半导体量子器件物理讲座第七讲半导体异质结光电探测器

光电探测器是一类用于接收光波并转变为电信号的专门器件，文章描述了PIN光电二极`管雪崩光电二极管、MSM（金属－半导体－金属）光电二极管的器件结构和工作原理，并对它们的响应度、噪声、带宽等特性进行了讨论，这类器件已在光通信、光信息处理等许多系统中得到广泛的应用。     

Two-dimensional optoelectronic devices for future optical switching and information processing

Recent progress is reviewed in surface-normal optoelectronic devices primarily for use in optical switching and information processing. A type of optoelectronic integrated circuit (OEIC), the surface-normal two-dimensional array, is fabricated using these devices. This improves on first-generation OEICs by featuring large-scale integration in a small area, which results in a higher production yield. It also has structures which can easily be integrated with electronic circuits and can meet multichannel requirements. This approach supports optoelectronic progress towards optical information processing.     

关于ZnSe—ZnS应变超晶格P型导电机理的探讨

本文利用变温Hall测量,证实了我们用MOCVD法生长的No.87—39A ZnSe-ZnS应变超品格(SLS)具有P型导电特性。文中试图从应变超晶格的临界厚度,电学参数、能带结构等方面解释ZnSe-ZnS SLS反型的原因。文中指出,这时的受主能级可能处于ZnS层靠近界面附近,这些受主能级的位置比ZnSc阱中满带顶能量低。     

Multiple air-gap filters and constricted mesa lasers – material processing meets the front of optical device technology

Real three-dimensional material structures enable enormous perspectives in the functionality of advanced electronic and optoelectronic III/V semiconductor devices. We report on the technological implementation of surface-micromachined III/V semiconductor devices for optoelectronic applications. Considering fabrication technology, the general principles can be reduced to three fundamental process steps: deposition of a layered heterostructure on a substrate, vertical structurization and horizontal undercutting by selectively removing sacrificial layers. Very useful quality-control elements for precise process control are presented. The basic principles are applied and illustrated in detail by presenting two selected optoelectronic examples. (i) The fabrication technology of buried mushroom stripe lasers is shown. Bent waveguides on homogeneous grating fields are used to obtain chirped gratings, enabling a high potential to tailor specific performances. Excellent optical properties are obtained. (ii) The fabrication technology of vertical optical cavity based tunable single- or multi-membrane devices including air gaps is shown. Record optical tuning characteristics for vertical cavity Fabry–Pérot filters are presented. Single parametric wavelength tuning over 142 nm with an actuation voltage of only 3.2 V is demonstrated. PACS 85.60.-q; 87.80.Mj; 68.65.Ac     

Low crosstalk monolithic wavelength demultiplexing switch arrays

Wavelength Division Multiplexing (WDM) is a key enabling technology for increasing the transmission capacity of optical fiber communication systems. Recently, a new family of optoelectronic devices, including detectors, switches, and emitters, that is based on resonant cavity enhancement, has emerged. Wavelength selective optoelectronic switching is achieved by placing a photothyristor in an asymmetric Fabry-Perot cavity, which provides a highly selective response at a wavelength determined during device fabrication. These WDM optoelectronic devices haue promising applications in optical COmmunications and optical logic circuits. Results on a N-p-n-p optoelectronic switch with a ten wavelength channel capability are presented.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Femtosecond semiconductor-based optoelectronic devices for optical-communication systems

Compact semiconductor-based ultrafast optoelectronic devices are crucial for networks with a throughput in the 1–10 Tb/s range. A variety of ultrafast phenomena in semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical-communication systems and necessary optoelectronic devices. Recent progress of ultrafast semiconductor-based optoelectronic devices are described with a focus on all-optical switching devices, including novel devices using electron spin polarization relaxation and intersubband transition both in multiple quantum well structures.     

DNA-类脂复合物光电薄膜材料及其应用

回顾了近年来DNA-类脂复合物光电薄膜材料及其相关应用研究的进展,介绍了DNA的提取与DNA-类脂复合物薄膜的制备方法,DNA-类脂复合物的光学特性,以及DNA-类脂复合物在光电子器件中的应用,并指出了DNA-类脂复合物光电薄膜材料在光学和光电子器件中的应用前景。     

Znse—ZnS应变超晶格的吸收光谱及子能带的计算

我们首次观测到ZnSe—ZnS应变超晶格的n=1,n=2两个子能带的重、轻空穴激子的吸收光谱。根据LCAO理论、应变感应能带结构理论与Kronig-Penney模型,首次计算了ZnSe—ZnS应变超晶格势阱中重、轻空穴子能带。计算结果由实验所测量的吸收光谱所验证。文中指出,这一计算方法同样适用于其它半导体超晶格。     

Periodic surface nanostructures on polycrystalline ZnO induced by femtosecond laser pulses

Periodic surface nanostructures induced by femtosecond laser pulses on polycrystalline ZnO are presented. By translating the sample line-by-line under appropriate irradiation conditions, grating-like nanostructures with an average period of 160 nm are fabricated. The dependence of surface morphologies on the processing parameters, such as laser fluence, pulse number and laser polarization, are studied by scanning electronic microscope (SEM). In addition, photoluminescence (PL) analysis at room-temperature indicates that the PL intensity of the irradiated area increases significantly compared with the un-irradiated area. Using femtosecond laser pulses irradiation to fabricate periodic surface nanostructures on polycrystalline ZnO is efficient, simple and low cost, which shows great potential applications in ZnO-based optoelectronic devices.     

全固态光电子取样系统

本文介绍了一种全固态高速光电子取样系统。整个系统全部由固态器件组成。该系统以超短脉冲激光二极管作光源,以混合集成光电回路作取样门。从理论上分析了这种系统的灵敏度和分辨率。给出了初步的实验结果。     

Electron and hole effective masses for two-dimensional transport in strained-layer superlattices

The first theoretical study of the electron and hole effective masses along the layers of (100) strained-layer superlattices grown from direct and indirect gap materials is presented. The results indicate that the large layer strains in these structures can produce electron masses associated with the X valleys and hole masses which are significantly reduced from bulk values. The electron values are typically ～ 0.2 m_e and the hole values are typically <0.1 m_e. These results have important implications for the low field transport properties of strained-layer systems.     

Advance of optoelectronic devices for long wavelength optical fiber communication in china

The advance of optoelectronic devices for long wavelength optical fiber communication in China is reviewed. The main features of the long wavelength semiconductor lasers and photodetectors are presented.     

现代雷达中的光电子技术

介绍了光电子技术在现代雷达中的主要应用,在雷达信号传输,光信息处理和微波器件的光控制等方面,光电子技术的应用显示出广阔的前景和巨大的经济,军事价值。     

Advance of optoelectronic devices for long wavelength optical fiber communication in china

The advance of optoelectronic devices for long wavelength optical fiber communication in China is reviewed. The main features of the long wavelength semiconductor lasers and photodetectors are presented.     

a-SiOx : H thin film light emitting devices for Si-based optoelectronics

Electrical and optoelectronic characterization of p–i–n devices based on a-SiO_x : H thin film alloys is presented. It is shown that near infrared electroluminescence can be obtained for applied fields higher than a typical threshold depending on the p/i and n/i interface structure. Electroluminescence (EL) intensity under AC excitation is independent of frequency up to 20 kHz and exhibits rise and decay times of about 10 μs. Optical properties of a-SiO_x : H materials allow the integration of LED devices and optical waveguides, which can be coupled to planar silicon detectors for obtaining Si-based optoelectronic circuits.     

Optoelectronic memristor for neuromorphic computing

With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store information,which would reduce the power consumption while improve the efficiency of computing.Therefore,the development of brainlike intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence.Memristor,as the fourth fundamental circuit element,is an ideal synaptic simulator due to its integration of storage and processing characteristics,and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains.In particular,memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth,ultrafast data operation speed,low power consumption,and low cross-talk,which is important for building efficient brain-like computing networks.Herein,we review recent progresses in optoelectronic memristor for neuromorphic computing,including the optoelectronic memristive materials,working principles,applications,as well as the current challenges and the future development of the optoelectronic memristor.     

半导体物理效应与光电子高技术产业

阐述了能带理论和晶格动力学的创建对半导体科学技术发展发展的历史意义，重点介绍了若干关键半导体物理效应的内涵及其对光电子器件与技术发展所作出的源头性贡献，描绘了以半导体激光器为代表的现代光电子高科技产业的发展现状与趋势，指出了光电子高科技持续发展的主要方向。     

Microwave optoelectronics

The low-loss, wide-bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals. This paper considers the technology required for generating, transmitting and detecting microwave modulated optical signals. It also reviews the developing research area of directly optically controlled microwave devices, and describes some typical microwave optoelectronic systems applications.     

光通信中的光电子器件讲座：第一讲 光电子器件在光纤通信中的应用与发展

文章介绍了光纤、激光器及光放大器等光电子器件在光纤通信的产生、发展中的关键作用,分析了现代光纤通信系统中的各种有源、无源光电子器件、并论述了21世纪全光网发展所需的几种典型的光电子或光子器件。