Effect of manganese ions concentration on the anatase–rutile phase transformation of TiO2 films

The phase structures of Ti_1?xMn_xO₂ (0?x<0.08) films synthesized by sol–gel spin coating have been investigated. The effect of Mn dopants on the stability of titanium dioxide (TiO₂) was studied by X-ray diffraction and Raman spectra for isochronally annealed samples. The increased Mn dopant concentration decreased the onset temperature of anatase–rutile (A–R) phase transformation. The calculated activation energy for the phase transformation decreased from 173.6 to 89.4 kJ/mol with Mn dopants concentration increasing from 0% to 7.51%. The Mn ions incorporated into the TiO₂ lattice reduce the rutile nucleation barrier and promote the nucleation rate.     

Effects of heat treatment and TiO2 content on the optical properties of Eu3+ doped TiO2–SiO2 thin films

The photoluminescence properties of Eu³⁺-doped TiO₂–SiO₂ thin films were investigated. The films were deposited on silicon substrates by the sol–gel process using the dip-coating method. The molar ratio of TiO₂ content was varied from 25% to 100%, while Europium concentration was fixed to 1%. The obtained films were calcinated at various temperatures ranging from 400 °C to 1300 °C, which allowed determining the optimal conditions for the Eu³⁺ luminescence. Meanwhile, the structure of TiO₂–SiO₂ powders, prepared in the same conditions as the films, was also studied by Raman spectroscopy. It revealed the role of Europium and SiO₂ on the stabilization of the anatase phase and the importance of the silica matrix in the control of titania particle size.     

Study of the formation of Co3O4 thin films using sol–gel method

Sol–gel derived coatings containing cobalt have been analyzed using impedance and reflection measurements. It is found that during the thermal treatments in air at temperatures in the range of 35–400 °C, cobalt migrates to the front surface of the coating where it is oxidized by the atmospheric oxygen and forms a top layer rich in nanocrystalline Co₃O₄. In samples heated above 260 °C, the current flows entirely through this top layer because it has higher conductivity than the rest of the coating. For these samples, the impedance spectra show two semicircles, related with the electrical properties of grain and grain boundaries of the cobalt oxide layer. Using the brick model, the grain boundary volume fraction was calculated as a function of the heating temperature.     

Study on the delamination of tungsten thin films on Sb2Te3

To investigate the reliability of electrode materials for chalcogenide random access memory （C-RAM） applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2Te3 bilayer system surface are observed by field emission scanning electronic microscope （FESEM） and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.     

Origin of the noncubic anisotropy in Mn∶ (Y,Gd)3Fe5O12 thin films

Thin Mn YIG films exhibit a large noncubic anisotropy. We show that this anisotropy may be understood on the basis of a strong Jahn-Teller effect of octahedrally coordinated Mn³⁺ ions. The corresponding mechanism is simple — the strain caused by the film/substrate misfit orders the local Jahn-Teller distortions and, as a consequence, noncubic anisotropy appears. In particular, due to the nonparallel local coordinate systems of octahedral sites, an uniaxial anisotropy is predicted also for the (111) growth plane. It is pointed out that the interaction between the Jahn-Teller centres and/or their interaction with the lattice defects lower the magnitude of the anisotropy.The temperature dependence of the uniaxial anisotropy was measured on the (001) and (111) oriented films using the FMR method. The results are in qualitative agreement with the prediction of theory. Quantitative comparison of theory with the experiment is difficult, as little is known about the distribution of the strains due to the lattice defects and about the interaction between the Jahn-Teller centres.The authors are indebted to Dr. S. Krupika for many helpful discussions, to Dr. J. Kub for measuring the misfits and to Dr. J. imová for the analysis of the films used in our experiments.     

Weak ferromagnetism and spin density distributions in thin films of Gd x Bi1 − x FeO3 solid solutions

Polycrystalline thin-film Gd _x Bi_{1 ? x} FeO₃ (x = 0, 0.05, 0.10, 0.15, or 0.20) samples are synthesized by means of thermal vacuum deposition. The concentrations, temperatures, and magnetic field dependences of specific magnetization are studied. Self-consistent calculations of the spin density distribution are performed for R3c BiFeO₃ and Pnma Gd_0.25Bi_0.75FeO₃ using the density functional theory in the LSDA approximation.     

Role of annealing duration on the microstructure and electrochemical performance of β-V2O5 thin films

Vanadium pentoxide thin films have been prepared by sol–gel spin coating method. The eight-layered films coated on fluorine-doped tin oxide substrate and glass substrate were subjected to different durations of annealing under a constant annealing temperature of 300?°C from 30 to 120?min. The X-ray diffraction spectrum reveals crystallinity along (2?0?0) direction. The SEM images of these films show the variation in the surface morphology with increase in annealing duration. The supercapacitor behaviour has been studied using cyclic voltammetry technique and electrochemical impedance spectroscopy. The film annealed for 60?min exhibits a maximum specific capacitance of 346?F/g at a scan rate of 5?mV/s with a charge transfer resistance of 172 Ω.     

Effects of γ rays irradiation on structure and property of TiO2 thin films

TiO₂ thin films were deposited on a glass substrate by the radio frequency magnetron sputtering method, and annealed for 2 h at temperatures of 550°C. Then, ⁶⁰Co γ rays with different doses were used to irradiate the resulting TiO₂ thin films. The surface features of films before and after irradiation were observed by scanning electron microscope (SEM). Simultaneously, the crystal structure and optical properties of films before and after irradiation were studied by X-ray diffraction (XRD), UV–VIS transmission spectrum and Photoluminescence (PL) spectrum, respectively. The SEM analysis shows that the film is smooth with tiny particles on the film surface, and non-crystallization trend was clear after irradiated with γ rays. The XRD results indicated that the structure of the film at the room temperature mainly exists in the form of amorphous and mixed crystal at a sputtering power of 200 W, and non-crystallinity was more obvious after irradiation. Obvious difference can be found for the transmissibility of the irradiated and pre irradiation TiO₂ films by the UV-VIS spectra. The color becomes light yellow, and the new absorption edge also appeared at about 430 nm. PL spectra and photocatalysis experiments indicate that the photocatalysis degradation rate of the TiO₂ films on methylthionine chloride solution irradiated with the maximum dose can be increased to 90%.     

A study of the electrodeposition of Co–Cu alloys thin films on FTO substrate

In this work, the early stages and the properties of the electrodeposition process of Co–Cu alloys thin films on a fluorine-doped tin oxide (FTO)-coated conducting glass substrate from a sulfate bath were investigated using conventional electrochemical techniques and X-ray diffraction technique (XRD). FTO was chosen as a foreign substrate because of its high transparence and its properties as inert material. Within the potential range analyzed, the kinetics of the Co–Cu electrodeposition corresponded to a model including instantaneous nucleation on active sites and diffusion controlled cluster growth. The number of active sites of the substrate, N ₀, and the diffusion coefficient, D, were determined from the analysis of potentiostatic current transients on the basis of existing theoretical models. XRD patterns of the Co–Cu alloys thin films display fcc and hcp phase, with peaks quite close to those of the Co phase (fcc and hcp). Therefore, the variation of the composition of thin films alloy is possible depending on the deposition potential.     

Low-temperature growth of γ phase in thermally deposited In2Se3 thin films

In the present report, we have studied the structural and optical change in the In₂Se₃ thin films prepared by the thermal evaporation method, deposited on a glass substrate and annealed at 250°C. Both the structural and optical studies revealed the formation of γ-In₂Se₃ phase on annealing at such low temperature as 250°C which is not observed before. Raman analysis indicates that the as-prepared film consists of both α and γ-In₂Se₃ phases and the annealed film contains only γ-In₂Se₃ phase. The absorption mechanism in the studied film follows the direct allowed transition. The optical band gap is found to be decreased with annealing due to the increase in the width of localized states near to the band edges. Transmittance is found to be decreased and the absorption is increased with annealing due to the change in the film density which enhances its suitability for solar cell applications.     

Effect of the film thickness on the impedance behavior of sol–gel Ba0.6Sr0.4TiO3 thin films

Perovskite Ba_0.6Sr_0.4TiO₃ sol–gel thin films with different thicknesses are fabricated as MFM configuration to study the effect of the film thickness on the dielectric relaxation phenomenon and the ionic transport mechanism. The frequency dependent impedance, electric modulus, permittivity and AC conductivity have been investigated in this context. Z? plane for all the tested samples shows two regions, corresponding to the bulk mechanism and the distribution of the grain boundaries–electrodes process. Electric modulus versus frequency plots reveal non-Debye relaxation peaks. The observed decrease in both the impedance and permittivity with the increase in film thickness is attributed to the grain size effect. The frequency dependent conductivity plots show three regions of conduction processes, i.e. low-frequency region due to DC conduction, mid-frequency region due to translational hopping motion and high-frequency region due to localized hopping and/or reorientational motion.     

High-resolution identification of ½⟨110⟩ stacking faults in epitaxial Ba0.3Sr0.7TiO3 thin films

The near-interface region of an epitaxial Ba_0.3Sr_0.7TiO₃ thin film grown on LaAlO₃ (001) was found to consist of a high density of ½?110? stacking faults bounded by partial dislocations. The stacking faults can extend over large distances (greater than 50 nm). Various possible atomic configurations of the faults were considered. The atomic structures of the faults were identified using high-resolution electron microscopy and simulation as well as energy-filtered imaging. The ½[101] and faults (where [001] is normal to the film plane) were found to lie predominately on the {100} and {110} planes. The ½lsqb;101] faults on (010), (110) or (1&1tilde;0) have never been observed before in perovskites. The stacking faults on [100] have a structure consisting of a double layer of edge-sharing TiO₆ octahedra. The excess of Ti was detected by energy-filtered imaging. The formation of the extended stacking faults is probably related to a small amount of excess Ti during the film deposition, which may originate from the non-stoichiometry of the ceramic targets BaTiO₃ and SrTiO₃. It is also enhanced by the misfit-induced compressive strain in the early stages of the film growth.     

Raman study of the 90° grain boundaries in YBa2Cu3O7−δ thin films

YBa₂Cu₃O_7−δ (YBCO) films containing two different types of 90° grain boundaries were fabricated on the same substrates. Raman spectra from several parts of the basal-plane-faced tilt (TL) grain boundaries were measured and compared with those from the twist (TW) grain boundaries. The Raman results show that I(500)/I(340), the relative intensity of the A_1g mode near 500 cm⁻¹ with respect to that of the B_1g mode near 340 cm⁻¹, is suppressed in the TL boundaries, relative to the TW boundaries. The results can be interpreted to mean that the stress is stronger in the TL boundaries than in the TW boundaries. This may offer an alternative explanation for the weak-link behavior of the step-edge Josephson junctions.     

Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation

Stoichiometric polycrystalline In₂Se₃ thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this -form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.     

Positive domain wall resistance of 180 degrees Néel walls in Co thin films

We measured the intrinsic domain wall resistance (DWR) of 180 degrees Ne el walls in a polycrystalline Co thin film deposited on top of a patterned antiferromagnetic CoO template. After field cooling through the CoO blocking temperature, exchange bias induces a spatially modulated coercivity of the Co film, resulting in a periodic domain pattern with 180 degrees Ne el walls. The intrinsic DWR is determined unambiguously by using rotating magnetic fields that result in a reversible creation and annihilation of the Ne el walls. In contrast with earlier reports, the DWR is positive and in agreement with models based on the giant magnetoresistance mechanism. A reliable, quantitative determination of the DWR requires careful numerical evaluation of the anisotropic magnetoresistance effect.     

Influence of deposition rate on the properties of ZrO_2 thin films prepared in electron beam evaporation method

ZrO2 thin films were prepared in electron beam thermal evaporation method. And the deposition rate changed from 1.3 to 6.3 nm/s in our study. X-ray diffractometer and spectrophotometer were employed to characterize the films. X-ray diffraction (XRD) spectra pattern shows that films structure changed from amorphous to polycrystalline with deposition rate increasing. The results indicate that internal stresses of the films are compressive in most case. Thin films deposited in our study are inhomogeneous, and the inhomogeneity is enhanced with the deposition rate increasing.     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

Observation of the early stages of growth and the formation of growth spirals in epitaxial YBa2Cu3O7-δ thin films by AFM

Ultrathin epitaxial films of YBa₂Cu₃O_7– on SrTiO₃ prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa₂Cu₃O_7–) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.     

De-vitrification of nanoscale phase-separated amorphous thin films in the immiscible copper–niobium system

Copper and niobium are mutually immiscible in the solid state and exhibit a large positive enthalpy of mixing in the liquid state. Using vapour quenching via magnetron co-sputter deposition, far-from equilibrium amorphous Cu–Nb films have been deposited which exhibit a nanoscale phase separation. Annealing these amorphous films at low temperatures (~200?°C) initiates crystallization via the nucleation and growth of primary nanocrystals of a face-centred cubic Cu-rich phase separated by the amorphous matrix. Interestingly, subsequent annealing at a higher temperature (>300?°C) leads to the polymorphic nucleation and growth of large spherulitic grains of a body-centred cubic Nb-rich phase within the retained amorphous matrix of the partially crystallized film. This sequential two-stage crystallization process has been investigated in detail by combining transmission electron microscopy [TEM] (including high-resolution TEM) and atom probe tomography studies. These results provide new insights into the crystallization behaviour of such unusual far-from equilibrium phase-separated metallic glasses in immiscible systems.