Anomalous shape of cyclotron resonance line in n-GaP in high magnetic fields

Cyclotron resonance in n-GaP has been observed at 119 μm in pulsed magnetic fields up to 410 kG. From the experiments with the magnetic field parallel to the 〈100〉, 〈110〉 and 〈111〉 axes, it is concluded that the transverse effective mass for electron is and that the anisotropy factor of the conduction band is K = 7.9^+3.2_?2.0. An anomalous shape of the absorption curve was found in the magnetic field directions parallel to the crystal axes 〈110〉 and 〈111〉.     

Inclusive production of Ξ+ and Ξ− in K+ p interactions at 32 GeV/c

The inclusive production of $\text{Ξ}{}^{\mathrm{+}}$ and Ξ^? hyperons is investigated in K⁺ p interactions at 32 GeV/c. The production cross sections, 36.4±9 μb for the $\text{Ξ}{}^{\mathrm{+}}$ and 6.5±3 μb for the Ξ^?, are rising strongly with energy similarly to $\text{Λ}$ and Λ production in K⁺ p interactions. The $\text{Ξ}{}^{\mathrm{+}}$ are produced preferentially in the forward direction in the c.m.s., while the Ξ^? are produced dominantly backwards. The average transverse momenta and 〈p_T〉_Ξ^?=0.58±0.09 GeV/c.     

Mixed conduction in Cr-doped GaAs

Hall-effect and magnetoresistance measurements have been carried out in GaAs : Cr as functions of magnetic field strength (B = 0–18kG) and temperature (T = 125–420°K). Independent solutions for the mobilities, μ_n and μ_p, and the carrier concentrations, n and p, are obtained from the basic mixed-conductivity equations. These quantities, as well as the intrinsic carrier concentration, n_i are then calculated as a function of temperature for one sample, and subsequent analysis yields the following values in the range T = 360–420°K: an acceptor (presumably Cr) energy E_A = 0.69±0.02eV (from the valence band); the bandgap energy E_g = E_g0 + αT, with E_go = 1.48±0.02eV, $\text{α ? 3.2 × 10}{}^{\mathrm{?4}}\text{eV}\text{°}\text{K}$; $\text{μ}{}_{\mathrm{n}}\text{= 2700± 100}\text{cm}{}^2\text{V}\text{sec}$, decreasing slightly with temperature; = 350± 50 $\text{cm}{}^2\text{V sec}$; and an acceptor-to-donor concentration ratio, itN_A/N_D?8. The electron mobility appears to be limited by neutral impurity scattering, with N_A ? 2 × 10¹⁶cm^?3. Several other samples were also investigated but as a function of temperature only (at B = 0). At room temperature both positive (p-type) and negative (n-type) Hall coefficients were observed.     

Correlation between band structure and hydride formation in dilute palladium alloys

Data on the free energy change ΔG, following solution of hydrogen in dilute Pd-alloys Pd_1?xM_x have been reviewed for different concentrations of M (M = Au, Ag, Pt, Ir, Rh, V, Cu, Ni, Pb, Sn and Ti) in both the α and β phases. The dependence of ΔG values upon the nature of the substituents (transition metals) is consistently explained within the framework of a metal-hydrogen bonding mechanism in the hydrides. For the β-hydride the ΔG values can be calculated on the basis of the equation ΔG = ΔG_pd + a(T)(〈?^M_LB〉 ? 〈?^Pd_LB〉)x, where $\text{ΔG}{}_{\mathrm{<mtext>Pd</mtext>}}\text{= ? 0.0489}\text{eV}\text{H}$ atom and is the free energy change of solution of hydrogen in pure Pd, a(T) = 0.194 at T = 298 K, 〈?^m_LB〉 and 〈?^pd_LB〉 are the average energies of the lowest band of the pure constituents ($\text{〈?}{}^{\mathrm{<mtext>Pd</mtext>}}{}_{\mathrm{<mtext>LB</mtext>}}\text{〉 = ?9.15}\text{eV}\text{atom}$). The stability of the palladium-hydrogen bond in dilute Pd-alloys depends on the value of 〈?^M_LB〉; for substituents having lower 〈?^M_LB〉 values than Pd the bond will strengthen, while for those having higher 〈?^M_LB〉 values it will weaken. This behaviour agrees well with the general trend of the stability of the stoichiometric hydrides predicted by Gelatt, Ehrenreich and Weiss using band structure results.     

Search for parity-nonconservation effects in deep-inelastic μ-N interaction

The difference of the cross sections for deep inelastic scattering of muons with average momenta 21 GeV/c with right and left helicity at large angles, i.e., with large momentum transfer, has been measured. No statistically-significant dependence of cross sections on the longitudinal polarization of muons has been found, i.e. no parity-nonconservation effects in deep inelastic μN interaction have been observed. The magnitude of the cross-section asymmetry $\text{R =}\text{[〈σ}{}_{\mathrm{<mtext>R</mtext>}}\text{〉 ? 〈σ}{}_{\mathrm{<mtext>L</mtext>}}\text{〉]}\text{[〈σ}{}_{\mathrm{<mtext>R</mtext>}}\text{〉+ + 〈σ}{}_{\mathrm{<mtext>L</mtext>}}\text{〉]}$ may be represented as R = β〈Q²〉 = (? 4 ± 6) × 10^?3 〈Q², (GeV/c)²〉. The limitations G_o^(μ) = (+ 6 ± 10)G have been obtained for the constant G_o^(μ) of vector-axial interaction $\text{(}\text{G}{}_{\mathrm{<mtext>o</mtext>}}{}^{\mathrm{(\mu )}}\text{2}\text{) [}\text{μ}\text{γα(1 + γ}{}_5\text{)μ] J}{}_{\mathrm{\alpha }}{}^{\mathrm{<mtext>o</mtext>}}$ (hadron, V-A).     

Submillimetre cyclotron resonance of electrons in GaP

The first observation of cyclotron resonance in n-type GaP is reported. The electrons were thermally excited at a temperature of 100 K and the resonance was observed at submillimetre wavelengths (337 μm) using a pulsed magnetic field of 0–300 kG. From experiments with B∥〈100〉, 〈110〉 and 〈111〉 it was found that the transverse effective mass for electrons is $\text{m}{}^1{}_{\mathrm{\perp }}\text{= 0.25 ± 0.01 m}{}_0$ and that the anisotropy factor for the conduction band ellipsoids is K = 20⁺¹⁰_-6.     

Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10¹⁵ cm^?3 (pure samples), a high concentration range from 10¹⁶ to 10¹⁸ cm^?3 (p-like samples), and an extremely high concentration range above 10¹⁸ cm^?3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of $\text{10}{}^5\text{cm}{}^2\text{Vs}$. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about $\text{5 × 10}{}^3\text{cm}{}^2\text{Vs}$ to $\text{125}\text{cm}{}^2\text{Vs}$. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to $\text{125}\text{cm}{}^2\text{Vs}$.     

Transverse momenta of partons and dimuons in QCD

Intrinsic (primordial) transverse momenta of quarks and gluons are calculated as well as those arising from recoil (bremsstrahlung) effects, using only the well-known parton distributions as input. The intrinsic k_T's lie typically in the range of 150–250 MeV. Recent approaches using heuristic integro-differential equations for k_T distributions of partons are shown to disagree with the results obtained by rigorous QCD calculations. The transverse momenta of dimuon pairs produced in pp → μ⁺μ^? + X at the ISR can be solely explained by dynamical recoil effects, i.e., $\text{q}\text{q}\text{→(μ}{}^{\mathrm{+}}\text{μ}{}^{\mathrm{?}}\text{)}\text{g and gq}\text{→(μ}{}^{\mathrm{+}}\text{μ}{}^{\mathrm{?}}\text{)}\text{q}$, and no significant intrinsic transverse parton momenta are required. These dimuon transverse momenta show a pronounced energy dependence which could be easily tested at the CERN ISR. The only disagreement occurs for the average dimuon 〈p_T²〉, but not for 〈p_T〉, observed in pN collisions. Possibilities to resolve this problem are discussed. Our results are also compared with previous theoretical analyses.     

Nuclear moments and optical isotope shift of radioactive 133Ba

Mass separated radioactive ¹³³Ba has been investigated by means of optical spectroscopy. From hyperfine structure and isotope shift we obtain the nuclear magnetic moment μ_I = ?0.769(3) μ_n and the change of the nuclear mean square charge radius $\text{δ〈r}{}^2\text{〉 (}{}^{133}\text{Ba}\text{?}{}^{132}\text{Ba}\text{) = ?0.017(3)}\text{fm}{}^2$.     

Quark masses

In quark gluon theory with very small bare masses, -$\text{ψ}$$\text{M}$ψ, spontaneous breakdown of chiral symmetry generates sizable masses M_u, M_d, M_s, … We find ($\text{M}{}_{\mathrm{<mtext>u</mtext>}}\text{+ M}{}_{\mathrm{<mtext>d</mtext>}}\text{) /2 ≈ m}\text{p}\text{/ √6 ≈ 312}\text{MeV}\text{,}\text{and}\text{M}{}_{\mathrm{<mtext>s</mtext>}}\text{≈ 432}\text{MeV}$. Scalar densities have well determined non-zero vaccum expectations $\text{〈0|u}{}^{\mathrm{a}}\text{|0〉 ≡ 〈0|ψ(x) (λ}{}^{\mathrm{a}}\text{/2)ψ(x)/0〉 ≈ ?}{}_{\mathrm{\pi }}{}^2\text{M}{}^{\mathrm{a}}\text{,}\text{i.e}\text{〈0? u}{}^{\mathrm{o}}\text{/vb0〉 ≈ 8 × 10}{}^{\mathrm{?3}}\text{(}\text{GeV}\text{)}{}^3$ at an SU(3) breaking of the vacuum c′ ≡ 〈0|u⁸|〉/〈0|u^o|0〉 ≈ ? 16%     

The Glimm-Jaffe-Spencer expansion for the classical boundary conditions and coexistence of phases in the λφ24 Euclidean (quantum) field theory

The λφ₂⁴ Euclidean (quantum) field theory is studied in the multiphase region, and the following results are proven: (1) The “low temperature” expansion converges for Dirichlet (D), free (F), Neumann (N), and periodic (P), boundary conditions, and the even-point Schwinger functions for these boundary conditions have a mass gap; (2) $\text{〈}\text{o}\text{〉}{}^{\mathrm{b}}\text{=}\text{1}\text{2}\text{〈o〉}{}^{\mathrm{+}}\text{+}\text{1}\text{2}\text{〈o〉}{}^{\mathrm{?}}$, where b = D, F, N, P, and 〈o〉^± are the pure states of Glimm, Jaffe, and Spencer; (3) 〈o〉^±ξ = 〈o〉^± for all ξ > 0, where ξ is the buondary field; (4) alternative characterizations of the pure states 〈·〉^± are given.     

On the mobility of very pure semiconductors at very low temperatures

The mobility μ of a very pure semiconductor at very low temperatures is investigated in terms of a model where electrons are scattered by charged impurities distributed uniformly in space, and the electron-electron interaction is taken into account by the Debye-Hueckel screening in the interaction potential. The equation for the current relaxation rate Γ, derived previously by the proper connected diagram expansion, incorporates the quasi-particle effect in a self-consistent manner. The solution of this equation at high carrier concentrations n yields the so-called Brooks-Herring formula. At lower concentrations, the solution deviates significantly from the latter. The solution is in general smaller than the standard expression for the rate based on the Boltzmann equation; and this is consistent with the existing conductivity data available. At the very low concentrations e.g. n = n₃ = 10¹³cm^?3 or lower for Ge, the mobility calculated is inversely proportional to the square-root of the impurity concentration n_s, and has a $\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$-dependence (T: temperature).

$\text{μ = 0.3597\&z.xl;h}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{k(k}{}_{\mathrm{B}}\text{T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{(ze)}{}^{\mathrm{?1}}\text{n}{}_{\mathrm{s}}{}^{\mathrm{<mtext>?1</mtext><mtext>2</mtext>}}\text{m}{}^1{}^{\mathrm{<mtext>?3</mtext><mtext>4</mtext>}}$

, where k is the dielectric constant. The conductivity data directly comparable with this formula are not available at present. However, the quasi-particle effect which led to this peculiar concentration-dependence should also show itself in the cyclotron resonance width; there, experiment and theory both show the ${}_{\mathrm{n}}{}_{\mathrm{s}}$-dependence for very pure semiconductors.     

Determining the KS→3π amplitude in pp(OR e+e−)→K0K0

The amplitude ratio 〈3π|T|K_S〉/〈3π|T|K_L〉 can be well determined in e⁺e^? (or low energy $\text{p}\text{p}\text{)→K}{}^{\mathrm{o}}\text{K}{}^{\mathrm{o}}$ from the decay time-distribution when each produced kaon→3π, other unknown parameters of the distribution being obtainable from corresponding observations involving known channels like ππ.     

Average polarization of 12B in 12C(μ, ν)12B(g.s.) reaction: Helicity of the π-decay muon and nature of the weak coupling

The helicity, h^?, of μ^? in π-decay has been determined as positive (h^??+0.90) from the average polarization, P_av≡〈J_B·s_μ〉, of ¹²B produced in the $\text{μ}{}^{\mathrm{?}}\text{+}{}^{12}\text{C}\text{→ν}{}_{\mathrm{\mu }}\text{+}{}^{12}\text{B}$ reaction. We obtain also dynamical information on μ-capture: (i) the weak magnetism form factor, μ=4.5±1.1, and (ii) the sum of the induced pseudoscalar (g_p) and the 2nd class induced tensor (g_T) couplings versus g_A, ($\text{g}{}_{\mathrm{<mtext>P</mtext>}}\text{+g}{}_{\mathrm{<mtext>T</mtext>}}\text{)}\text{g}{}_{\mathrm{<mtext>A</mtext>}}\text{=7.1±2.7}$. The latter result, adopting the “canonical” value of $\text{g}{}_{\mathrm{<mtext>P</mtext>}}\text{g}{}_{\mathrm{<mtext>A</mtext>}}$, leads to $\text{g}{}_{\mathrm{<mtext>T</mtext>}}\text{g}{}_{\mathrm{<mtext>A</mtext>}}\text{=+1±2.7}$ which is compatible with zero and in strong contradiction with the value ?—6 recently advocated by Kubodera, Delorme and Rho.     

Electron and hole conductivity in CuInS2

Single crystals of CuInS₂ have been grown from the melt and annealed in In or S to produce good n- or p-type conductivity, respectively. Two donor levels, one shallow and one deep (0.35 eV), and one acceptor level at 0.15 eV are identified. The hole-mobility data are best fitted with an effective mass $\text{m}{}_{\mathrm{<mtext>p</mtext>}}\text{1?1.3m}{}_{\mathrm{e}}$, which can be explained by simple, two band $\text{k}$. $\text{p}$ theory if the valence band has appreciable d character. Above 300°K, the hole mobility falls rapidly, evidently due to multiband conduction and/or interband scattering between the nondegenerate and degenerate valence bands. The conduction band mobility appears to be dominated, in many samples, by large concentrations ( >10¹⁸cm^?3) of native donors and acceptors, which are closely compensated.     

Charge density wave commensurability in 2H-TaS2 and AgxTaS2

The charge density wave transition in 2H-TaS₂near 75 K has been observed to be incommensurate, using electron diffraction, with $\text{q}{}^1\text{= (}\text{0.338}\text{±}\text{0.002}\text{)a}{}^1{}_0$ along the 〈10.0〉 directions which, within the experimental uncertainty, remains temperature independent to about 14 K. Incommensurate charge density formation is also observed in Ag_xTaS₂ samples for $\text{x?}\text{0.26}$ with an increase in q¹ to $\text{(}\text{0.347}\text{±}\text{0.002}\text{)a}{}^1{}_0$ when x?0.26. Within the experimental error q¹ appears to be temperature independent to 25 K.     

A note on the momentum distribution function for an electron gas

The one-electron momentum distribution function $\text{〈a}{}_{\mathrm{k\sigma }}{}^2\text{a}{}_{\mathrm{k\sigma }}\text{〉}$ for an electron gas is investigated by a diagrammatic analysis of perturbation theory. It is shown that $\text{〈a}{}_{\mathrm{k\sigma }}{}^2\text{a}{}_{\mathrm{k\sigma }}\text{〉}$ has the following exact asymptotic form for large k (k ? p_F; p_F, the Fermi momentum): $\text{〈a}{}_{\mathrm{k\sigma }}{}^2\text{a}{}_{\mathrm{k\sigma }}\text{〉 =}\text{4}\text{9}\text{(}\text{αr}{}_{\mathrm{s}}\text{π}\text{)}{}^2\text{×(}\text{p}{}_{\mathrm{<mtext>F</mtext>}}{}^8\text{k}{}^8\text{) g?(0) + ?}$, where g?(0) is the zero-distance value of the spin-up-spin-down pair correlation function. The physical implications of the above asymptotic form are discussed.     

The examination of the Faraday effect and location of the Cr level in Cr doped PbTe

Faraday effect, absorption coefficient and Hall effect have been examined in Cr doped PbTe single crystals. The effective masses of carriers m_F and then values of effective masses at the bottom of conductivity band m_F(0) have been calculated. It is shown that m_F in Cr doped PbTe is comparable with m_F in n-type PbTe not doped with chromium, with the same free carrier concentration, and the relative temperature variation of m_F(0) corresponds to relative variation of Eg. In the absorption spectrum the additional absorption maximum is found at the energy 0.11–0.14 eV. The long-wave side of the peak is shifted towards longer waves as the temperature is increased. Calculation shows that chromium level is located in the conduction band at ΔE = 0.11 eV in the limit T → 0, and is shifted down towards the bottom of the conduction band with a constant rate of $\text{0.8 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range of 4.4–300 K and $\text{3.3 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range 300–800 K.     

Nuclear magnetic moment of the 9.7 h 12− isomer 196mAu

The magnetic hyperfine splitting v_M=|gμ_NB_HF/h| of ^196mAu (j^π=12^?; configuration ¦(π$\text{11}\text{2}$($\text{v}\text{13}\text{2}{}^{\mathrm{+}}\text{)〉}{}_{12}{}^{\mathrm{?}}$; $\text{T}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{= 9.7}\text{h}\text{)}$ as dilute impurity in Ni has been determined with nuclear magnetic resonance on oriented nuclei as 96.0(2) MHz. With the known hyperfine field B_HF = ?264.4(3.9) kG corrected for hyperfine anomalies the g-factor and magnetic moment of ^196mAu are deduced to be |g| = 0.476(7) and |μ| = 5.72(8) μ_N. Taking into account the known magnetic properties of $\text{π}\text{1}\text{2}{}^{\mathrm{?}}$ and $\text{v}\text{13}\text{2}{}^{\mathrm{+}}$ isomeric states in the neighbouring odd Pt, Au and Hg nuclei the structure of the 12^? state is discussed.     

Electrical conductivity and chemical diffusion coefficient measurements in single crystalline nickel oxide at high temperatures

Electrical conductivity measurements on nickel oxide have been performed at high temperatures (1273 K<T< 1673 K) and in partial pressures of oxygen ranging from Po₂ = 1.89 × 10^?4 atm to Po₂ = 1 atm. The $\text{po}{}_2{}^{\mathrm{<mtext>1</mtext><mtext>n</mtext>}}$ dependence of the conductivity decreases from about $\text{1}\text{4}$ for Po₂ = 1 atm to smaller values for lower partial pressures of oxygen. The activation enthalpy for conduction increases for decreasing oxygen partial pressures (from 22.5 kcal mol^?1 at Po₂ = 1 atm to 26.0 kcal mol^?1 for Po₂ = 1.89 × 10^?4 atm). This behaviour can be explained by the simultaneous presence of singly and doubly ionized nickel vacancies, with different energies of formation.Furthermore, chemical diffusion coefficient measurements have been performed in the same temperature range, using the conductivity technique, and leading to the result:

$\text{D}\text{?}\text{= 0.244 exp (?}\text{36,600}\text{RT}\text{) cm}{}^2\text{s}{}^{\mathrm{?1}}$

.