掺钠钼电极在硒化铜铟镓（CIGS）太阳能薄膜电池应用

适量钠元素对铜铟镓硒薄膜生长具有促进作用,本文主要研究了掺钠钼电极特性及其对铜铟镓硒薄膜太阳能电池性能的影响。利用磁控溅射方法制备不同厚度的钼钠/钼（MoNa/Mo）薄膜作为背电极,并在（MoNa/Mo）薄膜电极上蒸镀铜铟镓硒（CIGS）薄膜,并利用单质硒源硒化处理后制备CIGS薄膜电池。SEM和XRD结果表明采用三层叠层Mo/Mo/MoNa薄膜做电极的MoNa容易被氧化,电阻率增加,采用四层叠层Mo/Mo/MoNa/Mo薄膜电极方式有效降低电阻率,阻止MoNa被氧化,CIGS晶粒较大且致密。在同一条件下,在不同MoNa/Mo厚度电极上制备CIGS薄膜电池,80nmMoNa厚度上的CIGS薄膜电池效率达6.54%。     

两步法制备CIGS薄膜的工艺研究

本文主要研究了"预制层硒化法"制备铜铟镓硒(CIGS)薄膜的工艺。采用磁控溅射的方式制备In、Cu-Ga金属预制层,然后进行硒化(450℃)以及退火处理(550℃)。SEM结果表明,在室温下溅射沉积In薄膜,并且采用Mo/Cu-Ga/In/Cu-Ga/In的叠层顺序,可以获得平整致密的CIGS薄膜。XRD和SEM测量显示,以单质硒作为硒源,在450℃的硒化之后生成分离的CIS和CGS相,惰性氛围的高温退火可以使分离的CIS和CGS相互融合,形成均一化的CIGS四元化合物。在此基础上,最终完成的CIGS电池光电转换效率为7.5%。     

硒蒸气浓度对制备CIGS薄膜的影响

采用“预制层硒化法”制备CuIn_1-xGa_xSe₂ (CIGS)薄膜. 基于自主设计的“双层管式硒化装置”, 通过控制硒蒸气浓度优化退火工艺, 研究硒蒸气浓度对薄膜光电性能的影响. 利用俄歇电子能谱(AES)和X射线衍射分析(XRD)等手段对不同硒浓度氛围下生成的CIGS薄膜的成分和物相进行表征, 并在AM1.5、1000 W·m^-2的标准光照条件下比较相应CIGS电池器件的输出性能. 实验结果表明: 饱和硒蒸气下退火得到的样品, 基底钼膜遭到严重腐蚀破坏, 失去背电极功能; 在低浓度硒气氛下退火不能有效消除CIGS薄膜的偏析和缺陷, 以致光电转换效率低; 而在无硒惰性氛围下退火的样品, 生成了物相均一化的CIGS薄膜, 由此制备的CIGS电池取得了8.5%的转换效率.     

热处理对电沉积制备CuInGaSe2 薄膜的影响

CuInGaSe2薄膜太阳能电池因具有稳定、高效、低成本和环保等特点而受到国内外科学家的重视.采用Mo/钠钙玻璃衬底为研究电极,饱和甘汞电极(SCE)为参比电极,大面积的铂网电极为辅助电极的三电极体系,在钼/钠钙玻璃衬底上利用电沉积技术制备出太阳能电池用的CuInGaSe2薄膜.分析了不同热处理温度对电沉积制备的CuInGaSe2薄膜的影响,结果表明:当热处理温度为450℃时,所制备的CuInGaSe2薄膜的化学组成接近理想的化学计量比,薄膜具有黄铜矿结构,颗粒均匀和致密性较好.     

铜铟镓硒太阳能电池的机遇与挑战

本文简要回顾了铜铟镓硒薄膜太阳能电池发展的历史,介绍了铜铟镓硒太阳能电池的基本结构、工作原理及相关的薄膜制备技术发展状况和机理研究的进展.在此基础上尝试提出对于未来铜铟镓硒太阳能电池产业化发展至关重要的3个问题：能带优化、铟替代和无镉化工艺.进而对铜铟镓硒太阳能电池在中国的产业化作出展望.     

非化学计量的混合价态氧化钼(VI,V)修饰微电极的电化学制备

在新鲜配制的Na2MoO4的弱酸性水溶液中, 通过循环电位扫描在碳纤维微电极表面可沉积一层均匀的蓝色氧化钼(VI, V)薄膜, 膜的厚度通过电量进行控制。在电沉积之前, 电极的阳极化处理不仅可以加快氧化钼的电沉积, 而且可以改善膜的伏安行为。溶液的pH值对膜的电沉积和伏安行为有极大的影响。膜的阴极过程被认为是产生青钼铜: HxMoO3 (0相似文献   

非化学计量的混合价态氧化钼(Ⅵ,Ⅴ)修饰微电极的电化学制备

在新鲜配制的Na_2MoO_4的弱酸性水溶液中,通过循环电位扫描在碳纤维微电极表面可沉积一层均匀的蓝色氧化钼(VI,V)薄膜,膜的厚度通过电量进行控制.在电沉积之前,电极的阳极化处理不仅可以加快氧化钼的电沉积,而且可以改善膜的伏安行为.溶液的pH值对膜的电沉积和伏安行为有极大的影响.膜的阴极过程被认为是产生青钼铜:H_xMoO_3(0相似文献   

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Ga和Cu/In衬底上电沉积金属Ga

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa₂合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In_1-xGa_x)Se₂(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。     

PZT铁电薄膜底电极制备工艺的研究

利用磁控溅射方法在Si(001)基片上制备Ti/Pt底电极,其厚度大概分别为20、100 nm,其中Ti电极作为缓冲层,随后在上面溅射PZT铁电薄膜.研究了不同电极的制备工艺对电极形貌、取向以及对PZT铁电薄膜的制备带来的影响.结果表明,底电极的溅射温度以及退火温度对于底电极起着至关重要的作用,同时具有良好(111)取向的、致密性较好的底电极对于PZT铁电薄膜的生长具有重要的影响.     

8.01% CuInGaSe2 solar cells fabricated by air-stable low-cost inks

CuInGaSe(2) (CIGS), a promising thin film solar cell material, has gained lots of attention in decades due to its high energy conversion efficiency and potential lower manufacture cost over conventional Si solar cells. As a cheaper processing method compared to vacuum-based techniques, solution-based deposition has been successfully applied to fabricate electronic devices, such as transistors and solar cells. In this paper, we reported CIGS thin film solar cells with an energy conversion efficiency reaching up to 8.01% using air-stable, low-cost inks. The newly developed inks consist of commercially available, low-cost compounds and solvents and can be processed using a variety of printing and coating techniques. More importantly, the inks can produce CIGS films free of copper selenides and amorphous carbon, two common by-products from solution-based CIGS processes. The mechanism for the transformation from metal salt precursor films to CIGS absorber thin films and the influence of selenium vapour pressure on absorber film quality and photovoltaic device performance were investigated and discussed. High-quality CIGS films with micrometer-sized crystals were obtained by using higher selenization partial pressure.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.     

Nanostructured thin films of C60-aniline dyad clusters: electrodeposition, charge separation, and photoelectrochemistry

Clusters of C60-aniline dyads are deposited as thin films on nanostructured SnO2 electrodes under the influence of an electric field. At low applied DC voltage (<5 V) the clusters in toluene/acetonitrile (1:3) mixed solvent grow in size (from 160 nm to approximately 200 nm in diameter) while at higher voltages (>50 V) they are deposited on the electrode surface as thin films. The C60- aniline dyad cluster films when cast on nanostructured SnO2 films are photoelectrochemically active and generate photocurrent under visible light excitation. These nanostructured fullerene films are capable of delivering relatively large photocurrents (up to approximately 0.2 mA cm(-2), photoconversion efficiency of 3-4%) when employed as photoanodes in photoelectrochemical cells. Both luminescence and transient absorption studies confirm the formation of charge transfer product (C60 anion) following UV/Vis excitation of these films. Photo-induced charge separation in these dyad clusters is followed by the electron injection from C60-anion moiety into the SnO2 nanocrystallites. The oxidized counterpart is reduced by the redox couple present in the electrolyte, thus regenerating the dyad clusters. The feasibility of casting high surface area thin fullerene films on electrode surfaces has opened up new avenues to utilize dyad molecules of sensitizer bridge donor type in light energy conversion devices, such as solar cells.     

Integration of microfabricated needle-type glucose sensor devices with a novel thin-film Ag/AgCl electrode and plasma-polymerized thin film: mass production techniques

We developed an integrated array of needle-type biosensors employing a novel process of fabrication, comprising conventional semiconductor fabrication and micromachining technology. Amperometric sensing electrodes with plasma-polymerized films and a thin-film Ag/AgCl reference electrode were directly integrated on a glass substrate with thin-film process, e.g., sputtering. An enzyme was immobilized on the electrode via the plasma-polymerized film, which was deposited directly on the substrate using a dry process. The novel thin-film Ag/AgCl reference electrode showed stable potentials in concentrated chloride solutions for a long period. The plasma-polymerized film is considered to play an important role as an interfacial design between the sensing electrode and the immobilized enzyme considering that the film is extremely thin, adheres well to the substrate (electrode) and has a highly cross-linked network structure and functional groups, such as amino groups. The results showed increments of the sensor signal, probably because the plasma-polymerized film allowed a large amount of enzyme to be immobilized. The greatest advantage is that the process can permit the mass production of high-quality biosensors at a low cost.