A plastic scintillator film for an electron beam-excitation assisted optical microscope

Optical Review - A plastic scintillator film for use in an electron beam excitation-assisted (EXA) optical microscope is characterized. The thin film scatters an incident electron beam weakly and...     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Periodic structures induced by scattered light in a photosensitive film on a dielectric plane-parallel substrate

Periodic structures appearing in a thin AgCl-Ag film on a plane-parallel substrate irradiated with a normally incident, focused, linearly polarized Gaussian laser beam λ=633 nm) with a waist spot size of about 0.01 mm have been studied. The structures are formed in the beam spot and its nearest vicinity (with a radius of up to 0.2 mm) as a result of the interference of the incident beam and the waveguide TE modes excited due to the Rayleigh scattering in the film. In the vicinity of the waist spot, the periodic structures develop under the action of a coherent recurrent scattering from back side of the substrate. In addition, periodic structures of ring symmetry have been revealed far (up to 10 mm) from the irradiated spot. It is demonstrated that these structures are due to the interference of radiation scattered from the film and back side of the substrate and reflected from the two boundaries. Interference models are proposed that provide for a good agreement of the interference period, calculated as a function of the distance from the beam center, with the experimental values.     

Transmissivity and reflectivity of spatially dispersive thin films

We calculate the transmission and reflection coefficients for electromagnetic radiation incident normally on the surfaces of thin, spatially dispersive, absorbing, dielectric films. Results are obtained for four models of spatially dispersive dielectrics and for the case in which spatial dispersion is neglected. For each model the effects of spatial dispersion are to introduce additional fine structure into the transmission and reflection coefficients, regarded either as functions of frequency or of the thickness of the film. In addition, the results reveal an interleaving between the maxima and minima of the spectra for different models, which may provide a basis for an experimental discrimination between different phenomenological models for the nonlocal dielectric constant of a spatially dispersive dielectric medium.     

Mapping electromagnetic fields near a subwavelength hole

We study, both experimentally and theoretically, the scattering of electromagnetic waves by a subwavelength hole fabricated in a thin metallic film. We employ the scanning near-field optical microscopy in order to reconstruct experimentally the full three-dimensional structure of the electromagnetic fields in the vicinity of the hole. We observe an interference of all excited waves with an incident laser beam which allows us to gain the information about the wave phases. Along with the well-known surface plasmon polaritons propagating primarily in the direction of the incident beam polarization, we observe the free-space radiation diffracted by the hole. We compare the experimental results with the fields of pure electric and pure magnetic dipoles as well as with direct numerical simulations. We confirm that a single hole in a thin metallic film excited at the normal incidence manifests itself as an effective magnetic dipole in the visible spectral range.     

Two-dimensional light diffraction from thin opal films

This paper reports on experimental and theoretical investigations of light diffraction from thin films of synthetic opal. The diffraction patterns have been studied visually and recorded in different scattering geometries with the films illuminated with white unpolarized light. The diffraction pattern obtained with the film illuminated with a light beam along the [111] axis, which is normal to the film surface, has C ₆ symmetry and consists of six strong reflections arranged symmetrically with respect to the incident beam. This pattern becomes substantially more complicated when the film is illuminated by white light at an arbitrary angle to the [111] axis. An experimental study of the spectral response and angular relations of the diffraction patterns has established a fairly full pattern of transformation of diffraction reflections obtained under variation of the angle of light incidence on an opal film. The remarkably good matching of experimental and calculated data provides compelling evidence for light diffraction from thin opal films being two-dimensional.     

Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films

A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve （XRC） of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum （FWHM） of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction.     

VO_2薄膜Vis-NIR及NIR-MIR椭圆偏振光谱分析

采用射频磁控溅射在石英玻璃基底上反应溅射制备单斜相(M相)VO_2薄膜.利用V-VASE和IR-VASE椭圆偏振仪及变温附件分别在0.5—3.5 eV(350—2500 nm)和0.083—0.87 eV(1400—15000 nm)入射光能量范围内对相变前后的VO_2薄膜进行光谱测试,运用逐点拟合的方式,并通过薄膜的吸收峰的特征,在0.5—3.5 eV范围内添加3个Lorentz谐振子色散模型和0.083—0.87 eV范围内添加4个Gaussion振子模型对低温态半导体态的薄膜椭偏参数进行拟合,再对高温金属态的薄膜添加7个Lorentz谐振子色散模型对进行椭偏参数的拟合,得到了较为理想的拟合结果.结果发现:半导体态的VO_2薄膜的折射率在近红外-中红外基本保持在最大值3.27不变,且消光系数k在此波段接近于零,这是由于半导体态薄膜在可见光-近红外光范围内的吸收主要是自由载流子吸收,而半导体态薄膜的d//轨道内的电子态密度较小.高温金属态的VO_2薄膜的折射率n在近红外-中红外波段具有明显的增大趋势,且在入射光能量为0.45 eV时大于半导体态的折射率;消光系数k在近红外波段迅速增大,原因是在0.5—1.62 eV范围内,能带内的自由载流子浓度增加及电子在V_(3d)能带内发生带内的跃迁吸收,使k值迅速增加;当能量小于0.5 eV时k值变化平缓,是由于薄膜内自由载流子浓度和电子跃迁率趋于稳定所致.     

Surface plasmon polariton-based optical beam profiler

We describe a surface plasmon polariton- (SPP-) based device for measuring the intensity distribution of strongly focused light beams. A gold thin film configured as a sharp step is positioned in the focal region of a light beam, converting light into SPPs. The SPPs emit directional leakage radiation into the glass substrate beneath the thin film. The intensity of the leakage radiation is proportional to the intensity of the incident local light at the position of the step, allowing us to reconstruct the optical field profile by scanning the thin film's edge through the focal region.     

色散SiO2/TiO2薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性

用特征矩阵法研究了由正常色散SiO₂/TiO₂薄膜组成的Fibonacci序列一维光子晶体在可见光波段的传输特性,并与无色散时的传输特性做了对比。结果表明,随序列项数的增加,相应的前一序列的透射谱中透射率较低的凹带逐渐变成禁带,禁带数增加;初始介质是低折射率的SiO₂薄膜时比高折射率的TiO₂薄膜时各序列的透射谱中的禁带数多,各禁带的宽度和中心波长基本相同;在总厚度一定的条件下,随SiO₂薄膜的厚度增大（TiO₂薄膜的厚度减小）,禁带的宽度减小,禁带的中心波长基本不变;随入射角增大,禁带的中心波长向短波方向移动,禁带宽度变小。在其它相同条件下,无色散时的最宽禁带和最宽禁带的中心波长比有色散时的最宽禁带和最宽禁带的中心波长都有增加。     

Photoinduced transformations in a thin-film waveguide AgCl-Ag composition under a green (532 nm) laser beam

A linearly polarized (E ₀) laser beam (λ = 532 nm) causes photoinduced transformations in an AgCl-Ag composition consisting of a thin waveguide AgCl film on glass covered by a layer of Ag nanoparticles. Before the illumination the sample exhibits an absorption band due to localized plasmons in nanoparticles. The illumination excites plasmons and leads to scattering of waveguide TE₀ modes. The interference of modes with the incident light beam leads to the development of a periodic structure, the lines of which are formed by Ag particles and directed along E ₀. The measured structure period coincides with the result of calculation based on solving the dispersion equation for the TE₀-mode. Measurement of absorption in the E ‖ E ₀ polarization reveals dichroism and a spectral hole (at λ ≈ nm). It is shown that the structures formed remain on the substrate after removing AgCl in a fixing agent. The dichroism value and dispersion change after fixing. The character of dichroism prior to fixing is recovered after depositing an AgCl layer (with the parameters retained) on the fixed film.     

An Iterative Formula for the Reflection Coefficient of Multi-layer Thin Film and Its Application in the Design of Optical All Pass Filter

In this paper, an iterative formula for the reflection coefficient of the multi-layer thin film is deduced and the design of multi-layer thin film gires-tournois interferometer optical all pass filter(GTI-OAPF) is discussed. The group delay τm ranges from 0.06 to 460 ps and the bandwidth Δω ranges from 0.068 to 0.0000079 (1015 rad/s). By changing the incident angle θ0, the multi-channel dispersion compensation may be achieved.     

粗糙体目标激光束散射场的互相关函数统计特征

依据高斯波束体目标散射特征,研究了粗糙体目标高斯波束散射场量的互相关函数统计特征。在激光波束入射下,通过数值方法讨论圆球类目标、不同半径、不同材料、不同入射波束极化等条件下,散射场量的互相关函数随散射角变化情况。数值计算结果表明:金属薄膜材料比非金属镀漆材料互相关函数量值要大,金属材料球体目标的后向散射互相关函数值较大,而非金属镀漆材料球体互相关函数值较小。材料表面的粗糙度和目标尺寸对互相关函数影响较大,而入射光的极化方式对相关函数有影响但影响较小。     

反射干涉光谱法测量固体薄膜的光学常数和厚度

本文报道一种简单的方法,从平原介质薄膜的反射干涉光谱来计算薄膜的光学常数和厚度。当一束光照射在基板上的介质膜上时,由于膜上下界面反射光的相干,会使反射光谱的曲线有一定的波动。我们对反射相干光谱进行理论分析,给出计算公式,从测量曲线中的实验值得出薄膜的光学常数ｎ、ｋ以及厚度等参数。此种方法简单可行,而且易于编程处理。     

Periodic arrays of submicron Si and Ni dots on SiO2 fabricated using linearly polarized Nd:YAG pulsed laser

Periodic arrays of submicron Si and Ni dots were fabricated by only irradiating a linearly polarized Nd:YAG pulsed laser beam to Si and Ni thin films deposited on silicon dioxide (SiO₂) film. The interference between an incident beam and a scattered surface wave leads to the spatial periodicity of beam energy density distribution on the surface of the irradiated samples. A thin film was melted using a laser beam, and the molten film was split and condensed owing to its surface tensile according to the periodic energy density distribution. Then, the fine lines (line and space structure) were formed periodically. After the formation of fine lines, the sample was rotated by 90°, and the laser beam was irradiated. The periodic energy density distribution was generated on the fine lines, and the lines were split and condensed. Eventually, the periodically aligned submicron dots were fabricated on the SiO₂ film. PACS 79.20.Ds; 42.62.-b; 81.40.-z     

Simulation analysis of the aluminum thin film thickness measurement by using low energy electron beam

This paper indicates a simulation analysis for estimating the aluminum (Al) thin film thickness measurements by using the low energy electron beam. In order to calculate the Al thickness estimation, the energy of the incident electron beams was varied from 10 to 30 keV, while the thickness of the Al film was varied between 6 and 14 μm. From the simulation results it was found that electron transmittance fraction in 14 μm sample is about nine orders of magnitude more than 6 μm sample at the same incident electron beam energy. Simulation results show that maximum transmitted electrons versus Al layer thickness has a parabolic relation and by using the obtained equation, it is possible to estimate unknown thickness of the thin film Al layer. All calculations here were done by CASINO numerical simulation package.     

An Iterative Formula for the Reflection Coefficient of Multi-layer Thin Film and Its Application in the Design of Optical All Pass Filter

In this paper, an iterative formula for the reflection coefficient of the multi-layer thin film is deduced and the design of multi-layer thin film gires-tournois interferometer optical all pass filter(GTI-OAPF) is discussed. The group delay τm ranges from 0. 06 to 460 ps and the bandwidth △ω ranges from 0.068 to 0.0000079 (1015 rad/s). By changing the incident angle θ0, the multi-channel dispersion compensation may be achieved.     

不同薄膜材料对α束流性能影响的模拟研究

由于回旋加速器引出的束流能量固定,为了满足不同实验对束流能量的不同需求,需要对束流的能量进行调节.为此,研究了利用薄膜材料对束流能量进行改变的可行性.用SRIM程序分析计算了30 MeVα束流(回旋加速器引出能量)穿过金刚石、铝和铜材料后的射程,确定了材料厚度与所需能量之间的关系.利用G4Beamline程序计算了束流...     

自适应模拟退火遗传算法在薄膜厚度及光学常数反演中的应用

准确的测量薄膜的厚度和光学常数,在薄膜的制备、研究和应用中都是十分重要的。借助Cauchy色散模型,通过薄膜透过率测量曲线,用改进的自适应模拟退火遗传算法对透过率曲线进行全光谱拟合,从而反演得到薄膜的厚度和光学常数。对由电子束蒸发制备的TiO2单层膜和SiO2/TiO2双层膜的厚度和光学常数进行了测量计算。实验结果表明,计算得到的光学参数与实测结果相一致,厚度误差小于2nm,在560nm波长处折射率误差小于0.03。