Density functional theory study on electron and hole transport properties of organic pentacene derivatives with electron-withdrawing substituent

Attaching electron-withdrawing substituent to organic conjugated molecules is considered as an effective method to produce n-type and ambipolar transport materials. In this work, we use density functional theory calculations to investigate the electron and hole transport properties of pentacene (PENT) derivatives after substituent and simulate the angular resolution anisotropic mobility for both electron and hole transport. Our results show that adding electron-withdrawing substituents can lower the energy level of lowest unoccupied molecular orbital (LUMO) and increase electron affinity, which are beneficial to the electron injection and ambient stability of the material. Also the LUMO electronic couplings for electron transport in these pentacene derivatives can achieve up to a hundred meV which promises good electron transport mobility, although adding electron-withdrawing groups will introduce the increase of electron transfer reorganization energy. The final results of our angular resolution anisotropic mobility simulations show that the electron mobility of these pentacene derivatives can get to several cm(2) V(-1) s(-1), but it is important to control the orientation of the organic material relative to the device channel to obtain the highest electron mobility. Our investigation provide detailed information to assist in the design of n-type and ambipolar organic electronic materials with high mobility performance.     

Nonradiative decay mechanism of fluoren-9-ylidene malononitrile ambipolar derivatives

We report recent results on the nonradiative decay (NRD) of fluoren-9-ylidene malononitrile (FM) ambipolar derivatives (FMDs). 2,7- and 3,6-disubstituted FMDs present distinctive photophysics. Charge separation was found dominant for excited state relaxation. The radiative decay (RD) is sensitive to changes in temperature and solvent medium only for the case of 3,6-FMDs. Excited state deactivation of carbazole-containing 3,6-FMD (CPAFM36) was exclusively nonradiative in polar solvents with excited state lifetimes shorter than 10 ps. The charge separation/recombination mechanism of the corresponding FMDs is suggested to fall in the inverted Marcus region of electron transfer. Given the electron-withdrawing properties of the FM unit, its ambipolar derivatives are suggested as potential candidates for air-stable organic thin-film transistors and molecular organic photovoltaics.     

Photoelectron spectroscopic and theoretical study of aromatics-Pb(m) anionic complexes (aromatics = C6H5, C5H4N, C4H3O, and C4H4N; m = 1-4): a comparative study

The reactions between lead vapored by laser ablation and different aromatic molecules (C6H6, C5H5N, C4H4O, or C4H5N) seeded in argon carrier gas were studied by a reflectron time-of-flight mass spectrometer (RTOF-MS) with a photoelectron spectrometer. The adiabatic electron affinities (EAs) of the dominant anionic products PbmC6H5(-), Pb(m)C5H4N(-) (m = 1-4) and Pb(m)C4H3 (-), Pb(m)C4H4N(-) (m = 1-3) dehydrogenated complexes are obtained from the photoelectron spectra with 308 and 193 nm photon, respectively. It is found that the EAs of Pb(m)C4H4N are higher than those of Pb(m)C6H5, Pb(m)C5H4N, and Pb(m)C4H3O with the same metal number m. The possible structures for Pb(m)C4H4N(-) complexes were calculated with density functional theory (DFT) and the most stable structure was confirmed. The adiabatic detachment energies for the most stable structure were in agreement with the experimental PES results. The calculated density of state (DOS) agrees with the experimental PES spectrum well. It was confirmed by the theoretical calculations that the C4H4N group bonds on lead clusters through the Pb-N sigma bond.     

高性能双极性聚合物半导体材料与晶体管器件

有机聚合物半导体材料与晶体管器件是融合了化学、材料、半导体以及微电子等学科的前沿交叉研究方向.聚合物半导体材料分子是该领域研究的重要内容,其中双极性聚合物分子半导体材料,兼具了电子和空穴的双重载流子输运能力而受到学术界的广泛关注.本文总结了双极性聚合物半导体材料与器件的研究进展,重点介绍了我们在D-A型双极性聚合物分子半导体材料设计、加工技术与器件制备以及功能应用方面的研究工作,并论述了双极性聚合物分子半导体材料与器件研究过程中存在的科学问题及发展方向.     

Tunable self-organization in n-type liquid crystalline dibenzocoronene tetracarboxdiimides for high photoconductivity

ABSTRACT

A comprehensive study on the self-organised mesomorphism and charge-transport properties of three n-type liquid crystalline (LC) dibenzocoronene tetracarboxdiimide derivatives (Dibenzo-CDI 1, 2, 3) bearing branched alkyl chains with varied side-chain length and branching point (α or β site) has been carried out. All three Dibenzo-CDI compounds possessed high solubility in common organic solvents and low-lying lowest unoccupied molecular orbital energy levels below ?4.0 eV indicating their air-stable electron-transport capacity under ambient conditions. It is discovered that the side-chain length has a moderate influence on the molecular arrangement and thus leads to only limited variation of electron-transport properties. In contrast, the branching position plays a critical role on tuning molecular packing and orientation in the bulk mesophases, thereby resulting in dramatic differences in electron mobilities. Remarkably, Dibenzo-CDI 3 demonstrates good photoconductivity by time-of-flight method with high electron mobility up to 0.075 cm²/Vs, close to the highest value reported in certain n-type LC derivatives. All these results reveal that LC Dibenzo-CDI derivatives are potential candidates for high-performance solution-processable electronics, such as air-stable n-type organic field-effect transistors (OFETs) and solar cells.     

Well-Balanced Ambipolar Charge Transport of Diketopyrrolepyrrole-Based Copolymers: Organic Field-Effect Transistors and High-Voltage Logic Applications

A poly (3,6-bis(thiophen-2-yl)−2,5-bis(2-decyltetradecyl)−2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione-co-(2,3-bis(phenyl)acrylonitrile)) (PDPADPP) copolymer, composed of diketopyrrolopyrrole (DPP) and a cyano (nitrile) group with a vinylene spacer linking two benzene rings, is synthesized via a palladium-catalyzed Suzuki coupling reaction. The electrical performance of PDPADPP in organic field-effect transistors (OFETs) and circuits is investigated. The OFETs based on PDPADPP exhibit typical ambipolar transport characteristics, with the as-cast OFETs demonstrating low field-effect hole and electron mobility values of 0.016 and 0.004 cm² V⁻¹ s⁻¹, respectively. However, after thermal annealing at 240 °C, the OFETs exhibit improved transport characteristics with highly balanced ambipolar transport, showing average hole and electron mobility values of 0.065 and 0.116 cm² V⁻¹ s⁻¹, respectively. To verify the application of the PDPADPP OFETs in high-voltage logic circuits, compact modeling using the industry-standard small-signal Berkeley short-channel IGFET model (BSIM) is performed, and the logic application characteristics are evaluated. The circuit simulation results demonstrate excellent logic application performance of the PDPADPP-based ambipolar transistor and illustrate that the device annealed at 240 °C exhibits ideal circuit characteristics.     

Synthesis, properties, and ambipolar organic field-effect transistor performances of symmetrically cyanated pentacene and naphthacene as air-stable acene derivatives

5,12-Dicyanonaphthacene and 6,13-dicyanopentacene have been synthesized for the first time. The LUMO and HOMO levels are deepened as predicted and fabricated organic field-effect transistors (OFETs) showed ambipolar responses with carrier mobilities of 10(-3) cm(2)/V·s.     

Air-stable ambipolar field-effect transistors based on copper phthalocyanine and tetracyanoquinodimethane

The fabrication of air-stable ambipolar organic field-effect transistors with sandwich-type and bilayer architecture based on copper phthalocyanine and 7,7,8,8-tetracyanoquin odimethane is reported. In comparison with bilayer devices, the sandwich-type configuration enhances the performance and reproducibility of ambipolar devices, which is mainly ascribed to the double conductive channels in the sandwich-type structure. The measured p-channel and n-channel mobility of sandwich-type devices are comparable to that of copper phthalocyanine and 7,7,8,8-tetracyanoquinodimethane single layer devices, respectively.     

Progress of pyrene-based organic semiconductor in organic field effect transistors

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes (OLEDs), organic field effect transistors (OFETs), and organic solar cells (OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006, illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.     

Electron transport in solution-grown TIPS-pentacene single crystals: Effects of gate dielectrics and polar impurities

The n-channel behavior has been occasionally reported in the organic field-effect transistors (OFETs) that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis (benzocyclobutene) (BCB) dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TIPS-pentacene single crystals on five polymer gate dielectrics including polystyrene (PS), poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP), poly(vinyl alcohol) (PVA) and poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)). In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA (40 nm) and a bilayer dielectric of PMMA on P(VDF-TrFE-CFE), while does not on PVP and thin PVA (2 nm). The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups (in PVP and PVA) and reduced injection barrier by Na⁺ ions (as impurity in PVA). The highest electron mobility of 0.48 cm² V^-1 s^-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.     

Tuning orbital energetics in arylene diimide semiconductors. materials design for ambient stability of n-type charge transport

Structural and electronic criteria for ambient stability in n-type organic materials for organic field-effect transistors (OFETs) are investigated by systematically varying LUMO energetics and molecular substituents of arylene diimide-based materials. Six OFETs on n+-Si/SiO2 substrates exhibit OFET response parameters as follows: N,N'-bis(n-octyl)perylene-3,4:9,10-bis(dicarboximide) (PDI-8): mu = 0.32 cm2 V(-1) s(-1), Vth = 55 V, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dibromoperylene-3,4:9,10-bis(dicarboximide) (PDI-8Br2): mu = 3 x 10(-5) cm2 V(-1) s(-1), Vth = 62 V, I(on)/I(off) = 10(3); N,N'-bis(n-octyl)-1,6,7,12-tetrachloroperylene-3,4:9,10-bis(dicarboximide) (PDI-8Cl4): mu = 4 x 10(-3) cm2 V(-1) (s-1), Vth = 37 V, I(on)/I(off) = 10(4); N,N'-bis(n-octyl)-2-cyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN): mu = 4.7 x 10(-3) cm2 V(-1) s(-1), Vth = 28, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2): mu = 0.13 cm2 V(-1) s(-1), Vth = -14 V, I(on)/I(off) = 10(3); and N,N'-bis(n-octyl)-2,6-dicyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN2): mu = 0.15 cm2 V(-1) s(-1), Vth = -37 V, I(on)/I(off) = 10(2). Analysis of the molecular geometries and energetics in these materials reveals a correlation between electron mobility and substituent-induced arylene core distortion, while Vth and I(off) are generally affected by LUMO energetics. Our findings also indicate that resistance to ambient charge carrier trapping observed in films of N-(n-octyl)arylene diimides occurs at a molecular reduction potential more positive than approximately -0.1 V (vs SCE). OFET threshold voltage shifts between vacuum and ambient atmosphere operation suggest that, at E(red1) < -0.1 V, the interfacial trap density increases by greater than approximately 1 x 10(13) cm(-2), while, for semiconductors with E(red1) > -0.1 V, the trap density increase is negligible. OFETs fabricated with the present n-type materials having E(red1) > -0.1 V operate at conventional gate biases with minimal hysteresis in air. This reduction potential corresponds to an overpotential for the reaction of the charge carriers with O2 of approximately 0.6 V. N,N'-1H,1H-Perfluorobutyl derivatives of the perylene-based semiconductors were also synthesized and used to fabricate OFETs, resulting in air-stable devices for all fluorocarbon-substituted materials, despite generally having E(red1) < -0.1 V. This behavior is consistent with a fluorocarbon-based O2 barrier mechanism. OFET cycling measurements in air for dicyanated vs fluorinated materials demonstrate that energetic stabilization of the charge carriers results in greater device longevity in comparison to the OFET degradation observed in air-stable semiconductors with fluorocarbon barriers.     

Bithiophene-imide-based polymeric semiconductors for field-effect transistors: synthesis, structure-property correlations, charge carrier polarity, and device stability

Developing new high-mobility polymeric semiconductors with good processability and excellent device environmental stability is essential for organic electronics. We report the synthesis, characterization, manipulation of charge carrier polarity, and device air stability of a new series of bithiophene-imide (BTI)-based polymers for organic field-effect transistors (OFETs). By increasing the conjugation length of the donor comonomer unit from monothiophene (P1) to bithiophene (P2) to tetrathiophene (P3), the electron transport capacity decreases while the hole transport capacity increases. Compared to the BTI homopolymer P(BTimR) having an electron mobility of 10(-2) cm(2) V(-1) s(-1), copolymer P1 is ambipolar with balanced hole and electron mobilities of ～10(-4) cm(2) V(-1) s(-1), while P2 and P3 exhibit hole mobilities of ～10(-3) and ～10(-2) cm(2) V(-1) s(-1), respectively. The influence of P(BTimR) homopolymer M(n) on film morphology and device performance was also investigated. The high M(n) batch P(BTimR)-H affords more crystalline film microstructures; hence, 3× increased electron mobility (0.038 cm(2) V(-1) s(-1)) over the low M(n) one P(BTimR)-L (0.011 cm(2) V(-1) s(-1)). In a top-gate/bottom-contact OFET architecture, P(BTimR)-H achieves a high electron mobility of 0.14 cm(2) V(-1) s(-1), only slightly lower than that of state-of-the-art n-type polymer semiconductors. However, the high-lying P(BTimR)-H LUMO results in minimal electron transport on exposure to ambient. Copolymer P3 exhibits a hole mobility approaching 0.1 cm(2) V(-1) s(-1) in top-gate OFETs, comparable to or slightly lower than current state-of-the-art p-type polymer semiconductors (0.1-0.6 cm(2) V(-1) s(-1)). Although BTI building block incorporation does not enable air-stable n-type OFET performance for P(BTimR) or P1, it significantly increases the OFET air stability for p-type P2 and P3. Bottom-gate/top-contact and top-gate/bottom-contact P2 and P3 OFETs exhibit excellent stability in the ambient. Thus, P2 and P3 OFET hole mobilities are almost unchanged after 200 days under ambient, which is attributed to their low-lying HOMOs (>0.2 eV lower than that of P3HT), induced by the strong BTI electron-withdrawing capacity. Complementary inverters were fabricated by inkjet patterning of P(BTimR)-H (n-type) and P3b (p-type).     

Theoretical Studies on Novel Gridspiroarenes: Structures,Noncovalent Interactions and Reorganization Energies

Organic semiconductor materials with low reorganization energy have various applications such as in organic light‐emitting diodes (OLEDs), organic field‐effect transistor (OFETs) and organic solar cells (OSCs). In this work, we have designed a new class of gridspiroarenes (GS‐SFX and GS‐SITF) with #‐shaped structures, which have novel crisscross geometrical structures compared to widely used spirocyclic arenes—SFX and SITF. The structure electronic properties, adiabatic ionization potentials (IP_a), adiabatic electron affinities (EA_a) and reorganization energies (λ) of GS‐SFX and GS‐SITF have been calculated using density functional theory (DFT) method. The calculated HOMO and LUMO spatial distributions suggest that GS‐SFX and GS‐SITF have better transport properties. The noncovalent interaction analysis shows the weak intramolecular interactions between their arms. The results indicate that the reorganization energies of GS‐SFX and GS‐SITF are significantly reduced compared to the dimer structures—DSFX and DSITF. Furthermore, the GS‐SITF1 which is one of the isomers of GS‐SITF exhibits the lowest values for λ(h) (0.067 eV) and λ(e) (0.153 eV). Therefore, we believe the predicted structure, electronic property, and reorganization energy are good indicator for transport materials. This work has systematically studied the effect of gridization, which provides insights to design organic semiconductor materials with excellent charge transport properties.     

Synthesis and characterization of a novel ambipolar polymer semiconductor based on a fumaronitrile core as an electron‐withdrawing group

Two conjugated polymers containing stilbene and fumaronitrile moieties were synthesized to investigate their electronic properties by the existence of electron‐withdrawing cyano groups on a vinylene backbone. The cyclic voltammetry investigation and time‐dependent density functional theory calculations indicated that the cyano substituents lowered the lowest unoccupied molecular orbital (LUMO) energy level by about 0.65 and 0.63 eV, respectively. The lowering of the LUMO energy levels due to the electron‐withdrawing properties of the cyano substituents could enhance electron injection capability. Furthermore, bithiophene‐fumaronitrile (donor‐acceptor) intermolecular interaction facilitates the self‐assembly of the polymer chains. Organic field‐effect transistors (OFETs) based on PBTSB without the electron‐withdrawing group only exhibit hole transport, while OFETs based on PBTFN with cyano substituents exhibit ambipolar characteristics. The growth of PBTFN crystalline fibrils was observed with increasing annealing temperature, which enhanced hole and electron mobility. A complementary‐like inverter using PBTFN with ambipolar properties exhibited good symmetry with an inverting voltage nearly half that of the power supply with a gain of 9 at V_DD = 100 V. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

二萘嵌苯二酰亚胺衍生物的半导体性质

应用密度泛函理论研究了四种二萘嵌苯二酰亚胺(PDI)(N,N'-二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(1), N,N'-二(3-氯苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(2), N,N'-二(3-氟苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(3)和N,N'-二(3,3-二氟苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(4))半导体材料的最高占据轨道和最低未占据轨道能量、离子化能和电子亲和能以及在电荷传导过程中的重组能. 与化合物2-4的最高占据轨道和最低未占据轨道能量变化相同, 在PDI分子外围引入氯苯甲基或氟苯甲基后导致化合物2-4的绝热电子亲和能有不同程度的增加. 应用Marcus电子传导理论, 计算了这四种半导体材料应用于有机场效应晶体管在电子传递过程中的电子耦合和迁移率. 计算结果表明:这四种化合物相对于金属金电极而言具有较小的电子注入势垒, 是优良的n型半导体材料. 计算的这四种半导体材料的电子传输迁移率分别为5.39, 0.59, 0.023和0.17 cm2·V-1·s-1. 通过研究化合物分子在还原过程中几何结构变化和在化合物3晶体中不同类型的电子传递路径, 合理地解释了化合物1-4在有机场效应晶体管电荷迁移过程中具有较高的电子迁移率.     

Corannulene derivatives for organic electronics: From molecular engineering to applications

This paper intends to provide an overview for using corannulene derivatives in organic electronics such as organic field-effect transistors (OFETs), organic solar cells (OSCs), and organic light-emitting diodes (OLEDs). We highlight the rational design strategies, tuning molecular orbital energy levels and arrangement in single crystals of corannulenes. The topological structure and properties of corannulene make it a unique candidate for organic electronics.     

Air-stable n-type organic field-effect transistors based on solution-processable, electronegative oligomers containing dicyanomethylene-substituted cyclopenta[b]thiophene

Solution-processable, electronegative, π-conjugated systems containing dicyanomethylene-substituted cyclopenta[b]thiophene were synthesized as potential active materials for air-stable n-type organic field-effect transistors (OFETs). Electrochemical measurements revealed that these compounds exhibited electrochemical stability and that the lowest unoccupied molecular orbital (LUMO) had an energy level less than -4.0 eV. Flash-photolysis time-resolved microwave conductivity (FP-TRMC) measurements were performed, and the value of intradomain electron mobility was determined to be as high as 0.1 cm(2) V(-1) s(-1) . The OFETs were fabricated by spin-coating thin films of the compounds as an active layer. The electron mobility of the OFETs was 3.5×10(-3) cm(2) V(-1) s(-1) in vacuum. Furthermore, electron mobility of the same order of magnitude and stable characteristics were obtained under air-exposed conditions. X-ray diffraction measurements of the spin-coated thin films revealed the difference of molecular arrangements depending on the inner conjugated units. Atomic force microscopy measurements of crystalline-structured films exhibited the formation of grains. The accomplishment of air-stability was attributed to the combined effect of the low-lying LUMO energy level and the molecular arrangements in the solid state, avoiding both the quenching of electron carriers and the intrusion of oxygen and/or moisture.     

Rational Design of Ambipolar Organic Semiconductors: Is Core Planarity Central to Ambipolarity in Thiophene–Naphthalene Semiconductors?

Herein, we report a new family of naphthaleneamidinemonoimide-fused oligothiophene semiconductors designed for facile charge transport in organic field-effect transistors (OFETs). These molecules have planar skeletons that induce high degrees of crystallinity and hence good charge-transport properties. By modulating the length of the oligothiophene fragment, the majority carrier charge transport can be switched from n-type to ambipolar behavior. The highest FET performance is achieved for solution-processed films of 10-[(2,2'-bithiophen)-5-yl]-2-octylbenzo[lmn]thieno[3',4':4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (NDI-3 Tp), with optimized film mobilities of 2×10(-2) and 0.7×10(-2) cm(2) V(-1) s(-1) for electrons and holes, respectively. Finally, these planar semiconductors are compared with their twisted-skeleton counterparts, which exhibit only n-type mobility, in order to understand the origin of the ambipolarity in this new series of molecular semiconductors.     

Molecular and Electronic‐Structure Basis of the Ambipolar Behavior of Naphthalimide–Terthiophene Derivatives: Implementation in Organic Field‐Effect Transistors

A new family of naphthalimide‐fused thienopyrazine derivatives for ambipolar charge transport in organic field‐effect transistors is presented. Their electronic and molecular structures were elucidated through optical and vibrational spectroscopy aided by DFT calculations. The results indicate that these compounds have completely planar molecular skeletons which promote good film crystallinity and low reorganization energies for both electron and hole transport. Their performance in organic field‐effect transistors is compared with twisted and planar naphthaleneamidine monoimide‐fused terthiophenes in order to understand the origin of ambipolarity in this new series of molecular semiconductors.