Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current–voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.     

Microstructural and optical properties of multiple closely stacked InAs/GaAs self-assembled quantum dot arrays

The microstructural and the optical properties of multiple closely stacked InAs/GaAs quantum dot (QD) arrays were investigated by using atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The AFM and the TEM images showed that high-quality vertically stacked InAs QD self-assembled arrays were embedded in the GaAs barriers. The PL peak position corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E₁-HH₁) of the InAs/GaAs QDs shifted to higher energy with increasing GaAs spacer thickness. The activation energy of the electrons confined in the InAs QDs increased with decreasing with GaAs spacer thickness due to the coupling effect. The present results can help to improve the understanding of the microstructural and the optical in multiple closely stafcked InAs/GaAs QD arrays.     

Magnetoplasmon excitations in quantum dot arrays

Motivated by the far-infrared transmission experiments of Demel et al., we have investigated the magnetoplasmon excitations in an array of quantum dots within the Thomas–Fermi–Dirac–von Weizsäcker (TFDW) approximation. Detailed calculations of the magnetic dispersion and power absorption from a uniform radiation field unambiguously demonstrates that the noncircular symmetry of the individual dots is responsible for the anticrossing behaviour observed in the experiments. The interdot Coulomb interaction is unimportant at the interdot separation of the samples studied.     

Electron teleportation with quantum dot arrays

An electron teleportation protocol, inspired by the scenario by Bennett et al., is proposed in a mesoscopic set-up. A superconducting circuit allows to both inject and measure entangled singlet electron pairs in an array of three normal quantum dots. The selection of the teleportation process is achieved in the steady state with the help of two superconducting dots and appropriate gating. Teleportation of the electron spin is detected by measuring the spin-polarized current through the normal dot array. This current is perfectly correlated to the pair current flowing inside the superconducting circuit. The classical channel required by Bennett's protocol, which signals the completion of a teleportation cycle, is identified with the detection of an electron pair charge in the superconducting circuit. Received 10 December 2002 / Received in final form 14 March 2003 Published online 7 May 2003     

Tunable quantum dot resonator embedded in a quantum wire

Combined quantum wire and quantum dot system is theoretically predicted to show unique conductance properties associated with Coulomb interactions. We use a split gate technique to fabricate a quantum wire containing a quantum dot with two tunable potential barriers in a two-dimensional electron gas. We observe the effects of the quantum dot cavity on the electron transport through the quantum wire, such as Coulomb oscillations near the pinch-off voltage and periodic conductance oscillations on the first conductance plateau.     

Resonant Raman scattering from CdTe/ZnTe self-assembled quantum dot structures

We report resonant Raman scattering results of CdTe/ZnTe self-assembled quantum dot (QD) structures. Photoluminescence spectra reveal that the band gap energies of the CdTe QDs decrease with the increase of CdTe thickness from 2.0 to 3.5 monolayers, which indicates that the size of the QDs increases. When the CdTe/ZnTe QD structures are excited by non-resonant excitation, a longitudinal optical (LO) phonon response from the ZnTe barrier material is observed at 206 cm⁻¹. In contrast, when the CdTe/ZnTe QD structures are resonantly excited near the band gap energy of the QDs, additional phonon modes emerge at 167 and 200 cm⁻¹, while the ZnTe LO phonon response completely disappears. The 167 cm⁻¹ mode corresponds to the LO phonon of the CdTe QDs. A spatially resolved Raman scattering from the cleaved edge of the QD sample reveals that the 200 cm⁻¹ mode is strongly localized at the interface between the CdTe QDs and ZnTe cap layer. This phonon mode is attributed to the interface optical (IO) phonon. The analytically calculated value of the IO phonon energy using a dielectric continuum approach, assuming a spherical dot boundary, agrees well with the experimental value.     

Multiple cotunneling in large quantum dot arrays

We investigate the effects of inelastic cotunneling on the electronic transport properties of gold nanoparticle multilayers and thick films at low applied bias, inside the Coulomb-blockade regime. We find that the zero-bias conductance, g(0)(T), in all systems exhibits Efros-Shklovskii-type variable range hopping transport. The resulting typical hopping distance, corresponding to the number of tunnel junctions participating in cotunneling events, is shown to be directly related to the power-law exponent in the measured current-voltage characteristics. We discuss the implications of these findings in light of models on cotunneling and hopping transport in mesoscopic, granular conductors.     

Tunable Fermi-edge resonance in an open quantum dot

Resonant tunneling in an open mesoscopic quantum dot is proposed as a vehicle to realize a tunable Fermi-edge resonance with variable coupling strength. We solve the x-ray edge problem for a generic nonseparable scatterer and apply it to describe tunneling in a quantum dot. The tunneling current power law exponent is linked to the S matrix of the dot. The control of scattering by varying the dot shape and coupling to the leads allows us to explore a wide range of exponents. The sensitivity of mesoscopic coherence to the Wigner-Dyson ensemble symmetry is replicated in the Fermi-edge singularity.     

Tunable nonadiabatic excitation in a single-electron quantum dot

We report the observation of nonadiabatic excitations of single electrons in a quantum dot. Using a tunable-barrier single-electron pump, we have developed a way of reading out the excitation spectrum and level population of the dot by using the pump current as a probe. When the potential well is deformed at subnanosecond time scales, electrons are excited to higher levels. In the presence of a perpendicular magnetic field, the excited states follow a Fock-Darwin spectrum. Our experiments provide a simple model system to study nonadiabatic processes of quantum particles.     

Insulating state in open quantum dots and quantum dot arrays

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e²/h.     

Stimulated emission from the biexciton in a single self-assembled II-VI quantum dot

Using two-photon excitation, stimulated emission from the biexciton state in a single CdSe/ZnSe quantum dot is observed in a two-pulse configuration. We directly time resolve the emission-absorption characteristics and verify the potential for laser action. By setting the polarization of the stimulation pulse, the recombination path of the biexciton and, by this, the state of the photons emitted in the decay cascade is controlled. We elaborate also the coherent response and address entanglement and disentanglement of the exciton-biexciton system.     

Tunable noise cross correlations in a double quantum dot

We report measurements of the cross correlation between temporal current fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and source-drain bias. We find good agreement with the data by including an interdot Coulomb interaction in a sequential-tunneling model.     

Tunable supercurrent in a parallel double quantum dot system

The supercurrent through an Aharonov-Bohm interferometer containing two parallel quantum dots connected with two superconductor leads is investigated theoretically. The possibility of controlling the supercurrent is explored by tuning the quantum dot energy levels and the total magnetic flux. By tuning the energy levels, both quantum dots can be in the on-resonance or off-resonance states, and thus the optimal modulation of the supercurrent can be achieved. The supercurrent sign does not change by simply varying the quantum dot energy levels. However, by tuning the magnetic flux, the supercurrent can oscillate from positive to negative, which results in the π-junction transition.     

Tunable supercurrent in a triangular triple quantum dot system

The supercurrent in a triangular triple quantum dot system is investigated by using the nonequilibrium Green's function method. It is found that the sign of the supercurrent can be changed from positive to negative with increasing the strength of spin-flip scattering, resulting in the π-junction transition. The supercurrent and the π-junction transition are also modulated by tuning the system parameters such as the gate voltage and the interdot coupling. The tunable π-junction transition is explained in terms of the current carrying density of states. These results provide the ways of manipulating the supercurrent in a triple quantum dot system.     

One-dimensional single (In,Ga)As quantum dot arrays formed by self-organized anisotropic strain engineering

Well-defined one-dimensional single (In,Ga)As quantum dot (QD) arrays have been successfully formed on planar singular GaAs (1 0 0) in molecular beam epitaxy by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template. The distinct stages of template formation, which govern the uniformity of the QD arrays, are directly imaged by atomic force microscopy (AFM). The AFM results reveal that excess strain accumulation causes fluctuations of the QWR template and the QD arrays. By reducing the amount of (In,Ga)As and increasing the GaAs separation layer thickness in each SL period, the uniformity of the QD arrays dramatically improves. The single QD arrays are straight over more than 1 μm and extended to 10 μm length. Capped QD arrays show clear photoluminescence emission up to room temperature.     

Tunable characteristic of phase-locked quantum cascade laser arrays

A multimode interference(MMI) structure is designed to simplify the fabrication of quantum cascade laser(QCL)phase-locked arrays. The MMI geometry is optimized with a sufficient output channel distance to accommodate conventional photolithography and wet etching process by which power amplifier array is fabricated without using the complicated two-step etching-regrowth or dry etching technique. The far-field pattern with periodically modulated peaks reveals that the beams from the arrays are phase-locked. Furthermore, the frequency tuning performance of the MMI-based phase-locked arrays is studied using the Littrow-configuration external cavity structure. A wavelength tuning range of more than 60 cm~(-1) is demonstrated, which will eventually realize the high power, frequency tunable, large-scale phase-locked arrays, and their application in spectroscopy.     

Strong optical field study of a single self-assembled quantum dot

We review the investigation of a single quantum dot driven by a strong optical field. By coherent pump-probe spectroscopy, we demonstrate the Autler–Townes splitting and Mollow absorption spectrum in a single neutral quantum dot. Furthermore, we also show the typical Mollow absorption spectrum by driving a singly charged quantum dot in a strong optical coupling regime. Our results show all the typical features of an isolated atomic system driven by a strong optical field, such as the AC stark effect, Rabi side bands and optical gain effect, which indicate that both neutral and charged quantum dots maintain the discrete energy level states even at high optical field strengths.     

Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands

By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs(001) quantum dot(QD) islands are studied, which shows that a higher temperature, a lower flux rate and a longer growth time correspond to a better island distribution. The relations between the number of islands and the temperature and the flux rate are also successfully simulated. It is observed that for the total coverage lower than 0.5 ML, the number of islands decreases with the temperature increasing and other growth parameters fixed and the number of islands increases with the flux rate increasing when the deposition is lower than 0.6 ML and the other parameters are fixed.     

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

We report about spatially resolved magneto-optical experiments on a self-assembled InGaAs quantum dot. Using electron beam lithograpy for patterning a metal shadow mask we can isolate a single dot. This allows us to study the optical response of a single dot as a function of excitation power and magnetic field. We investigate the influence of many body interaction in the emission spectra for different exciton occupation numbers of the dot. The diamagnetic/orbital shift as well as Zeeman splitting in a magnetic field can be fully resolved and are used to identify the observed emission lines. Further we report on absorption properties of the quantum dot as a function of magnetic field. We analyse in detail the phonon-assisted absorption process connected with the GaAs LO-phonon 36 meV above the single-exciton ground state.