羧酸衍生物取代甲基苯基聚硅烷制备杂取代聚硅烷

以甲基苯基聚硅烷　(PhSiMe　) n为原料 ,在无水AlCl3 存在下 ,通过与酰氯、酸酐及酯的取代反应合成了氯代聚硅烷及一系列共聚物 .在乙酰氯的作用下 ,　(PhSiMe　) n上的苯基能够被近乎完全的取代而生成氯代聚硅烷 .一元酸酐 (乙酸酐和丙酸酐 )在用酰氧基部分取代聚硅烷上苯基的同时 ,进行得更多的还是Cl取代 .而顺丁烯二酸酐、邻苯二甲酸酐和乙酸乙酯则只进行不完全的Cl取代 ,根据分子活性的不同得到取代比率各不相同的共聚物 .初步分析了各反应的过程 ,讨论了影响反应的因素 ,同时对于各产物的荧光和紫外特性也进行了分析和讨论     

Phthalocyanines and related compounds: XLIII. Synthesis of poly[phenyl(alkyl)sulfanyl]-substituted phthalonitriles and some phthalocyanines based thereon

Nucleophilic substitution of chlorine atoms in tetrachlorophthalonitrile by benzene- and alkanethiols in the presence of a base was studied at different reactant ratios. The substitution is characterized by complete regioselectivity: the chlorine atom in position 4 of tetrachlorophthalonitrile is replaced first; next follows replacement of the 5-chlorine atom. The reactions of tetrachlorophthalonitrile with nucleophiles at ratios of 1:2 and 1:4 lead to the formation of the corresponding 3,6-dichloro-4,5-bis[phenyl(alkyl)sulfanyl]- and tetrakis[phenyl(alkyl)sulfanyl]phthalonitriles. The latter were converted into metal complexes of [phenyl-(alkyl)sulfanyl]-substituted phthalocyanines which absorb in the red and near-IR regions of the electronic spectra.     

THE CRYSTAL STRUCTURE OF 2-[(N,N-DIMETHYLAMINO)METHYL]BENZENETELLURENYL CHLORIDE

The crystal structure of 2-[N,N-dimethylamino)methyl]benzenetel-lurenyl chloride (2), a compound previously formulated as bis[[2-(N,N-dimethylamino)methyl]phenyl] ditelluride bis hydrochloride (1a), was determined. In the molecule 2, tellurium is bonded to the carbon of the phenyl group [2.120(3) Å], the nitrogen of the ortho dimethylamino substituent [2.362(3) Å], and the chlorine atom [2.536(1) Å]. There also is an intermolecular interaction of the tellurium atom with the phenyl ring of a neighbouring molecule [3.655(1) Å], resulting in the formation of zigzag chains along the b axis. The noncentrosymmetric space group of the crystal can be explained by the chiral surrounding of tellurium.     

平面五配位硅、 锗XBe5H6(X=Si,Ge)团簇

采用密度泛函理论PBE0方法, 在aug-cc-pVTZ水平上理论预测了含平面五配位硅和锗原子的XBe₅H₆ (X=Si, Ge)团簇. 势能面系统搜索及高精度量化计算表明, 它们均为全局极小结构. XBe₅H₆(X=Si, Ge)团簇整体呈完美的扇形结构: Si/Ge原子被5个金属Be原子配位; 4个H原子以桥基方式与Be原子相键连, 剩余的2个 H原子以端基方式与两端的Be原子成键. 化学键分析表明, XBe₅H₆(X=Si, Ge) 团簇中XBe₅单元具有完全离域的1个π及3个σ键, 外围铍氢间形成4个Be—H—Be 三中心二电子(3c-2e)键及2个定域的Be—H键. XBe₅单元上离域的2π及6σ电子赋予体系π和σ双重芳香性, 并使Si/Ge原子满足八隅律（或八电子规则）. 能量分解-化学价自然轨道分析揭示, Si/Ge和Be₅H₆之间主要为电子共享键.     

Fluoride-promoted cross-coupling of chloro(mono-, di-, or triphenyl)germanes with aryl halides in "moist" toluene. Multiple transfer of the phenyl group from organogermane substrates and comparison of the coupling efficiencies of chloro(phenyl)germanes with their corresponding stannane and silane counterparts

The trichlorophenyl-, dichlorodiphenyl-, and chlorotriphenylgermanes undergo Pd-catalyzed cross-couplings with aryl bromides and iodides in the presence of tetrabutylammonium fluoride in toluene with addition of the measured amount of water. One chloride ligand on the Ge center allows efficient activation by fluoride to promote transfer of one, two, or three phenyl groups from the organogermanes. The corresponding chlorophenylstannanes were found to be more reactive than chlorophenylsilanes, which in turn were more effective than chlorophenylgermanes. One chloride ligand on the Ge or Si center allows efficient activation by fluoride to promote transfer of up to three aryl groups from germane or silicon. However, no haloligand was necessary to be present on the Sn center, since tetraphenyltin efficiently transferred up to four phenyl groups during fluoride-promoted couplings with aryl halides. (19)F NMR studies suggested formation of the fluorophenylgermanes and the hypervalent germanate species as possible intermediates.     

Hydroalumination of a Chlorotrialkynylsilane: Spontaneous Stepwise 1,3‐Dyotropic Rearrangement via an Intermediate Silyl Cation

A new functionalised alkynylsilane, Cl‐Si(C?C‐CMe₃)₃ ( 3 ), was obtained by a facile multistep synthesis. Treatment of 3 with equimolar quantities of the hydrides H‐M(CMe₃)₂ (M=Al, Ga) gave the mixed alkenyl‐di(alkynyl)silanes, in which the chlorine atom adopts a bridging position between the aluminium and silicon atoms. Dual hydrogallation of 3 resulted in the formation of a di(alkenyl)‐alkynylsilane containing two gallium atoms, one of which is coordinated to the chlorine atom, and the second is bonded to the α‐carbon atom of the remaining alkynyl group. A tert‐butylsilane was unexpectedly formed by a unique 1,3‐dyotropic chlorine–tert‐butyl exchange for the corresponding dialuminium compound. One aluminium atom is bonded to a tert‐butyl group, a terminal chlorine atom and the α‐carbon atom of the ethynyl moiety; the second is coordinatively unsaturated, with two terminal tert‐butyl substituents. High‐level quantum‐chemical calculations favour a stepwise dyotropic rearrangement with an intermediate cationic silicon species over a simultaneous tert‐butyl–chlorine migration via a five‐coordinate silicon atom in the transition state.     

An electronegativity-induced spin repulsion effect

We present a spin delocalization effect in radical Si-containing systems, featuring a heteroatom of high electronegativity (such as N, O, or Cl) bonded to the unsaturated Si atom. We find that the higher the electronegativity of the heteroatom, the more the localized spin shifts away from the unsaturated Si atom and the heteroatom toward saturated Si neighbors. We demonstrate that this spin repulsion toward saturated Si atoms is induced by the electronegativity difference between the Si atom and the heteroatoms. We present a simple molecular-orbital-based mechanism which fully explains the structural and electronic effects. We contrast the present spin delocalization mechanism with the classical hyperconjugation in organic chemistry. The most important consequences of this spin redistribution are the electron-spin-resonance activity of the saturated Si neighbors and the enhanced stability of the radical centers. We predict a similar effect for Ge radicals and discuss why organic systems based on carbon do not feature such spin repulsion.     

Two-photon chemistry in the laser jet: generation of radical intermidiates and their photochemical transformations

The novel laser jet technique provides sufficiently high photon densities to permit the observation of the photochemistry of photochemically generated radicals (two-photon chemistry) in the liquid phase. Four recent applications of this novel photochemically useful method are presented: these include the photochemistry of hydroxydiphenylmethyl, 9-hydroxyxanthenyl, diphenylmethyl, and benzoyl radicals under laser jet and normal photolysis conditions.

The regioselectivity of cross-coupling reactions of hydroxydiphenylmethyl or 9-hydroxyxanthenyl radicals with solvent-derived radicals changes when these species are electronically excited,i.e. under the high intensity conditions of the laser jet, cross-coupling at the para position (head-to-tail combination) is significantly enhanced relative to the normal coupling mode at the hydroxy-bearing radical site (head-to-head combination). Semiempirical calculations of the spin density distributions for the ground and first excited states of the radicals confirm the change in spin density from the hydroxy-bearing carbon atom to the conjugating benzene rings in these radical species on photoexcitation.

For the diphenylmethyl radical, two reaction pathways have been observed under the high photon densities of the laser jet: the electronically excited diphenylmethyl radical can either abstract a chlorine atom from carbon tetrachloride through an electron transfer process or can be photoionized on further photoexcitation (multiphoton chemistry). The resulting benzhydryl cation was trapped by methanol as the corresponding ether product, which unequivocally demonstrates that carbene formation by photoejection of a hydrogen atom does not take place under laser jet photolysis conditions.

An advantage of the high photon densities produced in laser jet photolysis is the high steady state concentration of short-lived transients that are generated, which enable unprecedented intermolecular reactions to be observed. Thus, about a millimolar concentration of tert-butoxy radicals can be obtained in the laser jet photocleavage of tert-butyl peroxide. When the tert-butoxy radicals are produced in the presence of benzaldehyde, the main product is tert-butyl benzoate. If carbon tetrachloride is also present, chlorobenzene can be detected. This is rationalized as the product derived from chlorine abstraction by phenyl radicals, which are presumably produced by the photodecarbonylation of benzoyl radicals.

An alternative method of obtaining benzoyl radicals is the two-photon cleavage of benzil. The laser jet photolysis of benzil in tert-butyl peroxide yields mainly tert-butyl benzoate, whereas in carbon tetrachloride, benzoyl chloride, chlorobenzene and ,,-trichloroacetophenone are observed. The first two products result from chlorine atom abstraction by the photochemically generated benzoyl and phenyl radicals, and the last product from in-cage cross-coupling between benzoyl and trichloromethyl radicals.

Such product studies provide detailed mechanistic information on the photochemical behaviour of electronically excited, short-lived transients which complements nicely the kinetic and spectral data of time-resolved laser flash studies. Consequently, the laser jet technique constitutes a valuable tool for determining the mechanism of two- photon reactions.     

Computational study of 19F NMR spectra of double four ring-containing Si/Ge-zeolites.

(19)F NMR chemical shifts are calculated in order to study the F(-) environment in double four ring (D4R) containing Si/Ge-zeolites. The calculations with the DFT/CSGT/B3PW91 methodology yielded an agreement within 2 ppm with respect to the experimental peaks corresponding to the D4R units containing 8Si0Ge, 7Si1Ge and 0Si8Ge of the octadecasil zeolite. The optimisation of the 7Si1Ge-, 6Si2Ge-, 5Si3Ge- and 4Si4Ge-D4R units with DFT/B3LYP methodology shows that a covalent Ge-F bond is formed and therefore a Ge atom in the D4R is pentacoordinated. The displacement of the fluoride ion towards a Ge atom in the Ge-containing D4R units locates four Si/Ge atoms in the close vicinity of the F(-) and this makes possible a rationalization of the (19)F NMR signals in groups according to the number of Si (n) and Ge (m) atoms in the nearest F(-) environment, F-Si(n)Ge(m) (where n+m=4). Thus, the calculated chemical shifts show that higher values are observed when the number of Ge atoms in the nearest F(-) environment increases.     

Reaction of Germanium Tetrachloride with Chloro(phenyl)silanes in the Presence of Aluminum Chloride

The effect of the quantity of aluminum chloride on the direction and depth of reaction of germanium tetrachloride with chloro(phenyl)silanes of the general formula Ph_nSiCl_4−n (n = 1 – 3) was studied to show that radical exchange between germanium and silicon is initiated only if the mixture contains no less than 2.5–5 wt % of aluminum chloride. With trichloro(phenyl)silane, the radical exchange is initiated at 5 wt % of aluminum chloride and results in exclusive formation of trichloro(phenyl)germane. The reactions of GeCl₄ with dichlorodiphenylsilane and chlorotriphenylsilane in the presence of 2.5–7.5 wt % of aluminum chloride give dichlorodiphenylgermane as the major product, and at AlCl₃ concentrations of above 10 wt % the major product becomes to be trichloro(phenyl)germane.__________Translated from Zhurnal Obshchei Khimii, Vol. 75, No. 6, 2005, pp. 920–922.Original Russian Text Copyright © 2005 by Zhun’, Sbitneva, Chernyshev.     

Rate coefficient measurements of hydrated electrons and hydroxyl radicals with chlorinated ethanes in aqueous solutions

Rate coefficients for the reactions of hydrated electrons and hydroxyl radicals with various chloroethanes were determined in aqueous solutions using pulse radiolysis techniques. The rate coefficients for the hydrated electron increase from 0.17 x 10(9) to 16.3 x 10(9) M(-1) s(-1) with increasing number of chlorine atoms from monochloroethane to hexachloroethane. Very little difference in rates is found between the isomers. Rate coefficients for the OH radicals range from 1 to 5 x 10(8) M(-1)s(-1) and have very little variation with the number of chlorine atoms except when no H atom is available on a carbon atom. The use of competition kinetics with low concentrations of SCN(-) as a reference is reviewed and suitable model simulations proposed. Possible explanations for the discrepancies between the previously published rate coefficients and the present values are offered.     

Über Polygermane. XIX [1]. Empirische Regelin Zur Abschätzung von 13C-NMR chemischen Verschiebungen in phenylieryten Polygermanen

On Polygermanes. XIX. Empirical rules for estimating ¹³C-NMR Chemical shifts in Phenylated polygermanes ¹³C-NMR chemical shifts are given for 85 phenyl groups independently bonded to Ge in 52 acyclic and 23 cyclic Ge compounds. ¹³C-NMR phenyl signals can be estimated from basic values for perorgano substituted homonuclear chains of Ge nd from increments for substitution at the Ge atoms.     

Rate constants and atmospheric lifetimes for the reactions of OH radicals and Cl atoms with haloalkanes

Rate constants for the reactions of Cl atoms and OH radicals with haloalkanes were measured using the relative rate technique. From these values the atmospheric lifetimes of the organics with respect to Cl atoms and OH radicals were calculated. Cl atoms were produced by the photolysis of chlorine gas, and photolysis of methyl nitrite was the source of OH radicals. The rate constants were measured for a series of brominated and chlorinated alkanes for which measurements have not yet been reported excepting: k(Cl + 1-chloropropane) and k(OH + 1-chloropropane, 2-chloropropane, and bromoethane). The organics studied were 1-chloropropane, 2-chloropropane, 1,3 dichloropropane, 2-chloro 2methylpropane, bromoethane, 1-bromopropane, 2-bromopropane, 1-bromobutane, 1-bromopentane, and 1-bromohexane. Cl atom reactions were measured at 298 K, the OH radical reactions were measured at temperatures between 298–308 K. © 1993 John Wiley & Sons, Inc.     

Mechanisms of formation of 8-oxoguanine due to reactions of one and two OH* radicals and the H2O2 molecule with guanine: A quantum computational study

Mechanisms of formation of the mutagenic product 8-oxoguanine (8OG) due to reactions of guanine with two separate OH* radicals and with H2O2 were investigated at the B3LYP/6-31G, B3LYP/6-311++G, and B3LYP/AUG-cc-pVDZ levels of theory. Single point energy calculations were carried out with the MP2/AUG-cc-pVDZ method employing the optimized geometries at the B3LYP/AUG-cc-pVDZ level. Solvent effect was treated using the PCM and IEF-PCM models. Reactions of two separate OH* radicals and H2O2 with the C2 position of 5-methylimidazole (5MI) were investigated taking 5MI as a model to study reactions at the C8 position of guanine. The addition reaction of an OH* radical at the C8 position of guanine is found to be nearly barrierless while the corresponding adduct is quite stable. The reaction of a second OH* radical at the C8 position of guanine leading to the formation of 8OG complexed with a water molecule can take place according to two different mechanisms, involving two steps each. According to one mechanism, at the first step, 8-hydroxyguanine (8OHG) complexed with a water molecule is formed ,while at the second step, 8OHG is tautomerized to 8OG. In the other mechanism, at the first step, an intermediate complexed (IC) with a water molecule is formed, the five-membered ring of which is open, while at the second step, the five-membered ring is closed and a hydrogen bonded complex of 8OG with a water molecule is formed. The reaction of H2O2 with guanine leading to the formation of 8OG complexed with a water molecule can also take place in accordance with two different mechanisms having two steps each. At the first step of one mechanism, H2O2 is dissociated into two OH* groups that react with guanine to form the same IC as that formed in the reaction with two separate OH* radicals, and the subsequent step of this mechanism is also the same as that of the reaction of guanine with two separate OH* radicals. At the first step of the other mechanism of the reaction of guanine with H2O2, the latter molecule is dissociated into a hydrogen atom and an OOH* group which become bonded to the N7 and C8 atoms of guanine, respectively. At the second step of this mechanism, the OOH* group is dissociated into an oxygen atom and an OH* group, the former becomes bonded to the C8 atom of guanine while the latter abstracts the H8 atom bonded to C8, thus producing 8OG complexed with a water molecule. Solvent effects of the aqueous medium on certain reaction barriers and released energies are appreciable. 5MI works as a satisfactory model for a qualitative study of the reactions of two separate OH* radicals or H2O2 occurring at the C8 position of guanine.     

Cleavage of the siloxane bond in poly(dialkylsiloxanes) by alkyl orthotitanates

Conclusions Linear polydialkylsiloxanes undergo cleavage upon heating with alkyl orthotitanates containing primary and secondary alkyl radicals, and the reactions are independent of the structure of radicals attached to the Si atoms, molecular weight, and the nature of the end groups. The factor which seems to determine the reactivity of polydialkysiloxanes with respect to cleavage at room temperature is the presence of CH end groups. The rate and degree of conversion in these reactions is decreased by increasing steric hindrance at the Si or Ti atoms.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 4, pp. 886–890, April, 1987.     

锗硅烯与CH3OH加成反应机理及区域选择性

采用密度泛函理论方法,在B3LYP/6-311++G(d, p)水平,研究了几种锗硅烯与CH₃OH的加成反应的微观机理和势能剖面,分析了锗硅烯中Si=Ge双键的极性对加成反应区域选择性的影响.研究结果表明,锗硅烯可分别与CH₃OH的单聚体或二聚体发生加成反应.所有加成反应均从初始亲核或亲电复合物的形成开始.母体锗硅烯H₂Si=GeH₂与CH₃OH二聚体的加成反应比其与CH₃OH单聚体的相应反应在动力学上更容易些,但在其它锗硅烯与CH₃OH的反应中情况则相反.用Ph或SiMe₃基团取代H₂Si=GeH₂中的H原子在动力学上使反应变得不利且SiMe₃基团的影响更显著.加成反应的区域选择性与锗硅烯中Si=Ge双键的极性以及Si-O(Ge-H)和Ge-O (Si-H)键的相对强弱都有关.     

硅苯和锗苯与2,3-二甲基丁二烯杂Diels-Alder反应的理论研究

采用密度泛函理论(DFT)方法在B3LYP/6-311G(d,p)水平上研究了硅苯和锗苯与2,3-二甲基丁二烯的两类杂Diels-Alder反应的微观机理、势能剖面、取代基效应和溶剂效应.计算结果表明,所研究反应均以协同非同步的方式进行,且C—Si或C—Ge键总是先于C—C键形成.在硅苯或锗苯分子作为杂亲二烯体的[2+4]反应中,endo进攻方式的非同步性比exo进攻稍大一些,而后者比前者一般要稍稍有利一些.在硅苯或锗苯分子作为杂二烯烃的[4+2]反应中,反应非同步性的大小与产物中不对称的亲二烯体上的取代基与硅或锗原子之间的相对位置有关,且在动力学上总是非同步性较大的反应更容易进行一些.硅或锗原子上的CCl3或NH2取代基在热力学和动力学上一般有利于反应的进行,而C(CH3)3取代基的影响则相反.[2+4]反应在热力学和动力学上均远比相应的[4+2]反应容易进行,这与实验完全一致.苯和甲醇溶剂对所研究反应的势能剖面影响较小.     

Ziegler-Natta 型催化剂NdCl3·3I-PtOH-AlEt3 两组分间的反应及其反应产物对双稀烃聚合的催化活性

The reactions between the two components of the rare-earth coordination catalyst, NdCl3.3i-PrOH and AlEt3, were studied. It was found that the activated solid product was a mixture containing alkylated neodymium compounds, but no alkyl chloride was formed during the reaction. The alkyls bounded to neodymium or to the bridge between neodymium and aluminium atoms are thermally less stable than those bonded to the aluminium atom. Two possible structures of alkylated neodymium compounds were postulated. The catalytic activity in the isoprene polymerization increases with the increase of degree of alkylation and decreases in the presence of alkyl aluminium chloride.     

On the mass spectra of some alkyl digermanium compounds

This paper reports the monoisotopic mass spectra of the compounds (CH₃)Ge? Ge(CH₃)₃,(C₂H₅)₃Ge? Ge(C₂H₅)₃ and (CH₃)₃Ge? Ge(C₂H₅)₃. With the aid of metastable ion transitons and appearance potentials the fragmentation patterns can be given. The dominant reactions are explained in terms of the valence of the metal atom. According to the valence rule the possibility of forming an ion in which two germanium atoms are bonded to five other groups (alkyl or hydrogen) determines greatly the spectra, while successive elimination of the methyl groups appears to be difficult and elimination of the ethyl groups is a predominant process.     

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces

We present a detailed analysis of the interactions between growth precursors, SiH3 radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si2H6) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH2 species) and gas-phase silane (SiH4). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a "fast diffusing state," i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH3 radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH3 radicals is in a "diffusive state." Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.