)/c-Si(p)heterojunction solar cells

P-type silicon heterojunction(SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) SHJ solar cells was investigated systematically. It is shown that the open circuit voltage(V_(oc)) and fill factor(F F) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.     

Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(0 0 1)

The surface band bending in ZnSe(0 0 1), as a function of the temperature, is investigated both in the valence band (by photoemission) and in the conduction band (by inverse photoemission and absorbed current spectroscopies). Two different mechanisms are invoked for interpreting the experimental data: the band bending due to surface states, and the surface voltage induced by the incident beam. While the latter is well known in photoemission (surface photovoltage), we demonstrate the existence of a similar effect in inverse photoemission and absorbed current spectroscopies, induced by the incident electrons instead of photons. These results point to the importance of considering the surface voltage effect even in electron-in techniques for a correct evaluation of the band bending.     

Absorbing/emitting phonons with one dimensional MOSFETs

We consider nanowires in the field effect transistor device configuration. Modeling each nanowire as a one dimensional lattice with random site potentials, we study the heat exchanges between the nanowire electrons and the substrate phonons, when electron transport is due to phonon-assisted hops between localized states. Shifting the nanowire conduction band with a metallic gate induces different behaviors. When the Fermi potential is located near the band center, a bias voltage gives rise to small local heat exchanges which fluctuate randomly along the nanowire. When it is located near one of the band edges, the bias voltage yields heat currents which flow mainly from the substrate towards the nanowire near one boundary of the nanowire, and in the opposite direction near the other boundary. This opens interesting perspectives for heat management at submicron scales: arrays of parallel gated nanowires could be used for a field control of phonon emission/absorption.     

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiN_x gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm²·V^-1·s^-1 in the 2DEG channel, implying a good device performance.     

以一定重复频率工作的KTP倍频效率的演化规律

基于导带电子密度和材料的有效介电函数的表达式,推导了KTP晶体对532 nm光波的吸收系数. 对比研究了不同峰值功率密度和重复频率下KTP晶体的导带电子密度和532 nm吸收系数的演化规律,以及倍频转换效率的演化规律. 结果表明,随着导带电子密度的增加,KTP晶体532 nm吸收系数随之增加,其倍频转换效率随之减小;当基频光入射功率密度一定时,不同重复频率脉冲作用引起的导带电子密度存在积累效应,导致KTP晶体532 nm透过率及倍频转换效率均随着作用时间的增加呈指数形式变化,随着脉冲重复频率的增加其积累效果更加明显,但随着作用时间的增加,导带电子密度、吸收系数均趋于同一稳定值. 关键词： KTP晶体 灰迹 倍频转换效率     

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current–voltage (I–V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs_0.25P_0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and ΔE_c was estimated as 200–240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K.     

掺杂对一维光子晶体带隙传输特性的影响

 基于传输矩阵法,数值研究了掺杂对一维光子晶体带隙特征的影响。研究表明：掺杂时,禁带中心会出现一导带,导带深度会随着掺杂位置、杂质折射率的变化而发生变化。当晶体结构给定时,总存在一个掺杂位置,使其禁带中心的导带深度达到最深;而对于给定的掺杂位置,当杂质折射率为某特定值时,禁带中心同样也会出现一个深度最深的导带,这种特性可应用于滤波器件和光学谐振腔的设计。     

Electronic structure of twinned ZnS nanowires

The electronic properties of twinned ZnS nanowires (NWs) with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal (2H) stacking inside the cubic (3C) stacking has no effect on the electronic properties of thin ZnS NWs.     

锡基钙钛矿太阳能电池载流子传输层的探讨

锡基钙钛矿太阳能电池可避免铅元素对环境带来的污染,近年来已成为光伏领域的研究热点.本文以SCAPS-1D太阳能电池数值模拟软件为平台,对不同电子传输层和不同空穴传输层的锡基钙钛矿太阳能电池器件的性能进行数值仿真对比,从理论上分析不同载流子传输层的锡基钙钛矿太阳能电池的性能差异.结果显示,载流子传输层与钙钛矿层的能带对齐对电池性能至关重要.电子传输层具有更高的导带或电子准费米能级以及空穴传输层具有更低的价带或空穴准费米能级时,对电池输出更大的开路电压有促进作用.另外,当电子传输层的导带高于钙钛矿层导带或钙钛矿层的价带高于空穴传输层的价带时,钙钛矿层与载流子传输层界面形成spike势垒,界面复合机制相对较弱,促使电池获得更佳的性能.当Cd0.5Zn0.5S和MASnBr3分别作为电子传输层和空穴传输层时,与其他材料相比,获得了更优的输出特性:开路电压Voc=0.94 V,短路电流密度Jsc=30.35 mA/cm^2,填充因子FF=76.65%,功率转换效率PCE=21.55%,可认为Cd0.5Zn0.5S和MASnBr3是设计锡基钙钛矿太阳能电池结构合适的载流子传输层材料.这些模拟结果有助于实验上设计并制备高性能的锡基钙钦矿太阳能电池.     

Enhanced magnetotransport at high bias in quasimagnetic tunnel junctions with EuS spin-filter barriers

In quasimagnetic tunnel junctions with a EuS spin-filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions. This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory show excellent agreement with experiment.