XUV radiation transfer through high-Z metal foil in a laser-produced plasma

Aluminum and gold foils have been irradiated with 1.05-μm, 100-psec laser pulses at an intensity of 3 × 10¹⁴ W/cm². A spatially resolved spectrum of XUV radiation from a rear-side plasma has been observed in the wavelength range from 10 to 100 Å. The spectral intensity for the Al foil decays exponentially with foil thickness and goes to zero at 3 μm. The intensity for the Au foil also decays exponentially up to 1 μm but remains almost constant from 1 to 6 μm. This result for the Au foil indicates that radiation heat conduction plays an important role in energy transport through high-Z plasmas.     

Parallel-plate RF resonator imaging of chemical shift resolved capillary flow

Magnetic resonance imaging has been introduced to study flow in microchannels using pure phase spatial encoding with a microfabricated parallel-plate nuclear magnetic resonance (NMR) probe. The NMR probe and pure phase spatial encoding enhance the sensitivity and resolution of the measurement. In this paper, ¹H NMR spectra and images were acquired at 100 MHz. The B₁ magnetic field is homogeneous and the signal-to-noise ratio of 30 μl doped water for a single scan is 8×10⁴. The high sensitivity of the probe enables velocity mapping of the fluids in the micro-channel with a spatial resolution of 13×13 μm. The parallel-plate probe with pure phase encoding permits the acquisition of NMR spectra; therefore, chemical shift resolved velocity mapping was also undertaken. Results are presented which show separate velocity maps for water and methanol flowing through a straight circular micro-channel. Finally, future performance of these techniques for the study of microfluidics is extrapolated and discussed.     

Flow visualization of relaminarization phenomena in curved pipes and the related measurements

Flow visualization results for secondary flow phenomena at the exit of 90° and 180° bends and helically coiled pipes (1, 2 and 5 turns), (radius of curvatureR _c=381 mm, inside pipe diameterd=37.5 mm, curvature ratiod/2R _c=0.049) and in the downstream straight pipe (l/d=30) are presented to study the stabilizing (relaminarization) effect in curved pipes with fully developed entry turbulent air flow and the destabilizing (re-transition from laminar to turbulent flow) effect in the downstream straight region. The entry Reynolds numbers areRe=2200, 3200, 4300 and 5300). The related measurement results using a hot-film anemometer are presented for developing profiles of the time-mean streamwise velocity distribution and the axial turbulence intensity field in the 180° return bend and in the downstream straight pipe for Reynolds numbersRe=3200, 4300, 6300 and 8200. The time traces showing the output of the hot-film sensor are also presented for developing fluctuating velocity field in the 180° bend and in the downstream straight pipe for the same Reynolds number range. Some aspects of the relaminarization phenomena in curved pipes and the re-transition phenomena from laminar to turbulent flow in the downstream straight pipe are clarified by the present experimental investigation.     

Ferromagnetism of Mn-implanted silicon: Magnetization and magnetooptic faraday effect

Manganese-implanted silicon plates of both n and p types have been obtained by implanting 195-keV manganese ions with doses from 1 × 10¹⁵ to 2 × 10¹⁶ cm^?2. According to magnetic measurements by a vibrating sample magnetometer and a SQUID magnetometer, all of the samples exhibit a ferromagnetic ordering at room temperature. The magnetooptic Faraday effect is manifested in the spectral region 1–6 μm in the temperature interval 80–305 K. The characteristic features of the field and temperature dependences of magnetization and the spectrum of the Faraday effect indicate a percolation type of magnetic ordering at low temperatures and a crucial role of the exchange between delocalized p-type carriers and Mn ions at temperatures above 100 K.     

Ferroelastic detwinning of the high-temperature superconductor YBa2Cu3O7-δ

Crystals of YBa₂Cu₃O_7-δ (YBC) were prepared using a flux technique. The as-grown crystals were typically on the order of 200 μm × 200 μm × 50 μm, where the 50 μm dimension is in the c-direction. Ferroelastic behavior was observed by applying a uniaxial stress along the [100]_tet-direction using a specially-designed fixture which was mounted to a programmable hot/cold stage of a polarizing reflected-light microscope. Domain wall motion was observed for temperatures greater than 200°C, and complete poling was accomplished at stresses on the order of 50–100 MPa at temperatures of 350–400°C. An ionic diffusion-activated mechanism is suggested.     

Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots

The results of investigations of mid-infrared photodetectors based on InAsSbP quantum dot (QD) grown on InAs(100) substrate by modified liquid phase epitaxy are presented. The atomic force microscope measurements have shown that the surface density of grown QDs is (4–8) × 10⁹ cm^?2. Also, the morphology and crystalline quality of grown QDs are investigated by a scanning tunneling microscope. Photodetectors based on n-InAs(100) substrate with InAsSbP QDs on its surface were fabricated in the form of a photoconductor cell. The photoresponse spectrum extended up to 4 μm was observed. The optical properties of fabricated structures were investigated under He–Ne laser irradiation with wavelength of 1.15 μm. It was found that the relative surface conductance increases by 16% at power density of 0.15 W/cm². Capacitance hysteresis with maximal remnant capacitance of 2.17 nF at 10³ Hz was observed as well.     

Experimental observation of electron screening for the D(p, γ)3He nuclear reaction in titanium Deuteride TiD

Characteristics of the pd reaction (p + d → ³He + γ(5.5 MeV)) in titanium deuteride at astrophysical proton-deuteron collision energies ranging from 5.3 to 10.5 keV are investigated. Experiments are conducted on the pulsed plasma Hall accelerator at Tomsk Polytechnic University (Tomsk, Russia). The number of accelerated protons in a pulse 10 μs long is 5 × 10¹⁴ at a repetition rate of 7 × 10^?2 Hz. Gamma rays with an energy of 5.5 MeV are recorded by eight detectors based on NaI(Tl) crystals (100 × 100 × 400 mm) arranged around the TiD target. The dependence of the astrophysical S factor for the pd reaction on the proton-deuteron collision energy and the electron screening potential of protons interacting with deuterons in titanium deuteride are measured for the first time.     

Far-infrared reflection spectra of HgSe

Reflectivity of HgSe (N = 2.0 × 10¹⁸-4.2 × 10¹⁷ cm^-3) was measured in the spectral region from 2–100 μm at temperatures between 95 and 300 K. The frequency of the transverse optical phonon ω_t = 132 ± 2 cm^-1 was determined from Kramers-Kronig analysis. The ω+ mode of the plasmon-LO phonon coupled modes is shown to depend anomalously on temperature. Two extra bands of unknown origin were also observed at about 110 and 120 cm^-1.     

Spatial distribution of EAS radio emission at 32 MHz

The results of the reprocessing of the experimental data on radio emission from extensive air showers (EAS) earlier obtained at the EAS facility (Moscow State University) are reported. The maximum depth distribution of showers is found from analysis of the width of the spatial distribution of radio emission. The average maximum depth is X _max = 655 ± 8 g/cm² for the primary particle energy E ₀ ～ (3–4) × 10¹⁷ eV. The normalized field strength at E ₀ = 10¹⁷ eV is 3.2 ± 0.6 and 2.8 ± 0.4 μV/(m MHz) at distances of 50 and 100 m from the axis, respectively. The accuracy of E ₀ determination from the radio emission field strength at 50 m from the axis is about 20%.     

Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

The paper reports on the barrier mid-wave infrared InAs/InAsSb (x_Sb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, x_Sb = 0.97; barrier doping, N_D < 2×10¹⁶ cm^?3 leading to valence band offset below 100 meV in relation to the active layer doping, N_D = 5×10¹⁵ cm^?3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ～ 10¹¹ Jones at T ～ 100 K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τ_s = 420 ps (T ～ 77 K) was presented with a reduced active layer of d = 1 μm.     

Ge/Si photodiodes and phototransistors with embedded arrays of germanium quantum dots for fiber-optic communication lines

Photodetectors based on Ge/Si multilayer heterostructures with germanium quantum dots are fabricated for use in fiber-optic communication lines operating in the wavelength range 1.30–1.55 μm. These photodetectors can be embedded in an array of photonic circuit elements on a single silicon chip. The sheet density of germanium quantum dots falls in the range from 0.3 × 10¹² to 1.0 × 10¹² cm^?2, and their lateral size is approximately equal to 10 nm. The heterostructures are grown by molecular-beam epitaxy. For a reverse bias of 1 V, the dark current density reaches 2 × 10^?5 A/cm². This value is the lowest in the data on dark current densities available in the literature for Ge/Si photodetectors at room temperature. The quantum efficiency of photodiodes and phototransistors subjected to illumination from the side of the plane of the p-n junctions is found to be 3% at a wavelength of 1.3 μm. It is demonstrated that the maximum quantum efficiency is achieved for edge-illuminated waveguide structures and can be as high as 21 and 16% at wavelengths of 1.3 and 1.5 μm, respectively.     

Investigation of 4H-SiC epitaxial layers implanted by Al ions

4H-SiC epitaxial layers 26 μm thick with N _d ?N _a = 1 × 10¹⁵ cm^?3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 10¹⁶ cm^?2. To produce the p ⁺?n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.     

Properties of straight and curved neutron guide tubes

The properties of straight and curved neutron guides for neutrons of the energy region 4·10^?7 eV≦E≦2·10^?6 eV (very cold neutrons) are investigated. Experimental data for the angular distribution of neutrons emerging from a straight neutron guide are presented and it is shown that they can be theoretically verified using Steyerl's approximation. In the second part we consider a strongly curved neutron guide. The effect of laminating such a guide is investigated experimentally and theoretically and the conditions for optimum transmission are discussed.     

PDC材料烧结过程中钴在金刚石层中的扩散熔渗迁移机制

 讨论了PDC材料烧结过程中钴在金刚石层中的固相扩散、钴液熔渗、两次钴高浓度峰的“波浪”式迁移过程中的运动规律及其作用机制,并根据实验观测的数据进行了有关计算。结果表明：在5.8 GPa、1 300 ℃条件下,钴的扩散系数D≈1.6×10^-7 cm²/s,是一般常压及相同温度条件下钴固相扩散系数（3×10^-10 cm²/s）和相同压力条件下钴的液相扩散系数（5×10^-5 cm²/s）的中间值;对于粒度W≥10 μm的金刚石烧结体系,钴液熔渗作用时间非常短暂,略大于0.5 s,而对于W≤1 μm的超细金刚石烧结体系而言,钴熔渗作用时间为28 s,比粒度W≥10 μm的金刚石烧结要长得多;两次钴高浓度峰的迁移速度分别约为50 μm/s和100 μm/s。     

The nonlinear optical coefficient,phasematching, and optical damage in the chalcopyrite AgGaSe2

We have made a direct measurement of the absolute nonlinear coefficient for AgGaSe₂ by phasematched second harmonic generation. The measured value is d₃₆ = (3.24 ± 0.50) × 10^?11 m/V. For CO and Co₂ lasers the observed phasematching angles for second harmonic generation and frequency mixing are within one degree of the values calculated by fitting the reported index of refraction data to Sellmeier equations. At 1.06 μm the optical damage threshold depends on the number of incident laser pulses. For 1000 pulses damage occurs at 11 MW/cm². The samples were cut from crack-free single crystal boules with absorption coefficient smaller than 0.1 cm^? at 10.6 μm.     

Investigation of p-type strained-layer InxGa1−xAs/AlyGa1−yAs quantum well infrared photodetectors for long wavelength infrared imaging arrays applications

Two p-type compressively strained-layer (PCSL) In_xGa_1−xAs/Al_yGa_1−yAs (where,x=0.4, 0.2;y=0, 0.15) quantum well infrared photodetectors (QWIPs) grown by MBE on (100) semi-insulating (SI) GaAs substrates have been investigated for 3-5 μm MWIR and 8-14 μm LWIR imaging arrays applications. The In_0.4Ga_0.6As/GaAs PCSL-QWIP utilizing the resonant transport mechanism between the heavy-hole type-I states and the light-hole type-II states shows a broadband double-peak response between 8 and 9 μm range. Using compressive-strain in the InGaAs quantum well, normal incident absorption was greatly enhanced by reducing the heavy-hole effective mass and increasing the density of states in the off-zone center. Maximum responsivities of 93 mA W⁻¹and 30 mA W⁻¹were obtained at peak wavelengths of λ_p1=8.9 μm and λ_p3=5.5 μm, respectively atV_b=1.6 V, and detectivity (D*) at λ_p1=8.9 μm was found to be 4.0×10⁹cm−√Hz/WatV_b=0.3 V andT=75 K for this QWIP. The In_0.2Ga_0.8As/Al_0.15Ga_0.85As PCSL-QWIP achieves two-color detection with peak wavelengths at 7.4 μm in the LWIR band and 5.5 μm in the MWIR band. This detector is under background limited performance (BLIP) atT=63 K for biases varying from −2.7 V to +3 V. A detectivity (D*) of 1.06×10¹⁰cm √Hz/Wwas obtained at λ_p7.4 μm,V_b1.0 V andT=81 K for this QWIP.     

Modification of the magnetic properties of polyimide films by cobalt ion implantation

The magnetic characteristics of polyimide films implanted with Co⁺ ions with an energy of 40 keV in the dose range D = 2.50 × 10¹⁶?1.25 × 10¹⁷ cm^?2 at ion current densities j = 4, 8, and 12 μA/cm² have been investigated. It has been shown that, at implantation doses of less than 5 × 10¹⁶ cm^?2, the superparamagnetic properties of modified samples are described by the Langevin equation. At higher doses, there is an intercluster interaction. It has been found that, with an increase in the ion current, the cluster size decreases. The sizes of the formed clusters are determined and vary in the range from 3.9 to 11.0 nm, depending on the implantation dose.     

Scanning laser infrared microscopy of doping inhomogeneities in InAs single crystals

A scanned laser infrared microscope operating at 3.39 μm has produced optical transmission images of n-type InAs with free carrier concentrations ranging from 4.6 × 10¹⁷/cm³ to 2.4 × 10¹⁸/cm³. Variations in these infrared images are explained in terms of the Burstein effect. Images of normally opaque lightly-doped InAs have been produced by temperature-shifting the fundamental absorption edge wavelength. The optical perfection of both lightly- and heavily-doped n-type InAs were thus uniquely determined over large sample volumes.     

Efficiency of applying ammonium oxalate for protection of monumental limestone by poultice, immersion and brushing methods

Samples of cretaceous limestone have been treated with three application methods (poultice, immersion and brushing) using different concentrations of ammonium oxalate solution (AmOx) and varying treatment time in order to test the efficiency of surface and in-depth formation of a protective layer of calcium oxalate (CaOx). Synchrotron-based microanalytical techniques (SR-μXRD with 12.5 μm×7.5 μm (H×V) probe size, SR-μFTIR with 10 μm×10 μm and 8 μm×20 μm probe sizes) and laboratory μFTIR, XRD and SEM have been employed for analysis of the treated samples. Synchrotron-based techniques showed variations in the CaOx distribution along the surface on a micrometer scale. All treatments resulted in the development of a CaOx layer with a maximum thickness of approximately 40 μm. Application by the brushing method with 10 1-min applications with 5-min breaks during one hour showed a development of the calcium oxalate layer equivalent to the poultice treatment taking 10 h. This treatment could be preferred for large marble or limestone surfaces where poultice usage is economically not feasible.     

Surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts

We present the results of a surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts. Films 0.2–0.4 μm in thickness were synthesized in vacuum by means of thermal deposition of the parent substances at a pressure of 5 × 10^?4?1 × 10^?3 Pa and a deposition rate of 3 × 10^?3 μm s^?1 (for NaNd(FOD)₄ films, the deposition rate was 8 × 10^?2 μm s^?1). The microstructure of films depends on the deposition conditions. The films of [NaNd(PTFA)₄] and [NaNd(FOD)₄] complexes and Ln(PTFA)₃ · S₁ adducts have an amorphous structure. The [NaNd(PTFA)₄(Phen)] and Nd(PTFA)₃ · S₂ films are characterized by a more ordered polycrystalline structure with the grain size ranging from 0.2 to 1.5 μm.