Coverage effects on the adsorption of sulfur on Co(0 0 0 1): A DFT study

The adsorption of sulfur on Co(0 0 0 1) was studied using density functional theory calculations at coverage from 0.11 ML to 1.0 ML. Calculated results indicate that atomic S favors in hollow sites with bond S–Co dominated at lower coverage and at higher coverage the strong adsorbate S–S interaction leads to the formation of S₂ species. It was shown that the adsorption energy generally increases (gets weaker) with the coverage in a near linear fashion for the most stable configurations. In addition, modification of the surface electronic properties has been discussed and some discrepancy are found between our calculations and the findings of O adsorption on Au(1 1 1) and Pt(1 1 1) surfaces.     

Electronic charge transfer between Au nano-particles and TiO2-terminated SrTiO3(0 0 1) substrate

The interaction between Au nano-particles and oxide supports is recently discussed in terms of the catalytic activities. This paper reports the electronic charge transfer between Au nano-particles and TiO₂-terminated SrTiO₃(0 0 1) substrate, which is compared with that for stoichiometric(S)-, pseudo-stoichiometric(S¹)- and reduced(R)-TiO₂(1 1 0) supports. We observed the photoelectron spectra of Au 4f, O 2s, Ti 3p, and Sr 4p lines and also measured the work functions for Au/oxides supports using synchrotron-radiation light. As the results, all the O 2s, Ti 3p, and Sr 4p lines for Au/SrTiO₃(0 0 1) show lower binding energy shifts in a quite same manner and abrupt increase in the work function is seen in an initial stage. This clearly evidences an electronic charge transfer from the substrate to Au probably due to a much larger work function of Au than SrTiO₃(0 0 1), which leads to an upward band bending (0.3 eV) just like a Schottky contact. Electronic charge transfers also take place at Au/S- and Au/S¹-TiO₂(1 1 0) and Au/R-TiO₂(1 1 0) interfaces, where electrons are transferred from Au to S- and S¹-TiO₂ and from R-TiO₂ to Au, as predicted by ab initio calculations.     

Interaction of atomic H and CO with Cu(1 1 0) and bimetallic Ni/Cu(1 1 0)

Co-adsorption of hydrogen and CO on Cu(1 1 0) and on a bimetallic Ni/Cu(1 1 0) surface was studied by thermal desorption spectroscopy. Hydrogen was exposed in atomic form as generated in a hot tungsten tube. The Ni/Cu surface alloy was prepared by physical vapor deposition of nickel. It turned out that extended exposure of atomic hydrogen leads not only to adsorption at surface and sub-surface sites, but also to a roughening of the Cu(1 1 0) surface, which results in a decrease of the desorption temperature for surface hydrogen. Exposure of a CO saturated Cu(1 1 0) surface to atomic H leads to a removal of the more strongly bonded on-top CO (α₁ peak) only, whereas the more weakly adsorbed CO molecules in the pseudo threefold hollow sites (α₂ peak) are hardly influenced. No reaction between CO and H could be observed. The modification of the Cu(1 1 0) surface with Ni has a strong influence on CO adsorption, leading to three new, distinct desorption peaks, but has little influence on hydrogen desorption. Co-adsorption of H and CO on the Ni/Cu(1 1 0) bimetallic surface leads to desorption of CO and H₂ in the same temperature regime, but again no reaction between the two species is observed.     

Density functional calculations for Ni adsorption on Al(1 1 0)

The adsorption of 0.25, 0.5 and 1 monolayer (ML) of the transition metal Ni on the metal substrate Al(1 1 0) was studied using first-principles calculations at the level of density functional theory. The metal–metal system was analyzed with the generalized gradient approximation. Four stable atomic configurations were considered, and the optimized geometries and adsorption energies of different Ni adsorption sites on the Al(1 1 0) surface at selected levels of coverage were calculated and compared. The four-fold hollow site was determined to be the most stable adsorption site with adsorption energy of 5.101 eV at 0.25 ML, 3.874 eV at 0.5 ML and 3.665 eV at 1 ML. The adsorption energies of the four sites slightly decreased as the Ni coverage increased. Work function analysis showed that when Ni is adsorbed on the Al(1 1 0) surface, the work function decreased as the coverage increased due to depolarization. The Mulliken population and density of states were calculated to determine the charge distribution of the adsorption site, confirming that a chemisorption interaction exists between the adsorbed Ni atom and Al(1 1 0) surface atoms.     

A competition between (0 0 1) and (0 1 1) alignments in yttria stabilized zirconia thin films fabricated by ion beam assisted deposition

Biaxially textured yttria stabilized zirconia (YSZ) thin films, were deposited on glass substrates by ion beam assisted deposition method with different deposition time. As contrasts, films were also fabricated without assisting ion beam. The orientation properties of the films were characterized by X-ray diffraction. A comparative study shows that there is a competition between (0 0 1) and (0 1 1) alignments during the growth process. Assisting ions make the films (0 0 1)-advantaged and biaxially textured. The competitive growth and the orientation development are explained by selective resputtering and anisotropic damage on growing films induced by assisting ions.     

Effect of substrate temperature on few-layer graphene grown on Al2O3 (0 0 0 1) via direct carbon atoms deposition

Few-layer graphene (FLG) was grown on Al₂O₃ (0 0 0 1) substrates at different temperatures via direct carbon atoms deposition by using solid source molecular beam epitaxy (SSMBE) method. The structural properties were characterized by reflection high energy electron diffraction (RHEED), Raman spectroscopy and near-edge X-ray absorption fine-structure (NEXAFS). The results showed that the FLG started to form at the substrate temperature of 700 °C. When the substrate temperature increased to 1300 °C, the quality of the FLG was the best and the layer number was estimated to be less than 5. At higher substrate temperature (1400 °C or above), the crystalline quality of the FLG would be deteriorated. Our experiment results demonstrated that the substrate temperature played an important role on the FLG layer formation on Al₂O₃ (0 0 0 1) substrates and the related growth mechanism was briefly discussed.     

Surface alloy formation,short-range order,and deuterium adsorption properties of monolayer PdRu/Ru(0 0 0 1) surface alloys

The formation and structure of monolayer PdRu/Ru(0 0 0 1) surface alloys and their adsorption properties with respect to deuterium adsorption were investigated by atomic resolution scanning tunneling microscopy and by temperature programmed desorption. Surface alloys, prepared by deposition of up to one monolayer of Pd and flash annealing to 1150 K show (i) negligible loss of Pd by desorption or diffusion into the Ru bulk during this procedure and (ii) dominant phase separation into 2D Pd and Ru islands, in contrast to the random distribution in PtRu/Ru(0 0 0 1) surface alloys [H.E. Hoster, A. Bergbreiter, P.M. Erne, T. Hager, H. Rauscher, R.J. Behm, Phys. Chem. Chem. Phys. 10 (2008) 3812]. 2D short-range order parameters and the abundance of specific adsorption ensembles were evaluated for different Pd contents, effective pair interaction (EPI) energies were derived from Monte Carlo simulations. Deuterium adsorption on Pd monolayer films shows a pronounced weakening of adsorption bond, which is attributed to compressive strain and metal–metal interactions between Pd and underlying Ru atoms (‘vertical ligand effect’). Mixed adsorption ensembles containing both Pd and Ru atoms give rise to D₂ desorption in the intermediate temperature regime. The impact of the specific lateral distribution of the two metal species on the chemical surface properties is illustrated by comparison with deuterium adsorption on dispersed PtRu/Ru(0 0 0 1) surface alloys [T. Diemant, H. Rauscher, R.J. Behm, J. Phys. Chem. C 112 (2008) 8381].     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Entropy-driven adsorption of carbon nanotubes on (0 0 1) and (1 1 1) surfaces of CeO2 islands grown on sapphire substrate

According to the aim to compose combinatorial material by adsorption of carbon nanotubes onto the structured CeO₂ surface the interaction of the armchair (5,5) and zigzag (8,0) nanotubes with the (0 0 1) and (1 1 1) surfaces of CeO₂ islands have been investigated by theoretical methods. The thermodynamics of the adsorption were studied at the low surface coverage region. The interaction energy between the nanotube and the different CeO₂ surfaces shows significant increase when the size of the interface reaches 7–8 unit cells of CeO₂ and it remains unchanged in the larger interface region. However, the entropy term of the adsorption is significantly high when the distances of CeO₂ islands are equal to 27 nm (adsorption of armchair (5,5) nanotube) or 32 nm (adsorption of zigzag (8,0) nanotube). This property supports adsorption of nanotubes onto CeO₂ surfaces which possesses a very specific surface morphology. A long-wave vibration of nanotubes was identified as background of this unexpected phenomenon. This observation could be applicable in the development of such procedures where the nanotube adsorption parallel to the surface is aimed to perform.     

Metallization of Ge(0 0 1)-p(2 × 1) surface as result of thermal fluctuations

We present a theoretical study of the metallization of Ge(0 0 1)-p(2 × 1) surface which is observed in experimental data. We have considered the connection between thermal fluctuation of this surface structure and its metallic properties. To this end we have performed long-time MD-DFT simulations. The obtained results show that thermal fluctuation of the Ge(0 0 1)-p(2 × 1) structure may cause its metallization which in not necessary connected with a flip-flop motion of dimer atoms. It was shown that the metallization of the Ge(0 0 1)-p(2 × 1) surface takes place when the dimer buckling angle is reduced to around 11°. In the case of our simulations the considered surface system remained in the metallic state for 25% of the simulation time. We have also found that the metallic state of the fluctuating Ge(0 0 1)-p(2 × 1) surface is built up by dangling bonds of the dimer atoms shifted up (D_up) and down (D_down).     

Interaction of NO with the O-rich RuO2(1 1 0) surface at 300 K

The interaction of NO with the O-rich RuO₂(1 1 0) surface, exposing coordinatively unsaturated O-bridge, O-cus, and Ru-cus atoms, was studied at 300 K by thermal desorption spectroscopy (TDS) and high-resolution electron energy-loss spectroscopy (HREELS). The conclusions are validated by isotope substitution experiments with ¹⁸O. During exposure to NO an O···N–O surface group (NO₂-cus) is formed with O-cus. Additionally, a smaller number of empty Ru-cus sites are filled by NO-cus. If one warms the sample to 400 K, NO₂-cus does not desorb but decomposes into O and NO again, the latter being either released into gas phase or adsorbed as NO-cus. With O-bridge such a surface group is not stable at 300 K. Our experiments further prove that O-cus is more reactive than O-bridge.     

A high (0 0 1)-oriented CoPt/Ag film deposited on glass substrate

The magnetic properties and structures of CoPt_15 nm/Ag_0−100 nm films deposited by DC magnetron sputtering on glass substrates have been studied. The (0 0 1) texturing was improved by introducing an Ag underlayer. As the Ag underlayer thickness was 100 nm, a nearly perfect (0 0 1)-textured CoPt film was obtained.     

Surface vibrational thermodynamics from ab initio calculations for fcc(1 0 0)

We present vibrational dynamics and thermodynamics for the (1 0 0) surfaces of Cu, Ag, Pd, Pt and Au using a real space approach. The force field for these systems is described by density functional theory. The changes in the vibrational dynamics and thermodynamics from those in bulk are confined mostly to the first-layer. A substantial enhancement of the low-frequency end of the acoustic branch was found and is related to a loosening of the bond at the surface. The thermodynamics of the first-layer also show significant differences (higher heat capacity, lower free energy and higher mean vibrational square amplitudes) from what obtains in bulk. Comparing these results with those calculated using embedded-atom method potentials, we discovered that for Ag(1 0 0) and Cu(1 0 0), the two methods yield very similar results while for Pd(1 0 0), Pt(1 0 0) and Au(1 0 0) there are substantial differences.     

Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface

We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface. It has been found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface is about 1.7 ML. Upon saturated adsorption of atomic hydrogen, the √3×√3 surface structure changes to the 1×1 structure. The data of the CAICISS measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the √3×√3 surface move from T₄ to on-top sites.     

In situ magneto-optical Kerr effect study of uncovered Fe films on ZnSe(0 0 1)

The magnetic properties of uncovered Fe/ZnSe/GaAs(1 0 0) ultrathin films have been determined in situ by magneto-optical Kerr effect (MOKE). Fe films up to 10 monolayers (ML) thick were deposited on c(2×2) Zn-rich ZnSe/GaAs(0 0 1) surfaces at 180 °C. We have studied the thickness dependence of the in-plane lattice parameter of the Fe films and of the MOKE hysteresis loops in the longitudinal geometry, at 150 K, under magnetic fields up to 0.1 T applied along the [1 1 0] and [1-1 0] directions of the ZnSe(0 0 1). Reflection high energy electron diffraction show that in the low thickness regime the Fe films present an in-plane structural anisotropy characterized by an expansion along the [1 1 0] direction. Hysteretic loops were obtained only starting from ∼5 ML Fe. We found the onset of an uniaxial magnetic anisotropy with [1 1 0] magnetic easy axis at 7 ML Fe.     

Optical investigation of InAs/InP(1 0 0) quantum dots grown by gas source molecular beam epitaxy

We report on the optical characteristics of InAs quantum dots based on the InP(1 0 0) substrate grown by gas source molecular beam epitaxy without assisting any other methods. The photoluminescence was carefully investigated by adjusting the thickness of InAs layers and the growth temperature. A wide range of emitting peaks is obtained with the increase in the thickness of InAs layers. In addition, we find that the morphology and shape of quantum dots also greatly depend on InAs layers. The images of atomic force microscopy show that the quantum dots like forming into quantum dashes elongated along the [0 1 ?1] direction when the thickness of InAs layers increased. A critical thickness of formation quantum dots or quantum dash is obtained. At the same time, we observe that the growth temperature also has a great impact on the emission wavelength peaks. High qualities of InAs/InP(1 0 0) quantum dots providing their emission wavelength in 1.55 μm are obtained, and good performances of quantum dots lasers are fabricated.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

Room-temperature deposition of group III metals on Si(1 0 0): A comparative study of nucleation behavior

In this paper, we compare and contrast the processes of nucleation and subsequent growth of single-atom wide metal chains formed when group III metals (Al, Ga, In) are deposited onto Si(1 0 0) at room-temperature (RT). Employing Density Functional Theory (DFT) calculations, diffusion pathways on Si(1 0 0) surface are identified and their associated activation barriers are calculated. Then, the relative stabilities of various C-defect-pinned chains are examined by comparing the relevant adsorption energies. We also account for the observation that defect-nucleated chains grow on only one side of a C-defect by showing that the latter’s presence breaks the symmetry between the two previously equivalent binding sites on either side and rendering one much more stable than the other. Next, a growth model tailored for each group III metal/Si(1 0 0) system and incorporating the above results was simulated using Kinetic Monte Carlo (KMC) techniques to show that the surface morphologies generated by this model accurately reflect the observed ratio of homogeneously to heterogeneously nucleated chains. Finally, we examine through KMC simulations the consequences of the contrasting roles of a defect on In/Si(1 0 0) and Al/Si(1 0 0) – it captures adatoms in the former while it merely blocks direct adatom diffusion in the latter – on key quantities such as the mean island density.     

Adsorption of Xe atoms on the TiO2(1 1 0) surface: A density functional study

The interaction of xenon atoms with the TiO₂(1 1 0) surface of rutile has been studied by density functional theory methods. Five different possible adsorption sites on the relaxed and clean TiO₂(1 1 0) surface and on two different type of oxygen vacancies possible on this oxide substrate have been considered. In the case of the defect-free substrate, and when compared with a previous study concerning the adsorption of Ar atoms also on TiO₂(1 1 0), the xenon atom, as a larger and easier polarizable species, is shown to have a deeper physisorption well, as expected. Likewise, Xe atoms prefer to be bounded to positions nearby the outermost titanium atoms as found previously for Ar. This is in agreement with most studies concerning rare gases adsorbed on transition metal surfaces. In the case of the reduced surfaces, it is found that the interaction is more favourable in the protruding rows. The interaction is dominated by dispersion forces and DFT + dispersion energies are 3.5–5 times larger than the non-corrected DFT values and Xe-surface distances are smaller. Finally, an interesting correlation is obtained for the calculated interaction energies and the Xe–Ti distance.     

Identification of iron oxide phases in thin films grown on Al2O3(0 0 0 1) by Raman spectroscopy and X-ray diffraction

We report on the identification of Fe₃O₄ (magnetite) and α-Fe₂O₃ (hematite) in iron oxide thin films grown on α-Al₂O₃(0 0 0 1) by evaporation of Fe in an O₂-atmosphere with a thickness of a few unit cells. The phases were observed by Raman spectroscopy and confirmed by X-ray diffraction (XRD). Magnetite appeared independently from the substrate temperature and could not be completely removed by post-annealing in an oxygen atmosphere as observed by X-ray diffraction. In the temperature range between 400 °C and 500 °C the X-ray diffraction shows that predominantly hematite is formed, the Raman spectrum shows a mixture of magnetite and hematite. At both lower and higher substrate temperatures (300 °C and 600 °C) only magnetite was observed. After post-annealing in an O₂-atmosphere of 5 × 10^?5 mbar only hematite was detectable in the Raman spectrum.