Space-time characteristics of nuclear resonant excitation during Bragg reflection from multilayers

Mössbauer experiments using synchrotron radiation have opened up a new method for investigating nuclear-resonance scattering — in the time domain. It is shown that the field distribution in a multilayer structure, including periodic interlayers of a resonant isotope, under Bragg reflection conditions is substantially different in the energy and time differential regimes of investigation. For separate delay times the field does not decay into the medium, but rather it undergoes complicated dynamic beats. The positions of the antinodes of the “ energy” and “temporal” standing waves are also different. In consequence the energy (Mö ssbauer) and temporal spectra of nuclear resonant reflection contain substantially different information about the structure of the films.     

Diffuse x-ray scattering near Bragg peaks from point defects in a general lattice

Using the continuum theory of linear elasticity, diffuse x-ray scattering has been calculated in the immediate neighbourhood of Bragg peaks from point defects in a lattice containing more than one atom in the unit cell. General expressions are obtained for the Debye-Waller factor, Huang diffuse scattering and the asymmetric scattering due to the defect. For lattices with one atom per unit cell, these expressions reduce to the well-known formulae of diffuse scattering.     

Brillouin light scattering from spin waves in magnetic layers and multilayers

We give an overview on our experimental and theoretical investigations of Brillouin light scattering in magnetic thin films, layered magnetic structures and superlattices. For epitaxial Fe(1 10) layers on W(1 10) the in-plane and out-of-plane magnetic surface anisotropy constants are determined, and the influence of Pd overlayers on the surface anisotropies is studied. For Fe/Pd superlattices a magnetic polarization of the Pd at the interfaces is established and the interface anisotropy constant is determined. For second order Fe/Pd superlattices, formed by alternating two Fe/Pd bilayers with different repeat periods, the Brillouin spectrum is obtained and compared to calculations. In the case of magnetic/nonmagnetic multilayered structures we investigate theoretically the crossing regime between dipolar and exchange-dominated modes. For small spacer-layer thicknesses, interlayer exchange coupling shifts the spin-wave frequencies of all but the highest-frequency dipolar mode into the exchange-mode regime. In case of all-magnetic multilayered structures, such as Fe/Ni multilayers, a new type of propagating collective excitations arising from coupled exchange modes is predicted.     

Influence of organic capping layers on the performance of transparent organic light-emitting diodes

We investigate a set of transparent organic LEDs (TOLEDs) with different organic capping layer (OC) thicknesses to understand the capping layer effect. We find that thickness variation of the OC strongly influences the emission properties of TOLEDs and exhibits different trends for top or bottom emission. The external quantum efficiency for the top side can be enhanced by a factor of 63%, but that of the bottom side only by 4% compared to a reference device without an OC. Additionally, we demonstrate that the introduction of the OC is an effective method to control the bottom-to-top emission ratio within a measured range from 2.87 to 6.05.     

Study on the Gilbert damping of polycrystalline YIG films with different capping layers

This paper describes the effect of 5-nm thick platinum (Pt), aluminum (Al) and silicon oxide (SiO_x) capping layers on the static and dynamic magnetic properties of 400-nm thick polycrystalline YIG films deposited on a Pt buffer layer. Both static and dynamic magnetic properties of Pt capped YIG film are totally different among all YIG films. Namely, the squareness of the magnetization curve for Pt capped YIG film increases, indicating that Pt capped YIG film is magnetically softer than other YIG films. Interestingly, the effective Gilbert damping parameter of Pt capped YIG films is about four times as large as those of other YIG films, and its value is approximately 9.52 × 10⁻⁴. However, the value of Gilbert damping is 2.55 × 10⁻⁴, 3.46 × 10⁻⁴ and 3.85 × 10⁻⁴ respectively for no capping, SiOx capping and Al capping samples respectively. This huge change in Gilbert damping parameter is mainly originating from the spin pumping effect, which arises at the interface of a material having strong spin orbit interaction such as Pt. Moreover, the enourmous increase in the value of effective anisotropic field and decrese in effective saturation magnetization indicates interface anisotropy is induced in Pt capped sample. These results suggest that the static and dynamic magnetic properties of YIG film can be controlled by selecting an appropriate capping layer.     

The effect of reactor irradiation on the dielectric loss peaks of Nylon and Mylar

The effect of irradiation on the dielectric properties of nylon 66.6 and Mylar was studied. In the case of nylon the dielectric loss peak at 350 K measured with an annular frequency of 10⁴ l/s disappeared due to irradiation and the peak at higher temperaturcs shifted to still higher temperatures. In Mylar the α-peak grew in magnitude, indicating an increase in amorphousness, while the β-peak decreased. A rough estimate for the decrease in the magnitude of the effective number of dipoles is presented. The irradiation was carried out up to fast neutron fluence of 3 × 10¹⁷ nvt and gamma dose of 1 × 10⁹ rad.     

AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed.     

Electroluminescence from Si quantum dots/SiO2 multilayers with ultrathin oxide layers due to bipolar injection

Si quantum dots/SiO₂ multilayers with ultrathin oxide layers (2.4 nm) were fabricated on a p-type Si substrate in order to enhance the hole injection. Besides the luminescence band at 900 nm which was also shown in photoluminescence spectra, another strong luminescence band near the infrared region (1200 nm) can be observed in electroluminescence spectra. It can be assigned to the band-edge emission from the quasi 2-dimensional potential well in the Si substrate. Moreover, it is interesting to find the reduction of photoluminescence intensity under biased conditions which can be attributed to the occurrence of non-radiative Auger recombination process in charged Si quantum dots.     

The effect of spatial quantization of the electronic spectrum on the exchange interaction in multilayers

A strong influence of the quantization of the electronic spectrum of nonmagnetic spacers in multilayers is discovered on the dependence of the exchange interaction on the thickness of the spacer. It is shown that the antiferromagnetic dip is observed experimentally in Fe/Cr multilayers, as small thicknesses can be interpreted in terms of the simple RKKY approximation.     

Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method

We have investigated effects of growth temperature of thin GaAs capping layer in the initial stage of indium-flush process using atomic force microscopy and microscopic photoluminescence (μ-PL) methods. The shape of capped InAs quantum dot (QD) and its μ-PL properties are sensitive to the growth temperature of thin GaAs capping layer. In the case of the high temperature cap, the QD shape in initial capping stage is elongated along the [1 1 −0] direction, and μ-PL spectrum shows several peaks accompanied with indefinite peaks. On the other hand, the low temperature case, the QD shape is kept in isotropic and μ-PL spectrum shows distinctive emissions from excitonic states of the QD with suppressed indefinite peaks. These results indicate that the low temperature capping is effective to keep an isotropic shape of QD and suppress indefinite peaks.     

The effect of the modulation of Bragg scattering in small-slope approximation

Abstract

Small-slope approximation (SSA) belongs to a class of ‘unifying’ scattering theories which reproduce small perturbations and semiclassic (Kirchhoff) results within appropriate limits. However, the most stringent test for such theories involves a two-scale situation when a small-scale roughness is located on a tilted plane. A ‘unifying’ theory should properly account for the effects of modulation of the scattering cross section associated with a large-scale tilt. This paper shows that SSA does properly take into account these modulation effects.     

The effect of the modulation of Bragg scattering in small-slope approximation

Small-slope approximation (SSA) belongs to a class of 'unifying' scattering theories which reproduce small perturbations and semiclassic (Kirchhoff) results within appropriate limits. However, the most stringent test for such theories involves a two-scale situation when a small-scale roughness is located on a tilted plane. A 'unifying' theory should properly account for the effects of modulation of the scattering cross section associated with a large-scale tilt. This paper shows that SSA does properly take into account these modulation effects.     

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (_ρc)$\left({\rho }_c\right)$ to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of _ρc${\rho }_c$ was 1.99×10⁻⁴ Ω cm² at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.