Application of photothermal deflection spectroscopy for the determination of iron(II) with ferrozine with sorption preconcentration on Silufol

Photothermal deflection spectroscopy was applied for selective detection of the intensely coloured iron(II) chelate with ferrozine on Silufol plates. The linearity range was 1×10^-11 - 6×10^-8 mol cm^-2 of chelate at the plate surface, which corresponded to 1×10^-9 - 4×10^-6 M of chelate in solution. The limits of detection and quantification are 8×10^-12 and 20×10^-12 mol cm^-2 at the plate from 15 μL of test solution (0.5 nM and 1.5 nM in solution, respectively), which corresponded to n ×10^-18 mol absolute amounts of the chelate at the detection zone.     

Synthesis and Characterization of New Light Emitter Symmetrical Phenoxazinium Salt and Its Potential Application as Sensor for Assessment of Hg2+

The sensitization of the excited triplet state of a novel symmetrical Bis(dialkylamino)phenoxazinium salt was developed in the presence of Hg²⁺. This effect was used to determine the concentration of Hg²⁺ in different water samples. The phenoxazinium salt sensor was characterized by different spectroscopic tools such as: UV, FTIR, NMR and fluorescence spectra. The sensor has an emission band at 347 nm in DMSO. Hg²⁺ in DMSO at pH 5.6 can remarkably quench the fluorescence intensity of the sensor at 347 nm and a new band was appeared at 436 nm due to the strong complex formation between Hg²⁺ and sensor. The quenching of the band intensity at 347 and the enhancement of the intensity of the new band at 436 were used to determine the Hg²⁺ in different waste water samples. The dynamic range found for the determination of Hg²⁺ concentration is 8.7?×?10^-10 – 1.4?×?10^-6 mol L^?1 with a detection limit of 5.8?×?10^?10 mol L^?1 and quantification detection limit of 1.8?×?10^-9 mol L^-1.     

Ionic transport in the lithium nitride bromides,Li6NBr3 and Li1 3N4Br

The ionic and electronic conductivities of the lithium nitride bromides Li₆NBr₃ and Li_{1 3}N₄Br have been studied in the temperature range from 50 to 220°C and 120 to 450°C, respectively. Both compounds are practically pure lithium ion conductors with negligible electronic contribution. Li₆NBr₃ has an ionic conductivity Ω of 2 × 10^-6Ω^-1cm^-1 at 100°C and an activation enthalpy for σT of 0.46 eV. Li_{1 3}N₄Br shows a phase transition at about 230°C. The activation enthalpy for σT is 0.73 eV below and 0.47 eV above this temperature. The conductivities at 150 and 300°C were found to be 3.5 × 10^-6 Ω^-1cm^-1 and 1.4 × 10^-3Ω^-1cm^-1, respectively. The crystal structure is hexagonal at room temperature with $\text{a = 7.415 (1)}\text{A}\text{?}$ and $\text{c = 3.865 (1)}\text{A}\text{?}$.     

Measurement of Ar(I) and Ar(II) transition probabilities in LTE ARC plasmas

The transition probabilities of two Ar(I) lines and one Ar(II) line have been measured in emission on wall-stabilized argon arc plasmas (0·5×10⁵?p, Nm^-2?3×10⁵; 10,000?T, K?20,000; 10²²?N_e, m^-3?5×10²³) using the “method of best fit (MBF)”. The results (without line-wing correction) are for Ar(I) at 714·7 nm, A_nm=5·66×10⁵ s^-1±5%; for Ar(I) at 430·0 nm, A_nm=3·40×10⁵ s^-1±5%; for Ar(II) at 480·6 nm, A_nm=8·82×10⁷ s^-1±7%. These values were not influenced by deviations from LTE, which have been observed at electron number densities n_e?10²³ m^-3. The small uncertainties were achieved after careful corrections of different sources of error.     

锗、硅、锑化铟和砷化镓的热膨涨——用X射线衍射法测量

本工作是用X射线衍射法测量锗、硅和合金InSb及GaAs在不同温度的点阵常数,观察它们的热膨涨,并求得它们的膨涨系数。     

Measurements of intensities and nitrogen-broadened linewidths in the CO fundamental at low temperatures

Intensities and nitrogen-broadened half-widths of lines R(0), R(8) and R(16) in the fundamental band of ¹²C¹⁶O have been measured at 83°K, 100°K, 150°K, 200°K and 298°K. The intensities of several other lines in the P- and R-branches of the band have also been measured at 298°K. The absolute intensity derived from the line intensity data using the Herman-Wallis formula is S^°_v = 273 ± 10 cm^-2atm^-1 at S.T.P. A separate measurement employing the Wilson-Wells-Penner-Weber method has yielded S^°_v = 277 ± 4 cm^-2 atm^-1 at S.T.P. Both of these values are within 6 per cent of most of the previously published direct measurements of this parameter. The values for the line intensities reported earlier by other authors are lower by nearly 16 per cent.     

Intensity measurements in the v4-fundamental of methane

The absolute intensities of all the J-multiplets between R(13) at 1375cm^-1 and P(12) at 1225 cm^-1, in the v₄-fundamental of ¹²CH₄, have been measured at 300°K. Our values are consistent with published band-intensity measurements and also with the theoretical line strength tabulation by Fox. Spectral transmittance computation using a Lorentz line shape with a hydrogen-broadened half-width of 0.075 cm^-1 atm^-1 at 300°K for all the lines in the band is in excellent agreement with our experimental data measured with a spectral resolution of 0.2 cm^-1. Our best estimate for the absolute intensity of the band is 145±8 cm^-2 atm^-1 at STP.     

Three-photon ionization cross-section of potassium for single-mode ruby laser radiation

The three-photon ionization cross-section for K at 6943 Å has been determined to be (8.0 ± 1.8) × 10^-91 m⁶s² photon^-3 for circularly polarized and (3.4 ± 0.8) × 10^-91 m⁶s² photon^-3 for linearly polarized radiation. The ratio of these quantities (2.34 ± 0.22) has been found to agree substantially with recent theoretical predictions.     

Line intensities of CO2 in the 2·7 micron region

Individual line intensities have been measured at 0·025 cm^?1 resolution and low pressures for the two strong Σ-Σ bands of C¹²O₂¹⁶ near 2.7 microns, as well as for their associated Π-Π hot-bands. Values of the rotationless dipole-moment matrix elements and vibration-rotation interaction coefficients are reported along with total band intensities. Results for the latter in cm^?2 atm^?1 at 296°K are: 25·7, 1·96, 39·3 and 3·23 for the 02⁰1-00⁰0, 03¹1-01¹0, 10⁰1-00⁰0, and 11¹1-01¹0 bands, respectively.     

V:YAG – a new passive Q-switch for diode-pumped solid-state lasers

gsa =3.0×10^-18 cm² and σ_esa=1.4×10^-19 cm² at 1064 nm, and σ_gsa=7.2×10^-18 cm² and σ_esa=7.4×10^-19 cm² at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO₄ microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W. Received: 17 March 1998/Revised version: 8 June 1998     

Self-luminescence of several fluorite-structure halides doped with curium or berkelium

The self-luminescence emission spectra of several fluorite-structure halides doped with 0.1 cation % ²⁴⁴Cm or ²⁴⁹Bk were measured in the range 14 × 10⁵ to 50 × 10⁵ m^-1 (200–700 nm) between 295 and 600 K. The hosts studied included CaF₂, SrF₂, BaF₂, and SrCl₂ (for Cm) and BaF₂ and SrCl₂ (for Bk). The room-temperature spectra of the Cm-doped samples all have relatively sharp peaks at approximately 16.5 × 10⁵ m^-1 and broad, asymmetric bands with maxima near 35 × 10⁵ m^-1 (fluorides) or 28 × 10⁵ m^-1 (SrCl₂). The sharp peaks are attributed to the Cm dopant and are stable to at least 600 K, while the broad bands appear to be associated with host anion centers and disappear on sample heating. The room-temperature spectrum of Bk-doped BaF₂ also displays an anion- related band at 35 × 10⁵ m^-1, while that of Bk-doped SrCl₂ has both an anion band at 28 × 10⁵ m^-1 and a peak at 19 × 10⁵ m^-1 (believed to be an additional host effect). The luminescence intensity of all samples decreased with room-temperature storage, but could be partially restored by annealing.     

Anisotropy of nonlinear absorption in Co<Superscript>2+</Superscript>:MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystal

Anisotropy of the nonlinear absorption of Co²⁺ ions in MgAl₂O₄ single crystal at the wavelengths of 1.35 and 1.54 μm has been experimentally demonstrated. The experimental data are analyzed in the framework of a phenomenological model when the Co²⁺ ions are described as three sets of linear dipoles oriented along the crystallographic axes. Ground-state and excited state absorption cross-sections at 1.35 and 1.54 μm are evaluated to be σ_gsa=(4.0±0.3)×10^-19, σ_esa=(3.6±0.4)×10^-20 cm² and σ_gsa=(5.1±0.3)×10^-19, σ_esa=(4.6±0.4)×10^-20 cm², respectively. PACS 42.55.Rz; 71.20.Be     

Temperature-dependent light scattering from magnetic excitons in TlCoF3

Raman spectra of antiferromagnetic thallium cobaltous fluoride have been obtained with 4579A argon ion laser excitation at temperatures from 4°K to T_N = 94 ± 2°K. The features observed consist of six Co²⁺ excitons ranging in energy from 325 to 1070 cm^-1, at two-magnon peak with low-temperature energy of 315 cm^-1, and a one-magnon feature whose 4°K energy is 37 cm^-1. The energy and linewidth of the one-magnon scattering has been measured from 4°K to about 0.8 T_N; it is found that the magnon becomes critically damped at about 0.8 T_N, in good agreement with our previous observations on RbCoF₃. The Co²⁺ excitons observed at 325, 380, 410, 730 (weak), 960, and 1070 cm^-1 agree in energy quite well with the KCoF₃ levels calculated by Buyers, Holden et al. as 340, 400, 467, 767, 967 and 1050 cm^-1.     

Measurement at different temperatures of absolute intensities,line half-widths,and broadening by Ar and N2 for the 3001II←0000 band of CO2

Absolute intensities, self-broadening coefficients, and foreign-gas broadening by Ar and N₂ were measured at temperatures of 197, 233 and 294 K for the 30⁰1_II←00⁰0 band of CO₂ at 6348 cm^-1. Also, the intensity parameters and total band intensity were calculated. We obtained for the vibration-rotation interaction factor the value F(m) = 1 + (0.26 ± 0.06) × 10^-2m + (0.92 ±0.32 × 10^-4 m²; for the purely vibrational transition moment, we found ¦R₀₀₀₀^3001_II¦к(0.4351 ± 0.0014)()10^b3 debye; and, for the total band intensity at STP conditions, S_band(30⁰1_II←00⁰0)_STP = 1255 ± 9 cm^-1 km^-1 atm^-1.Self-broadening coefficients at 197 and 294 K were also measured, as well as broadening by Ar and N₂. Foreign-gas-broadening efficiencies (Ar and N₂) were determined. Finally, a comparison is made with measurements by other authors and with theoretically calculated values.     

The kinetics of the sensitized flourescence of naphthalene single crystals doped with 2-methylnaphthalene and anthracene

The kinetics of the sensitized flourescence in naphthalene crystals doped with 2-methylnaphthalene (2-MN) and anthracene (A) was studied as a function of the temperature. These experiments yield singlet exciton diffusion constants of (2 ± 1) × 10^-4cm²s^-1 at 4.2 K and roughly 10^-5 cm² s^-1 at 300 K. The exciton trapping radii can be estimated to be of the order of 60 Å for A and 10 Å for 2-MN. At temperatures below 40 K a partially coherent exciton motion can be inferred, above 40 K the exciton motion appears to be purely incoherent.     

Quenching kinetics and small signal gain spectrum of the ZnI photodissociation laser

By photodissociation ZnI₂ with 193 nm (ArF) laser radiation, the rate constants for quenching of the upper and lower energy levels of the ZnI (B → X) laser by ZnI₂ have been measured to be (1.7 ± 0.2) × 10^-9 and (1.4 ± 0.4) × 10^-9 cm³ s^-1, respectively. Although the former rate constant was found to be laser intensity-dependent for I ? 10⁵ W cm^-2, the ZnI(B) state radiative lifetime was determined to be 26 ± 4 ns. Also, the small signal gain coefficient, g₀, of this molecular laser has a peak value of ? 15% cm^-1 at λ ? 602 nm and exceeds 5% cm^-1 for 591 nm ≤ λ ≤ 608 nm for a potential tuning range of at least 170 Å.     

Thermal expansion measurements for estimating vacancy concentration in X-ray irradiated KCl single crystals

A sensitive capacitance technique is used for measuring changes in length (Δl) of KCl single crystals with temperature in the region 30–300°C. These measurements have been taken on KCl in (i) as-cleaved (ii) X-ray irradiated (iii) quenched and X-ray irradiated conditions (X-ray irradiation was always done at room temperature (≈ 30°C). The linear coefficient of thermal expansion (α) of the as-cleaved sample is 40.8 × 10^-6°C^-1. Variation of Δl with temperature in X-ray irradiated crystal shows two regions: (a) 30–180°C where α is 48.1 × 10^-6°C^-1, (b) 180–300°C where α is 40.4 × 10^-6°C^-1. Similar behaviour is exhibited by quenched and later X-ray irradiated KCl the first region is up to 140°C, beyond which the second region takes over. From these data, concentration of vacancies in X-ray irradiated KCl at room temperature is calculated to be 3.4 × 10¹⁷ cm^-3 which is in fairly good agreement with the value obtained from F-band absorption measurements on the sample. An attempt has been made to understand these results.     

Absolute intensities and pressure broadening coefficients measured at different temperatures for the 201II ← 000 band of 12C16O2 at 4978cm-1

Absolute line intensities and self-broadening coefficients have been measured at 197° and 294°K for the 201_II ← 000 band of ¹²C¹⁶O₂ at about 4978cm^-1. The vibration-rotation factor (F_VR), the purely vibrational transition moment (∣R(O)∣), and the integrated band intensity (S_band) are deduced from the measurements. The results are: F_VR(m)=1+(0.24±0.08)x10^-4m+(0.55+0.21)x10^-4m², ∣R(O)∣= (4.340±0.008x10^-3 debye, S_band=96372±190cm^-1km^-1atm^-1_STP. The results for self-broadening coefficients, as well as for individual vibration-rotation lines, are presented in the text.     

Transport of excess charge carriers in liquid and solid hydrogen

The temperature dependence of the drift mobility of excess charge carriers in liquid and solid hydrogen has been investigated. Both negative and positive carriers are observed in the liquid with mobilities ～ 5 × 10^-3 cm² V^-1 sec^-1 at 15 K; the mobile carriers in the solid are believed to be negatively Charged with a mobility ～ 6 × 10^-6 cm² V^-1 sec^-1 at 13 K. The mechanisms of charge localization and transport are discussed.     

磷离子注入速率对4H-SiC(0001)晶格恢复与电阻率降低的影响

高剂量的磷离子注入4H-SiC(0001)晶面，注入速率从1.0×1012到4.0×1012 P+ cm-2s-1变化，而注入剂量固定为2.0×1015 P+ cm-2。室温注入，1500oC的高温下退火。利用光荧光和拉曼谱分析注入产生的晶格损伤以及退火后的残余缺陷。通过霍耳测试来分析注入层的电学性质。基于上述测试结果，发现通过减小磷离子的注入速率，极大地减少了注入层的损伤及缺陷。考虑到室温注入以及相对较低的退火温度(1500 oC)，在注入速率为1.0×1012 P+ cm-2s-1及施主浓度下为4.4×1019 cm-3的条件下，获得了非常低的方块电阻106 Ω/sq。