用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心

采用MOS方法,在液相外延生长的n型In_0.75Ga_0.25As_0.58P_0.42混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10^-16cm²和3.8×10^-12cm²。关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。 关键词：     

Dipolar studies in CaF2 with Ce3+

Dielectric relaxation in CaF₂ doped with various amounts of Ce³⁺ (0·01 to 1·0 mol%) was measured. The value of the activation energy for orientation of the dipoles {Ce³⁺-F^? interstitial} was determined to be H = (0·46 ± 0·01) eV. The frequency factor was found to have the value τ_o = (5 ± 1) × 10^?15 sec, giving for the vibrational frequency of the interstitial the value ν_o = (5 ± 1) × 10¹³ sec^?1.The number of dipoles contributing to the dielectric loss peak was determined to be between 10¹⁷ and 8 × 10¹⁷ cm^?3 for the different doping amounts of Ce³⁺. Optical absorption measurements showed the existence of large aggregate bands. We could verify that there exists a second-order reaction of aggregation, which is responsible for the non-linearity found between optical absorption at 305 nm and the nominal concentration of Ce³⁺ in the samples. On the other hand, if we assume that the centers which contribute to optical absorption at 305 nm are those also responsible for the relaxation peak, we find that the number contributing to each process is not the same. We can define an interaction radius R as the minimum separation between two dipoles allowing them to contribute to the relaxation peak. From our experimental data R ? 3·8 × 10^?7 cm.     

Luminescence properties of Y3Al5O12:Ce nanoceramics

Comparative analysis of the luminescent properties of Y₃Al₅O₁₂:Ce (YAG:Ce) transparent optical ceramics (OС) with those of single crystal (SC) and single crystalline film (SCF) analogues has been performed under excitation by pulsed synchrotron radiation in the fundamental absorption range of YAG host. It has been shown that the properties of YAG:Ce OC are closer to the properties of the SCF counterpart, where Y_Al antisite defects are completely absent, rather than to the properties of SC of this garnet with large concentration of Y_Al antisite defects. At the same time, the luminescence spectra of YAG:Ce OC show weak emission bands in the 200-470 nm range related to Y_Al antisite defects and charged oxygen vacancies (F⁺ and F centers). YAG:Ce ОС also possesses significantly larger contribution of slow components in the Ce³⁺ luminescence decay under high-energy excitation in comparison with SC and SCF of this garnet due to the involvement of antisite defects, charged oxygen vacancies as well as boundaries of grains in the energy transfer processes from the host to the Ce³⁺ ions.     

Electrical conduction and 1ƒ noise in Li-DOPED MnO

Electrical resistivity, thermoelectric power and current noise were measured on Li-doped MnO single crystals in the temperature range from 300 to 1000 K. Below 700 K the crystals are p-type and the activation energy of the resistivity is 0.75 eV. Around 700 K the activation energy changes from 0.75 to 1.25 eV owing to a change from p- to n-type conduction. The depth of the Li acceptor is found to be 0.65 eV. From resistivity and thermoelectric power data it is concluded that the bandgap in first approximation can be written as E_s(T) = E_o ? γT between 750 and 1000 K, with E_o = 1.9 eV and γ = 6 × 10^?4 eV/K. The current noise spectra show $\text{1}\text{?}$ noise. The magnitude of the $\text{1}\text{?}$ noise is strongly temperature dependent. From the noise data it is deduced that E_o = 2.2 eV and γ = 10^?3 eV/K in the temperature range 430–700 K.     

Polarization spectroscopy of the E0g+-B0u+ band system of Br2

The E-B (0_g⁺-0_u⁺) band system of Br₂ has been investigated at Doppler-limited resolution using polarization labeling spectroscopy. Merged E state data for the three naturally occurring isotopes in the range v_E = 0–16, expressed in terms of the constants for ⁷⁹Br₂, are (in cm^?1) Y_0,0 = 49 777.962(54), Y_1,0 = 150.834(22), Y_2,0 = ?0.4182(28), Y_3,0 = 6.6(11) × 10^?4, Y_0,1 = 4.1876(28) × 10^?2, Y_1,1 = ?1.607(16) × 10^?4, and Y_0,2 = 1.39(39) × 10^?8. The bond distance is $\text{r}{}_{\mathrm{<mtext>e</mtext>}}\text{= 3.194}\text{A}\text{?}$, and the diabatic dissociation energy to $\text{Br}{}^{\mathrm{+}}\text{(}{}^3\text{P}{}_2\text{) +}\text{Br}{}^{\mathrm{?}}\text{(}{}^1\text{S}{}_0\text{)}\text{is 34 700 cm}{}^{\mathrm{?1}}$.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

Radio-frequency (RF) studies of the magneto-dielectric composites: Cr0.75Fe1.25O3 (CRFO)-Fe0.5Cu0.75Ti0.75O3 (FCTO)

This paper concerns a study about the electrical properties of Cr_0.75Fe_1.25O₃ (CRFO)/Fe_0.5Cu_0.75Ti_0.75O₃ (FCTO) magneto-dielectric composites. These compounds were prepared by the conventional solid-state reaction synthesis. The samples synthesized, as well their two-phase composites [Cr_0.75Fe_1.25O₃]_Z-[Fe_0.5Cu_0.75Ti_0.75O₃]_100−Z (Z=17, 34, 50, 66, 83), were characterized by X-ray powder diffraction technique (XRD). Rietveld's method was employed to verify the quantitative phase abundances in the composites’ and their theoretical densities, which were compared with the experimental densities (pycnometer method).To predict the effect of the phases in the composites effective dielectric function (κ), traditional dielectric mixing models such as parallel, series, and Lichtenecker's model were observed. An alternative approach, a sigmoidal fitting function based on the Boltzmann equation, was proposed to fit the experimental data.     

Nuclear magnetic resonance of intermetallic compounds Gd2Ni17−xAlx

²⁷Al Knight shifts vs temperature and magnetic susceptibility for the intermetallic compounds Gd₂Ni_17?xAl_x (x = 17; 16.2; 16; 15) are presented. The results are discussed in terms of the uniform polarization model fo the conduction electrons by the 4f and 3d spins localized on the Gd and Ni ions. The phenomenological exchange constants J_sf and J_sd range between ?1.80×10^?3 and 1.19×10^?3 eV and ?0.63×10^?3 and ?0.52×10^?3 eV, respectively.     

Dark-current relaxation in EuGa2S4 single crystals

The results of the investigation of dark-current relaxation in EuGa₂S₄ single crystals are reported. The depth and concentration of the traps are found to be E_t = 0.79 eV and N_t = 1.64 × 10¹⁴ cm^?3, respectively.The charge accumulation region (d_c = 3.3 × 10^?5 cm) and contact capacitance (C_c = 1.23 × 10^?10 F) are also estimated.     

Proton-induced F-centers in LiF and MgF2

The growth of F-centers in LiF irradiated at room temperature with 40- and 85-MeV protons and with ⁹⁰Sr electrons was found to be proportional to the square root of the absorbed energy over the range 0.5 to 2.3 Mrad which corresponds to an F-center density range of 1 × 10¹⁶ to 1.5 × 10¹⁷ per cm³. The production efficiency was 5 × 10³eV per F-center at an absorbed energy of 2.3 Mrad. The density of F-centers produced in MgF₂ by 40- and 85-MeV protons was measured over an absorbed energy range of 0.2 to 29 Mrad which corresponds to a maximum F-center density of 2 × 10¹⁶ per cm³. The production efficiency for MgF₂ was 4 × 10⁵eV per F-center at an absorbed energy of 16 Mrad.     

Magnetic annealing and crystallization kinetics of the metallic glass Fe5Co70Si15B10

Magnetic annealing and crystallization kinetics of amorphous ribbons of Fe₅Co₇₀Si₁₅B₁₀ were studied. For a toroid stress-relieved at 365°C for 2 h, the anistropy energy K_u obtained by cooling in a magnetic field from 300°C was ≈1.1 × 10³erg/cm³ at room temperature. The reorientation of induced anisotropy of this toroid followed the equation for first-order kinetics closely, yielding an activation energy ΔE = 1.9 eV and a pre-exponential frequency factor v₀ = 3.2 × 10¹³s^-1. Anisotropy reorientation in a toroid partially stress-relieved at 220°C, although was clearly reversible during 8 cycles of isothermal annealing in tranverse and in longitudinal field, exhibited significant deviations from the equation for first order kinetics. Treating the data in terms of the equation for first order kinetics, a narrow spectrum of activation energy from 1.2 to 1.8 eV, with corresponding frequency factors from 1.8 × 10⁸ s^-1 to 5.6 × 10¹² s^-1, was obtained. The difference in behavior between the two samples is discussed in the light of concepts in structural relaxation recently proposed by T. Egami. Crystallization kinetics was studied on a DSC apparatus, using Kissinger's method. At 10 K/min heating rate, the temperature of incipient crystallization was found to be 770 K. The activation energies found were in the range 4.8–4.2 eV.     

Spectral properties of Ce3+ doped yttrium lanthanum oxide transparent ceramics

Ce3+-doped yttrium lanthanum oxide (Y0.9La0.1)2O3 transparent ceramics is fabricated with nanopowders and sintered in H2 atmosphere. The spectral properties of Ce:(Y0.9La0.1)2O3 transparent ceramics are investigated. There appear two characteristic absorption peaks of Ce3+ ions at 230 nm and 400 nm, separately. It is found that Ce3+ ions can efficiently produce emission at 384 nm from (Y0.9La0.1)2O3 transparent ceramic host, while the emission is completely quenched in Re2O3 (Re=Y, Lu, La) host materials.     

A spectroscopic study of the D(0u+) ion-pair state of Br2 by the optical-optical double-resonance technique

An optical-optical double-resonance technique has been applied to study the D(0_u⁺) ion-pair state of Br₂ in a one-photon resonant three-photon absorption. The OODR transition proceeds through the high vibrational level of the B³Π(0_u⁺) state, which compromises a large Franck-Condon shift required for the excitation of Br₂ from the X¹Σ_g⁺ state to the D(0_u⁺) state. Dunham parameters of the D(0_u⁺) state, based on a global least-squares fit of 407 transitions (v′ = 0–16, J′ = 17–115), are Y₀₀ = 49928.443(41), Y₁₀ = 134.467(19), Y₂₀ = ?8.71(27) × 10^?2, Y₃₀ = ?3.36(10) × 10^?3, Y₀₁ = 4.2382(15) × 10^?2, Y₁₁ = ?1.061(36) × 10^?4, Y₂₁ = ?2.00(27) × 10^?6, and Y₀₂ = ?1.93(11) × 10^?8 for ⁷⁹Br₂ (all in cm^?1, and 3σ in parentheses). The single rovibronic fluorescence spectrum of the D(0_u⁺) state shows a transition terminating on the X¹Σ_g⁺ ground state, and establishes the absolute v′ numbering on the basis of the Franck-Condon factor calculations. The v′ = 2 and 3 levels of the D(0_u⁺) state are strongly perturbed due to the heterogeneous interaction with the 1_u state correlating with the same ionic products of the D(0_u⁺) state at the dissociation limit, $\text{Br}{}^{\mathrm{?}}\text{(}{}^1\text{S) +}\text{Br}{}^{\mathrm{+}}\text{(}{}^3\text{P}{}_2\text{)}$.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Yields of H+ and He+ at the energy for elastic scattering from H2+3He+ incident on Ag and Pd

Yields, Y, of H⁺ and He⁺ emerging specularly with the energy for single binary elastic collisions have been measured from polycrystalline Ag and Pd surfaces bombarded with mixed monoenergetic (300 < E₀ < 2600 eV) beams of H₂⁺³He⁺ impinging at an angle of 45° from the surface normal. The surfaces were exposed to H₂⁺ at a dynamic pressure of 8 × 10^?3 Pa (6 × 10^?5 Torr) during the measurements. The He⁺ yields from Pd are slightly larger than from Ag, and the H⁺ yields from Pd are 10 to 40 times as large as those from Ag. These results suggest that differences between Pd and Ag in the amount of hydrogen adsorbed and in the character of the hydrogen-metal bond may be responsible for the yield differences through shadowing by, and possibly the sputtering of, adsorbed hydrogen. The Y versus E₀ curves for all four systems have qualitatively the same singly peaked shape which implies that reactive and noble gas ions undergo similar neutralization processes during elastic surface collisions. The ratios of the yields from Ag and Pd do not exhibit the theoretically expected exponential dependence on collision time over the entire range studied, but at the lowest energies the ratios lead to estimates of the difference of neutralization constants which do agree with theory. The potential utility of the large difference in proton yields from Ag and Pd for studying the Ag-Pd alloy system is noted.     

Ferroelectric and optical properties of Ba6Ti2Nb8O30 single crystals

The dielectric, optical and non-linear optical properties of Ba₆Ti₂Nb₈O₃₀ single crystals were examined from room temperature up to the Curie temperature of 245°C. The spontaneous polarization at room temperature was estimated as 0·22±0·01 C/m². The linear electrooptic constants were measured as r₃₃^T=(1·17±0·02)×10^?10 and r₁₃^T=(0·42±0·01)×10^?10 m/V. The non-linear optical coefficients were d₃₃=(15·1±2·0)×10^?12 and d₃₁=(11·0±2·0)×10^?12 m/V, which are comparable to those of Ba₄Na₂Nb₁₀O₃₀. Temperature dependences of δ₃₃ and δ₃₁ (Miller's δ) were found to be proportional to that of P_s.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Low-energy transition depopulating the isomeric 8+ level in 208Po

Conversion electron measurements of the low-energy transition depopulating the isomeric 8⁺ level in ²⁰⁸Po yielded E_γ = 4025 ± 20 eV and the conversion intensity ratios N₁/N₂ ? 0.2, N₂/N₃ = 0.75 ± 0.10, N_4.5/N₃ ? 0.2, O/N₃ = 0.35 ± 0.10, P/N₃ ? 0.1 and N₃/M₃ = 0.4 ± 0.2. These ratios are in accord with our calculations for the E2 multipolarity and exclude all other multipolarities with L ≦ 4. The total conversion coefficient was calculated to be 1.31 × 10⁷.     

Conductivity enhancement in fluorite-structured Ba1−xLaxF2+x solid solutions

The ionic conductivity of single crystals of the fluorite-structured solid solutions Ba_1?xLa_xF_2+x(10^?3 <×<0.45) has been studied as a function of temperature and composition in the range 300–900 K. Three regions can be discerned in the concentration dependence of the ionic conductivity: a dilute concentration region (x<10^?3), where classic relations between solute content and ionic conductivity hold; an intermediate concentration region (10^?3<x?5×10^?2), where large changes occur in the conductivity activation enthalpy and the magnitude of the conductivity; and a concentrated solid solution region (x?5×10^?2) characterized by enhanced ionic motion. In the dilute region the migration enthalpy for interstitial fluoride ions is determined to be 0.714 eV, while a value of 0.39 eV is found for the (La_BaF_i)^X association enthalpy. The defect chemistry in the intermediate concentration region is shown to be controlled by a superlinear increase of the concentration of mobile defects, while in the concentrated solid solution region a composition-independent amount of ≈1 mole% of interstitial fluoride ions with enhanced mobility, carry the current.     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi_3.25La_0.75Ti₃O₁₂铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi_3.25La_0.75Ti₃O₁₂薄膜未能充分晶化，晶粒细小且有非晶团聚，介电与铁电性能均较差.高于550℃退火处理的Bi_3.25La_{0.75 关键词： 铁电薄膜 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ Sol-Gel工艺