Nonuniform growth of embedded silicon nanocrystals in an amorphous matrix

The phase transformation of a metastable system occurs when islands of a second stable phase form and grow. The growth velocity of the islands controls the kinetics of the phase transformation. In this work we consider the amorphous-to-crystalline transformation in silicon as the prototype of a solid-to-solid transformation. The results of atomistic simulations are fit using an analytic model for the growth of [100]-oriented nanosized crystalline fibers embedded into an amorphous matrix. We demonstrate that the radius of the island does not grow, in general, at constant velocity. On the contrary, we identify a decelerated motion that is due to anisotropic effects of the crystal grain. Such a nonuniform growth should be taken into account in the modeling of solid-to-solid crystallization.     

Interfacial evolution of a spherical particle in a uniaximal straining flow

The growth behavior of a spherical particle in undercooled melt,affected by uniaxial straining flows,is studied.The analytical solution obtained by the matched asymptotic expansion method shows that the uniaxial straining flow effect results in higher local growth rate near the surface where the flow comes in and lower local growth rate near the surface where the flow goes out,and that the uniaxial straining flow causes an initially spherical particle to evolve into an oblate spheroid.     

有限磁场作用下等离子体背景中的切伦可夫不稳定性研究

 较高密度的相对论电子束注入等离子体中将会形成离子通道，在考虑了离子通道的影响下，推导出圆柱波导中更普遍的色散方程，并计算出考虑离子通道和不考虑离子通道效应时的色散关系及电磁波的增长率。     

有限磁场作用下等离子体背景中的切伦可夫不稳定性研究

较高密度的相对论电子束注入等离子体中将会形成离子通道,在考虑了离子通道的影响下,推导出圆柱波导中更普遍的色散方程,并计算出考虑离子通道和不考虑离子通道效应时的色散关系及电磁波的增长率。     

A study of void size growth in nonequilibrium stochastic systems of point defects

We study properties of voids growth dynamics in a stochastic system of point defects insolids under nonequilibrium conditions (sustained irradiation). It is shown thatfluctuations of defect production rate (external noise) increase the critical void radiuscomparing to a deterministic system. An automodel regime of void size growth in astochastic system is studied in detail. Considering a homogeneous system, it is found thatexternal noise does not change the universality of the void size distribution function;the mean void size evolves according to classical nucleation theory. The noise increasesthe mean void size and spreads the void size distribution. Studying dynamics of spatiallyextended systems it was shown that vacancies remaining in a matrix phase are able toorganize into vacancy enriched domains due to an instability caused by an elastic latticedeformation. It is shown that dynamics of voids growth is defined by void sinks strengthwith void size growth exponent varying from 1/3 up to 1/2.     

Examining GDP Growth and Its Volatility: An Episodic Approach

In this paper, we study economic growth and its volatility from an episodic perspective. We first demonstrate the ability of the genetic algorithm to detect shifts in the volatility and levels of a given time series. Having shown that it works well, we then use it to detect structural breaks that segment the GDP per capita time series into episodes characterized by different means and volatility of growth rates. We further investigate whether a volatile economy is likely to grow more slowly and analyze the determinants of high/low growth with high/low volatility patterns. The main results indicate a negative relationship between volatility and growth. Moreover, the results suggest that international trade simultaneously promotes growth and increases volatility, human capital promotes growth and stability, and financial development reduces volatility and negatively correlates with growth.     

Diffusion versus sticking anisotropy: Anisotropic growth of organic molecular films

The molecular/crystal orientation and morphology of active molecular structures is a key determinant for the function of nanoscaled organic devices, yet little is known regarding the processes that govern thin film growth. Here, we show that either sticking or diffusion anisotropy can control the growth depending on preparation conditions. This is illustrated by an investigation into the growth of sexiphenyl (6P) on the anisotropic TiO₂(1 1 0)-(1 × 1) single crystal surface. The great differences in crystallite orientation and morphology observed are explained by the domination of the growth kinetics by either sticking or diffusion anisotropy depending on growth temperature.     

Space-charge driven emittance growth in a 3D mismatched anisotropic beam

We investigate the phenomenon of space-charge driven emittance growth in a three-dimensional mismatched anisotropic charged particle beam with relevance to high-intensity linear accelerators. The final emittance growth can be understood as a superposition of the contributions from the mismatch-induced halo formation and from the anisotropy-induced energy exchange. The averaged emittance growth per degree of freedom is bounded from above by the so-called "free energy limit" extended by the contributions from energy exchange. The partition of the growth into longitudinal or transverse is, however, a strong function of the tune ratio including the possibility that an initially equipartitioned beam is even driven substantially away from equipartition. The growth of the beam halo extent is dominated by the effect of mismatch, whereas anisotropy itself generates practically no halo.     

Endotaxial silicide nanowires

We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width of the islands increase with time in a fixed proportion that varies strongly with growth temperature, which shows that the nanowire shape is kinetically determined. It is expected that nanowires could form in many other overlayer/substrate systems via this mechanism.     

Controllable growth and characterization of isolated single-walled carbon nanotubes catalyzed by Co particles

Discrete Co catalytic nanoparticles with small diameters are obtained by pulsed vacuum arc evaporation on Si/SiO₂ substrates, which are used for the growth of isolated single-walled carbon nanotubes (SWNTs) by an ethanol chemical vapor deposition approach (CVD). The distributions of catalytic nanoparticles change with the number of arc pulses, which allows control of the nanotubes formation. We find that an increase of ethanol pressure during CVD growth can change SWNTs from isolated ones into bundles. A new growth mechanism which combines a tip and base model for SWNT growth has been tentatively proposed. It is suggested that the small size catalytic particles prepared by pulsed arc evaporation have a potential advantage for small diameter SWNT growth. PACS 78.67.Ch; 78.67.Bf; 78.67.-n; 81.07.De; 61.46.-w     

Two-scale modeling of adsorption processes at structured surfaces

We present an algorithm for the simulation of vicinal surface growth. It combines a lattice gas anisotropic Ising model with a phase-field model. The molecular behavior of individual adatoms is described by the lattice gas model. The microstructure dynamics on the vicinal surface are calculated using the phase-field method. In this way, adsorption processes on two different length scales can be described: nucleation processes on the terraces (lattice gas model) and step-flow growth (phase field model). The hybrid algorithm that is proposed here, is therefore able to describe an epitaxial layer-by-layer growth controlled by temperature and by deposition rate. This method is faster than kinetic Monte Carlo simulations and can take into account the stochastic processes in a comparable way.     

Stabilization of tearing mode by current drive

The major disruption limits the operation of present tokamaks. Experimental evidences point out that the growth of tearing modes or the magnetic islands is primarily responsible for the occurrence. Taking the non-inductive current drive effects into account, a set of 3D nonlinear equation is derived. It is shown from simulation that the growth of the magnetic island is suppressed effectively by RF current drive. It is consistent with recent experiments on the HL-1 tokamak in which the plasma is stabilized by an RF current drive.     

SrTiO_3(001)衬底上多层FeSe薄膜的分子束外延生长

近几年,由于用分子束外延法在SrTiO_3衬底表面制备的单层FeSe具有很高的超导转变温度而引发了极大的研究热潮,随之而来的是对多层FeSe薄膜日益增长的研究兴趣.但目前还没有对成功生长高质量多层FeSe薄膜的详细报道.本文利用高能电子衍射仪(RHEED)实时监控在不同生长条件下制备的多层FeSe薄膜,发现在FeSe薄膜的生长初期,RHEED图像的强度演化基本符合台阶密度模型的描述特征,即台阶密度ρ正相关于衍射条纹强度.FeSe(02)衍射条纹的强度在第一生长周期内呈现稳定而明显的峰型振荡,而且不受高能电子掠射角的影响,最适合用来标定FeSe薄膜的厚度.结合扫描隧道显微镜对FeSe薄膜质量的原位观察,确定了制备多层FeSe薄膜的最佳生长条件,为FeSe薄膜的物性研究提供了重要的材料基础.     

基于等离子体腔表面增强拉曼效应的研究

金属离子水滴与液态聚二甲基硅氧烷（PDMS）自发形成的等离子体腔作为一种新型的表面增强拉曼（SERS）基底将等离子体纳米颗粒整合到光学装置中，提高了SERS检测的实用性与可靠性，然而，与其他基底相比，对其最佳生长条件的研究很少。在此，用禁用兽药孔雀石绿（MG）作为探测分子，检验不同生长条件下等离子体腔的特性，包括生长温度和金属离子浓度，以研究等离子体腔的最佳生长条件。金属离子水溶液滴加到互不相容的液态PDMS上时，在表面张力和重力的共同作用下自发形成带开口的球形腔体。同时金属离子扩散到未固化的PDMS中并与残留的Si-H基团反应，金属离子逐渐还原成金属纳米颗粒，并随着PDMS的固化过程在腔体表面逐渐累积，最终形成等离子体腔。其不但能作为角度反射器将入射光限制在腔体中，而且可作为纳米级光子源将吸收的光散射到腔体中，这两个功能共同作用可在基底原本增强作用的基础上进一步提高对MG的拉曼增强效果。较高的生长温度在加快金属离子生长的同时也会加速PDMS的固化，以至于提前结束金属纳米粒子的生长过程。离子浓度越高，形成的金属离子颗粒越大，然而颗粒直径过大，等离子体腔表面的热点数量反而会减少，MG的拉曼增强减弱，因而，必定存在最优化的等离子体腔制备条件使基底对MG的增强效果达到最佳。设置了15，20，25和30 ℃的生长温度以及0.05，0.5，5和50 μg·mL-1的离子浓度，结果表明，在温度为25 ℃，0.5 μg·mL-1的生长条件下等离子体腔实现了对MG的最佳拉曼增强。对等离子体腔生长条件的优化，可为提高该类型基底的SERS增强效果，及可重复制备奠定基础。     

粘塑性介质中球形孔洞的动态增长

 提出了一个新的粘塑性介质中球形孔洞在高加载率作用下的演化方程。方程中考虑了应变率、局部惯性和介质的硬化效应，并对这些影响进行了数值分析和讨论。数值分析结果表明：孔洞的增长对外加载率和应变率十分敏感，在高加载率条件下局部惯性效应对孔洞增长有着重要影响，随着加载率的增加，这种影响增大。另外，得到了使孔洞增长的临界应力值的表达式。     

Phase-field modeling of faceted growth in solidification of alloys

A regularization of the surface tension anisotropic function used in vapor-liquid-solid nanowire growth was introduced into the quantitative phase-field model to simulate the faceted growth in solidification of alloys. Predicted results show that the value of δ can only affect the region near the tip, and the convergence with respect to δ can be achieved with the decrease of δ near the tip. It can be found that the steady growth velocity is not a monotonic function of the cusp amplitude, and the maximum value is approximately at ε=0.8 when the supersaturation is fixed. Moreover, the growth velocity is an increasing function of supersaturation with the morphological transition from facet to dendrite.     

Formation of bcc-Ni thin film on GaAs(100) substrate and phase transformation from bcc to fcc

Ni thin films are prepared on GaAs(100) single-crystal substrates at room temperature by using an ultra-high vacuum radio-frequency magnetron sputtering system. The growth behavior and the crystallographic properties are studied by in-situ refection highenergy electron diffraction and pole-figure X-ray diffraction. In an early stage of film growth, a metastable bcc Ni(100) single-crystal film is formed on GaAs(100) substrate, where the bcc structure is stabilized through hetero-epitaxial growth. With increasing the film thickness, fcc crystals coexist with the bcc(100) crystal. High-resolution cross-sectional transmission electron microscopy shows that the film consists of a mixture of bcc and fcc crystals and that a large number of planar faults exist parallel to the fcc(111) close-packed plane. The results indicate that the bcc structure starts to transform into fcc structure through atomic displacement parallel to the bcc{110} close-packed planes.     

Linear analysis of cyclotron-cherenkov and cherenkov instabilities in dielectric-loaded coaxial waveguides

We present, based on the cold fluid theory, linear analysis of the Cherenkov and cyclotron-Cherenkov instabilities which are driven when a linear electron beam is injected into a dielectric-loaded waveguide immersed in an axial magnetic field. In the analysis we consider azimuthally symmetric TM_0n modes. We derive dispersion relations for three types of waveguide, and compare computationally obtained linear growth rates of both instabilities. For the type A, which consists of a metallic cylinder with dielectric liner on its inner surface, the growth rate of the Cherenkov instability is larger than that of the cyclotron-Cherenkov instability. For the type B, which consists of a dielectric core and an outer metallic cylinder, both growth rates are comparable. And for the type C, which consists of a metallic core with dielectric liner on its surface and an outer metallic cylinder, the growth rate of the latter instability is higher than that of the former instability. Finally, for the type C, obtained are dependences of the oscillation frequency and the growth rates of both instabilities on the following parameters: the beam energy, the beam current, the axial magnetic field, the dielectric constant, and the thickness of the dielectric.     

Adatom concentration on GaAs(001) during MBE annealing

We study the concentration of adatoms on GaAs(001) during annealing under MBE conditions. By rapidly cooling the sample from typical growth temperatures and typical As overpressures, the thermal concentration of adatoms can be frozen into small islands on the terraces. The area of the resulting islands is measured with STM far from terrace steps, giving an estimate of the concentration of adatoms during equilibrium. We find that a surprisingly large concentration of adatoms is present for typical growth temperatures, e.g. 0.18 monolayer at 600°C. Possible consequences for current growth models are discussed.