Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Efficient fourth harmonic UV generation of passively Q-switched Nd:GdVO4/Cr:YAG lasers

A coherent UV passively Q-switched diode pumped Nd:GdVO₄ laser source is proposed. During pumping of the β-BBO crystal a stable light with power 0.6 W with wavelength 532 nm and pulse duration 9 ns at frequency repetition 16 kHz was applied. The output UV light has a power about 79 mW at wavelength 266 nm during diode-pumping with 8 W incident light.     

Diode-pumped passively Q-switched intracavity frequency doubled Nd:GdVO4/KTP green laser

A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green-pulse laser was demonstrated, using Cr⁴⁺:YAG as a saturable absorber in a simple flat–flat cavity. With a 5.9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397 mW, repetition rate of 40 kHz, and pulse width of 40 ns, when the initial transmission of Cr⁴⁺:YAG was 85%. The shortest pulse width of 30 ns, the highest green peak power of 696 W and the maximum pulse energy of 21 μJ were obtained when the initial transmission of Cr⁴⁺:YAG was 70%. Under CW green operation, we obtained 440 mW output power.     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

LD-pumped actively Q-switched Nd:GdVO4/KTP red laser

LD-pumped actively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP red laser has been introduced. A maximum red average output power of 0.78 W at 671 nm was obtained at pulse-repetition frequency (PRF) of 15 kHz and the optical conversion efficiency was 6.5%. At the incident pump power of 12 W, the shortest laser pulse occurred at PRF of 15 kHz. Its full-width at half-maximum and the highest peak power were measured to be 35.8 ns and 3.38 kW. The largest single pulse energy of 56.3 μJ was achieved at PRF of 10 kHz. The influence factors on the Q-switched Nd:GdVO₄/KTP red laser have been discussed.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Passively Q-switched self-frequency doubling Nd:Ca4GdO(BO3)3 laser with Cr:YAG saturable absorber

Nd³⁺ : Ca₄GdO(BO₃)₃, known as Nd : GdCOB, is a new self-frequency doubling laser crystal. Using Cr⁴⁺ : YAG as passive Q-switch, we have realized the Q-switched laser running at 0.53 μm with an Nd : GdCOB crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under different small-signal transmission of Cr⁴⁺ : YAG and different pump conditions are measured and the numerical solutions of the coupling wave rate equations agree with the experimental results.     

Passively Q-switched Nd:GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO₄ laser operating at 1.06 μm with In_0.25Ga_0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 μJ and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W.     

Diode-pumped Q-switched Nd:GdVO4/KTP green laser formed with a flat–flat resonator

A diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser formed with a flat–flat resonator was demonstrated. 3.05 W of average green output power at pulse repetition frequency (PRF) of 40 kHz was obtained with an optical conversion efficiency of 18.4%, the effective intracavity frequency-doubling efficiency was 57%. At the incident pump power of 15 W, the shortest laser pulse occurred at PRF of 25 kHz with FWHM width of 14 ns, yielding the highest peak power of 7.44 kW; while the largest pulse energy of 0.14 mJ was achieved at PRF of 15 kHz.     

LD抽运Nd:LuVO4微片激光器性能研究

报道了一类新型的LD端面抽运Nd：LuVO₄微片激光器，讨论了在不同掺杂浓度，不同厚度和不同透过率下的激光性质，测定了在不同抽运功率下，微片最佳激光输出功率与LD抽运温度的关系.在2W抽运功率下获得923mW的1064nm激光输出，阈值为48mW，斜效率为52%.对微片制冷后斜效率提高到59%. 关键词： LD抽运 微片激光器 4')" href="#">Nd：LuVO₄     

LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Characteristics of a passively Q-switched Nd:NaY(WO4)2 laser with Cr:YAG saturable absorber

By using xenon flash lamp as pump source and Cr⁴⁺:YAG as passive Q-switcher, we have performed the Q-switched laser operation at 1.06 μm with an Nd³⁺:NaY(WO₄)₂ (known as Nd:NYW) crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under different small-signal transmissions of Cr⁴⁺:YAG and different reflectivities of output reflector are measured, and the numerical solutions of the coupling wave rate equations agree with the experimental results.