Solid-state 29Si, 113Cd, 119Sn, and 31P NMR studies of II-IV-P2 semiconductors

Solid-state ²⁹Si, ¹¹³Cd, ¹¹⁹Sn, and ³¹P MAS NMR spectra are reported on a series of II-IV-P₂ compounds. In favorable cases (e.g., high degree of crystallinity, low concentration of unpaired electrons), well-defined spectra, with sharp lines for each specific nearest-neighbor configuration, are observed; in such cases, expected J coupling patterns are also seen. High-resolution solid-state NMR studies of this type provide useful information on structure (disorder), doping, and electron-mediated coupling in semiconductor systems.     

激光照射中Z薄靶等离子体状态的计算-激光等离子体相互作用的理论模拟(Ⅰ)

本文叙述用一维非平衡辐射流体力学激光打靶程序模拟计算高功率密度(~10¹³W/cm²)激光照射中Z介质薄靶形成的等离子体状态。考虑的物理过程有轫致、光电离、电子碰撞电离及它们的逆过程,Compton散射过程等。Compton散射采用Fokker-Planck近似;电子和离子热传导采用限流扩散近拟;光子方程采用多群限流扩散近似;用平均原子模型计算布居数。激光的吸收主要考虑逆轫致吸收。用功率密度分别为5×10¹³W/cm²和1×10¹⁴W/cm²,波长0.53μm,脉宽450ps的激光从两面和单面打se薄靶,模拟计算结果与国外的实验结果^[1]一致。     

Band structures of Se and Se

Band structures of ⁷⁶Se and ⁷⁸Se have been studied with the ^74,76Ge(, 2nγ)^76,78Se reactions by using a variety of in-beam γ-techniques : γ-ray singles spectra, γ-ray excitation functions, γ-γ-t coincidences, γ-ray angular distributions and γ-ray linear polarizations.

Spins and parities have been assigned uniquely for many new levels in ⁷⁶Se and ⁷⁸Se and four bands have been identified in both nuclei: (i) the ground-state band, (ii) a positive-parity ΔJ = 1 band built on the second 2⁺ state (γ-vibrational band), (iii) a negative-parity Δ J = 2 band built on the 3⁻ state (octupole band) and (iv) a ΔJ = 2 band built on the high-lying J = 4 state. In addition, the second 8 ⁺ and 10⁺ states, which are possibly the lowest members of a band, have been found in both nuclei.

Systematics of the band structures obtained are discussed. Level energies of the band members and B(E2) ratios for some of the inter-band transitions between γ- and ground-state bands have been calculated with the proton-neutron interacting boson model IBM-2 and a reasonable agreement with the present data has been obtained.     

Identification of the Li ground state

The proton-stripping reaction from a ¹¹Be radioactive beam incident on a beryllium target demonstrates that only (7±3)% of the ⁹Li residues in the reaction are in coincidence with the 2.7 MeV γ-ray corresponding to the ⁹Li first excited state. This implies that the previously observed low-energy neutrons from the decay of the unbound nucleus ¹⁰Li represent a direct l=0 transition to the ⁹Li ground state. Consequently, neutron-unbound ¹⁰Li is proven to have the same parity inversion as occurs in the case of ¹¹Be with a  intruder state below the natural parity state.     

Investigation of a channeling high-intensity laser beam inunderdense plasmas

The interaction of an intense short pulse laser (>5×10 ¹⁸ Wcm^-2) with underdense plasma was extensively studied. The beam is found to be highly susceptible to the forward Raman scattering instability. At sufficiently high growth rates, this can lead to wavebreaking with the resultant production of a high flux of accelerated electrons (>10¹¹ for E>2 MeV). Some electrons are found to be accelerated well above the dephasing energy, up to 94 MeV. Self-scattered images intimate the presence of high-intensity channels that extend more than 3.5 mm or 12 Rayleigh lengths. These filaments do not follow the axis of laser propagation, but are seen to be emitted within an f4 cone centered around this axis. Spectra of the self-scattered light show that the main contribution of the scattering is not from light captured within these filaments. But there is evidence for self-phase modulation from effects such as ionization and relativistic self-focusing. However, no clear correlation is observed between channel length and the number or energies of accelerated electrons. Evidence for high intensities within the channels is given by small-angle Thomson scattering of the plasma wave generated therein, with this method, the intensity is found to be of the order of 10¹⁸ Wcm^-2 greater than 12 Rayleigh lengths from focus     

Surface tension and density measurements for indium and uranium using a sessile-drop apparatus with glow discharge cleaning

The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield _mp = 7.05 × 10³kg/m³, d/dT = −0.776 kg/m³·°C, and γ_mp = 0.568 N/m, dγ/dT = −9.45 × 10⁻⁵ N/m·°C. The results for uranium at the melting point are _mp = 17.47 × 10³ kg/m³ and γ_mp = 1.653 N/m.     

Optical pumping of the 2p3sP0 State of Ne (I = 3/2): g factor and metastability exchange cross section

A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p⁵ 3s³P₀ (F = 3/2) state of ²¹Ne. A magnetic resonance experiment leads to the measurement of the g factor g (³P₀) = 3.027 (8) × 10⁻⁴ to be compared with the theoretical prediction (3.025(6) × 10⁻⁴). One obtains also the metastability exchange cross section σ(³P₀) = 18.4 ± 4 Ų for collisions between metastable (³P₀) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.     

The 3-D electrostatic potential surrounding a square array of surface charges

Simple scaling laws have been derived which relate the 3-D potential to the inter-surfacestate spacing, the field-plate spacing, the dielectric constants of both insulators bordering the interface, and the dimensions x,y,z. This 3-D potential, obtained by using a pair of images and Neumann boundary conditions, contains the usual 1-D potential as the zeroth harmonic in a Fourier series. The 3-D and 1-D potentials give equivalent densities of conduction electrons in an accumulation layer only for a surface state density σ < 3 × 10¹¹/cm². For higher σ, the 1-D potential seriously underestimates the amount of space charge possible. There is a low saddle point in the 3-D potential configuration which allows surface conduction electrons to transport laterally in the presence of a transverse field.     

采用相对论多组态Dirac-Hartree-Fock方法对Mg原子同位素位移的理论研究

利用相对论多组态Dirac-Hartree-Fock方法研究了Mg原子基态到低激发态~1S_0-~1P_1和~1S_0-~3P_1两条跃迁谱线的同位素位移参数,包括正常质量位移系数,特殊质量位移系数和场位移因子,并计算了~(24)Mg,~(25)Mg和~(26)Mg三个稳定同位素的同位素位移.在计算中采用了一种受限制的双电子激发模式,并将同位素位移计算结果与已有的实验测量和理论计算结果进行了对比.结果表明,用本文的研究方法计算的Mg原子同位素位移与其他理论结果和实验测量值十分符合.本文的计算结果可以为~(20-40)Mg同位素位移测量实验提供必要的参考,所用的计算方法也可以应用到其他类Mg体系(核外电子数等于12的离子)等多电子离子的光谱结构计算和同位素位移的研究中.     

Importance of high local cathode spot pressure on the attachment ofthermal arcs on cold cathodes

The importance of having high local cathode spot pressures for the self-sustaining operation of a thermal arc plasma on a cold cathode is theoretically investigated. Applying a cathode sheath model to a Cu cathode, it is shown that cathode spot plasma pressures ranging 7.4-9.2 atm and 34.2-50 atm for electron temperatures of ~1 eV are needed to account for current densities of 10⁹ and 10¹⁰ A·m^-2, respectively. The study of the different contributions from the ions, the emission electrons, and the back-diffusing plasma electrons to the total current and heat transfer to the cathode spot has allowed us to show the following. 1) Due to the high metallic plasma densities, a strong heating of the cathode occurs and an important surface electric field is established at the cathode surface causing strong thermo-field emission of electrons. 2) Due to the presence of a high density of ions in the cathode vicinity, an important fraction of the total current is carried by the ions and the electron emission is enhanced. 3) The total current is only slightly reduced by the presence of back-diffusing plasma electrons in the cathode sheath. For a current density j_tot=10⁹ A·m^-2 , the current to the cathode surface is mainly transported by the ions (76-91% of j_tot while for a current density j_tot = 10¹⁰ A·m^-2, the thermo-field electrons become the main current carriers (61-72% of j_tot). It is shown that the cathode spot plasma parameters are those of a high pressure metallic gas where deviations from the ideal gas law and important lowering of the ionization potentials are observed     

反应物NO的振动激发对反应C(3P)+NO(X2Π)→CO(X1Σ+)+N(2D)立体动力学性质的影响

采用准经典轨线方法研究碰撞能为0.23 eV时,反应物分子NO在不同初始振动态(v=0～3)下发生在两个电子态(2A″和2A′)势能面上反应C(3P)+NO(X2Π)→CO(X1Σ+)+N(2D)的立体动力学性质.计算反应产物的转动角动量矢量分布(P(θr)和P(?r))以及微分散射截面(P00(ωt),(P)20(ω...     

Isomerism in Ag and non-yrast levels in Pd and Rh, studied in β decay

The β decay of ⁹⁶Ag (Z=47,N=49) was investigated by measuring positrons, X rays as well as β-delayed protons and γ rays. The γ radiation was studied by means of germanium detectors and a NaI total-absorption spectrometer. Two β-decaying isomers in ⁹⁶Ag were established with half-lives of 4.40(6) and 6.9(6) s and tentative spin–parity assignments of (8⁺) and (2⁺), respectively. For both isomers, the intensities of β transitions to low-lying levels of ⁹⁶Pd (Z=46,N=50) and β-delayed proton decays to levels in ⁹⁵Rh (Z=45,N=50) were measured. Several new ⁹⁶Pd levels were firmly established. The level energies, their γ decays and the Gamow–Teller decay of ⁹⁶Ag are compared to shell-model predictions. A new low-lying level in ⁹⁵Rh was found at 680 keV excitation energy. Through a comparison with low-lying states of N=50 isotones, this level is interpreted as the first excited 7/2⁺ state built on the proton 9/2⁺ ground state. The assignments of further excited states in ⁹⁵Rh are discussed.     

Anomalous behavior of conductivity of the confined Q1D electron system over liquid helium

Conductivity of electrons in a quasi-one-dimensional (Q1D) system over liquid helium in narrow channels with the parabolic profile of the potential well has been investigated at temperature T, from 0.4 to 1.8 K, for different driving electric fields and radius of channel curvature. The interval of linear electron densities varied from 2.18×10³ up to 1.7×10⁶ cm⁻¹.

The inverse mobility (1/μ_eff) in the electron-ripplon scattering region at the high linear densities of charges in the channel increases with temperature decreasing. This anomalous behavior of the electron transport in the low-temperature region has been explained by either the electron ordering or the polaronic effects in confined conducting channels. The nonlinear behavior of the electron velocity as a function of a driving electric field is supposed to be due to Breg–Cherenkov radiation of the ripplons. The radiation occurred if the velocity of electrons in the channel approaches to the critical value.     

Electron spectroscopy observation of the 1s2s2p(S) state in atomic fluorine by means of electron impact excitation of the hf molecule

The energy of the 1s2s²2p⁶²S) core excited state in atomic fluorine is determined by studying a satellite in the electron beam excited KVV Auger electron spectrum of HF. The satellite is assigned to an atomic autoionization transition 1s2(²2p⁶(²S) → 1ss²2p⁴ (¹D). The energy of the 1s2s²2P⁶(²s) initial state has been determined to be 676.5 eV. Transitions to the 1s²2s²2p⁴³p(³P)and 1s²2s²2P⁴(¹S) states are also observed. The intensity for these transitions is very low.     

Prolate and oblate 10 isomers in Sm78 and Gd78

The N = 78 isotones ¹⁴⁰Sm and ¹⁴²Gd have been studied with -particle- and HI-induced reactions. In both nuclei two close-lying 10⁺ isomers at 3.2 MeV have been established, and from the feeding E2 cascades they are characterized as the prolate and the oblate excitations. A third E2 cascade feeding into the ¹⁴²Gd 8⁺ state is interpreted as the continuation of the collective ground state sequence that might assume the properties of a perfect deformed rotor for spins above 10.     

Si CP/MAS NMR of phosphorus-bearing organosilicon compounds

While liquid-state ²⁹Si NMR of phosphorus-bearing organosilicon compounds with more than one phosphorus per molecule can take advantage of the presence of J-coupling ⁿJ(³¹P²⁹Si) for purposes of structural assignment from J-coupling patterns, conventional ²⁹Si CP/MAS spectra of such molecular solids do not reveal structural details in a straightforward manner. For such compounds it is necessary to obtain ²⁹Si CP/MAS spectra under conditions of simultaneous ¹H- and ³¹P-high power decoupling in order to derive reliable ²⁹Si chemical shift information. ²⁹Si CP/MAS NMR spectra, obtained with and without ³¹P high power decoupling during the acquisition time, of several organosilicon compounds containing Si_xP_y (x = 1 −10, y = 1 −10) moieties are reported.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Effects of Prandtl number in two-dimensional turbulent convection

We report a numerical study of the Prandtl-number(Pr) effects in two-dimensional turbulent Rayleigh-Benard convection.The simulations were conducted in a square box over the Pr range from 0.25 to 100 and over the Rayleigh number(Ra) range from 107 to 1010.We find that both the strength and the stability of the large-scale flow decrease with the increasing of Pr,and the flow pattern becomes plume-dominated at high Pr.The evolution in flow pattern is quantified by the Reynolds number(Re),with the Ra and the Pr scaling exponents varying from 0.54 to 0.67 and-0.87 to-0.93,respectively.It is further found that the non-dimensional heat flux at small Ra diverges strongly for different Pr,but their difference becomes marginal as Ra increases.For the thermal boundary layer,the spatially averaged thicknesses for all the Pr numbers can be described by δ_θ～Ra~(-0.30) approximately,but the local values vary a lot for different Pr,which become more uniform with Pr increasing.     

高能电子辐射下聚四氟乙烯深层充电特性

介质深层充放电现象是诱发航天器异常故障的重要因素之一.分析了高能电子辐射下介质内部电荷沉积、能量沉积特性和电导特性,考虑了真空与介质界面电荷对电场分布的影响,建立了介质二维深层充电的物理模型,并基于有限元方法实现了数值计算.计算了高能电子辐射下聚四氟乙烯的深层充电特性.结果表明:真空环境下,介质的表面存在较弱的反向电场,随着介质深度增大,电场减小至零,随后逐渐增大,最大值出现在靠近接地附近,但在接地点,电场存在小幅降低.分析了不同辐射时间下(1 h,1 d,10 d和30 d),介质内部最大电位和最大电场的时空演变特性.随着辐射时间的增加,最大电位由-128V增加至-7.9×104V,最大电场由2.83×105V·m-1增加至1.76×108V·m-1.讨论了入射电子束流密度对最大电场的影响,典型空间电子环境(1×10-10A·m-2)下,电子辐照10 d时,介质内部最大电场为2.95×106V·m-1.而恶劣空间电子环境(2×10-8A·m-2)下,电子辐射42 h,介质内部最大电场即达到108V·m-1,超过材料击穿阈值(约为108V·m-1),极易发生放电现象.该物理模型和数值方法可以作为航天器复杂部件多维电场仿真的研究基础.     

Structure determination, magnetic and optical properties of a new chromium(II) thioantimonate, [Cr((NH2CH2CH2)3N)]Sb4S7

The chromium(II) antimony(III) sulphide, [Cr((NH₂CH₂CH₂)₃N)]Sb₄S₇, was synthesised under solvothermal conditions from the reaction of Sb₂S₃, Cr and S dissolved in tris(2-aminoethyl)amine (tren) at 438 K. The products were characterised by single-crystal X-ray diffraction, elemental analysis, SQUID magnetometry and diffuse reflectance spectroscopy. The compound crystallises in the monoclinic space group P2₁/n with a=7.9756(7), b=10.5191(9), c=25.880(2) Å and β=90.864(5)°. Alternating SbS₃³⁻ trigonal pyramids and Sb₃S₆³⁻ semi-cubes generate Sb₄S₇²⁻ chains which are directly bonded to Cr(tren)²⁺ pendant units. The effective magnetic moment of 4.94(6)μ_B shows a negligible orbital contribution, in agreement with expectations for Cr(II):d⁴ in a ⁵A ground state. The measured band gap of 2.14(3) eV is consistent with a correlation between optical band gap and framework density that is established from analysis of a wide range of antimony sulphides.