超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展，其中包括扭快光电材料的特性、高速光电器件的基本原理，着重介绍了若干主要的用快光电测量技术．     

Growth of epitaxial thin Pd(1 1 1) films on Pt(1 1 1) and oxygen-terminated FeO(1 1 1) surfaces

Thin Pd films (1-10 monolayers, ML) were deposited at 35 K on a Pt(1 1 1) single crystal and on an oxygen-terminated FeO(1 1 1) monolayer supported on Pt(1 1 1). Low energy electron diffraction, Auger electron spectroscopy, and Kr and CO temperature programmed desorption techniques were used to investigate the annealing induced changes in the film surface morphology. For growth on Pt(1 1 1), the films order upon annealing to 500 K and form epitaxial Pd(1 1 1). Further annealing above 900 K results in Pd diffusion into the Pt(1 1 1) bulk and Pt-Pd alloy formation. Chemisorption of CO shows that even the first ordered monolayer of Pd on Pt(1 1 1) has adsorption properties identical to bulk Pd(1 1 1). Similar experiments conducted on FeO(1 1 1) indicate that 500 K annealing of a 10 ML thick Pd deposit also yields ordered Pd(1 1 1). In contrast, annealing of 1 and 3 ML thick Pd films did not result in formation of continuous Pd(1 1 1). We speculate that for these thinner films Pd diffuses underneath the FeO(1 1 1).     

杨木和桉木的二维相关红外光谱

采用红外光谱结合二维相关分析技术,对两种速生阔叶树杨木和桉木进行了快速鉴别研究。结果表明,二者在一维红外光谱图上差别不明显,而二维相关红外谱图具有较大的差别。在800～1 500 cm-1波段范围内,二者的同步二维相关光谱图还比较类似,都在1 221,954,879 cm-1处出现较强的自动峰,在1 470, 1 150,1 1 05, 1 008 cm-1处出现微弱的自动峰。在1 500～1 800 cm-1波段范围内,杨木在1 655 cm-1处有一个非常强的自动峰,在1 600 cm-1附近有一个很弱的自动峰,二者形成了一对正的交叉峰;桉木在1 725,1 650和1 600 cm-1处均出现较强的自动峰,并形成一个较强的3×3峰组。除此之外,桉木还在1 580和1 510 cm-1出现2个弱的自动峰,其中1 580 cm-1和其余4个自动峰形成了较弱的负交叉峰,1 510 cm-1和其他3个自动峰形成正的交叉峰。这说明,桉木在1 500～1 800 cm-1波段对应的官能团比杨木相应的官能团对热微扰更为敏感,杨木和桉木的二维相关红外光谱差别,快速鉴别这两种木材的。     

Adsorption of hydrogen and carbon monoxide on Rh(1 1 1)/V surface alloys

A detailed study of the interaction of hydrogen and carbon monoxide with two different Rh(1 1 1)/V surface alloys (1/3 monolayer of V in the second atomic layer or 1/3 monolayer of V in form of islands on the surface) is presented in comparison to the clean Rh(1 1 1) surface. For hydrogen a decrease in the sticking coefficient is found for both alloy surfaces. The sticking coefficient of H₂ as a function of the translational energy is similar to the Rh(1 1 1) surface, showing a direct activated adsorption mechanism. For low translational energies hydrogen adsorption is dominated by dynamical steering on Rh(1 1 1) and by a precursor mechanism on the Rh(1 1 1)/V subsurface alloy. The H₂ TPD desorption peaks are shifted to lower temperatures on the alloy surfaces, caused by the downshift of the metal d-band due to V alloying. On all three surfaces the saturation coverage of hydrogen was measured, giving 1.2, 1.0 and 0.8 monolayer for Rh(1 1 1), the Rh(1 1 1)/V subsurface alloy and for the Rh(1 1 1)/V islands, respectively. For CO the sticking coefficients and the saturation coverages are basically the same on the Rh(1 1 1) and the alloy surfaces. There is an extrinsic precursor on the ordered CO (√3×√3) phase on the Rh(1 1 1) surface, but there is no evidence for such a precursor on the Rh(1 1 1)/V subsurface alloy. On the Rh(1 1 1)/V islands surface, the extrinsic precursor exists on the Rh(1 1 1) surface between the V islands. Apparently this precursor is only stable on the ordered CO layer on Rh(1 1 1).     

Electrodeposition of epitaxial nickel films on GaAs

The structural and magnetic properties of Ni films grown by electrodeposition from simple sulfate solutions directly onto the (0 0 1) and (0 1 1) surfaces of n-GaAs have been studied. In-plane X-ray diffraction has been used to show that Ni grows on (0 0 1) GaAs with two different preferred epitaxial relationships: (1) perpendicular to plane (0 0 1)_Ni(0 0 1)_GaAs and preferred orientation in-plane [1 0 0]_Ni[1 1 0]_GaAs and (2) perpendicular to plane (0 1 1)_Ni(0 0 1)_GaAs and preferred orientation in-plane [1 1 1]_Ni[1 1 0]_GaAs. Nickel films grown on (0 1 1) n-GaAs show only a single preferred growth relationship: perpendicular to plane (1 1 1)_Ni(0 1 1)_GaAs and in-plane [1 1 0]_Ni[1 1 0]_GaAs. The magnetic properties were strongly dependent on the substrate orientation. The films grown on GaAs (0 0 1) showed a small but definite four-fold magnetic anisotropy in plane with the highest remanence being found along the GaAs [1 0 0] direction. In contrast, the Ni films grown on the (0 1 1) GaAs showed a pronounced uniaxial anisotropy with an anisotropy field of approximately 500 Oe.     

Computation of the electric and magnetic fields induced in a plasmacreated by ionization lasting a finite interval of time

S.C. Wilks et al. (1988) showed that when an infinite expanse of gas, carrying a linearly polarized electromagnetic wave, is instantly ionized, the initial wave is frequency upshifted. This phenomenon of frequency upconversion through flash ionization gives rise to steady-state transmitted and reflected electromagnetic waves and to a time-independent magnetic field. The case in which the final state of ionization is achieved not instantly but in a finite turn-on time, 0⩽t⩽t 0, which is followed by the steady state, is studied. It is shown that the electric field is obtained from the one-dimensional Helmholtz equation, d²F(t)/dt² +ω₀²g(t)F( t)=0, if electrons are born at rest when they are created during ionization. As a result, the instantaneous frequency of the upshifted radiation is ω(t)=√g(t). The electric field can be solved exactly for specific choices of g(t). It is solved using WKB approximations for arbitrary g(t). The magnetic field is then found by integrating Faraday's law. It is found that the steady-state electric field amplitude depends on the steady-state value o f g(t) but does not depend on the ionization time t₀. Conversely, the static magnetic field amplitude decreases with increasing turn-on time     

InCl分子C1Π1态光谱研究

采用激光诱导荧光技术对InCl分子C1Π1→X1Σ+荧光光谱进行了分析和归属, 在发射谱中探测到ν′=1向下的跃迁, 证明C态预离解只能发生在ν′=1之上。 并对C1Π1→X1Σ+的荧光衰变曲线进行了观测, 得到InCl分子C1Π1(ν′=1)态的无碰撞辐射寿命τ0≈11 ns及电子跃迁矩|Re|2≈5.95D2。     

GeS分子基态和低激发态的势能曲线与光谱性质

本文以aug-cc-pv5Z为基组, 采用考虑Davidson修正的多参考组态相互作用方法(MRCI+Q)得到了GeS分子基态(X¹Σ⁺)和5个低激发态(1¹Σ, 1¹Δ, A¹Π, 1⁵Σ⁺, 2⁵Σ⁺)的势能曲线. 计算结果表明: 2⁵Σ⁺态为排斥态, 其余5个态为束缚态; 6个态有着共同的离解通道, 离解极限均为Ge(³P)+S(³P). 利用计算得到的势能曲线得了X¹Σ⁺, 1¹Σ^-, 1¹Δ, A¹Π和1⁵Σ⁺态的垂直跃迁能T_e, 平衡键长R_e, 离解能D_e, 谐振频率ω_e, 非谐性常数ω_ex_e及平衡位置的电偶极矩. X¹Σ⁺态的R_e 为2.034 Å, D_e 为5.728 eV, ω_e为571.73 cm^-1, ω_ex_e为1.6816 cm^-1, 平衡位置的电偶极矩为1.9593 Debye. 激发态1¹Σ, 1¹Δ, A¹Π, 1⁵Σ⁺的T_e 依次为25904.81, 26209.22, 32601.19, 43770.26 cm^-1; R_e依次为2.313, 2.322, 2.188, 2.8790 Å; D_e依次为2.524, 2.487, 1.694, 0.3036 eV, ω_e依次为358.90, 353.08, 376.32, 134.96 cm^-1; ω_ex_e依次为1.2421, 1.2151, 1.6608, 1.9095 cm^-1; 平衡位置的电偶极矩依次为1.3178, 1.4719, 1.5917, -1.9785 Debye. 通过求解核运动的薛定谔方程得到了J=0时X¹Σ⁺, 1¹Σ^-, 1¹Δ, A¹Π和1⁵Σ⁺态前30个振动态的振动能级G_v和分子常数B_v, 得到的结果和已有的实验值及其他理论值符合较好.     

Mass and lattice effects in trapping: Ar, Kr, and Xe on Pt(1 1 1), Pd(1 1 1), and Ni(1 1 1)

The trapping probabilities of argon, krypton, and xenon on Pd(1 1 1) and Ni(1 1 1) have been investigated using supersonic molecular beam techniques. The trapping probability of argon exhibits normal incident energy in a similar fashion on both Pd(1 1 1) and Pt(1 1 1) because the mass of argon is significantly less than the surface mass of either Pd or Pt. In contrast, dynamic corrugation in the gas-surface potential is observed for krypton trapping on Pt(1 1 1) and Pd(1 1 1), resulting in a decreased angular dependence of the trapping probability compared to argon. For xenon trapping on Pd significant lattice deformation during the gas-surface collision appears to give rise to total energy scaling. The trapping probability of xenon on Pd(1 1 1) remains high at unusually high incident kinetic energies due to the overall enhanced energy transfer from the incident atom to the lattice. Trapping probabilities of Ar, Kr, and Xe are significantly lower on Ni(1 1 1) than on either Pt(1 1 1) or Pd(1 1 1) despite the lower surface mass of the Ni atoms. This result is attributed to the lower binding energy of the rare gases on Ni(1 1 1) and the higher Debye temperature of Ni. The energy scaling of Ar trapping on Ni(1 1 1) is determined by static corrugation, but the energy scaling for Kr and Xe on Ni(1 1 1) may involve the effects of dynamic corrugation. In the latter cases, the greater stiffness of the nickel lattice decreases the dynamic corrugation relative to Pt(1 1 1) and Pd(1 1 1).     

Some interruption criteria for short high-frequency vacuum arcs

If the contacts of a vacuum interrupter open shortly before a current zero, the transient recovery voltage (TRV) can cause a reignition and reestablish the arc. When the current in a diffuse vacuum arc passes through zero, there is a distinct pause before the TRV builds up (approximately 40 ns for copper). During this pause the gap carries conduction current only with an ion component which depends on dI /dt, varying between 3 A for dI/dt=60 A/μs and 60 A for dI/dt=1235 A/μs. The ion current subsequently decays in tens or hundreds of nanoseconds. It can be distinguished from the displacement current at this time by varying dV/dt, keeping the other parameters constant. Among the interruption criteria for short high-frequency vacuum arcs, dI /dt prior to current zero and initial dV/dt are the most important. High values of dI/dt are more likely to precipitate reignitions, but breakdowns can occur after lower dI/dt's if the gap has been subjected to a high current for a relatively long time (>100 μs)     

Competition of modes resonant with arbitrary cyclotron harmonics ina gyrotron with nonfixed axial structure of the high-frequencyfield

A general theory is developed for self-consistent calculations of mode competition in a gyrotron with nonfixed axial structure of the RF field for arbitrary cyclotron harmonics. The theory is applied to the gyrotron operating at the Kernforschungszentrum Karlsruhe with a frequency of 150 GHz. The formalism presented allows a self-consistent calculation of mode competition for the operating and parasitic modes at the cyclotron resonance at arbitrary harmonics. Specific calculations are carried out for the cases n₀=1, n₁ =2 and n₀=2, n₁=1. It is emphasized that the formalism considered applies only to the case in which the azimuthal orthogonality condition is satisfied: n₀m₁≠n₁ m₀. There are circumstances when this condition is not satisfied     

Recombination lasing in heliumlike silicon: a possible path to thewater window

A major goal of current X-ray laser research is the achievement of gain in the 23.3-43.7 Å wavelength region, known as the `water window'. Silicon is the lowest atomic number element for which all the heliumlike 3-2 transitions lie in this region. The authors examine the fundamental kinetics of recombination lasing in this species, and conclude that the Si XIII 1s3d¹D ₂-1s2p¹P₁ line at 39.1 Å is an attractive candidate for recombination-pumped lasing. Attainment of gain in this line is somewhat more energetically favorable than for the hydrogenic Al XIII 3-2 transitions, but radiative trapping may be somewhat more troublesome than for H-like Al     

Adsorption and reactivity of SO2 on Ir(1 1 1) and Rh(1 1 1)

The adsorption and reactivity of SO₂ on the Ir(1 1 1) and Rh(1 1 1) surfaces were studied by surface science techniques. X-ray photoelectron spectroscopy measurements showed that SO₂ was molecularly adsorbed on both the Ir(1 1 1) surface and the Rh(1 1 1) surface at 200 K. Adsorbed SO₂ on the Ir(1 1 1) surface disproportionated to atomic sulfur and SO₃ at 300 K, whereas adsorbed SO₂ on the Rh(1 1 1) surface dissociated to atomic sulfur and oxygen above 250 K. Only atomic sulfur was present on both surfaces above 500 K, but the formation process and structure of the adsorbed atomic sulfur on Ir(1 1 1) were different from those on Rh(1 1 1). On Ir(1 1 1), atomic sulfur reacted with surface oxygen and was completely removed from the surface, whereas on Rh(1 1 1), sulfur did not react with oxygen.     

蒜氨酸和甲基蒜氨酸的红外及拉曼光谱研究

利用傅里叶红外光谱和共聚焦显微拉曼光谱技术,比较分析了大蒜主要功能活性成分前体蒜氨酸和甲基蒜氨酸粉末纯品的红外和拉曼谱。在3 200～2 800 cm-1和1 700～200 cm-1波段检测到显著的红外和拉曼吸收峰,其中蒜氨酸在3 080,1 617,1 582,1 496,1 418,1 342,1 301,919 cm-1处有8个较强的红外吸收峰,以及在3 088,1 636,1 404,1 290,1 051,790,745,693,588 cm-1处有9个较强的拉曼振动峰,可作为蒜氨酸的特征峰;甲基蒜氨酸在1 644,1 481,1 395,1 370,1 233,1 068,1 004,892 cm-1处有8个较强的红外吸收峰,以及在1 644,1 310,1 073,1 011,998,893,846,702,676 cm-1处有9个较强的拉曼振动峰,可作为甲基蒜氨酸的特征峰。蒜氨酸和同系物甲基蒜氨酸的红外及拉曼光谱具有明显差异,红外及拉曼光谱技术为蒜氨酸及其同系物的快速、 简便的分析提供了方法。     

A slow wave free-electron laser in a longitudinal wiggler field

Linearized Vlasov-Maxwell equations are solved to obtain the growth rate of free electron laser instability from a tenuous relativistic electron beam propagating in a partially dielectric loaded waveguide immersed in combined axial and longitudinal wiggler magnetic fields. The instability appears via cyclotron resonance interactions for wave perturbations very close to w-kV_z-w_c=nk ₀V_Z where n is the general harmonic number. For n=0, the gain is similar to a slow wave cyclotron amplifier. For n⩾1, the growth rate is substantially larger than the standard slow wave free electron laser scheme utilizing a transverse wiggler field     

超快光电测量技术

本文综述了近年来趔快光电测量技术的新进展,其中包括扭快光电材料的特性、高速光电器件的基本原理,着重介绍了若干主要的用快光电测量技术．     

Low field T1ρ imaging of myositis

The purpose of this study was to evaluate 1/T₁ρ in relation to 1/T₁ and 1/T₂ in characterizing normal and diseased muscle. We measured the muscle relaxation rates 1/T₁ and 1/T₂ at 0.1 T and 1/T₁ρ at on-resonance locking fields B₁ between 10 and 160 μT in myositis patients and normal volunteers. 1/T₂ and 1/T₁ρ of muscle were lower in the patients than in the volunteers, whereas there was no difference in the 1/T₁ values. The lower relaxation rates 1/T₂ and 1/T₁ρ in the diseased muscle may be due to fat and connective tissue infiltrations and edema. 1/T₁ρ contrast between muscle and subcutaneous fat was higher than 1/T₂ and 1/T₁ contrast. This may be explained by the different B₁ dispersion behavior of these two tissue types. 1/T₁ρ of fat is B₁ field independent, whereas 1/T₁ρ of muscle decreases clearly with increasing B₁ field. In conclusion, 1/T₁ρ provides a useful tool in manipulating contrast in magnetic resonance imaging of diseased muscle.     

CH4 dissociation on NiCo (1 1 1) surface: A first-principles study

A density-functional theory method has been conducted to investigate the adsorption of CH_x (x = 0-4) as well as the dissociation of CH_x (x = 1-4) on (1 1 1) facets of ordered NiCo alloy. The results have been compared with those obtained on pure Ni (1 1 1) surface. It shows that the adsorption energies of C and CH are decreased while it is increased for CH₃ on NiCo (1 1 1) compared to those on pure Ni (1 1 1). Furthermore, on NiCo (1 1 1), dissociation of CH_x prefers not to the top of Ni, but to the top of Co. The rate-determining step for CH₄ dissociation is considered as the first step of dehydrogenation on NiCo (1 1 1), while it is the fourth step of dehydrogenation on Ni (1 1 1). Furthermore, the activation barrier in rate-determining step is slightly higher by 0.07 eV on Ni (1 1 1) than that on NiCo (1 1 1). From above results, it is important to point out that carbon is easy to form on NiCo (1 1 1) although the adsorption energy of C atom is slightly decreased compared to that on Ni (1 1 1).     

胆囊癌的傅里叶变换红外光谱研究

运用衰减全反射(attenuated total reflection,ATR)探头与傅里叶变换红外(Fourier transform infra-red,FTIR)光谱仪,测定并分析了新鲜离体的胆囊癌组织18例和良性组织139例的FTIR光谱。结果表明:(1)胆囊癌的1 167和1 123 cm-1谱带的峰位显著地向低波数移动(P0.05),而1 309 cm-1谱带的峰位显著地向高波数移动(P0.05)。(2)胆囊癌组织光谱多个峰的相对强度I2 856/I1 461,I1 167/I1 461,I1 123/I1 461和I1 082/I1 461明显升高(P0.05)。(3)1 167和1 082 cm-1谱带的半高宽显著升高(P0.05),谱带1 461 cm-1的半高宽则显著降低(P0.05)。(4)癌组织1 750 cm-1谱带的出现几率明显增加(P0.05)。与胆囊良性组织相比较,癌组织光谱中与脂类、糖和核酸相关的谱带均发生了明显的变化。