用于高功率系统的掺镱石英光纤研究进展及发展趋势

掺镱石英光纤是掺镱光纤激光器及放大器的重要基础元件.掺镱光纤性能提升是促进掺镱光纤激光器系统功率进一步攀升的关键.本文回顾了高功率掺镱光纤激光器系统功率攀升情况及功率限制性问题,简述了针对激光功率攀升的瓶颈问题所提出的改善性方案.重点阐述了掺镱光纤制备技术、光纤材料、结构性设计在改善功率限制性方面所取得的研究进展,并对未来掺镱石英光纤的研究及发展趋势进行了展望.     

双程掺镱光纤放大器的增益特征及优化

比较了掺钕光纤和掺镱光纤对1064 nm光放大的特点.基于速率方程和传输方程,数值分析了在915 nm泵浦下双程掺镱光纤放大器的增益特征,并且和传统的单程放大进行了比较.分析了信号光和泵浦光,以及粒子数沿着光纤方向的分布特点.最后对双程掺镱光纤放大器进行了优化.     

稀土元素(Ce/Nd/Eu/Gd)与N共掺锐钛矿相TiO_2的第一性原理研究

采用基于密度泛函理论的第一性原理对锐钛矿相TiO_2、稀土元素Ce、Nd、Eu、Gd单掺锐钛矿相TiO_2,以及这四种稀土元素与N共掺锐钛矿相TiO_2前后的几何结构、能带结构、态密度以及光学性质进行了计算.结果表明:四种稀土元素单掺后导致锐钛矿TiO_2晶胞膨胀,晶格发生畸变,禁带宽度变小,而其与N共掺后晶格畸变的程度小于单掺体系,且共掺体系的禁带宽度也减小.在光学性质中,单掺体系和共掺体系的光吸收带边都发生了红移,在可见光区的吸收系数增加,且共掺体系比单掺体系增加程度大,整体有效提高了TiO_2的光催化效率.     

镱铒共掺Al2O3薄膜光致发光特性优化

用中频磁控溅射方法在SiO2/Si基底上制备了五组固定掺铒浓度不同镱铒浓度比率的镱铒共掺Al2O3薄膜样品.室温下测量了薄膜在1.430 μm~1.630 μm波段范围内光致发光光谱.研究发现,镱的掺入有效地提高了三价铒离子的光致发光强度,最优的镱铒掺杂为：掺铒0.33 mol%,Yb3+∶Er3+=10∶1,比相同掺铒浓度单掺铒样品光致发光峰值强度增强40倍;确定的掺铒浓度,有着固定的最佳镱铒浓度比率,主要是镱铒离子间的正向和反向能量传递相互作用的结果,但最佳镱铒浓度比率随着掺铒浓度的增加呈现下降趋势;单掺铒薄膜的光致发光峰值强度随掺铒浓度呈现近Gauss形状变化,而最佳镱铒共掺样品的光致发光峰值强度随掺铒浓度呈现了倒Gauss形状变化.     

保偏光纤掺硼应力棒中掺硼量的模拟计算

基于结构性能定量关系研究思路,把理化性质参量折射率和密度与物质结构参量摩尔折射度以及成分参量掺硼量联系起来,构建了反映物质结构、成分与性质之间关系的数学模型,模拟计算掺硼应力棒中掺硼量.通过实验数据计算出了B_2O_3和SiO_2在掺硼应力棒中的摩尔折射度分别为10.546 13和7.373 32.对该数学模型和计算结果进行了验证,掺硼量计算值与实测值的相对误差在0.5%以内,表明该数学模型的精度高,能够满足生产实践中掺硼应力棒中掺硼量的估算.     

GGA+U方法研究C-Al掺杂GaN的电子结构和光学性质

本文用密度泛函理论的第一性原理,研究了C单掺、Al单掺、C-Al共掺GaN体系的电子结构及光学性质.通过分析发现,与本征GaN相比,掺杂后体系都发生了晶格畸变,其中C-Al共掺GaN体系,较容易形成且禁带宽度明显减小,形成了P型半导体,显著降低了电子跃迁所需要的能量;另外,该共掺体系的静介电常数最大,极化能力最强,介电虚部的主峰向低能区域偏移,并且吸收光谱在可见光范围内产生了红移现象,这都体现了C-Al共掺可以拓展GaN体系对可见光的响应范围.因此,C-Al共掺将有望提高GaN体系的光催化性能.     

双包层掺Bi光纤的制备及其光谱特性研究

用改进的化学气相沉积方法和溶液掺杂方法制备了掺Bi双包层石英基光纤. 测试了掺Bi光纤预制棒切片的吸收光谱和掺Bi光纤在特定波长下的吸收系数,在不同波长的激光激发下, 研究了掺Bi光纤的近红外荧光光谱. 掺Bi光纤在976 nm激光激发下,其荧光光谱范围在1000---1400 nm之间, 荧光峰的峰值位于1140 nm附近,半高宽约为130 nm;在793和808 nm激光激发下得到了 1000---1700 nm的超宽带近红外荧光,半高宽超过250 nm.通过对掺Bi光纤预制棒切片进行900 ℃ 保温1 h的热处理后,发现在808 nm激光 激发下预制棒切片的荧光强度增加了近4倍.研究结果表明,具有超宽带荧光特性的双包层掺Bi光纤 有望作为超短脉冲激光器和可调谐激光器的增益介质.     

钕离子掺杂和钕铝共掺高硅氧玻璃的光谱性质研究

基于多孔玻璃烧结的方法制备了钕离子掺杂和钕铝共掺高硅氧玻璃，测量了掺钕高硅氧玻璃的吸收光谱、荧光光谱和荧光寿命. 利用Judd-Ofelt理论计算得到了钕离子在高硅氧玻璃中的强度参数，计算并对比了掺钕高硅氧玻璃和钕铝共掺高硅氧玻璃的理论荧光寿命、受激发射截面和发光量子效率.讨论了钕铝共掺高硅氧玻璃中铝离子的掺入对玻璃发光性质的影响. 通过与其他掺钕氧化物玻璃和一些商用硅酸盐玻璃的主要光谱性质的比较，掺钕高硅氧玻璃显示了较好的光谱性质，有可能成为一种应用于高能和高频激光领域的新型激光材料. 关键词： 掺钕高硅氧玻璃 钕铝共掺 光谱性质 Judd-Ofelt理论     

掺杂AS2S8非晶态薄膜波导的光阻断效应

实验研究了未掺杂和低浓度掺锡和掺磷的As2S8薄膜波导的光阻断效应,提供了三种样品的光阻断响应曲线、室温退激实验数据和光谱测试数据.结果表明,掺锡样品可以明显提升毫秒级响应的快过程恢复作用,同时还具有减少残留传输损耗的效果,掺磷的效果则相反.结合实验结果给出了分析讨论.     

掺镧PbWO4闪烁晶体的缺陷研究

利用正电子湮没寿命谱(PAT)和X射线电子能谱(XPS)研究了掺镧所引起的PbWO4晶体缺陷的变化.结果表明:掺镧后,PbWO4晶体中的正电子捕获中心铅空位(VPb)浓度增加,并进一步诱导低价氧浓度的增加.讨论了掺La的作用机制,认为掺La将抑制晶体中的氧空位,增加铅空位浓度.     

Ga掺入对立方相MgZnO薄膜晶体结构的影响

采用金属有机物化学气相沉积方法生长了立方相Mg_0.56Zn_0.44O：Ga薄膜,Ga在MgZnO中的摩尔分数为2.8%~4.5%。低掺杂水平的MgZnO可以保持其良好的结晶特性。随着Ga元素的摩尔分数升高至3.1%、3.3%与4.5%,立方相MgZnO中分别出现了Ga₂O₃、ZnO与ZnGa₂O₄分相。其中,Ga₂O₃与ZnGa₂O₄相的出现是由于Ga的掺杂使这两相在MgZnO基质中饱和析出,而ZnO分相被归因于Ga的引入部分破坏了立方MgZnO的亚稳态结构状态,使组分原本就处于分相区的立方MgZnO出现相分离。     

Characterization of ZnO:Ga and ZnO:N films prepared by PLD

The thin films of zinc oxide have been produced by the pulse laser deposition method at various levels of gallium and nitrogen doping. To obtain the n-type films we used gallium doping with concentration of gallium from zero up to 5 at %. The dependence of photoluminescence of the epitaxial ZnO:Ga films on the concentration of gallium doping has been studied. An optimum range of the n-type ZnO films doping with gallium has been determined to obtain highly effective films from the viewpoint of realizing p-n transitions. This range, on the one hand, defines the maximal PL amplitude and, on the other hand, specifies the minimal specific resistance that corresponds to an interval of 0.125–1.000 at % Ga. To produce the p-type ZnO:(Ga, N) films, the ZnO targets with the content of GaN from zero up to 2 at % were used. N₂O was used as a buffer gas. A difference is observed in the positions of the peaks of the emission lines of the photoluminescence spectra for the ZnO films, doped with gallium (Ga) and co-doped with gallium and nitrogen (N).     

Effect of synthesis conditions on microstructures and photoluminescence properties of Ga doped ZnO nanorod arrays

Ga doped ZnO nanorod arrays were prepared on silicon substrates in a mixture solution of zinc nitrate hexahydrate, methenamine, and gallium nitrate hydrate. Effect of synthesis conditions on crystal structures, morphologies, surface compositions, and optical properties was analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence techniques (PL). Experimental results reveal that Ga doping amount can reach 1.67 at% with the increase of gallium nitrate concentration. Ga doping greatly affects the morphologies of ZnO nanorod arrays. The photoluminescence spectra show a sharp UV emission and a broad visible emission. With Ga doping, UV emission has an apparent broadening effect and its peak shifts from 3.27 eV to 3.31 eV. The intensity ratio of UV emission to visible emission demonstrates that appropriate Ga doping amount is beneficial for the improvement of ZnO crystalline quality.     

Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%

We report on the interaction between intentional potassium doping of thin film Cu(In,Ga)Se₂ (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high efficiency CIGS solar cells could not be produced with a gallium/(gallium + indium) ratio higher than 35%. The new doping process step does not only increase solar cell conversion efficiencies up to 20.8%, but also allows a shift in the CIGS absorber composition towards higher gallium content whilst maintaining this high efficiencies level. We find that the saturation of the open circuit voltages for higher gallium content that is normally observed can partially be overcome by the new doping procedure. This observation leads us to the conclusion that even on this high performance level CIGS solar cells still hold a potential for further development beyond the record values reported here. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

生长条件对Ga掺杂ZnO薄膜微观结构及光致发光性能的影响

利用热氧化法在不同参数条件下生长了Ga掺杂范围较宽的ZnO薄膜, 研究了ZnO薄膜的表面微观结构和光致发光性能. 研究表明: Ga以Ga³⁺存在并掺入ZnO晶格取代Zn²⁺, Ga的掺入改变了ZnO薄膜中的缺陷类型及浓度、化学计量比、薄膜表面结晶质量, 进而影响了薄膜的光致发光性能. 随着热氧化温度升高, Ga掺杂量增大, ZnO薄膜的晶粒尺寸增大, 尺寸更均一, 紫外光与可见光强度比增大. 随着热氧化时间延长, Ga掺杂量降低, ZnO薄膜的晶粒尺寸均一性变差, 紫外光与可见光强度比减小.     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Gallium nitride nanoparticle synthesis using nonthermal plasma with gallium vapor

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a N₂ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10–40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.     

绿色GaP-LED中NH3掺杂的动力学

本文研究了NH3作为气相掺杂剂,在GaP-LED层中氮结合的动力学过程;分析讨论了影响外延层中氮浓度的诸因素.     

Interaction of Gallium Atoms with the Surface of the Quartz Cell

The process of interaction of gallium atom vapors with the walls of a quartz cell was spectroscopically investigated. It has been shown that at high temperature (~1080°C) the process of diffusion of gallium atoms into the walls of the cell prevents to reach the densities of the metal vapors in the cell corresponding to the table values for given temperature. After saturation the cell walls by the metal atoms, the density of metal vapor in the volume of the cell increases.     

Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers,in dependence on the growth time in an iodine system

Layers of gallium arsenide with orientation 2° from (111) A in the (110) direction were grown by the open iodide method. A study was made of the morphology, (electron microscope) micromorphology, differential growth rate, and doping level of the layers in dependence on the growth time (1–180 min). The effect of special features of the growth mechanism on the appearance of transitional layers in the doping level is appraised.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 63–69, February, 1973.