极紫外多层膜制备工艺研究

介绍了用平面磁控溅射方法制备极紫外多层膜的研究工作。围绕极紫外多层膜技术 ,重点探讨了多层膜膜厚定标和工艺过程对多层膜结构和内部成分的影响。为深入研究多层膜制备工艺指明了方向。     

极紫外多层膜残余应力初步研究

 针对极紫外多层膜在激光等离子体诊断、极紫外光刻等方面的应用,进行了Mo/Si多层膜残余应力的实验研究,讨论了多层膜残余应力的成因。实验结果表明：Mo单层膜表现为张应力, Si单层膜表现为压应力;通过传统方法制备的13.0 nm处高反射率的40对Mo/Si多层膜会产生-500 MPa左右的压应力,其压应力主要是由膜层之间的贯穿扩散引起的;通过改变膜层比率可以在一定程度上补偿因贯穿扩散产生的压应力,但是以牺牲多层膜反射率为代价。     

极紫外多层膜残余应力初步研究

针对极紫外多层膜在激光等离子体诊断、极紫外光刻等方面的应用,进行了Mo/Si多层膜残余应力的实验研究,讨论了多层膜残余应力的成因。实验结果表明：Mo单层膜表现为张应力, Si单层膜表现为压应力;通过传统方法制备的13.0 nm处高反射率的40对Mo/Si多层膜会产生-500 MPa左右的压应力,其压应力主要是由膜层之间的贯穿扩散引起的;通过改变膜层比率可以在一定程度上补偿因贯穿扩散产生的压应力,但是以牺牲多层膜反射率为代价。     

帽层对极紫外多层膜反射特性影响分析

介绍了在极紫外波段，利用帽层材料来减少多层膜反射镜因外部环境干扰而造成的反射率降低，使多层膜光学元件能够长时间稳定工作.计算了在139nm波长处Mo/Si极紫外多层膜反射镜在表面镀制不同帽层材料时的理论最大反射率，利用单纯形调优法，对帽层和多层膜的周期厚度进行优化，同时把分层理论用于多层膜帽层优化,可使多层膜的反射率得到进一步提高.分析了在加入帽层前后多层膜外层电场强度的分布变化情况. 关键词： 多层膜 反射率 帽层 极紫外     

磁控溅射制备极紫外高反射率多层膜应力研究

为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo_2C/B_4C,Mo/B_4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo_2C,B_4C,单层膜,周期厚度为3.5 nm,30对的Mo_2C/B_4C,Mo/B_4C周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo_2C/B_4C多层膜压应力要远小于Mo/B_4C多层膜,且成膜质量与Mo/B_4C相当。因此Mo_2C/B_4C是应用于6.7 nm反射镜较好的多层膜材料组合。     

磁控溅射制备极紫外高反射率多层膜应力研究

为制备硼边附近6.7 nm波长的极紫外高反射率多层膜反射镜,研究了Mo2C/B4C,Mo/B4C周期多层膜,重点解决薄膜应力难题。采用直流磁控溅射技术制备了膜层厚度为30 nm的Mo,Mo2C,B4C单层膜,周期厚度为3.5 nm,30对的Mo2C/B4周期多层膜。利用台阶仪测试了镀膜前后基底面形,计算并比较了不同薄膜样品的应力值。结果表明Mo2C/B4C多层膜压应力要远小于Mo/B4C多层膜,且成膜质量与Mo/B4C相当。因此Mo2C/B4C是应用于6.7 nm反射镜较好的多层膜材料组合。C,Mo/B4C     

月基极紫外相机多层膜反射镜

月基极紫外相机用于月球表面对地球等离子体层辐射出的30.4 nm谱线进行成像观测,多层膜反射镜是月基极紫外相机的重要光学元件。根据月基极紫外相机技术参数,选择了B₄C/Mg,B₄C/Mg₂Si,B₄C/Al,B₄C/Si,Mo/Si等材料,对其周期厚度、材料比例、周期数等参数进行优化。计算了以上材料组合在30.4 nm的反射率曲线。考虑到月球环境的特殊性和材料的物理化学性质,从中选择出Mo/Si和B₄C/Si两种组合,利用磁控溅射进行镀制。Mo/Si和B₄C/Si多层膜在30.4 nm反射率分别达到15.3%和22.8%。     

极紫外投影光刻原理装置的集成研究

论述了光刻技术发展的历程，趋势和极紫外投影光刻技术的特性，并介绍了极紫外投影光刻原理装置的研制工作，该装置由激光等离子体光源,掠入射椭球聚光镜，透射掩模，施瓦茨微缩投影物镜及相应的真空系统组成，其工作波长为13nm，在直径为0．1mm的像方视场内设计分辨率优于0．1um。     

提高极紫外光谱纯度的多层膜设计及制备

极紫外光刻是实现22nm技术节点的候选技术。极紫外光刻使用的是波长为13.5nm的极紫外光,但在160～240nm波段,极紫外光刻中的激光等离子体光源光谱强度、光刻胶敏感度以及多层膜的反射率均比较高,光刻胶在此波段的曝光会降低光刻系统的光刻质量。从理论和实验两方面验证了在传统Mo/Si多层膜上镀制SiC单层膜可对极紫外光刻中的带外波段进行有效抑制。通过使用X射线衍射仪、椭偏仪以及真空紫外(VUV)分光光度计来确定薄膜厚度、薄膜的光学常数以及多层膜的反射率,设计并制备了[Mo/Si]40SiC多层膜。结果表明,在极紫外波段的反射率减少5%的前提下,带外波段的反射率减少到原来的1/5。     

Fabrication of high-efficiency multilayer-coated binary blazed gratings in the EUV regime

Improving the efficiency of soft X-ray and extreme ultraviolet (EUV) gratings by way of multilayer reflection coatings has been under investigation for many years. Here we present the fabrication and characterization of binary blazed gratings designed to operate in the 14 nm wavelength region. These binary gratings are stepped approximations to the ideal sawtooth blazed-grating profile and are fabricated directly into a layer of photoresist. Normal-incidence reflection efficiencies as high as 25% into the first-diffracted order have been demonstrated.     

19.5nm极紫外反射镜的研制

介绍了一种用于太阳观测19.5nm极紫外多层膜的研究工作。利用软件对规整的Mo/Si膜系结构进行了优化,拓宽了反射带宽,提高了积分反射率。采用双离子束溅射技术,时间控厚,成功制备了该反射镜。通过同步辐射反射率计测试表明,峰值反射率27.5%,均匀性在1%以内,已初步达到预设要求。     

激光等离子体极紫外光刻光源

研究并讨论了下一代光刻的核心技术之一—激光等离子体极紫外光刻光源。简要介绍了欧美和日本等国极紫外光刻技术的发展概况,分析了新兴的下一代13.5 nm极紫外光刻光源的现状,特别讨论了国内外激光等离子体极紫外光刻光源的现状,指出目前其存在的主要问题是如何提高光源的转化效率和减少光源的碎屑。文中同时概述了6.x nm（6.5～6.7 nm）极紫外光刻光源的最新研究工作。最后,介绍了作者所在研究小组近年来在极紫外光源和极紫外光刻掩模缺陷检测方面开展的研究工作。     

Study for dual-function EUV multilayer mirror

Studying the distribution of He⁺ in Earth's plasmasphere by detecting its resonantly scattered emission at 304 Å will record the structure and dynamics of the cold plasma in Earth's plasmasphere on a global scale. EUV imaging systems usually utilizes near-normal incidence optics including multilayer mirror and filter. In this paper, the space condition of the Earth's plasmasphere to confirm the expected performance of mirror were analyzed. In order to achieve higher response at 304 Å and reduce 584 Å radiation for the optical system, a new multilayer coating of Mo/Si with UO₂ was developed. Based on optical constants of Mo, Si and UO₂, we used a simplest method to compute the reflectance of this new multilayer mirror range from 100 to 584 Å. The results show the desirable thickness of UO₂ is 17 Å, and the multilayer mirror has a high reflectance of 26.10% at 304 Å and a low reflectance of 0.52% at 584 Å.     

Mo/Si multilayers used for the EUV normal incidence solar telescope

This paper first reviews an EUV normal incidence solar telescope that we have developed in our lab. The telescope is composed of four EUV telescopes and the operation wavelengths are 13.0 nm, 17.1 nm, 19.5 nm, and 30.4 nm. These four wavelengths, fundamental to the research of the solar activity and the atmosphere dynamics, are always chosen by the EUV normal incidence solar telescope. In the EUV region, almost all materials have strong absorption, so optics used in this region must be coated by the multila...     

Evaluation of lab-scale EUV microscopy using a table-top laser source

High brightness Extreme Ultraviolet (EUV) sources for laboratory operation are needed in nano-fabrication and actinic (“at-wavelength”) inspection of the masks for high volume manufacturing in next generation lithography. Laser-plasma EUV sources have the required compactness and power scalability to achieve the demanding requirements. However, the incoherent emission lacks the brightness for single-shot high contrast imaging. On the other hand, fully coherent sources are considered to be unsuitable for full-field sample illumination and prone to speckles. We evaluate the capabilities of a lab-scale amplified-spontaneous-emission (ASE) EUV laser source to combine brightness and high quality imaging with full-field imaging, along with rapid acquisition and compactness.     

EAST快速极紫外光谱仪波长的原位标定及其应用

介绍了东方超环(experimental advanced supereonducting tokamak, EAST)托卡马克上的两套快速极紫外（EUV）光谱仪系统波长的原位标定方法、结果及其应用。这两套谱仪均为掠入射平场谱仪,时间分辨均为5 ms·frame-1。两套谱仪分别工作在20～500和10～130 Å的波段范围,由步进电机控制探测器在焦平面上移动实现整个观测波段上的波长扫描。利用这两套谱仪系统观测极紫外波段光谱,计算EAST中低-高Z杂质离子特征线辐射强度随时间的演化,监测和研究等离子体中杂质的行为。高Z杂质尤其是钨、钼等金属元素,发出的EUV波段光谱的构成非常复杂,准确识谱对谱仪精确的波长测量能力以及谱分辨能力要求很高,因此精确的波长标定是识别钨、钼等高Z杂质谱线以及研究它们行为的最关键的技术之一。利用EAST等离子体中类氢到类铍的低、中Z杂质的特征谱线以及它们的二阶甚至三阶谱线,结合谱仪系统的色散能力,对这两套快速极紫外光谱仪的波长进行了精确的原位标定。用于波长标定的杂质谱线有O Ⅷ 18.97 Å,O Ⅶ 21.60 Å,C Ⅵ 33.73 Å,Li Ⅲ 113.9 Å,Li Ⅲ 135.0 Å,Li Ⅱ 199.28 Å,Ar ⅩⅤ 221.15 Å,He Ⅱ 256.317 Å,He Ⅱ 303.78 Å,Ar ⅩⅥ 353.853 Å及C Ⅳ 384.174 Å等。利用波长标定的结果对观测到的EUV光谱进行谱线识别,两套谱仪观测到的绝大多数谱线波长与美国技术标准局(National Institute of Standards and Technology, NIST)数据库的标准波长相差分别小于0.08和0.03 Å。开发了谱仪波长原位标定程序模块,将这个模块内嵌到谱仪数据实时上传的交互式软件中,实现了全谱数据以及特征谱线强度随时间演化数据的实时处理和上传。同时利用开发的全谱分析交互式软件以及EAST上的数据查看软件,最终实现了快速EUV谱仪自采数据的准实时分析、读取和查看。     

Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode

We report on recent developments of an “at wavelength” full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nm wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first results obtained from a six inches mask blank prototype as prerequisite for industrial usage.     

高频ECR离子源的最新进展

As they are first optimized for their ion losses,ECRISs are always under a fundamental compromise: having high losses and strong confinement at the same time.To help ECR ion source developers in the design or improvement of existing machines,general comments are presented in a review article being soon published. In this 160 pages contribution,fundamental aspects of ECRISs are presented,with a discussion of electron temperature and confinement and ion confinement.Then,as microwaves play a key role in these machines, a chapter presents major guidelines for microwave launching and coupling to ECR plasma.Moreover,once ECR plasma is created,understanding this plasma is important in ion sourcery;and a section is dedicated to plasma diagnostics with an emphasis on the determination of electron and ion density and temperature by vacuum ultraviolet(VUV)spectroscopy.Another chapter deals with the role of magnetic confinement and presents updated scaling laws.Next chapter presents different types of ECRISs designed according to the main parameters previously described.Finally,some industrial applications of ECRISs and ECR plasmas in general are presented like ion implantation and photon lithography.Some hints taken from this review article are presented in the following article.     

多层介质膜偏振无关光栅的研制

介绍了一种应用于光纤激光光谱合束的高衍射效率多层介质膜偏振无关光栅的设计及制作,给出了设计参数、制作流程和最终制作的偏振无关光栅的测量结果,在1.044~1.084 m波长范围内,实验测得的TE偏振光、TM偏振光的平均衍射效率分别为89.7%,93.8%。