Optical characterization of methanol adsorption on the bare and oxygen precovered Cu(1 1 0) surface

We have studied the adsorption and reaction of methanol on the bare and oxygen precovered Cu(1 1 0) surface at 200 K using reflectance difference spectroscopy (RDS). On the bare and fully oxygen covered surface, the sticking coefficient is close to zero. In contrast, on the partially oxygen covered surface, a sticking coefficient close to unity is obtained. This observation suggests a high mobility of methanol on both bare and oxygen covered Cu(1 1 0) and of methoxy on Cu(1 1 0). Two reaction regimes, an oxygen supply limited and an adsorption site limited regime are identified. The transition between these two regimes occurs for an oxygen coverage of about 0.2.     

Oxygen adsorption and surface segregation in (2 1 1) surfaces of Pt(shell)/M(core) and Pt3M (M = Co,Ir) alloys

Density functional theory is used to study oxygen adsorption and its effect on surface segregation in (2 1 1) surfaces of Pt(shell)/M(core) and Pt₃M (M = Co, Ir) alloys. It is found that the most energetically favorable oxygen adsorption site is the bridge site over and parallel to the (1 0 0) step. Surface segregation phenomena is observed in Pt₃Co, Pt₃Ir and Pt/Co(core) systems. The Pt/Ir(core) structure was the only one, among the studied systems, that showed antisegregation behavior even in presence of oxygen adsorbed.     

Structural and dynamical properties of Ru(0 0 0 1) surface

I performed density functional theory (DFT) calculations combined with MD simulations to study the structural relaxation of Ru(0001) surface. The surface relaxation of the topmost layer is found to be about ?4% at absolute zero temperature. Using MD simulations in the temperatures range of 50 K and 900 K, the effect is found to be minor on the surface relaxation as compared to Pd (1 1 1) clean surface. The effect of surface vibration is also investigated using a LEED code and shows no effect of the vibrational level on the IV curves, which rules out any disagreement between proper theory and LEED results of well prepared surfaces.     

XPS and SRUPS study of oxygen adsorption on Cd0.9Zn0.1Te (1 1 1)A surface

Synchrotron radiation ultraviolet photoemission spectroscopy (SRUPS) and X-ray photoelectron spectroscopy (XPS) have been applied to investigate oxygen adsorption on a cadmium zinc telluride (CZT) (1 1 1)A surface. The surface chemical composition and the surface oxidation process were monitored by recording the Te 3d, O 1s, Zn 2p, Cd 4d core level peaks, and the Cd MNN Auger peak. The CZT (1 1 1)A surface was effectively oxidized by dosing oxygen directly. The typical surface state of the clean CZT (1 1 1)A surface was identified. After oxygen exposure, this surface state disappeared and a signal due to the formation of O–CZT appeared. In addition, the work function of CZT decreased with the increasing oxygen exposure.     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Reactivity of the Cu2O(1 0 0) surface: Insights from first principles calculations

We present a summary of results of systematic first principles calculations of the electronic and geometric structures of the Cu₂O(1 0 0) surface and the process of CO oxidation on this surface (energetics and pathways of adsorption, diffusion and reactions of CO and O₂ on the surface). The (p, T) phase diagram of the Cu₂O(1 0 0) in equilibrium of with gas phase O₂ built using the ab initio thermodynamics approach suggests that the O-terminated surface is preferred over the Cu-terminated one within the entire ranges of pressures and temperatures in which the compound exists. Metastable Cu-terminated Cu₂O(1 0 0) is found to undergo a surface reconstruction in agreement with experiment. We find CO to oxidize spontaneously on the O-terminated Cu₂O(1 0 0) surface by consuming surface O atoms. Our calculations also show that the surface O-vacancies left in the course of the CO oxidation can be easily filled with dissociative adsorption of the gas phase O₂ molecules, which are usually present in reaction environment.     

Ionic and electronic conductivity of nitrogen-doped YSZ single crystals

The ionic and electronic charge transport was studied for single crystals of 9.5 mol% yttria-stabilized zirconia with additional nitrogen doping (YSZ:N) of up to 7.5 at.% (referred to the anion sublattice and formula unit Zr_0.83Y_0.17O_1.91) as a function of temperature and nitrogen content. The total conductivity being almost equivalent to the oxygen ion conductivity has been measured by AC impedance spectroscopy under vacuum conditions in order to prevent re-oxidation and loss of nitrogen. The electronic conductivity has been determined by Hebb–Wagner polarization using ion-blocking Pt microelectrodes in N₂ atmosphere. The ionic conductivity of YSZ:N decreases in the presence of nitrogen at intermediate temperatures up to 1000 °C. The mean activation energy of ionic conduction strongly increases with increasing nitrogen content, from 1.0 eV for nitrogen-free YSZ up to 1.9 eV for YSZ containing 7.3 at.% N. Compared to nitrogen-free YSZ, the electronic conductivity first decreases at nitrogen contents of 2.17 and 5.80 at.%, but then increases again for a sample with 7.53 at.%. At temperatures of 850 °C and above, the presence of the N^3? dopant fixes the electrode potential and thus the oxygen partial pressure at the Pt electrode to very low values. This corresponds to a pinning of the Fermi level at a relatively high energy in the upper half of the band gap. At 7.53 at.% N and 950 °C, the oxygen partial pressure in YSZ:N corresponds to p_O2 = 3 × 10^? 18 bar. At temperatures above 850 °C, even in the presence of a very small oxygen concentration in the surrounding gas phase, the nitrogen ion dopant becomes highly mobile and thus diffuses to the surface where it is oxidized to gaseous N₂. The results are discussed in terms of the ionic and electronic defect structures and the defect mobilities in YSZ:N.     

Transitional metal-doped 8 mol% yttria-stabilized zirconia electrolytes

The sintering, grain growth and ionic conductivities (especially the grain-boundary (GB) conductivity), of 8YSZ electrolytes with various silica levels (~ 30 ppm, ~ 500 ppm and ~ 3000 ppm), doped with 1 at% transitional metal oxides (TMOs), have been systematically investigated by means of dilatometer, electron microscopy and impedance analyzer. It is confirmed that small additions of TMOs (i.e., Fe, Mn, Co or Ni) promote the densification and grain growth of both the pure and Si-containing 8YSZ. The effect of TMOs on the ionic conductivities could be negative or positive, relying on the type of TMOs, sintered density and impurity level. For the dense and pure 8YSZ (with ~ 30 ppm SiO₂), the addition of 1 at% TMOs led to a reduction in grain interior (GI) conductivity by ~ 25–33% with little effect on the GB conduction. For the impure 8YSZ (with ~ 500 ppm or 3000 ppm SiO₂), except for FeO_1.5, the other TMOs (i.e., Mn, Co or Ni) are extremely detrimental to the total conductivity by significantly reducing the GB conduction. Moreover, it is also found that the GB conductivity of the impure 8YSZ doped with Co or Ni is less sensitive to sintering temperature. FeO_1.5 showed a scavenging effect on SiO₂ in the impure 8YSZ, which is specially beneficial to the total conductivity of samples with higher silica levels and/or sintered at relatively low temperatures.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

Atomistic simulations for the non-equilibrium surface premelting and melting of Nb(1 1 0) plane

In the present paper molecular dynamics (MD) simulations have been preformed to investigate the surface melting process and microscopic mechanism of Nb(1 1 0) plane in the atomic scale with a modified analytic embedded atom method (MAEAM). On the basis of the MD relaxation dependence of averaged internal energy and layer structure factor at given temperatures, the melting point of the sample has been estimated to be 2510 K. Then by the above results the Nb(1 1 0) plane melting process has been approximately divided into two stages: first the layer-by-layer premelting phase in the surface region and then a simultaneous abrupt melting transition for the inner layers. According to the variation of the averaged internal energy of the inner atomic layer, the melting latent heat has been calculated and the result is in good agreement with the experimental value. The simulated snapshots of atomic configuration for Nb(1 1 0) plane have indicated that the dynamically microscopic mechanism of melting nucleation during the melting transition.     

Acetaldehyde photochemistry on TiO2(1 1 0)

The ultraviolet (UV) photon induced decomposition of acetaldehyde adsorbed on the oxidized rutile TiO₂(1 1 0) surface was studied with photon stimulated desorption (PSD) and thermal programmed desorption (TPD). Acetaldehyde desorbs molecularly from TiO₂(1 1 0) with minor decomposition channels yielding butene on the reduced TiO₂ surface and acetate on the oxidized TiO₂ surface. Acetaldehyde adsorbed on oxidized TiO₂(1 1 0) undergoes a facile thermal reaction to form a photoactive acetaldehyde–oxygen complex. UV irradiation of the acetaldehyde–oxygen complex initiated photofragmentation of the complex resulting in the ejection of methyl radical into gas phase and conversion of the surface bound fragment to formate.     

An investigation of the effect of pre-dosed O atoms on the adsorption of NO on Pt{2 1 1}

Reflection absorption infrared spectroscopy (RAIRS) and temperature programmed desorption (TPD) have been used to investigate the effect of pre-dosed O atoms on the adsorption of NO on Pt{2 1 1} at room temperature. RAIRS experiments show that no new species are formed when NO is adsorbed onto a Pt{2 1 1} surface that has been pre-dosed with oxygen and no species are lost from the spectra, compared to spectra recorded for NO adsorption on the clean Pt{2 1 1} surface. However pre-dosed oxygen atoms do influence the frequency and intensity of several of the observed infrared bands. In stark contrast, pre-dosed O has a large effect on the TPD spectra. In particular N₂ and N₂O desorption, seen following NO adsorption on the clean Pt{2 1 1} surface, is completely inhibited. This effect has been assigned to the blocking of NO dissociation by the pre-adsorbed O atoms. A new NO desorption peak, not seen for NO adsorption on the clean Pt{2 1 1} surface, is also observed in TPD spectra recorded following NO adsorption on an oxygen pre-dosed Pt{2 1 1} surface.     

Metallization of Ge(0 0 1)-p(2 × 1) surface as result of thermal fluctuations

We present a theoretical study of the metallization of Ge(0 0 1)-p(2 × 1) surface which is observed in experimental data. We have considered the connection between thermal fluctuation of this surface structure and its metallic properties. To this end we have performed long-time MD-DFT simulations. The obtained results show that thermal fluctuation of the Ge(0 0 1)-p(2 × 1) structure may cause its metallization which in not necessary connected with a flip-flop motion of dimer atoms. It was shown that the metallization of the Ge(0 0 1)-p(2 × 1) surface takes place when the dimer buckling angle is reduced to around 11°. In the case of our simulations the considered surface system remained in the metallic state for 25% of the simulation time. We have also found that the metallic state of the fluctuating Ge(0 0 1)-p(2 × 1) surface is built up by dangling bonds of the dimer atoms shifted up (D_up) and down (D_down).     

First-principles study of small palladium clusters on NiAl(1 1 0) alloy surface

Theoretical calculations focused on the geometry, stability, electronic and magnetic properties of small palladium clusters Pd_n (n=1–5) adsorbed on the NiAl(1 1 0) alloy surface were carried out within the framework of density functional theory (DFT). In agreement with the experimental observations, both Ni-bridge and Al-bridge sites are preferential for the adsorption of single palladium atom, with an adsorption energy difference of 0.04 eV. Among the possible structures considered for Pd_n (n=1–5) clusters adsorbed on NiAl(1 1 0) surface, Pd atoms tend to form one-dimensional (1D) chain structure at low coverage (from Pd₁ to Pd₃) and two-dimensional (2D) structures are more stable than three-dimensional (3D) structures for Pd₄ and Pd₅. Furthermore, metal-substrate bonding prevails over metal–metal bonding for Pd cluster adsorbed on NiAl(1 1 0) surface. The density of states for Pd atoms of Pd/NiAl(1 1 0) system are strongly affected by their chemical environment. The magnetic feature emerged upon the adsorption of Pd clusters on NiAl(1 1 0) surface was due to the charge transfer between Pd atoms and the substrate. These findings may shade light on the understanding of the growth of Pd metal clusters on alloy surface and the construction of nanoscale devices.     

Oxygen adatoms at SrTiO3(0 0 1): A density-functional theory study

We present a density-functional theory study addressing the energetics and electronic structure properties of isolated oxygen adatoms at the SrTiO₃(0 0 1) surface. Together with a surface lattice oxygen atom, the adsorbate is found to form a peroxide-type molecular species. This gives rise to a non-trivial topology of the potential energy surface for lateral adatom motion, with the most stable adsorption site not corresponding to the one expected from a continuation of the perovskite lattice. With computed modest diffusion barriers below 1 eV, it is rather the overall too weak binding at both regular SrTiO₃(0 0 1) terminations that could be a critical factor for oxide film growth applications.     

Oxygen permeation characteristics of zirconia with surface modification

Yttria-stabilized zirconia (YSZ) can be used as an oxygen-permeating membrane at elevated temperature (> 1400 °C) due to its chemical and mechanical stability. It was previously shown that the oxygen transport through YSZ membrane in reducing oxygen partial pressure (P_O2) was highly influenced by the surface-exchange kinetics that can be improved by porous surface coating layers such as YSZ, GDC (Gd-doped ceria) or YSZ–GDC mixture [H.J. Park, G.M. Choi, J. Eur. Ceram. Soc. 25 (2005) 2577]. However, the increased oxygen flux was still lower than that estimated assuming bulk-diffusion limit and rapidly decreased with time due to the sintering of coating layers and the reaction between bulk YSZ and coating layers. In this study, the oxygen fluxes through YSZ with LaCrO₃, GDC + LaCrO₃ (bilayer), LaCrO₃ + 5 wt.% GDC (mixture), or LaCr_0.7Co_0.3O₃ coatings were measured under controlled P_O2 gradient (permeate-side P_O2: ∼ 3 × 10^− 12 atm, feed-side P_O2: 2 × 10^− 10–2 × 10^− 8 atm) at 1600 °C. The oxygen flux drastically increased with these coatings. The highest increase in oxygen flux was shown with GDC + LaCrO₃ (bilayer) coating and was maintained for a long time. The presence of highly catalytic Ce ions while maintaining porous structure in the coating layer may explain the observation. The prevention of formation of resistive layer due to ceria coating may also be partly responsible for the observation.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

Interaction of NO with the O-rich RuO2(1 1 0) surface at 300 K

The interaction of NO with the O-rich RuO₂(1 1 0) surface, exposing coordinatively unsaturated O-bridge, O-cus, and Ru-cus atoms, was studied at 300 K by thermal desorption spectroscopy (TDS) and high-resolution electron energy-loss spectroscopy (HREELS). The conclusions are validated by isotope substitution experiments with ¹⁸O. During exposure to NO an O···N–O surface group (NO₂-cus) is formed with O-cus. Additionally, a smaller number of empty Ru-cus sites are filled by NO-cus. If one warms the sample to 400 K, NO₂-cus does not desorb but decomposes into O and NO again, the latter being either released into gas phase or adsorbed as NO-cus. With O-bridge such a surface group is not stable at 300 K. Our experiments further prove that O-cus is more reactive than O-bridge.     

Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface

We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface. It has been found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface is about 1.7 ML. Upon saturated adsorption of atomic hydrogen, the √3×√3 surface structure changes to the 1×1 structure. The data of the CAICISS measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the √3×√3 surface move from T₄ to on-top sites.